Abstract: Embodiments are directed to a sensor having a first electrode, a second electrode and a detector region electrically coupled between the first electrode region and the second electrode region. The detector region includes a first layer having a topological insulator. The topological insulator includes a conducting path along a surface of the topological insulator, and the detector region further includes a second layer having a first insulating magnetic coupler, wherein a magnetic field applied to the detector region changes a resistance of the conducting path.

Abstract: A process of forming a High Electron Mobility Transistor (HEMT) is disclosed. The HEMT includes a substrate, a channel layer, a barrier layer, and heavily doped regions made of metal oxide. The channel layer and the barrier layer provide recesses and a mesa therebetween. The heavily doped regions are formed by partially removing portions of a heavily doped layer on the mesa so as to have slant surfaces facing the gate electrode. The slant surfaces make angle of 135° to 160° relative to the top horizontal level of the mesa.

Abstract: Membrane transducer structures and thin-film encapsulation methods for manufacturing the same are provided. In one example, the thin film encapsulation methods may be implemented to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) that include the membrane transducers.

Abstract: A heterojunction bipolar transistor unit cell may include a compound semiconductor substrate. The heterojunction bipolar transistor unity may also include a base mesa on the compound semiconductor substrate. The base mesa may include a collector region on the compound semiconductor substrate and a base region on the collector region. The heterojunction bipolar transistor unity may further include a single emitter mesa on the base mesa.

Abstract: A display device is disclosed. The display device comprises an array structure comprising a plurality of primary pixel element structures arranged in a matrix. A primary pixel element structure comprises a plurality of pixel element structures arranged in a second direction. A pixel element structure comprises first, second, and third sub-pixel elements, each comprising a light-emitting region and a light-transmitting region disposed at one side of the light-emitting region and adjacent to the light-emitting region in a first direction, and the first direction being perpendicular to the second direction. When the display device is turned off, a scene on an opposite side of the display device is observed by an observer on either side of the display device, and when the display device is turned on, a scene on the opposite side of the display device is observed by the observer on a side where no light is emitted.

Abstract: Disclosed herein is a biosensor. The biosensor includes: a mount; a bio-sensing chip disposed on the mount and including at least one thin film transistor; a reaction layer disposed on the bio-sensing chip and including at least one of a biological sample and a biochemical reaction reagent; an upper electrode disposed on an upper surface of the reaction layer and supplying electric signal to the reaction layer; and at least one pad disposed on the bio-sensing chip and electrically connected to the bio-sensing chip. The biosensor can measure voltage-current characteristics in a linear region and a saturation region through examination with respect to a target substance using the thin film transistor.

Abstract: There is disclosed herein a circuitry system comprising first and second IC chips, configured or configurable such that; the first IC chip has an output terminal connected to receive an output signal from an output-signal unit of the first IC chip, the output-signal unit being connected between high and low voltage-reference sources of the first IC chip, the high and low voltage-reference sources being connected to respective high and low voltage-reference terminals of the first IC chip; and the second IC chip has an input terminal connected in a potential-divider arrangement between high and low voltage-reference terminals of the second IC chip, wherein: the high and low voltage-reference terminals of the first IC chip are respectively connected to the high and low voltage-reference terminals of the second IC chip; and the output terminal of the first IC chip is connected to the input terminal of the second IC chip.

Abstract: A semiconductor device is provided that includes a pedestal of an insulating material present over at least one layer of a semiconductor material, and at least one fin structure in contact with the pedestal of the insulating material. Source and drain region structures are present on opposing sides of the at least one fin structure. At least one of the source and drain region structures includes at least two epitaxial material layers. A first epitaxial material layer is in contact with the at least one layer of semiconductor material. A second epitaxial material layer is in contact with the at least one fin structure. The first epitaxial material layer is separated from the at least one fin structure by the second epitaxial material layer. A gate structure present on the at least one fin structure.

Abstract: A method for forming metallization in a workpiece includes electrochemically depositing a second metallization layer on the workpiece comprising a nonmetallic substrate having a dielectric layer disposed over a substrate and a continuous first metallization layer disposed on the dielectric layer and having at least one microfeature comprising a recessed structure, wherein the first metallization layer at least partially fills a feature on the workpiece, where the first metallization layer is a cobalt or nickel metal layer, and wherein the second metallization layer is a cobalt or nickel metal layer that is different from the metal of the first metallization layer, electrochemically depositing a copper cap layer after filling the feature, and annealing the workpiece to diffuse the metal of the second metallization layer into the metal of the first metallization layer.

Abstract: Aspects of the disclosure include methods of treating a substrate to remove one or more of voids, seams, and grain boundaries from interconnects formed on the substrate. The method includes heating the substrate in an environment pressurized at supra-atmospheric pressure. In one example, the substrate may be heated in a hydrogen-containing atmosphere.

Abstract: Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.

Abstract: An element (1) is provided for stabilising an optoelectronic device (7), wherein the element (1) comprises a main body (1C), wherein the main body (1C) consists of a glass or at least comprises a glass and wherein the main body (1C) comprises a first and a second surface (1A, 1B). The first and second surface (1A, 1B) are opposite to one another and extend in each case in a lateral main direction of extension of the element (1), wherein a protective layer (2A, 2B) is formed at least at one of the surfaces (1A, 1B) and wherein the protective layer (2A, 2B) is configured and arranged in such a way that cracks (3) present in the main body (1C) are filled in by a material of the protective layer (2A, 2B). In addition, an optoelectronic device (7) is provided.

Abstract: According to various embodiments, an electrode may include at least one layer including a chemical compound including aluminum and titanium.

Abstract: An organic EL device includes a pair of electrodes and an organic compound layer between pair of electrodes. The organic compound layer includes an emitting layer including a first material, a second material and a third material, in which singlet energy EgS(H) of the first material, singlet energy EgS(H2) of the second material, and singlet energy EgS(D) of the third material satisfy a specific relationship.

Abstract: A slim-bezel flexible display device and a manufacturing method thereof are disclosed. A through hole is formed in a first base plate of a lower substrate in an area adjacent to an edge thereof. A conductive connection body is mounted in the through hole. The conductive connection body is connected to a circuit layout layer and a flexible connection circuit that is connected to a drive circuit board so as to have the drive circuit board and the circuit layout layer connected. It is not necessary for the side of the lower substrate associated with the circuit layout layer to provide an additional connection zone for connection with the flexible connection circuit so that an effective display zone of a flexible display device can be enlarged and a bezel area can be reduced.

Abstract: The present invention provides a semiconductor device manufacturing method that can sense the atmospheric air leakage more precisely and that can prevent too many defective products from being manufactured. The semiconductor device manufacturing method according to the embodiment includes the steps of: forming a barrier layer over an interlayer insulating film over a semiconductor substrate; forming a wiring layer over the barrier layer; forming a mask having an opening and configured by a photosensitive organic film over the wiring layer; patterning the wiring layer by etching the wiring layer through the opening; and removing the mask by a plasma processing using an ashing gas. The step of removing the mask includes the step of sensing an atmospheric air leakage that is mixture of the atmospheric air into the ashing gas by measuring an emission intensity of nitrogen in the ashing gas using an ultraviolet photometer.

Abstract: Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.

Abstract: Disclosed herein are processes for fabricating organic photosensitive optoelectronic devices with a vertical compositionally graded organic active layer. The processes use either a single-stamp or double-stamp printing technique to transfer the vertical compositionally graded organic active layer from a starting substrate to a device layer.

Abstract: To constitute a translucent electrode including a base layer having a surface in which surface roughness (Ra) is 2 or less and elastic modulus is 20 GPa or more, and an electrically conductive layer that is provided on the surface side of the base layer and that contains silver as the principal component.

Abstract: A pixel element structure is disclosed. The pixel element structure includes first, second, and third sub-pixel elements, each including a light-emitting region. At least one of the first, second, and third sub-pixel elements includes a light-transmitting region, where the light-emitting region includes an organic light-emitting diode light-emitting structure, and where the organic light-emitting diode light-emitting structure includes a first substrate, and a nontransparent anode, a pixel defining layer, an organic layer and a cathode, sequentially arranged above the first substrate.