Abstract: An optical element module comprising a plurality of module components is provided. The module components comprise an optical element, an optical element holder and a contact element. The optical element has a first coefficient of thermal expansion. The optical element holder holds the optical element via the first contact element and has a second coefficient of thermal expansion, the second coefficient of thermal expansion being different from the first coefficient of thermal expansion. At least one of the module components is adapted to provide at least a reduction of forces introduced into the optical element upon a thermally induced position change in the relative position between the optical element and the optical element holder, the position change resulting from a temperature situation variation in a temperature situation of the plurality of module components.

Abstract: In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.

Abstract: In an immersion lithography apparatus, ultrasonic waves are used to atomize liquid on a surface of the substrate.

Abstract: An exposure apparatus exposes a substrate by projecting an image of a pattern onto the substrate via a projection optical system and a liquid that fills a gap between the projection optical system and the substrate. The exposure apparatus has a liquid recovery mechanism with a drive section powered by electric power supplied from a commercial power source and an uninterruptible power source separate from the commercial power source. When the commercial power source has a failure, the supply of electric power to the drive section is switched to the uninterruptible power source.

Abstract: Exposure for performing patterning in which micropatterns differing in pitch exist in close vicinity to one another is handled, and micropatterns are formed with high accuracy with sufficient manufacture process margins without using a photomask complicated in manufacturing process at high manufacture cost like an alternating phase shift mask. A light intensity distribution of irradiation light constituted of double pole illuminations is formed to correspond to L&S patterns. The double pole illumination is constituted of a pair of illumination modes, and the double pole illumination is constituted of a pair of illumination modes.

Abstract: An exposure apparatus exposes a substrate by projecting an image of a pattern onto the substrate via a projection optical system and a liquid that fills a gap between the projection optical system and the substrate. The exposure apparatus has a liquid recovery mechanism with a drive section powered by electric power supplied from a commercial power source and an uninterruptible power source separate from the commercial power source. When the commercial power source has a failure, the supply of electric power to the drive section is switched to the uninterruptible power source.

Abstract: A system is used to perform fast and slow applications, for example fast application can be pulse trimming. The system includes a radiation source, an electro-optical modulator, and a beam splitter. The radiation source is configured to generate a polarized beam of radiation. The electro-optical modulator, formed of crystalline quartz, is configured to modulate the beam of radiation. The beam splitter is configured to direct a first portion of the beam to a beam dump and to form an output beam from a second portion of the beam.

Abstract: An apparatus that includes an exposure system for exposing a substrate to an energy pattern, a vacuum chamber having an outside wall including first and second units which can be separated from each other, and a first anti-vibration mount being supported by the first unit, and for supporting a first constituent element of the exposure system. The first anti-vibration mount is disposed outside the vacuum chamber. The apparatus further includes a second anti-vibration mount, being supported by the second unit, for supporting a second constituent element of the exposure system.

Abstract: A device includes a rotary base; an approach stage; a substrate holding table and a nozzle head. The substrate holding table holds the work by suction, and comes into intimate contact with the approach stage and the rotary base through first and second annular seal members to form a liquid storage space, respectively. When the suction holding and the intimate contact are released, the substrate becomes rotatable together with the rotary base and the approach stage.

Abstract: Apparatus for processing substrates according to a predetermined photolithography process includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station.

Abstract: In immersion exposure, a resist pattern forming method suppressing resist pattern defects comprises mounting a substrate formed a resist film thereon and a reticle formed a pattern thereon onto an exposure apparatus, supplying a first chemical solution onto the resist film to selectively form a first liquid film in a local area on the resist film and draining the solution, the first liquid film having a flow and being formed between the resist film and a projection optical system, transferring the pattern of the reticle to the resist film through the first liquid film to form a latent image, supplying a second chemical solution onto the resist film to clean the resist film, heating the resist film, and developing the resist film to form a resist pattern from the resist film.

Abstract: A liquid jet and recovery system for an immersion lithography apparatus has arrays of nozzles arranged to have their openings located proximal to an exposure region through which an image pattern is projected onto a workpiece such as a wafer. These nozzles are each adapted to serve selectively either as a source nozzle for supplying a fluid into the exposure region or as a recovery nozzle for recovering the fluid from the exposure region. A fluid controlling device functions to cause nozzles on selected one or more sides of the exposure region to serve as source nozzles and to cause nozzles on selected one or more of the remaining sides to serve as recovery nozzles such that a desired flow pattern can be established for the convenience of immersion lithography.

Abstract: A supporting apparatus supports a movable element by a bearing. The apparatus has a moment reducing unit that exerts a force on a portion of the movable element, which is different from a portion supported by the bearing. The moment reducing unit reduces a moment that acts on the movable element when the portion of the movable element, which is supported by the bearing, changes as the movable element moves. This stabilizes the attitude of the movable element.

Abstract: An immersion lithographic projection apparatus has a liquid confinement structure configured to at least partly confine liquid to a space between a projection system and a substrate, the confinement structure having a buffer surface, when in use, positioned in close proximity to a plane substantially comprising the upper surface of the substrate and of a substrate table holding the substrate, to define a passage having a flow resistance. A recess is provided in the buffer surface, the recess, when in use, being normally full of immersion liquid to enable rapid filling of a gap between the substrate and substrate table as the gap moves under the buffer surface. The recess may be annular or radial and a plurality of recesses may be provided.

Abstract: Methods of manufacturing an integrated circuit by a lithographic apparatus are disclosed. The methods include patterning a radiation beam with a patterning device, projecting the patterned beam onto a substrate using a projection system, and determining the position of the patterning device. In one example, the patterning device's position relative to the projection system is determined by measuring the position of the patterning device's support structure. In another example, the position can be determined by measuring a position of the patterning device relative to its support and by measuring a position of the support. In another example, a Z-position of the patterning device is determined by directing at least one beam of radiation onto a part of the patterning device located outside a pattern area. This can be done by directing a pair of laser beams from sensors on the projection system to reflecting strips on the patterning device.

Abstract: A control system is provided for controlling a support structure in a lithographic apparatus. The control system includes a first measurement system arranged to measure the position of a substrate supported by the support structure, the position being measured in a first coordinate system. The control system further includes a second measurement system for measuring the position of the support structure in a second coordinate system, the first measurement system having a presumed position in the second coordinate system.

Abstract: A lithography apparatus includes a resist processing apparatus to perform a process of applying a resist on a substrate, a process of heating a resist film on the substrate, and a process of developing the resist film on the substrate, an immersion exposure apparatus including a projection optical system which projects an image of a pattern on a photomask onto the resist film and configured to perform exposure through liquid located on an optical path between the projection optical system and resist film, a transporting apparatus connected to the resist processing and immersion exposure apparatuses to perform transportation of the substrate between the resist processing and immersion exposure apparatuses, and a temperature/humidity control apparatus configured to control at least one of temperature and humidity in at least one of the resist processing and transporting apparatuses based on temperature and humidity or the in humidity the immersion exposure apparatus.

Abstract: A lithographic apparatus includes an illumination system constructed and arranged to condition a radiation beam, and a support constructed and arranged to support a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The apparatus also includes a substrate table constructed and arranged to hold a substrate, and a projection system constructed and arranged to project the patterned radiation beam onto a target portion of the substrate. The substrate table includes a chuck having a plurality of protrusions constructed and arranged to support corresponding parts of a bottom surface of a wafer. The top surface of at least one of the protrusions includes a plurality of elements that define a reduced contact area between the substrate and the top surface of the protrusion.

Abstract: The present disclosure provides a lithography apparatus. The apparatus includes an exposure module designed for exposure processing; a baking module embedded in the exposure module and designed for post exposure baking (PEB); and a control module designed to control the exposure module and the baking module.

Abstract: A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.