Abstract: A method for depositing a conductive coating on a surface is provided, the method including treating the surface by depositing fullerene on the surface to produce a treated surface and depositing the conductive coating on the treated surface. The conductive coating generally includes magnesium. A product and an organic optoelectronic device produced according to the method are also provided.

Abstract: According to one embodiment, an organic EL device includes an insulating substrate including a first main surface and a second main surface, a switching element formed on the insulating substrate at the first main surface side, a first electrode electrically connected to the switching element, a second electrode opposed to the first electrode, an organic luminescent layer disposed between the first electrode and the second electrode, a reflective plate disposed between the insulating substrate and the first electrode, and a conductive film covering the second main surface of the insulating substrate.

Abstract: There is provided an electro-optical device including a light-emitting layer that has a first light-emitting element and a second light-emitting element which are adjacent to each other and a color filter layer that has a first color filter provided corresponding to the first light-emitting element and a second color filter provided corresponding to the second light-emitting element, in which an inter-element distance between the first light-emitting element and the second light-emitting element is 1.5 ?m or less, and a thickness of layer between the light-emitting layer and the color filter layer is 6 times or less the inter-element distance.

Abstract: An image sensor device includes a first substrate, an interconnect structure, a conductive layer, a conductive via and a second substrate. The first substrate includes a first region including a pixel array and a second region including a circuit. The interconnect structure is over the pixel array or the circuit. The interconnect structure electrically connecting the circuit to the pixel array. The conductive layer is on the interconnect structure. The conductive via passes through the second substrate and at least partially embedded in the conductive layer. The second substrate is over the conductive layer.

Abstract: A method of processing a reconstituted wafer that supports IC chips includes operably disposing the reconstituted wafer in a lithography tool that has a depth of focus and a focus plane and that defines exposure fields on the reconstituted wafer, wherein each exposure field includes at least one of the IC chips. The method also includes scanning the reconstituted wafer with a line scanner to measure a surface topography of the reconstituted wafer as defined by the IC chips. The method also includes, for each exposure field: i) adjusting a position and/or an orientation of the reconstituted wafer so that a photoresist layers of the IC chips within the given exposure field fall within the depth of focus; and ii) performing an exposure with the lithography tool to pattern the photoresist layers of the IC chips in the given exposure field.

Abstract: A flexible display device includes a flexible display panel having a bending area to be folded, and including a display substrate, and a thin-film encapsulation layer above the display substrate, a driving portion, and a function layer below the flexible display panel, and including a step portion below which the flexible display panel is electrically connected to the driving portion.

Abstract: An organic light emitting display (OLED) device is disclosed. The OLED device may include a substrate comprising a display region and a peripheral region, the display region comprising a first transmission portion and at least one light emitting portion, the peripheral region comprising a second transmission portion and at least one electrode placement portion, a first electrode in the display region, an organic light emitting layer on the first electrode, a second electrode in the display region and the peripheral region, the second electrode opposite to the first electrode with respect to the organic light emitting layer, and a third electrode in the peripheral region. The first electrode may be patterned as an island shape to be separated per the light emitting portion. The third electrode may be patterned as an island shape to be separated per the electrode placement portion.

Abstract: Embodiments of the disclosure generally provide methods of forming thin film transistor (TFT) device structure with good interface management between active layers of a metal electrode layer and/or source/drain electrode layers and a nearby insulating material so as to provide high electrical performance devices, or for other suitable display applications. In one embodiment, a thin film transistor structure includes a contact region formed between fluorine-doped source and drain regions disposed on a substrate, a gate insulating layer disposed on the contact region, and a metal electrode layer disposed on the gate insulator layer.

Abstract: Embodiments of the disclosure provide an array substrate and a manufacturing method thereof, and a display device. The method includes: forming a semiconductor material film, a first insulation material film and a first conductive material film successively on a base substrate, and processing these films through a single patterning process to form an active pattern, a gate insulation pattern and a gate electrode; forming a second insulation layer and forming two contact holes in the second insulation layer and gate insulation pattern; forming a second conductive material film and forming two contact structures from portions of this layer; and forming a third conductive material film, and processing this layer through a single patterning process to form a pixel electrode, and source and drain electrodes being in direct contact with the two contact structures respectively, the pixel electrode and one contact structure being integrated into one piece.

Abstract: A semiconductor device including a field-effect transistor having source and drain source regions, first and second gate electrodes and a protective diode connected to the transistor. The first gate electrode is formed over a first gate insulating film in a lower part of a trench. The second gate electrode is formed over a second gate insulating film in an upper part of the trench. The first gate electrode includes a first polysilicon film, and the second gate electrode includes a second polysilicon film, wherein an impurity concentration of the first polysilicon film is lower than an impurity concentration of the second polysilicon film.

Abstract: A display substrate includes a first switching element electrically connected to a gate line extending in a first direction and a data line extending in a second direction crossing the first direction, an organic layer disposed on the first switching element, a shielding electrode disposed on the organic layer and overlapping the data line, a pixel electrode disposed on the same layer as the shielding electrode and a light-blocking pattern disposed on the shielding electrode and adjacent to a corner of the pixel electrode.

Abstract: A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.

Abstract: An organic compound having a high T1 level is provided. An element emitting phosphorescence in the blue and green regions is provided. An organic compound having a high glass-transition temperature is provided. A light-emitting element, a light-emitting device, an electronic appliance, or a lighting device having high heat resistance is provided. A light-emitting element includes at least a hole-transport layer, a light-emitting layer, and an electron-transport layer between an anode and a cathode. An anthracene compound represented by General Formula (G1) is contained in at least one of the hole-transport layer, the light-emitting layer, and the electron-transport layer.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a first tube defining an inner space, a substrate holder in which a plurality of substrates are vertically stacked in the inner space of the first tube, the substrate holder defining a plurality of processing spaces in which the substrates are individually processed, a gas supply unit having a plurality of main injection holes each of which is vertically defined to correspond to each of the processing spaces to supply a gas into the first tube, and an exhaust unit configured to exhaust the gas supplied into the plurality of processing spaces in the first tube to the outside. The exhaust unit includes a plurality of exhaust holes facing the main injection holes and vertically arranged in a line to correspond to the processing spaces. Therefore, the gas may smoothly flow on the substrate.

Abstract: A method of applying phosphor to an unpackaged Light-Emitting Diode (LED) die includes transferring the unpackaged LED die directly to a product substrate; disposing a coverlay on the product substrate to create a cavity around the unpackaged LED die; and applying phosphor to substantially fill the cavity around the unpackaged LED die, the applying including at least one of using a squeegee to place the phosphor into the cavity, spraying the cavity with the phosphor, or disposing the phosphor in a sheet form onto the unpackaged LED die.

Abstract: Disclosed is a method for manufacturing an OLED device. The method includes steps of: providing a substrate and manufacturing an anode and a buffer layer in sequence on the substrate; subjecting the substrate to an acid treatment; drying the substrate and manufacturing a liquid light emitting layer on the buffer layer; providing a cover plate and manufacturing a cathode and an electron transport layer in sequence on the cover plate; subjecting the cover plate to the acid treatment; and bonding the cover plate and the substrate together by lamination to obtain an OLED device. According to the method, performance of a device can be improved stably, and thus light emitting efficiency of the device can be enhanced.

Abstract: An image sensor is disclosed. The image sensor includes a pixel array including a plurality of pixel units, a controller configured to drive the pixel array, and an analog-digital conversion block configured to convert a sensing signal output from the pixel array to a digital signal, wherein each of the pixel units includes a photodiode and a plurality of transistors on a semiconductor substrate, each of the transistors includes a gate electrode and a gate dielectric layer, each gate dielectric having a thickness, and the thickness of at least one of the gate dielectric layers is different from the thickness of at least one of the other gate dielectric layers.

Abstract: The present disclosure relates to methods and structures that involve the use of directed self-assembly to selectively remove at least one fin or fin section from a pattern of parallel fins in a semiconductor structure.

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LEDs comprises: forming a mask layer on the backside of a laser-transparent original substrate, wherein micro-LEDs are formed on the front-side of the original substrate; bringing the micro-LEDs on the original substrate in contact with preset pads on a receiving substrate; and irradiating the original substrate from the original substrate side with laser through the mask layer, to lift-off micro-LEDs from the original substrate.

Abstract: Methods and structures that may be implemented in one example to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) such as sensors and actuators. For example, structures having varying characteristics may be fabricated using the same basic process flow by selecting among different process options or modules for use with the basic process flow in order to create the desired structure/s. Various process flow sequences as well as a variety of device design structures may be advantageously enabled by the various disclosed process flow sequences.