Liquid jet and recovery system for immersion lithography

- Nikon

A liquid jet and recovery system for an immersion lithography apparatus has arrays of nozzles arranged to have their openings located proximal to an exposure region through which an image pattern is projected onto a workpiece such as a wafer. These nozzles are each adapted to serve selectively either as a source nozzle for supplying a fluid into the exposure region or as a recovery nozzle for recovering the fluid from the exposure region. A fluid controlling device functions to cause nozzles on selected one or more sides of the exposure region to serve as source nozzles and to cause nozzles on selected one or more of the remaining sides to serve as recovery nozzles such that a desired flow pattern can be established for the convenience of immersion lithography.

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Description
CROSS-REFERENCE TO RELATED APPLICATIONS

This is a Divisional of U.S. patent application Ser. No. 11/236,759 filed Sep. 28, 2005 (now U.S. Pat. No. 7,443,482), which is a Continuation of International Application No. PCT/US2004/010071 filed Apr. 1, 2004, which claims the benefit of U.S. Provisional Patent Application No. 60/462,786 filed Apr. 11, 2003. The entire disclosures of each of the prior applications are hereby incorporated by reference in their entireties.

BACKGROUND

This invention relates to a liquid jet and recovery system for an immersion lithography apparatus, adapted to supply a liquid into the space between a workpiece such as a wafer and the last-stage optical element such as a lens of an optical system for projecting the image of a reticle onto the workpiece.

Such an immersion lithography system has been disclosed, for example, in W099/49504, which is herein incorporated by reference for describing the general background of the technology and some general considerations. One of the issues with existing immersion lithography mechanisms is the supplying and recovery of the immersion liquid. An improved system for supplying and recovering a liquid for immersion lithography is needed.

SUMMARY

Various liquid jet and recovery systems embodying this invention for an immersion lithography apparatus will be described below for having an image pattern projected onto a workpiece such as a wafer. The image pattern is typically provided by a reticle placed on a reticle stage and projected by an optical system including an illuminator and a last-stage optical element that is disposed opposite the workpiece with a gap in between that element and the workpiece. The last-stage optical element may or may not be a lens and is hereinafter sometimes simply referred to as “the optical element.” The aforementioned gap is hereinafter referred to as “the exposure region” because the image pattern is projected onto the workpiece through this gap.

The purpose of a liquid jet and recovery system is to supply a fluid such as water into this exposure region, to entrain it there at least during the projection of the image pattern on the workpiece and to remove (or to recover) it away from the exposure region. In order to carry out the supply and recovery of the fluid quickly and smoothly without generating air bubbles, arrays of nozzles are arranged to have their openings located proximal to the exposure region. According to one aspect of the invention, these nozzles are each adapted to serve selectively either as a source nozzle for supplying a fluid into the exposure region or as a recovery nozzle for recovering the fluid from the exposure region. A fluid controlling device is further provided, the functions of which include causing nozzles of selected one or more of these arrays on one or more of the sides of the exposure region to serve as source nozzles and causing a fluid to be supplied through them into the exposure region such that the supplied fluid contacts both the workpiece and the optical element for immersion lithography.

The fluid controlling device also may be adapted to simultaneously cause nozzles of selected one or more of the remaining arrays to serve as recovery nozzles. Since each of the nozzles can serve selectively either as a supply nozzle or a recovery nozzle, various flow patterns can be realized by this fluid controlling device. For example, the fluid may be supplied into the exposure region through the nozzles of the array on a specified side and removed through those on the array on the opposite side, the nozzles of the arrays on the remaining sides neither supplying nor recovering the fluid. As another example, the fluid may be supplied into the exposure region through the nozzles of mutually oppositely facing arrays and recovered through those of the arrays on the transversely facing arrays. As a third example, a flow in a diagonal direction may be realized if the fluid is supplied from the nozzles of two arrays on mutually adjacent and mutually perpendicular sides of the exposure region and recovered through those of the remaining arrays on the oppositely facing sides. Alternatively, the fluid may be supplied through all of the nozzles surrounding substantially all around the exposure region to have the fluid entrained inside the exposure region.

According to another aspect of the invention, arrays of nozzles exclusively adapted to supply a fluid, herein referred to as fluid-supply nozzles, and arrays of nozzles exclusively adapted to recover the fluid, herein referred to as fluid-recovery nozzles, are separately provided, the fluid-supply nozzles surrounding the exposure region and the fluid-recovery nozzles surrounding the fluid-supply nozzles from all sides. According to a preferred embodiment, a groove is formed substantially all around the exposure region and the fluid-recovery nozzles are arranged to open into this groove such that a uniform flow can be more easily established. In this case too, the fluid controlling device can establish the variety of flow patterns as explained above.

As explained above, the optical element that is disposed opposite the workpiece and that comes into direct contact with the fluid such as water need not be a lens. According to a preferred embodiment of the invention, this last-stage optical element comprises a pair of optical plates contacting each other across a contact plane and having channels formed on this contact plane, these channels connecting to the exposure region such that the fluid can be passed through these channels into or out of the exposure region. This embodiment is preferred because the fluid used for immersion lithography tends to affect the material of the optical element adversely, and lenses are more expensive and troublesome to replace than optical plates.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described in conjunction with the following drawings of exemplary embodiments in which like references numerals designate like elements, and in which:

FIG. 1 is a schematic cross-sectional view of an immersion lithography apparatus that incorporates the invention;

FIG. 2 is a process flow diagram illustrating an exemplary process by which semiconductor devices are fabricated using the apparatus shown in FIG. 1 according to the invention;

FIG. 3 is a flowchart of the wafer processing step shown in FIG. 2 in the case of fabricating semiconductor devices according to the invention;

FIG. 4 is a schematic plan view of a liquid jet and recovery system embodying this invention that may be incorporated in the lithography apparatus of FIG. 1;

FIG. 5 is a schematic side view of the liquid jet and recovery system of FIG. 4;

FIGS. 6-9 are schematic plan views of the liquid jet and recovery system of FIGS. 4 and 5 to show various flow patterns that may be established;

FIG. 10 is a schematic plan view of another liquid jet and recovery system embodying this invention;

FIG. 11 is a schematic plan view of still another liquid jet and recovery system embodying this invention;

FIG. 12 is a schematic side view of the liquid jet and recovery system of FIG. 11;

FIG. 13 is a schematic side view of still another liquid jet and recovery system embodying this invention; and

FIG. 14 is a schematic plan view of the liquid jet and recovery system of FIG. 13.

 DETAILED DESCRIPTION OF EMBODIMENTS

FIG. 1 shows an immersion lithography apparatus 100 that may incorporate a liquid jet and recovery system embodying this invention, however, this exemplary example of an immersion lithography apparatus itself is not intended to limit the scope of the invention.

As shown in FIG. 1, the immersion lithography apparatus 100 comprises an illuminator optical unit 1 including a light source such as a KrF excimer laser unit, an optical integrator (or homogenizer) and a lens and serving to emit pulsed ultraviolet light IL with wavelength 248 nm to be made incident to a pattern on a reticle R. The pattern on the reticle R is projected onto a wafer W coated with a photoresist at a specified magnification (such as 1/4 or 1/5) through a telecentric light projection unit PL. The pulsed light IL may alternatively be ArF excimer laser light with wavelength 193 nm, F2 laser light with wavelength 157 nm or the i-line of a mercury lamp with wavelength 365 nm. In what follows, the coordinate system with X-, Y- and Z-axes as shown in FIG. 1 is referenced to explain the directions in describing the structure and functions of the lithography apparatus 100. For the convenience of disclosure and description, the light projection unit PL is illustrated in FIG. 1 only by way of its last-stage optical element (such as a lens) 4 disposed opposite to the wafer W and a cylindrical housing 3 containing all the others of its components.

The reticle R is supported on a reticle stage RST incorporating a mechanism for moving the reticle R in the X-direction, the Y-direction and the rotary direction around the Z-axis. The two-dimensional position and orientation of the reticle R on the reticle stage RST are detected by a laser interferometer (not shown) in real time and the positioning of the reticle R is effected by a main control unit 14 on the basis of the detection thus made.

The wafer W is held by a wafer holder (not shown) on a Z-stage 9 for controlling the focusing position (along the Z-axis) and the tilting angle of the wafer W. The Z-stage 9 is affixed to an XY-stage 10 adapted to move in the XY-plane substantially parallel to the image-forming surface of the light projection unit PL. The XY-stage 10 is set on a base 11. Thus, the Z-stage 9 serves to match the wafer surface with the image surface of the light projection unit PL by adjusting the focusing position (along the Z-axis) and the tilting angle of the wafer W by the auto-focusing and auto-leveling method, and the XY-stage 10 serves to adjust the position of the wafer W in the X-direction and the Y-direction.

The two-dimensional position and orientation of the Z-stage 9 (and hence also of the wafer W) are monitored in real time by another laser interferometer 13 with reference to a mobile mirror 12 affixed to the Z-stage 9. Control data based on the results of this monitoring are transmitted from the main control unit 14 to a stage-driving unit 15 adapted to control the motions of the Z-stage 9 and the XY-stage 10 according to the received control data. At the time of an exposure, the projection light is made to sequentially move from one to another of different exposure positions on the wafer W according to the pattern on the reticle R in a step-and-repeat routine or a step-and-scan routine.

The lithography apparatus 100 being described with reference to FIG. 1 is an immersion lithography apparatus and is hence adapted to have a liquid 7 of a specified kind such as water filling the space between the surface of the wafer W and the lower surface of the last-stage optical element 4 of the light projection unit PL at least while the pattern image of the reticle R is being copied onto the wafer W.

The last-stage optical element 4 of the light projection unit PL is detachably affixed to the cylindrical housing 3. The liquid 7 is supplied from a liquid supply unit 5 that may comprise a tank, a pressure pump and a temperature regulator (not individually shown) to the space above the wafer W under a temperature-regulated condition and is collected by a liquid recovery unit 6. The temperature of the liquid 7 is regulated to be approximately the same as the temperature inside the chamber in which the lithography apparatus 100 itself is disposed. Source nozzles 21 through which the liquid 7 is supplied from the supply unit 5 and recovery nozzles 23 through which the liquid 7 is collected into the recovery unit 6 are only schematically shown. Their arrangements will be described more in detail below because they are parts of a liquid jet and recovery system to which this invention relates.

According to this invention, multiple jets are provided to inject an immersion fluid (referenced above as the liquid 7) between the wafer W to be exposed and the last-stage optical element 4 of the light projection unit PL for projecting an image pattern thereon. FIGS. 4 and 5 show schematically the design of a liquid jet and recovery system 200 embodying this invention which may be incorporated in the lithography apparatus 100 described above, FIG. 5 being its horizontal side view and FIG. 4 being its plan view. The design is characterized as having a large plural number of nozzles 210 arranged in a quasi-continuous manner in arrays on all sides of the exposure area by the light projection unit PL. According to the embodiment illustrated in FIG. 4, the nozzles 210 are arranged in four arrays 211, 212, 213 and 214, each of the arrays being on one side of a rectangular formation.

Although FIG. 1 showed the source nozzles 21 connected to the liquid supply unit 5 and the recovery nozzles 23 connected to the liquid recovery unit 6 separately, it was for the convenience of illustration. The nozzles 210 shown in FIGS. 4 and 5 instead are each adapted to function both as a source nozzle and as a recovery nozzle, or explained more precisely, to be controlled so as to function selectively either as a source nozzle or as a recovery nozzle under the control of the main control unit 14.

FIGS. 6-9 show different ways in which the liquid jet and recovery system 200 of FIGS. 4 and 5 may be operated. FIG. 6 shows an example in which the wafer scan direction is as shown by an arrow and the nozzles 210 in one of the arrays (i.e., array 213) are controlled so as to function as source nozzles while those in the opposite array 211 are controlled so as to function as recovery nozzles, those in the remaining two arrays 212 and 214 being controlled to function neither as source nozzles nor as recovery nozzles. As a result, the flow pattern of the liquid 7 will be as shown by parallel arrows.

FIG. 7 shows another example in which the nozzles 210 in mutually opposite arrays (i.e., arrays 211 and 213) are controlled so as to function as source nozzles while those in the remaining arrays 212 and 214 are controlled so as to function as recovery nozzles. The resultant flow pattern of the liquid 7 will be as shown by arcuate arrows. In other words, the wafer W may be moved in two scanning directions while the liquid 7 is directed in two orthogonal directions.

FIG. 8 shows still another example in which all nozzles 210 in all of the arrays are controlled so as to function as source nozzles, serving to entrain the liquid 7 in the region below the projection lens of the light projection unit PL between its last-stage optical element 4 and the wafer W, the flow pattern being shown by radially outwardly pointing arrows.

FIG. 9 shows still another example in which the nozzles 210 in two mutually adjacent arrays (i.e., arrays 211 and 212) are controlled so as to function as source nozzles and those in the remaining arrays 213 and 214 are controlled so as to function as recovery nozzles. The resultant flow pattern of the liquid 7 is shown by diagonal arrows.

In summary, in each of these examples, the nozzles 210 are individually controlled, or the jets are connected to valves that can be selectively set on and off as source or recovery. They may be arranged such that a single valve may control several jets together. The jets may be individual parts or integrated together as a single unit. The valve shown in FIG. 5, therefore, may be regarded as being connected to only one nozzle or to a group of nozzles. Alternatively, the nozzles may be controlled as groups. For example, group 211 may be controlled by a single valve or groups 211 and 213 may be controlled by a single valve.

FIG. 10 shows another liquid jet and recovery system 220 with an alternative arrangement characterized as providing source nozzles 225 and recovery nozzles 230 independently. In other words, unlike the system 200 shown in FIGS. 4-9 with nozzles each functioning selectively either as a source nozzle or as a recovery nozzle, the system 220 shown in FIG. 10 is provided with the source nozzles 225 which are not adapted to function as a recovery nozzle and the recovery nozzles 230 which are not adapted to function as a source nozzle.

According to the example shown in FIG. 10, the source nozzles 225 and the recovery nozzles 230 are separately arranged in arrays around the exposure area, the arrays of the source nozzles 225 being each arranged inside the corresponding one of the arrays of the recovery nozzles 230. Each nozzle may be configured with a valve to turn the nozzle on or off. Alternatively, a single valve may control several jets together. Any of the flow patterns described above with reference to FIGS. 6-9 can be established with the system 220 shown in FIG. 10.

FIGS. 11 and 12 show still another liquid jet and recovery system 240 that is similar to the system 220 described above with reference to FIG. 10 but is different in that a liquid recovery zone 250 is provided substantially all around the exposure area. The liquid recovery zone 250 may comprise a channel cut into a supporting port or a loop made of a suitable material. Individually controllable recovery nozzles 230 are located in the interior of the recovery zone 250. The zone 250 thus provided is advantageous in that the liquid 7 can be pumped out more uniformly. The source nozzles 225 may be independently controlled or used in groups, as in the embodiments explained above, to establish any of the flow patterns shown in FIGS. 6-9.

In the description given above, the last-stage optical element 4 may or may not be a lens. The lower surface of this optical element 4, adapted to come into direct contact with the liquid 7, tends to become soiled as particles removed from the photoresist and the impurities contained in the liquid 7 become attached to it. For this reason, the last-stage optical element 4 may be required to be exchanged from time to time, but if the element that must be replaced by a new element is a lens, the maintenance cost (or the so-called “running cost”) becomes inconveniently high and it takes a longer time for the exchange.

In view of this problem, the light projection unit PL of the immersion lithography apparatus 100 may be designed such that its last-stage optical element 4 is not a lens. FIGS. 13 and 14 show an example embodying this invention characterized as having a pair of mutually intimately contacting optical plates (upper plate 41 and lower plate 42) disposed below the lens 40 that would be the last-stage optical element 4 of the light projection unit PL but for these plates 41 and 42.

The embodiment of the invention shown in FIGS. 13 and 14 is further characterized as integrating the liquid injection nozzle arrays with the last-stage optical element of the light projection unit PL. As shown in FIGS. 13 and 14, the lower plate 42 may be provided with grooves on the upper surface so as to form liquid-passing channels 46 as the two plates 41 and 42 are attached to each other. The channels 46 each open at the lower surface, and the upper plate 41 is provided with throughholes 47 each attached to a hose 48 by way of an adaptor 49 such that the liquid 7 may be injected into and recovered from the space between the wafer W and the lower plate 42 through the channels 46, the throughholes 47 and the hoses 48.

The optical plates 41 and 42 may be of a known kind having parallel surfaces serving to correct the optical characteristics of the light projection unit PL such as its spherical aberration and coma. This embodiment is advantageous because the plates 41 and 42 are less expensive to replace than a lens. Substances such as organic silicon compounds may become attached to the surface of the optical plates 41 and 42 so as to adversely affect the optical characteristics of the light projection unit PL such as its light transmissivity and brightness as well as the uniformity of brightness on the wafer W but the user has only to replace the relatively inexpensive optical plates and the running cost would be significantly less than if the last-stage optical element 4 were a lens. The plates 41 and 42 and the lens 40 alternatively may be cemented together by using optical cements suitable for the wavelengths being used.

The liquid jet and recovery system according to this embodiment is advantageous for many reasons. First, the nozzles can be set close to the exposure area. This helps to insure a continuous layer of bubble-free liquid in the exposure region. It also helps when the edge of the wafer is being exposed because the edge of the wafer is a discontinuity and may perturb the liquid layer, causing bubbles to enter the region being exposed. Second, the layer of liquid around the nozzles is roughly continuous and uniform, allowing for capillary action to help make certain that the liquid layer is uniform. Third, the lens may be of a material such as calcium fluoride that degrades and dissolves in water while the plates may be a material such as fused silica that is stable in contact with water. Fourth, the region between the channels is open for auxiliary optical beams. These beams may be used for through-the-lens focusing, or for other purposes.

Systems according to this invention are generally capable of providing a uniform, bubble-free layer of water between the optical element and the wafer. It may also improve the speed for filling the gap and removing the liquid in the outward areas of the lens or the stage areas surrounding the wafer. Furthermore, it will prevent degradation of the lens or the surface of the optics that may be affected by the contact with the immersion fluid.

FIG. 2 is referenced next to describe a process for fabricating a semiconductor device by using an immersion lithography apparatus incorporating a liquid jet and recovery system embodying this invention. In step 301 the device's function and performance characteristics are designed. Next, in step 302, a mask (reticle) having a pattern is designed according to the previous designing step, and in a parallel step 303, a wafer is made from a silicon material. The mask pattern designed in step 302 is exposed onto the wafer from step 303 in step 304 by a photolithography system such as the systems described above. In step 305 the semiconductor device is assembled (including the dicing process, bonding process and packaging process), then finally the device is inspected in step 306.

FIG. 3 illustrates a detailed flowchart example of the above-mentioned step 304 in the case of fabricating semiconductor devices. In step 311 (oxidation step), the wafer surface is oxidized. In step 312 (CVD step), an insulation film is formed on the wafer surface. In step 313 (electrode formation step), electrodes are formed on the wafer by vapor deposition. In step 314 (ion implantation step), ions are implanted in the wafer. The aforementioned steps 311-314 form the preprocessing steps for wafers during wafer processing, and selection is made at each step according to processing requirements.

At each stage of wafer processing, when the above-mentioned preprocessing steps have been completed, the following post-processing steps are implemented. During post-processing, initially, in step 315 (photoresist formation step), photoresist is applied to a wafer. Next, in step 316 (exposure step), the above-mentioned exposure device is used to transfer the circuit pattern of a mask (reticle) onto a wafer. Then, in step 317 (developing step), the exposed wafer is developed, and in step 318 (etching step), parts other than residual photoresist (exposed material surface) are removed by etching. In step 319 (photoresist removal step), unnecessary photoresist remaining after etching is removed. Multiple circuit patterns are formed by repetition of these preprocessing and post-processing steps.

While a lithography system of this invention has been described in terms of several preferred embodiments, there are alterations, permutations, and various equivalents which fall within the scope of this invention. It also should be noted that there are many alternative ways of implementing the methods and apparatus of the invention. It also goes without saying that the liquid need not be water but may be perfluoropolyether (PFPE) such as Fomblin oil used when the light source is F2 laser (157 nm).

Claims

1. A liquid jet and recovery system for an immersion lithography apparatus that projects an image pattern onto a workpiece through an optical element disposed opposite said workpiece, an exposure region being defined between said optical element and said workpiece, said liquid jet and recovery system comprising:

fluid-supply arrays of nozzles with openings that surround and are proximally located to said exposure region;
fluid-recovery arrays of nozzles, surrounding said fluid-supply arrays of nozzles; and
a fluid controlling device that causes a fluid to be supplied through selected one or more of said fluid-supply arrays of nozzles into said exposure region such that said fluid contacts both said workpiece and said optical element for immersion lithography and that causes recovery of said fluid from said exposure region through selected one or more of said fluid-recovery arrays of nozzles.

2. The system of claim 1, wherein said fluid-recovery arrays of nozzles open into a groove that opens to said exposure region.

3. The system of claim 1, wherein said optical element comprises a pair of optical plates contacting each other across a contact plane and having channels formed on said contact plane, said channels connecting to said exposure region, said fluid controlling device causing said fluid to pass through said channels.

4. A method of immersion lithography that projects an image pattern onto a workpiece through an optical element disposed opposite said workpiece, an exposure region being defined between said optical element and said workpiece, said method comprising the steps of:

disposing fluid-supply arrays of nozzles with openings so as to surround said exposure region from all sides and that are proximally located to said exposure region;
disposing fluid-recovery arrays of nozzles so as to surround said fluid-supply arrays of nozzles; and
supplying a fluid through selected one or more of said fluid-supply arrays of nozzles into said exposure region such that said fluid contacts both said workpiece and said optical element for immersion lithography and recovering said fluid from said exposure region through selected one or more of said fluid-recovery arrays of nozzles.

5. The method of claim 4, wherein said fluid-recovery arrays of nozzles open into a groove that opens to said exposure region.

6. An immersion lithography apparatus that projects an image pattern onto a workpiece, said immersion lithography apparatus comprising:

a reticle stage that retains a reticle;
a working stage that retains said workpiece;
a projection optical system including an illumination source and an optical element disposed opposite said workpiece for projecting said image pattern from said reticle onto said workpiece through said optical element, an exposure region being defined between said optical element and said workpiece;
fluid-supply arrays of nozzles with openings that surround and are proximally located to said exposure region;
fluid-recovery arrays of nozzles surrounding said fluid-supply arrays of nozzles; and
a fluid controlling device that causes a fluid to be supplied through selected one or more of said fluid-supply arrays of nozzles into said exposure region such that said fluid contacts both said workpiece and said optical element for immersion lithography and that causes recovery of said fluid from said exposure region through selected one or more of said fluid-recovery arrays of nozzles.

7. A device manufacturing method comprising:

exposing the workpiece with the image pattern through the projection optical system of the immersion lithography apparatus of claim 6 while the fluid is disposed between the optical element and the workpiece; and
processing the exposed workpiece.

8. A device manufacturing method comprising

exposing a wafer as the workpiece with the image pattern through the projection optical system of the immersion lithography apparatus of claim 6 while the fluid is disposed between the optical element and the wafer; and
processing the exposed wafer.

9. An apparatus comprising:

a stage that holds a workpiece;
a reticle stage that holds a reticle that defines an image;
a projection system including an optical element, the projection system projects the image defined by the reticle onto an exposure region on the workpiece, there being a gap between the optical element and the workpiece;
a set of source nozzles arranged adjacent to the gap, the set of source nozzles provide immersion fluid into the gap such that the immersion fluid contacts both the workpiece and the optical element; and
a set of recovery nozzles arranged adjacent to the gap, the set of recovery nozzles recover the immersion fluid exiting the gap,
wherein the recovery nozzles recover the immersion fluid from a recovery zone that surrounds the exposure region, and the source nozzles are located between the exposure region and the recovery zone so as to be closer to the exposure region than is the recovery zone.

10. The apparatus of claim 9, wherein the source nozzles are arranged on at least two sides of the exposure region.

11. The apparatus of claim 9, wherein the source nozzles are arranged on at least four sides of the exposure region.

12. The apparatus of claim 9, wherein the recovery nozzles are arranged on at least two sides of the exposure region.

13. The apparatus of claim 9, wherein the recovery nozzles are arranged on at least four sides of the exposure region.

14. The apparatus of claim 9, wherein the recovery nozzles are arranged in a first pattern around the exposure region.

15. The apparatus of claim 14, wherein the source nozzles are arranged in a second pattern around the exposure region.

16. The apparatus of claim 15, wherein the second pattern of source nozzles is provided between the first pattern of recovery nozzles and the exposure region so that the second pattern of source nozzles is closer to the exposure region than is the first pattern of recovery nozzles.

17. The apparatus of claim 9, further comprising a control system that selectively controls when the source nozzles provide the immersion fluid to the gap.

18. The apparatus of claim 17, wherein the control system further causes the source nozzles to provide the immersion fluid ahead of the exposure region when the workpiece on the stage is scanning in a first direction.

19. The apparatus of claim 9, further comprising one or more grooves providing fluid communication between the immersion fluid and the source and recovery nozzles.

20. A method of immersion lithography for projecting an image pattern onto a workpiece through an optical element disposed opposite said workpiece with a gap between said optical element and said workpiece, an exposure region being defined between said optical element and said workpiece, said method comprising the steps of:

providing a set of source nozzles arranged adjacent to the gap;
providing a set of recovery nozzles arranged adjacent to the gap;
supplying a fluid into the gap through the set of source nozzles such that the fluid contacts both the workpiece and the optical element for immersion lithography at least while the image pattern is being projected onto the workpiece through the optical element; and
recovering the immersion fluid exiting the gap through the set of recovery nozzles,
wherein the recovery nozzles recover the immersion fluid from a recovery zone that surrounds the exposure region, and the source nozzles are located between the exposure region and the recovery zone so as to be closer to the exposure region than is the recovery zone.

21. The method of claim 20, wherein the source nozzles are arranged on at least two sides of the exposure region.

22. The method of claim 20, wherein the source nozzles are arranged on at least four sides of the exposure region.

23. The method of claim 20, wherein the recovery nozzles are arranged on at least two sides of the exposure region.

24. The method of claim 20, wherein the recovery nozzles are arranged on at least four sides of the exposure region.

25. The method of claim 20, wherein the recovery nozzles are arranged in a first pattern around the exposure region.

26. The method of claim 25, wherein the source nozzles are arranged in a second pattern around the exposure region.

27. The method of claim 26, wherein the second pattern of source nozzles is provided between the first pattern of recovery nozzles and the exposure region so that the second pattern of source nozzles is closer to the exposure region than is the first pattern of recovery nozzles.

28. The method of claim 20, further comprising selectively controlling when the source nozzles provide the immersion fluid to the gap.

29. The method of claim 28, wherein the controlling step causes the source nozzles to provide the immersion fluid ahead of the exposure region when the workpiece is scanning in a first direction.

30. The method of claim 20, further comprising providing grooves in fluid communication between the immersion fluid and the recovery nozzles.

Referenced Cited
U.S. Patent Documents
4346164 August 24, 1982 Tabarelli et al.
4480910 November 6, 1984 Takanashi et al.
5610683 March 11, 1997 Takahashi
5715039 February 3, 1998 Fukuda et al.
5825043 October 20, 1998 Suwa
7091502 August 15, 2006 Gau et al.
7443482 October 28, 2008 Novak et al.
7697111 April 13, 2010 Shirai et al.
20020020821 February 21, 2002 Van Santen et al.
20020163629 November 7, 2002 Switkes et al.
20030030916 February 13, 2003 Suenaga
20030174408 September 18, 2003 Rostalski et al.
20040000627 January 1, 2004 Schuster
20040075895 April 22, 2004 Lin
20040109237 June 10, 2004 Epple et al.
20040114117 June 17, 2004 Bleeker
20040118184 June 24, 2004 Violette
20040119954 June 24, 2004 Kawashima et al.
20040125351 July 1, 2004 Krautschik
20040136494 July 15, 2004 Lof et al.
20040160582 August 19, 2004 Lof et al.
20040165159 August 26, 2004 Lof et al.
20040169834 September 2, 2004 Richter et al.
20040169924 September 2, 2004 Flagello et al.
20040180294 September 16, 2004 Baba-Ali et al.
20040180299 September 16, 2004 Rolland et al.
20040207824 October 21, 2004 Lof et al.
20040211920 October 28, 2004 Derksen et al.
20040224265 November 11, 2004 Endo et al.
20040224525 November 11, 2004 Endo et al.
20040227923 November 18, 2004 Flagello et al.
20040253547 December 16, 2004 Endo et al.
20040253548 December 16, 2004 Endo et al.
20040257544 December 23, 2004 Vogel et al.
20040259008 December 23, 2004 Endo et al.
20040259040 December 23, 2004 Endo et al.
20040263808 December 30, 2004 Sewell
20050030506 February 10, 2005 Schuster
20050036121 February 17, 2005 Hoogendam et al.
20050036183 February 17, 2005 Yeo et al.
20050036184 February 17, 2005 Yeo et al.
20050036213 February 17, 2005 Mann et al.
20050037269 February 17, 2005 Levinson
20050042554 February 24, 2005 Dierichs et al.
20050046934 March 3, 2005 Ho et al.
20050048223 March 3, 2005 Pawloski et al.
20050068499 March 31, 2005 Dodoc et al.
20050068639 March 31, 2005 Pierrat et al.
20050073670 April 7, 2005 Carroll
20050084794 April 21, 2005 Meagley et al.
20050094116 May 5, 2005 Flagello et al.
20050100745 May 12, 2005 Lin et al.
20050110973 May 26, 2005 Streefkerk et al.
20050117224 June 2, 2005 Shafer et al.
20050122497 June 9, 2005 Lyons et al.
20050132914 June 23, 2005 Mulkens et al.
20050134815 June 23, 2005 Van Santen et al.
20050141098 June 30, 2005 Schuster
20050145803 July 7, 2005 Hakey et al.
20050146694 July 7, 2005 Tokita
20050146695 July 7, 2005 Kawakami
20050147920 July 7, 2005 Lin et al.
20050153424 July 14, 2005 Coon
20050158673 July 21, 2005 Hakey et al.
20050164502 July 28, 2005 Deng et al.
20050174549 August 11, 2005 Duineveld et al.
20050175940 August 11, 2005 Dierichs
20050185269 August 25, 2005 Epple et al.
20050190435 September 1, 2005 Shafer et al.
20050190455 September 1, 2005 Rostalski et al.
20050205108 September 22, 2005 Chang et al.
20050213061 September 29, 2005 Hakey et al.
20050213072 September 29, 2005 Schenker et al.
20050217135 October 6, 2005 O'Donnell et al.
20050217137 October 6, 2005 Smith et al.
20050217703 October 6, 2005 O'Donnell
20050219482 October 6, 2005 Baselmans et al.
20050219499 October 6, 2005 Zaal et al.
20050225737 October 13, 2005 Weissenrieder et al.
20050225738 October 13, 2005 Shirai
20050270505 December 8, 2005 Smith
20060203218 September 14, 2006 Shirai et al.
20060209285 September 21, 2006 Shirai
20070030468 February 8, 2007 Shirai
20070201011 August 30, 2007 Kokubun et al.
20090103070 April 23, 2009 Shirai et al.
Foreign Patent Documents
221 563 April 1985 DE
224 448 July 1985 DE
A-57-153433 September 1982 JP
A-58-202448 November 1983 JP
A-59-19912 February 1984 JP
A-62-65326 March 1987 JP
A-63-157419 June 1988 JP
A-57-153433 September 1992 JP
A-4-305915 October 1992 JP
A-4-305917 October 1992 JP
A-5-62877 March 1993 JP
A-6-124873 May 1994 JP
A-7-220990 August 1995 JP
A-8-316125 November 1996 JP
A-10-303114 November 1998 JP
A-10-340846 December 1998 JP
A-11-176727 July 1999 JP
A-2000-58436 February 2000 JP
WO99/49504 September 1999 WO
WO 02/091078 November 2002 WO
WO 03/077036 September 2003 WO
WO 03/077037 September 2003 WO
WO 2004/019128 March 2004 WO
WO 2004/055803 July 2004 WO
WO 2004/057589 July 2004 WO
WO 2004/057590 July 2004 WO
WO 2004/077154 September 2004 WO
WO 2004/081666 September 2004 WO
WO 2004/090577 October 2004 WO
WO 2004/090633 October 2004 WO
WO 2004/090634 October 2004 WO
WO 2004/092830 October 2004 WO
WO 2004/092833 October 2004 WO
WO 2004/093130 October 2004 WO
WO 2004/093159 October 2004 WO
WO 2004/093160 October 2004 WO
WO 2004/095135 November 2004 WO
WO 2005/001432 January 2005 WO
WO 2005/003864 January 2005 WO
WO 2005/006026 January 2005 WO
WO 2005/008339 January 2005 WO
WO 2005/013008 February 2005 WO
WO 2005/015283 February 2005 WO
WO 2005/017625 February 2005 WO
WO 2005/019935 March 2005 WO
WO 2005/022266 March 2005 WO
WO 2005/024325 March 2005 WO
WO 2005/024517 March 2005 WO
WO 2005/034174 April 2005 WO
WO 2005/050324 June 2005 WO
WO 2005/054953 June 2005 WO
WO 2005/054955 June 2005 WO
WO 2005/059617 June 2005 WO
WO 2005/059618 June 2005 WO
WO 2005/059645 June 2005 WO
WO 2005/059654 June 2005 WO
WO 2005/062128 July 2005 WO
WO 2005/064400 July 2005 WO
WO 2005/064405 July 2005 WO
WO 2005/069055 July 2005 WO
WO 2005/069078 July 2005 WO
WO 2005/069081 July 2005 WO
WO 2005/071491 August 2005 WO
WO 2005/074606 August 2005 WO
WO 2005/076084 August 2005 WO
WO 2005/081030 September 2005 WO
WO 2005/081067 September 2005 WO
Other references
  • Emerging Lithographic Technologies VI, Proceedings of SPIE, vol. 4688 (2002), “Semiconductor Foundry, Lithography, and Partners”, B.J. Lin, pp. 11-24.
  • Optical Microlithography XV, Proceedings of SPIE, vol. 4691 (2002), “Resolution Enhancement of 157 nm Lithography by Liquid Immersion”, M. Switkes et al., pp. 459-465.
  • J. Microlith., Microfab., Microsyst., vol. 1 No. 3, Oct. 2002, Society of Photo-Optical Instrumentation Engineers, “Resolution enhancement of 157 nm lithography by liquid immersion”, M. Switkes et al., pp. 1-4.
  • Nikon Corporation, 3rd 157 nm symposium, Sep. 4, 2002, “Nikon F2 Exposure Tool”, Soichi Owa et al., 25 pages (slides 1-25).
  • Nikon Corporation, Immersion Lithography Workshop, Dec. 11, 2002, 24 pages (slides 1-24).
  • Optical Microlithography XVI, Proceedings of SPIE vol. 5040 (2003), “Immersion lithography; its potential performance and issues”, Soichi Owa et al., pp. 724-733.
  • Nikon Corporation, Immersion Workshop, Jan. 27, 2004, “Update on 193 nm immersion exposure tool”, S. Owa et al., 38 pages (slides 1-38).
  • Nikon Corporation, Litho Forum, Jan. 28, 2004, “Update on 193 nm immersion exposure tool”, S. Owa et al., 51 pages (slides 1-51).
  • Nikon Corporation, NGL Workshop, Jul. 10, 2003, :Potential performance and feasibility of immersion lithography, Soichi Owa et al., 33 pages slides 1-33.
  • Aug. 3, 2010 Notice of Allowance in Japanese Application No. 2006-509591, with translation.
  • Jun. 27, 2007 Notice of Allowance in U.S. Appl. No. 11/236,759.
  • Jun. 19, 2008 Notice of Allowance in U.S. Appl. No. 11/236,759.
  • Jun. 4, 2010 Notice of Allowance in U.S. Appl. No. 12/232,513.
  • Jan. 12, 2010 Japanese Office Action in Japanese Application No. 2006-509591, with translation.
  • Apr. 20, 2005 International Search Report in International Application No. PCT/US04/10071.
  • May 6, 2010 Japanese Office Action in Japanese Application No. 2006-509591, with translation.
Patent History
Patent number: 7821615
Type: Grant
Filed: Jun 13, 2007
Date of Patent: Oct 26, 2010
Patent Publication Number: 20080030698
Assignee: Nikon Corporation (Tokyo)
Inventors: W. Thomas Novak (Hillsborough, CA), Andrew J. Hazelton (Tokyo), Douglas C. Watson (Campbell, CA)
Primary Examiner: Alan A Mathews
Attorney: Oliff & Berridge, PLC
Application Number: 11/808,850
Classifications
Current U.S. Class: With Temperature Or Foreign Particle Control (355/30); Step And Repeat (355/53); Detailed Holder For Photosensitive Paper (355/72); Methods (355/77); Making Electrical Device (430/311)
International Classification: G03B 27/52 (20060101); G03B 27/42 (20060101); G03B 27/58 (20060101); G03B 27/32 (20060101); G03C 5/00 (20060101);