Abstract: A substrate processing apparatus includes a substrate processing unit and a controller. The substrate processing unit is configured to perform an etching processing on one or more substrates each having a silicon nitride film and a silicon oxide film on a surface thereof with a processing liquid containing a phosphoric acid aqueous solution and a silicic acid compound. The controller is configured to control individual components of the substrate processing apparatus. The controller includes a correction unit configured to correct a phosphoric acid concentration of the processing liquid such that etching selectivity of the silicon nitride film with respect to the silicon oxide film becomes constant at a given value from a beginning of the etching processing to an end thereof.

Abstract: A method, apparatus and system for processing a wafer in a plasma chamber system, which includes at least a plasma generating element and a biasing electrode, include generating a plasma in the plasma chamber system by applying a source RF source power to the plasma generating element for a first period of time of a pulse period of the RF source power, after the expiration of the first period of time, removing the source RF source power, after a delay after the removal of the RF source power, applying an RF bias signal to the biasing electrode for a second period of time to bias the generated plasma towards the wafer, and after the expiration of the second period of time, removing the RF bias signal from the biasing electrode before a next pulse period of the RF source power. The generated plasma biased toward the wafer is used to process the wafer.

Abstract: A wafer placement table includes: a ceramic plate having a wafer placement surface, a cooling plate having a refrigerant flow path and being provided on a lower surface-side of the ceramic plate; a first ceramic plate penetration section that reaches the wafer placement surface; a second ceramic plate penetration section that reaches the wafer placement surface; a first gas passage that communicates with the first ceramic plate penetration section; and a second gas passage that communicates with the second ceramic plate penetration section. The first gas passage has a first gas intermediate passage, the second gas passage has a second gas intermediate passage, the second gas intermediate passage is provided above the first gas intermediate passage, and the refrigerant flow path has a first flow path section provided above the first gas intermediate passage, and a second flow path section provided below the second gas intermediate passage.

Abstract: A continuous plasma processing system with adjustable electrode includes a frame shape carrier plate for holding a to-be-processed object, a loading chamber for inputting the to-be-processed object, a processing chamber, and an unloading chamber for outputting the finished object. The processing chamber has a first electrode, a second electrode, and a moving device controlling the second electrode to move between an electrically disconnected position and an electrically conducted position. When the second electrode is away from the first electrode and does not contact the to-be-processed object, the second electrode is at the electrically disconnected position. When the second electrode moves toward the first electrode to push the to-be-processed object to leave the frame shape carrier plate, the second electrode is at the electrically conducted position. The plasma electric field is prevented from being affected by particles on the carrier plate.

Abstract: According to one embodiment of the present disclosure, a substrate cleaning apparatus includes a hydrophilization chamber connected to a polishing apparatus and that accommodates a substrate having a polished surface polished by the polishing apparatus; a support provided in the hydrophilization chamber; a liquid supply unit that supplies a cleaning liquid to the polished surface of the substrate to hydrophilize the polished surface; an imaging unit that captures an image of the polished surface supplied with the cleaning liquid; a determination unit that determines whether hydrophilization is achieved on a basis of the image; an adjustment unit that adjusts the supply of the cleaning solution by the liquid supply unit depending on a determination result obtained by the determination unit; and a cleaning chamber connected to the hydrophilization chamber and that cleans the polished surface hydrophilized by the cleaning liquid.

Abstract: A semiconductor wafer manufacturing apparatus includes a reaction chamber, a reactant gas supply pipe and a reactant gas discharge pipe communicated with the reaction chamber, a rotating device having a cylindrical member, a lid member disposed on one end portion of the cylindrical member, a heating device disposed in a hollow chamber that is a space surrounded by the cylindrical member and the lid member, an inert gas supply pipe and an inert gas discharge pipe communicated with the hollow chamber, and a controller. The controller is configured to adjust an amount of an inert gas discharged from the inert has discharge pipe such that a pressure in the hollow chamber is higher than a pressure in the reaction chamber and equal to or lower than a pressure of a minimum closing portion of the lid member.

Abstract: Disclosed is a molecular beam epitaxy (MBE) thin film growth apparatus. The MBE thin film growth apparatus includes a growth chamber which is connected to a vacuum pump and of which an inside is maintained in an ultra-high vacuum state, a substrate manipulator which is provided inside the growth chamber and on which a substrate is mounted, a load-lock chamber which is provided outside the growth chamber and communicates with the growth chamber and in which at least one substrate, which is mounted on the substrate manipulator, for growing a thin film is located, and a substrate transfer rod that transfers the substrate from the load-lock chamber to the growth chamber or from the growth chamber to the load-lock chamber, wherein the load-lock chamber is disposed to face the substrate manipulator and disposed collinear with a substrate transfer path of the substrate transfer rod.

Abstract: A plasma processing device includes: a plurality of processing chambers; a junction exhaust pipe into which a plurality of exhaust flow paths for evacuating interiors of the plurality of processing chambers joins; and a plurality of branch exhaust pipes disposed between the plurality of exhaust flow paths and the junction exhaust pipe and connecting the junction exhaust pipe to the plurality of exhaust flow paths, respectively, wherein each of the plurality of branch exhaust pipes includes a mechanism, which is disposed in a flow path of the branch exhaust pipe, to deactivate energy of hot electrons flowing through the flow path.

Abstract: Assemblies, system, methods, and devices for monitoring characteristics of a substrate disposed in a recess within a processing chamber. An assembly includes an enclosure structure forming an interior volume configured to support a substrate disposed within the interior volume. The substrate may be selectively removed from the enclosure structure. The enclosure structure may include an upper interior surface and a lower interior surface located below the upper interior surface. The interior volume is configured to direct a first mass transport of a reactive species to a first surface of the substrate, the reactive species corresponding to a substrate process. A first portion of the lower interior surface is configured to support the substrate. A second portion of the lower interior surface forms a channel configured to provide a second mass transport of the reactive species to a second surface of the substrate opposite the first surface.

Abstract: A base disposed in a plasma processing chamber. An electrostatic chuck disposed on an upper portion of the base, the electrostatic chuck including a first part and a second part. A first heater electrode layer group including at least one heater electrode layer disposed in the first part. A second heater electrode layer group including at least one heater electrode layer disposed in the second part. A power source is electrically connected to the first heater electrode layer group and the second heater electrode layer group. A controller configured to periodically and sequentially supply DC current from the power source to heater electrode layers included in the first heater electrode layer group and heater electrode layers included in the second heater electrode layer group.

Abstract: A semiconductor processing station includes first and second chambers, and a cooling stage. The second chamber includes a cooling pipe disposed inside the second chamber, and an external pipe. The cooling pipe includes a first segment disposed along a sidewall of the second chamber, and a second segment disposed perpendicular to the first segment and located above a wafer carrier in the second chamber. An end of the second segment is connected to an end of the first segment. The external pipe is connected to the second segment distal from the end of the second segment to provide a fluid to flow through the cooling pipe from an exterior to an interior of the second chamber. The fluid discharges toward the wafer carrier through the first segment. The first chamber is surrounded by the second chamber and the cooling stage, and communicates between the cooling stage and the second chamber.

Abstract: A gas delivery conduit configured to deliver gas to a device comprises an input end maintained at a first potential into which a gas is delivered from a source under a regulated pressure, a pressure regulator coupled to the input end for delivering a regulated flow of gas to the conduit, and an output end maintained at a second potential through which the gas is delivered to the device, with a direction of gas flow moving through the conduit from the input end to the output end. The potential difference between the first potential and second potential forms an electric field. A first plurality of electrically nonconductive conduit windings is disposed between the input end and output end and arranged such that the electric field running between the input end and output end runs substantially perpendicularly across the plurality of conduit windings and the direction of gas flow through the conduit.

Abstract: A focus ring for mounting an etching target in a plasma etching device, includes a seating portion, including a seating surface configured to accommodate the etching target; and a main body, formed on an outer circumference of the seating portion, comprising a groove portion having a groove disposed in an upper surface of the main body. A height of an upper surface of the groove portion is lower than a maximum height of the upper surface of the main body.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having an inner space; a plate separating the inner space into a first space which is above and a second space which is below and having a plurality of through holes; a first gas supply unit configured to supply a first gas to the first space; a plasma source for generating a plasma at the first space or the second space; and a monitoring unit installed at the plate and configured to monitor a characteristic of the plasma generated at the first space or the second space.

Abstract: Provided is a substrate processing apparatus, including: transportation chamber maintained in an atmospheric environment where a substrate is transported; a vacuum processing chamber connected with the transportation chamber through a load lock chamber; a substrate placing table installed in the vacuum processing chamber and having a body part and a surface part that is attachable to/detachable from the body part; a storage unit installed in the load lock chamber or the transportation chamber and configured to receive the surface part; and a transportation mechanism configured to transport the substrate from the transportation chamber to the vacuum processing chamber through the load lock chamber and transport the surface part between the storage unit and the body part of the vacuum processing chamber.

Abstract: A plasma-exclusion-zone ring for a substrate processing system that is configured to process a substrate includes a ring-shaped body, an upper portion of the ring-shaped body, a base and a plasma-exclusion-zone ring notch. The upper portion of the ring-shaped body defines a radially inner surface and a top surface. The base of the ring-shaped body defines a radially outer surface, a first bottom surface extending radially inward from the radially outer surface, and a second bottom surface extending radially inward from the first bottom surface. The plasma-exclusion-zone ring notch is proportional to an alignment notch of the substrate. The first bottom surface is tapered and extends at an acute angle from the second bottom surface to the radially outer surface. The first bottom surface is configured to extend over and oppose a periphery of the substrate.

Abstract: Exemplary semiconductor processing systems may include a processing chamber defining a processing region. The systems may include a foreline coupled with the processing chamber, the foreline defining a fluid conduit. The systems may include a radical generator having an inlet and an outlet. The outlet may be fluidly coupled with the foreline. The systems may include a gas source fluidly coupled with the inlet of the radical generator. The systems may include a throttle valve coupled with the foreline downstream of the radical generator.

Abstract: A plasma source comprises a metal member having an inlet and forming a wall that delimits an upstream flow of a processing gas supplied from the inlet, a ceramic member having an outlet and forming a wall that delimits a downstream flow of the processing gas discharged from the outlet, and a power supply device configured to supply a power for plasma generation into a chamber. The chamber includes the metal member and the ceramic member, and is configured to discharge an activated gas generated by producing plasma from the processing gas to the outside of the chamber through the outlet.

Abstract: The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) containing at least in part the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloadi

Abstract: The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a loading/unloading chamber (400) at least in part adjacent to the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said loading/unloading chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between