Abstract: An LED display module is disclosed. The LED display module includes: an active matrix substrate including a plurality of control units; a plurality of pairs of solder bumps arranged in a matrix on the active matrix substrate by transfer printing; a plurality of LED chips including pairs of electrodes connected to the corresponding plurality of pairs of solder bumps and arranged in a matrix on the active matrix substrate by transfer printing; grid barriers formed on the active matrix substrate to isolate the plurality of LED chips into individual chip units; and a multi-color cell layer including a plurality of color cells and aligned with the active matrix substrate such that the plurality of color cells match the plurality of LED chips in a one-to-one relationship. The plurality of color cells include first color cells, second color cells, and third color cells disposed consecutively in one direction.

Abstract: A light emitting assembly comprising at least one of each of a solid state device and a thermal radiation source, couplable with a power supply constructed and arranged to power the solid state device and the thermal radiation source, to emit from the solid state device a first, relatively shorter wavelength radiation, and to emit from the thermal radiation source non-visible infrared radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and the infrared radiation, and which in exposure to said first, relatively shorter wavelength radiation, and infrared radiation, is excited to responsively emit second, relatively longer wavelength radiation.

Abstract: The present disclosure relates to a thin-film transistor, an array substrate, a display panel and a display device and fabrication methods thereof. The thin-film transistor includes a gate insulation layer, an active layer having a source region, a drain region, and a channel region, a first doping layer on the source region, a second doping layer on the drain region, and at least one third doping layer arranged between the first doping layer and the second doping layer, wherein the first, the second, and the third doping layers have same conductivity type, and wherein the third doping layer is positioned in the channel region and contacts the gate insulation layer, and the third doping layer does not contact the first doping layer and the second doping layer simultaneously, or the third doping layer is positioned on the channel region and only contacts the first or the second doping layer.

Abstract: An electrical device includes an electrical component that is at least partially covered by a covering material that includes a cement material. The covering material also includes particles having a first material and fibers having a second material. The first material and the second material each possess a higher coefficient of thermal conductivity than the cement of the cement material.

Abstract: A manufacturing method includes a first process for forming a first gate electrode for a first MOS transistor and a second gate electrode for a second MOS transistor on a substrate including a semiconductor region defined by an insulator region for element isolation, a second process for masking a portion located above the semiconductor region of the first gate electrode to introduce an impurity to a source-drain region of the first MOS transistor, and a third process for forming a first conductor member being in contact with the portion of the first gate electrode through a first hole disposed on an insulator member covering the substrate and a second conductor member being in contact with the second gate electrode through a second hole disposed on the insulator member.

Abstract: Provided herein may be a semiconductor device. The semiconductor device may include a stack. The semiconductor device may include channel layers including channel patterns passing through the stack, dummy channel patterns passing through the stack, and a coupling pattern which may be disposed below the stack and couples the channel patterns with the dummy channel patterns. The semiconductor device may include a bit line which is disposed on the stack and coupled with the channel patterns. The semiconductor device may include a well pick-up line which is disposed on the stack and coupled with the dummy channel patterns.

Abstract: A method for adjusting and controlling a boundary of graphene, comprising: providing an insulating substrate and placing the insulating substrate in a growth chamber; and feeding first reaction gas into the growth chamber, the first reaction gas at least comprising carbon source gas, and controlling a flow rate of the first reaction gas to forming a graphene structure having a first boundary shape on a surface of the insulating substrate through controlling a flow rate of the first reaction gas. The present invention realizes the controllability of the boundary of the graphene by adjusting the ratio of the carbon source gas to catalytic gas in the growth process of graphene on the surface of the substrate; the present invention can enable graphene to sequentially continuously grow by changing growth conditions on the basis of already formed graphene, so as to change the original boundary shape of the graphene.

Abstract: Disclosed embodiments relate to a semiconductor device. A semiconductor device is fabricated by attachment of a first chip to a first surface of a pad of a leadframe. Each of one or more terminals of the first chip is connected to a respective lead of the leadframe. The first chip and the first surface of the pad are then encapsulated in a packaging material, while leaving an opposite second surface of the pad exposed. A second chip is attached to a recessed portion of the second surface of the pad so that at least one terminal of the second chip is substantially coplanar with an un-recessed portion of the second surface. In one embodiment, a third chip is also attached to the recessed portion of the second surface so that at least one terminal of the third chip is substantially coplanar with the un-recessed portion of the second surface.

Abstract: A method for forming a functionalised guide pattern, includes forming a functionalisation layer on a substrate; depositing a protective layer on the functionalisation layer; forming a guide pattern on the protective layer that has a cavity opening onto the protective layer and a bottom and side walls; implanting ions with an atomic number of less than 10 in a portion of the protective layer located at the bottom of the cavity, such that the implanted portion can be selectively etched relative to the non-implanted portion; forming, in the cavity, a second functionalisation layer having first and second portions disposed on, respectively, the protective layer at the bottom of the cavity and the side walls of the cavity; and selectively etching the implanted portion and the first portion of the second functionalisation layer, to expose a portion of the functionalisation layer located at the bottom of the cavity.

Abstract: A circuit module includes a multilayer board including an inner-layer ground electrode and an extended electrode that extends from the inner-layer ground electrode in an inner layer thereof, a mounting component mounted on the multilayer board, a resin that covers the mounting component, and a shield electrode that covers the resin and at least a portion of a side surface of the multilayer board. The extended electrode is electrically connected to the inner-layer ground electrode in the multilayer board and at least a portion of the extended electrode overlaps the inner-layer ground electrode when viewed in a lamination direction of the multilayer board. An end portion of the extended electrode is exposed at the side surface of the multilayer board and connected to the shield electrode. An end portion of the inner-layer ground electrode is exposed at the side surface of the multilayer board and connected to the shield electrode.

Abstract: An optoelectronic component includes a carrier including a mounting face, wherein at least one optoelectronic semiconductor chip configured to emit electromagnetic radiation is arranged above the mounting face, a molding material is arranged above the mounting face, the optoelectronic semiconductor chips are embedded into the molding material, a cavity is formed in the molding material, the cavity is empty, radiation emission faces of the optoelectronic semiconductor chips are not covered by the molding material, the cavity is accessible through an opening in the molding material, and an opening face of the opening is smaller than a sum of all radiation emission faces of the optoelectronic semiconductor chips.

Abstract: The invention relates to an optoelectronic semiconductor element (100) comprising a semiconductor layer sequence (1) with a first layer (10) of a first conductivity type, a second layer (12) of a second conductivity type, and an active layer (11) which is arranged between the first layer (10) and the second layer (12) and which absorbs or emits electromagnetic radiation when operated as intended. The semiconductor element (100) is equipped with a plurality of injection regions (2) which are arranged adjacently to one another in a lateral direction, wherein the semiconductor layer sequence (1) is doped within each injection region (2) such that the semiconductor layer sequence (1) has the same conductivity type as the first layer (10) within the entire injection region (2). Each injection region (2) passes at least partly through the active layer (11) starting from the first layer (10).

Abstract: An optoelectronic semiconductor component and a 3D printer are disclosed. In an embodiment the component includes a carrier, a plurality of individually controllable pixels configured to emit radiation during operation, wherein the plurality of individual pixels is mounted on the carrier and is formed from at least one semiconductor material and a plurality of transport channels configured to transport a gas or a liquid through the semiconductor component in a direction transverse to and towards a radiation exit side of the semiconductor component, wherein the pixels are configured to emit radiation having a wavelength of maximum intensity of 470 nm or less, and wherein all pixels include the same semiconductor layer sequence and emit radiation of the same wavelength.

Abstract: A capacitor and a method of fabricating the capacitor are provided. The capacitor includes a structure for forming a three-dimensional capacitor, the structure being a pillar structure or a trench structure; where when the structure is a pillar structure, the aspect ratio of the pillar structure is more than 10; when the structure is a trench structure, the capacitor further includes a substrate, the trench structure is formed by a material layer disposed on the surface of a base trench of the substrate, and the aspect ratio of the trench structure is more than 10. The aspect ratio of the pillar structure of the capacitor or the aspect ratio of the trench structure may be more than 10, so that the performance of the capacitor is better.

Abstract: A substrate including a gate line and a gate electrode disposed on a substrate, an oxide semiconductor layer pattern overlapping the gate electrode, a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer pattern, a data line intersecting the gate line, a source electrode electrically connected to the oxide semiconductor layer pattern, a drain electrode electrically connected to the oxide semiconductor layer, the drain electrode spaced apart from the source electrode, and an insulating pattern including a first portion, which is disposed between the gate line and the data line and at least partially overlaps with both of the gate line and the data line.

Abstract: An integrated circuit assembly that includes a semiconductor wafer having a first coefficient of thermal expansion; an electronic circuit substrate having a second coefficient of thermal expansion that is different than the first coefficient of thermal expansion; and an elastomeric connector arranged between the semiconductor wafer and the electronic circuit substrate and that forms an operable signal communication path between the semiconductor wafer and the electronic circuit substrate.

Abstract: Embodiments of the invention are directed to a method that includes forming a nanosheet stack over a substrate. The nanosheet stack includes a first channel nanosheet having a first end region, a second end region, and a central region positioned between the first end region and the second end region. The first end region, the second end region, and the central region each includes a first type of semiconductor material, wherein, when the first type of semiconductor material is at a first temperature, the first type of semiconductor material has a first diffusion coefficient for a dopant. The central region is converted to a second type of semiconductor material, wherein, when the second type of semiconductor material is at the first temperature, the second type of semiconductor material has a second diffusion coefficient for the dopant.

Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.

Abstract: An image capture device 1001 captures an image by using a terahertz wave and includes a generating unit 112 that includes a plurality of generation elements each of which generates the terahertz wave and rests on a resting plane 117, an irradiation optical system 111 that irradiates an object with the terahertz wave, an imaging optical system 101 that images the terahertz wave that is reflected from the object, and a sensor 102 that includes pixels. The plurality of generation elements include at least a first generation element 113 and a second generation element 114 that have different angles of radiation to the object. There is an overlap region in which a region of radiation of a first terahertz wave 156 from the first generation element to the object overlaps a region of radiation of a second terahertz wave 157 from the second generation element to the object.

Abstract: A pixel structure includes a pixel electrode, a data selection line and an isolation line. The isolation line is disposed along the pixel electrode. The pixel electrode is configured to store a pixel voltage. The data selection line is configured to transmit a data signal. The isolation line is configured to reduce an influence of an electric field of the data signal on the pixel voltage of the pixel electrode. A projection area of the isolation line is overlapped with a projection area of the pixel electrode.