Abstract: A hierarchical memory request stream arbitration technique merges coherent memory request streams from multiple memory request sources and arbitrates the merged coherent memory request stream with requests from a non-coherent memory request stream. In at least one embodiment of the invention, a method of generating a merged memory request stream from a plurality of memory request streams includes merging coherent memory requests into a first serial memory request stream. The method includes selecting, by a memory controller circuit, a memory request for placement in the merged memory request stream from at least the first serial memory request stream and a merged non-coherent request stream. The merged non-coherent memory request stream is based on an indicator of a previous memory request selected for placement in the merged memory request stream.

Abstract: A Random Access Memory (RAM) and method of using the same are disclosed. The RAM includes a plurality of memory cells arranged in columns and in rows with each memory cell coupled to at least one word line and at least one bit line. The RAM includes a plurality of switches with at least one of the switches coupled between two of the memory cells to allow data to be copied from one of the two memory cells to the other of the two memory cells. In another aspect, the two memory cells can be considered a dual bit cell that contains a copying mechanism. There are two interleaved memory planes, assembled from bit cells that contain two bits of information. One bit is the primary bit that corresponds to the normal RAM bit. The second bit is able to receive a copy and hold the primary value. When the copying mechanism is over, the two memory planes may act as two completely independent structures.

Abstract: According to one embodiment, a magnetic memory element includes a memory layer, a first nonmagnetic layer, a reference layer, a second nonmagnetic layer, and an adjustment layer which are stacked. The adjustment layer is configured to reduce a leakage magnetic field from the reference layer. The adjustment layer is formed by stacking an interface layer provided on the second nonmagnetic layer, and a magnetic layer having magnetic anisotropy perpendicular to a film surface. Saturation magnetization of the interface layer is larger than that of the magnetic layer.

Abstract: A semiconductor storage device crystallizes variable resistive element material layers arranged on side surfaces of multiple semiconductor layers in a stacked structure concurrently by applying a first current to any one of semiconductor layers in the stacked structure, and thereafter applies a second current to semiconductor layers other than a semiconductor layer to which the first current was applied.

Abstract: A power supply voltage for a memory chip is compared with a plurality of threshold voltages that correspond to voltages below which classes of memory operations can no longer be guaranteed. When the power supply voltage drops below a threshold voltage, appropriate action is taken, which may include generating an indicator such as a flag, proceeding with the operations in some modified manner, or disabling operations that are no longer guaranteed, either permanently or until power is restored, or until some other appropriate time.

Abstract: A method, apparatus, and manufacture for memory device startup is provided. Flash memory devices are configured such that, upon the power supply voltage reaching a pre-determined level, each flash memory is arranged to load the random access memory with instructions for the flash memory, and then execute a first portion of the instructions for the flash memory. After executing the first portion of the instructions for the flash memory, each separate subset of the flash memories waits for a separate, distinct delay period. For each flash memory, after the delay period expires for that flash memory, the flash memory executes a second portion of the instructions for the flash memory.

Abstract: Systems and methods disclosed herein include those that may receive a memory request including a requested memory address and may send the memory request directly to an address decoder associated with a stacked-die memory vault without knowing whether a repair address is required. If a subsequent analysis of the memory request shows that a repair address is required, an in-process decode of the requested memory address can be halted and decoding of the repair address initiated.

Abstract: In one embodiment, a semiconductor memory device receives a refresh command and address information, and supplies a refresh control signal and the address information in common to core chips. Each of the core chips includes a layer-address comparison circuit that determines whether the address information assigns an own core chip, and a refresh control circuit that refreshes an own memory cell based on the refresh control signal when the address information assigns the own core chip. With this arrangement, a memory capacity of a chip that is refreshed by a refresh command for one time is reduced, and therefore a shortest issuing interval of a refresh command can be shortened.

Abstract: A semiconductor device includes a source line, a bit line, and first to m-th (m is a natural number) memory cells connected in series between the source line and the bit line. Each of the first to m-th memory cells includes a first transistor having a first gate terminal, a first source terminal, and a first drain terminal, a second transistor having a second gate terminal, a second source terminal, and a second drain terminal, and a capacitor. The node of the k-th memory cell is supplied with a potential higher than that of the second gate terminal of the k-th memory cell in a data holding period in which the second gate terminal is supplied with a potential at which the second transistor is turned off.

Abstract: A phase change memory with switch (PCMS) compensates for threshold voltage drift by utilizing a lower demarcation voltage for a verify operation after programming than for a read operation occurring at least a predetermined period of time after the programming operation.

Abstract: Provided are a flash memory device and a method of verifying the same. The flash memory device includes: a memory cell for storing data; a sense amplifier for reading information of the memory cell; a load current input device for providing a load current to the sense amplifier; and a control circuit for controlling the load current input device to provide a load current during a memory cell reading operation, verifying the memory cell by using a program verify voltage if the memory cell is a programmed memory cell, and verifying the memory cell by using a compensated erase verify voltage if the memory cell is an erased memory cell.

Abstract: A semiconductor device with a reduced area and capable of higher integration and larger storage capacity is provided. A multi-valued memory cell including a reading transistor which includes a back gate electrode and a writing transistor is used. Data is written by turning on the writing transistor so that a potential according to the data is supplied to a node where one of a source electrode and a drain electrode of the writing transistor and a gate electrode of the reading transistor are electrically connected to each other, and then turning off the writing transistor and holding a predetermined potential in the node. Data is read by supplying a reading control potential to a control signal line connected to one of a source electrode and a drain electrode of the reading transistor, and then detecting potential change of a reading signal line.

Abstract: A serial advanced technology attachment dual in-line memory module device includes a power circuit, a storage chip, a control chip connected to the storage chip, and a detecting chip storing a preset voltage. The detecting chip includes a detecting pin connected to a power circuit through a first resistor and grounded through a second resistor, a ground pin grounded, a voltage pin connected to the power circuit, the control chip, and the storage chip, and an output pin connected to the storage chip. The detecting chip compares an output voltage of the power circuit detected by the detecting pin with the preset voltage, to output a control signal through the output pin to the control chip in response to the detected voltage being less than the preset voltage, to signal the control chip to control the storage chip to store data.

Abstract: In at least one embodiment, a multiplexer has a plurality of sub-circuits, and each of the plurality of sub-circuits has a first transistor, a second transistor, and a third transistor. Drains of the first transistors are coupled with a first terminal of a fourth transistor, and drains of the second transistors are coupled with a second terminal of the fourth transistor. In at least one embodiment, a method of outputting data using the multiplexer includes turning on the second transistor of a selected one of the plurality of sub-circuits responsive to a clock signal and address information. The second transistor of a non-selected one of the plurality of sub-circuits is turned off. The fourth transistor is turned on responsive to the clock signal.

Abstract: A memory system includes a memory and a memory controller operating to control the memory. The memory includes a random accessible memory including a memory cell array operable in a random access mode, a NAND flash memory, and a selection circuit making the memory controller operate either one of the random accessible memory or the NAND flash memory.

Abstract: A memory interface circuit is provided, comprising: a first signal output circuit configured to output a first signal via a first signal line to a first I/O terminal; a second signal output circuit configured to output a second signal via a second signal line to a second I/O terminal; and a noise cancellation circuit having at least one phase adjusting element and at least one gain adjusting element to reduce a noise signal induced on the second signal line due to the presence of the first signal on the first signal line, wherein the second signal line is disposed adjacent to the first signal line.

Abstract: Apparatus and methods are disclosed, such as those involving array/port consolidation and/or swapping. One such apparatus includes a plurality of port pads including a plurality of contacts; a plurality of memory arrays; and a plurality of master data lines. Each of the master data lines extends in a space between one of the port pads and a respective one of the memory arrays. Each of the master data lines is electrically connectable to the contacts of a respective one of the port pads. The apparatus further includes a plurality of local data lines, each of which extends over a respective one of the memory arrays. Each of the local data lines is electrically connectable to a respective one of the master data lines. At least one of the local data lines extends over at least two of the memory arrays. This configuration allows memory array consolidation and/or swapping without increasing die space for additional routing and adversely affecting performance of the apparatus.

Abstract: Controllable arrays in a memory may be activated and deactivated independently. In one embodiment, a processor may include a memory. The memory may be a de-interleaved memory with independently selectable arrays. Based on an address bit of an address used to access data from the memory, a wordline and downstream components may be activated while another wordline and downstream components may be deactivated.

Abstract: A read circuit for reading at least one memory cell adapted to storing a logic value, the at least one memory cell including: a storage element made of a phase-change material; and an access element for coupling the storage element to the read circuit in response to a selection of the memory cell, the read circuit including: a sense current supply arrangement for supplying a sense current to the at least one memory cell; and at least one sense amplifier for determining the logic value stored in the memory cell on the basis of a voltage developing thereacross, the at least one sense amplifier comprising a voltage limiting circuit for limiting the voltage across the memory cell for preserving the stored logic value, wherein the voltage limiting circuit includes a current sinker for sinking a clamping current, which is subtracted from the sense current and depends on the stored logic value.

Abstract: A clock control device includes a set circuit for triggering an input address in response to an internal command signal to output a first address, a shift register including a plurality of flip-flops connected in series wherein some of the flip-flops perform a flip-flop operation of the first address in synchronism with an internal clock to provide a second address and the remaining flip-flops sequentially conduct a flip-flop operation of the second address in synchronism with a synchronous clock to produce an internal address, an active signal generator for outputting an active signal based on state of an active control signal indicating whether or not each bank is activated and a precharge control signal, and a clock generator for generating the synchronous clock depending on the internal clock and the active signal.