Abstract: The present invention relates to semiconductor devices suitable for electronic, optoelectronic and energy conversion applications. In a particular form, the present invention relates to the fabrication of a thin film solar cells and thin film transistors through the advantageous combination of semiconductors, insulators, rare-earth based compounds and amorphous and/or ceramic and/or glass substrates. Crystalline or polycrystalline thin film semiconductor-on-glass formation using alkali ion impurity barrier layer(s) are disclosed. Example embodiment of crystalline or polycrystalline thin film semiconductor-on-glass formation using rare-earth based material as impurity barrier layer(s) is disclosed. In particular, thin film silicon-on-glass substrate is disclosed as the alternate embodiment, with impurity barrier designed to inhibit transport of deleterious alkali species from the glass into the semiconductor thin film.

Abstract: A photoelectric conversion element comprising a pair of electrodes containing therebetween a compound represented by Formula (1) or Formula (2):

Abstract: Solar module structures and methods for assembling solar module structures. The solar module structures comprise pyramidal three-dimensional thin-film solar cells arranged in solar module structures. The pyramidal three-dimensional thin-film solar cell comprises a pyramidal three-dimensional thin-film solar cell substrate with emitter junction regions and doped base regions. The three-dimensional thin-film solar cell further includes emitter metallization regions and base metallization regions. The three-dimensional thin-film solar cell substrate comprises a plurality of pyramid-shaped unit cells. The solar module structures may be used in solar glass applications, building facade applications, rooftop installation applications as well as for centralized solar electricity generation.

Abstract: A pyramidal three-dimensional thin-film solar cell, comprising a pyramidal three-dimensional thin-film solar cell substrate comprising a plurality of pyramid-shaped unit cells with emitter junction regions and doped base regions, emitter metallization regions and base metallization regions. Optionally, the pyramidal three-dimensional thin-film solar cell may be mounted on a rear mirror for improved light trapping and conversion efficiency.

Abstract: A parabolic primary mirror (10) has a concave specular surface (12) that is constructed and positioned to receive solar energy and focus it towards a focal point. A secondary mirror (14) having a convex specular surface (16) is constructed and positioned to receive focused solar energy from the primary mirror and focus it onto an annular receiver (18). The annular receiver (18) may include an annular array of optical elements (100) constructed to receive solar energy from the secondary specular surface (14) and focus it onto a ring of discrete areas. A ring of solar-to-electrical conversion units are positioned on the ring of discrete areas.

Abstract: The present subject matter includes a first housing portion which is thermally conductive and which has a first housing opening, a second housing portion which is thermally conductive and which has a second housing opening, the second housing opening being hermetically sealed to the first housing opening, with the first housing portion and the second housing portion at least partially defining an interior volume, cardiac rhythm management electronics disposed in the interior volume, and a thermoelectric energy converter disposed in the interior volume, the thermoelectric energy converter having a hot pole and a cold pole, with the hot pole thermally connected to the first housing portion, and the cold pole thermally connected to the second housing portion.

Abstract: Solar module structures 210 and 270 and methods for assembling solar module structures. The solar module structures 210 and 270 comprise three-dimensional thin-film solar cells 110 arranged in solar module structures 210 and 270. The three-dimensional thin-film solar cell comprises a three-dimensional thin-film solar cell substrate (124 and 122, respectively) with emitter junction regions 1352 and doped base regions 1360. The three-dimensional thin-film solar cell further includes emitter metallization regions and base metallization regions. The 3-D TFSC substrate comprises a plurality of single-aperture or dual-aperture unit cells. The solar module structures 270 using three-dimensional thin-film solar cells comprising three-dimensional thin-film solar cell substrates with a plurality of dual-aperture unit cells may be used in solar glass applications.

Abstract: A novel thermoelectric module in which the thermoelectric elements are stacked together with thermal and electrical conductors integrated in the stack to perform the dual functions of conducting both heat and electricity.

Abstract: Methods and devices are provided for improved thermal management for photovoltaic devices and assemblies. In one embodiment, the photovoltaic device comprises of at least one photovoltaic cell based on a thin-film photovoltaic stack deposited directly onto a thermally conductive substrate. The thermally conductive substrate is connected to a heat sink in a configuration to allow sufficient heat transfer that lowers a normal operating cell temperature (NOCT) of the photovoltaic cell, thus increasing the efficiency of the cell and the module.

Abstract: A photovoltaic array with improved thermal performance includes a photovoltaic array, an electro-optic shutter disposed on the photovoltaic array, and a control system connected to at least the electro-optic shutter. The control system, based upon input from a sensor, switches the electro-optic shutter between transmissive and reflective conditions so as to control exposure of light to the photovoltaic array.

Abstract: A solar cell includes a back metal-contact layer, a P-type semiconductor layer, a P-N junction layer, an N-type semiconductor layer and a transparent electrically conductive layer. The P-type semiconductor layer is formed on the back metal-contact layer. The P-type semiconductor layer is comprised of nano particles of a P-type semi-conductive compound. The P-N junction layer is formed on the P-type semiconductor layer. The N-type semiconductor layer is formed on the P-N junction layer. The N-type semiconductor layer is comprised of nano particles of an N-type semi-conductive compound. The transparent electrically conductive layer is formed on the N-type semiconductor layer and functions as a front contact layer.

Abstract: A photoelectric conversion element comprising an electrically conductive support having thereon an oxide semiconductor electrode comprising an oxide semiconductor which is adsorbed with a dye, and a counter electrode facing the oxide semiconductor electrode through a charge transfer layer, wherein the dye is represented by Formula (1):

Abstract: Disclosed herein are a polymer solar cell, comprising a substrate, a first electrode, a hole injection layer, a photoactive layer, and a second electrode, characterized in that an electron-accepting layer is formed between the photoactive layer and the second electrode, and a method of manufacturing the polymer solar cell. The polymer solar cell comprises an electron-accepting layer between the photoactive layer and the second electrode, thereby assuring excellent power conversion efficiency. Furthermore, high power conversion efficiency can also be attained in a low-temperature thermal annealing process.

Abstract: A thermoelectric material has a composition expressed by (Fe1-pVp)100-x(Al1-qSiq)x (0.35?p?0.7, 0.01?q?0.7, 20?x?30 atomic %). The thermoelectric material includes a crystal phase having an L21 structure or a crystal phase having a B2 structure as a main phase.

Abstract: The present invention is a contoured backpan for a solar concentrator array. The backpan has depressions integrally formed in its bottom surface for seating solar concentrator modules. The depressions, in combination connecting toughs, provide a structure which is able to support an array of solar concentrators. Optional stiffening members may be attached to fee backpan to provide additional structural rigidity, as well as to support a front panel for the array.

Abstract: A novel surface texturing provides improved light-trapping characteristics for photovoltaic cells. The surface is asymmetric and includes shallow slopes at between about 5 and about 30 degrees from horizontal as well as steeper slopes at about 70 degrees or more from horizontal. It is advantageously used as either the front or back surface of a thin semiconductor lamina, for example between about 1 and about 20 microns thick, which comprises at least the base or emitter of a photovoltaic cell. In embodiments of the present invention, the shallow slopes are formed using imprint photolithography.

Abstract: A device comprises a plurality of fence layers of a semiconductor material and a plurality of alternating layers of quantum dots of a second semiconductor material embedded between and in direct contact with a third semiconductor material disposed in a stack between a p-type and n-type semiconductor material. Each quantum dot of the second semiconductor material and the third semiconductor material form a heterojunction having a type II band alignment. A method for fabricating such a device is also provided.

Abstract: There is provided novel n-type conjugated compounds based on 2-vinyl-4,5-dicyanoimidazole moieties conjugated via the vinyl group to an aromatic moiety. Also provided are thin films and photovoltaics comprising the novel compounds, as well as methods of synthesizing the compounds.

Abstract: A semiconductor structure is described, including a semiconductor substrate and a semiconductor layer disposed on the semiconductor substrate. The semiconductor layer is both compositionally graded and structurally graded. Specifically, the semiconductor layer is compositionally graded through its thickness from substantially intrinsic at the interface with the substrate to substantially doped at an opposite surface. Further, the semiconductor layer is structurally graded through its thickness from substantially crystalline at the interface with the substrate to substantially amorphous at the opposite surface. Related methods are also described.

Abstract: An i-type amorphous silicon layer 14 and a p-type amorphous silicon layer 15 are formed on a part of an inner wall of a through hole of an n-type single-crystal silicon substrate 11. Further, an i-type amorphous silicon layer 12 and an n-type amorphous silicon layer 13 are formed on a part of the inner wall of the through hole of the n-type single-crystal silicon substrate 11. The inner wall surface of the through hole is covered with the i-type amorphous silicon layer 14 and the i-type amorphous silicon layer 12.