Abstract: A semiconductor device including an embedded channel structure, a sidewall channel structure and a gate electrode structure is provided. The embedded channel structure is disposed on a substrate. The sidewall channel structure is disposed on the substrate, and located at a lateral side of the embedded channel structure. The gate electrode structure is disposed on the substrate, encircles the embedded channel structure and is located between the embedded channel structure and the sidewall channel structure.

Abstract: A nitride semiconductor light-emitting element includes an active layer comprising at least one well layer, a p-type semiconductor layer located on one side of the active layer, and an electron blocking stack body located between the active layer and the p-type semiconductor layer. The electron blocking stack body includes a first electron blocking layer and a second electron blocking layer that is located on the p-type semiconductor layer side relative to the first electron blocking layer and has a lower Al composition ratio than that of the first electron blocking layer. When a total number of the well layers in the active layer is N, a film thickness of the first electron blocking layer is a film thickness d [nm] and an Al composition ratio of the second electron blocking layer is an Al composition ratio x [%], relationships 0.1N+0.9?d?0.2N+2.0 and 10N+40?x?10N+60 are satisfied.

Abstract: A semiconductor device comprising a first nanosheet located on top of a substrate, wherein the first nanosheet is tapered the Y-direction to have a width W1 and the first nanosheet is tapered in the X-direction to have a length L1. A second nanosheet located on top of the first nanosheet, wherein the second nanosheets is tapered in the Y-direction to have a width W2 and the first nanosheet is tapered in the X-direction to have a length L2. Wherein the widths W1 and W2 are different from each other and the lengths L1 and L2 are different from each other and wherein the substrate includes a tapered surface in the Y-direction.

Abstract: A nanorod light emitting device, a method of manufacturing the same, and a display apparatus including the nanorod light emitting device are provided. The nanorod light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type, wherein a distance between a lower surface of the first semiconductor layer and an upper surface of the second semiconductor layer is in a range of about 2 ?m to about 10 ?m, wherein a difference between a diameter of the upper surface of the second semiconductor layer and the lower surface of the first semiconductor layer is 10% or less of a diameter of the upper surface of the second semiconductor layer.

Abstract: A method for manufacturing a semiconductor device includes a process of providing two source electrodes on a substrate, a process of providing a gate electrode on one surface of the substrate between the two source electrodes, a process of providing an insulating film on the gate electrode, the substrate, and side surfaces of the two source electrodes, a process of providing an airbridge foundation resist on the insulating film, providing an airbridge on the two source electrodes and the airbridge foundation resist, and a process of removing the airbridge foundation resist, in which surfaces of the two source electrodes at sides opposite to the substrate and a front surface of the airbridge foundation resist provided in the subsequent process are substantially coplanar.

Abstract: A display substrate and a display panel are provided. The display substrate includes a base substrate; a display region, on the base substrate and including a plurality of sub-pixels arranged in an array; each of the plurality of sub-pixels includes a light-emitting element and a pixel circuit that drives the light-emitting element to emit light, and the pixel circuit includes a driving sub-circuit, a data writing sub-circuit, a threshold compensation sub-circuit, and a reset sub-circuit; the reset sub-circuit includes a first reset transistor and a second reset transistor, the threshold compensation sub-circuit includes a threshold compensation transistor and a storage capacitor, an orthographic projection of the second reset transistor on the base substrate is between an orthographic projection of the first reset transistor on the base substrate and an orthographic projection of the threshold compensation transistor on the base substrate.

Abstract: Process for manufacturing a 3C—SiC layer, comprising the steps of: providing a wafer of 4H—SiC, provided with a surface; heating, through a LASER beam, a selective portion of the wafer at least up to a melting temperature of the material of the selective portion; allowing the cooling and crystallization of the melted selective portion, thus forming the 3C—SiC layer, a Silicon layer on the 3C—SiC layer and a carbon-rich layer above the Silicon layer; completely removing the carbon-rich layer and the Silicon layer, exposing the 3C—SiC layer. If the Silicon layer is maintained on the 4H—SiC wafer, the process leads to the formation of a Silicon layer on the 4H—SiC wafer. The 3C—SiC or Silicon layer thus formed may be used for the integration, even only partial, of electrical or electronic components.

Abstract: A light emitting element includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; an active layer between the first semiconductor layer and the second semiconductor layer in a first direction; a first outer film around an outer surface of at least the active layer and extending in the first direction; and a second outer film around an outer surface of a portion of the first semiconductor layer on which the first outer film is not present.

Abstract: A selector with a superlattice-like structure and a preparation method thereof are provided, which belong to the technical field of micro-nano electronics. The selector includes a substrate, and a first metal electrode layer, a superlattice-like layer, and a second metal electrode layer sequentially stacked on the substrate. The superlattice-like layer includes n+1 first sublayers and n second sublayers alternately stacked periodically. A material of the first sublayer is amorphous carbon, and a material of the second sublayer is a chalcogenide with gating property.

Abstract: A light-emitting structure includes an n-type layer, an active layer, and a p-type layer. The active layer has N quantum well structure periods, each of the N quantum-well structure periods has a well layer and at least one barrier layer. The N quantum-well structure periods include a first light-emitting section and a second light-emitting section. The first light-emitting section is closer to the n-type layer than the second light-emitting section. A method for producing the light-emitting structure, and a light-emitting device that has the light-emitting structure are also disclosed.

Abstract: The present disclosure provides a transparent display panel and method for manufacturing the same and a display device. The transparent display panel includes pixel units arranged in an array, and the pixel unit includes a light-emitting area and a transparent area. The pixel unit includes a pixel defining layer disposed in the light-emitting area and defining a plurality of opening areas. A light-emitting device is disposed in the opening area. The pixel unit further includes a transparent film layer disposed in the transparent area and being of a hydrophobic material. The transparent film layer includes a groove and an inclined channel, and the channel connects the groove with any one of the opening areas. A bottom surface of the groove is higher than a bottom surface of the opening area, and an area of the groove is greater than that of the opening area connected with the channel.

Abstract: A display apparatus realizing a narrow viewing angle is provided. The display apparatus may include a light-emitting device on an emission region of a device substrate. A touch structure and a lens may be disposed on an encapsulating element covering the light-emitting device. The lens may be disposed on the emission region. A color filter may be disposed on the touch structure and the lens. Thus, in the display apparatus, Moire phenomenon may be prevented or at least reduced.

Abstract: A semiconductor device includes a substrate including a main chip region and a scribe lane region, wherein first trenches are formed in the scribe lane region. A well region doped with impurities is provided on an upper part of the main chip region of the substrate. Align key patterns formed on surfaces of the first trenches and on surfaces of the substrate adjacent to the first trenches in the scribe lane region and having an alternately and repeatedly stacked structure of a silicon germanium pattern and a silicon pattern, are provided. A multi-bridge channel transistor is formed on the main chip region of the substrate.

Abstract: Embodiments of present invention provide a semiconductor device. The semiconductor device includes a silicon (Si) substrate containing a set of short channel field-effect-transistors (FETs); a germanium (Ge) layer on top of the Si substrate containing a set of long channel p-type FETs (PFETs); and an oxide semiconductor layer on top of the Ge layer containing a set of long channel n-type FETs (NFETs), wherein the set of short channel FETs, long channel PFETs, and long channel NFETs are interconnected through a set of far-back-end-of-line (FBEOL) layers.

Abstract: The disclosed subject matter relates generally to structures, memory devices and a method of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices having a spacer element on a side of the electrode. The present disclosure provides a memory device including a first electrode having a side, the side has upper and lower portions, a spacer element on the lower portion of the side of the first electrode, a resistive layer on the upper portion of the side of the first electrode, and a second electrode laterally adjacent to the side of the first electrode. The second electrode has a top surface, in which the top surface has a concave profile.

Abstract: A light emitting device includes a substrate, a laminated structure which is provided to the substrate, and includes a light emitting layer, a first electrode which has contact with the laminated structure at an opposite side of the laminated structure to the substrate, and is configured to inject an electrical current into the light emitting layer, and a wiring layer which is electrically coupled to the first electrode, and has a light shielding property with respect to light generated in the light emitting layer, wherein the wiring layer is provided with a first opening part which the light emitted from the laminated structure passes through, and the first opening part is located inside an outer edge of the first electrode in a plan view.

Abstract: Interfacial delamination processes for physically separating a film structure from a substrate, and processes of fabricating a thin-film electronic device. The processes entail providing the substrate with an electrically-conductive separation layer on a surface of the substrate and optionally providing a pin hole free barrier layer on the electrically-conductive separation layer, forming a film structure on the electrically-conductive separation layer or, if present, the barrier layer, to yield a multilayer structure, and separating the film structure from the substrate by subjecting the multilayer structure to interfacial debonding that comprises contacting at least an interface between the film structure and the electrically-conductive separation layer or, if present, the barrier layer, with water or an electrolyte solution.

Abstract: A semiconductor substrate comprising a first epitaxial silicon carbide layer and a second silicon carbide epitaxial layer. At least one semiconductor device is formed in or on the second silicon carbide epitaxial layer. The semiconductor substrate is formed overlying a silicon carbide substrate having a surface comprising silicon carbide and carbon. An exfoliation process is used to remove the semiconductor substrate from the silicon carbide substrate. The carbon on the surface of the silicon carbide substrate supports separation. A portion of the silicon carbide substrate on the semiconductor substrate is removed after the exfoliation process. The surface of the silicon carbide substrate is prepared for reuse in subsequent formation of semiconductor substrates.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical stack of charge storage elements, a vertical semiconductor channel, a ferroelectric material layer located between the vertical stack of charge storage elements and the vertical semiconductor channel, and a blocking dielectric layer located between the ferroelectric material layer and the vertical semiconductor channel. A tunneling dielectric layer is located between at least one of the electrically conductive layers and the vertical stack of charge storage elements.

Abstract: Systems and methods for bit line modulation to compensate for cell source variation are disclosed. For example, a method for reading data from non-volatile storage comprising determining a first bit line level based on a first programmed data state that is being sensed and determining a second bit line level based on a second programmed data state that is being sensed. As another example, a storage device comprising a first bit line driver configured to generate a first bit line level for a first set of bit lines corresponding to a first set of memory strings based on a first cell source level associated with the first set of memory strings a second bit line driver configured to generate a second bit line level for a second set of bit lines corresponding to a second set of memory strings based on a second cell source level associated with the second set of memory strings.