Abstract: Clamping assemblies for sealing an annular chamber and reaction chamber of a reactor system are disclosed. The clamping assemblies may include actuators that are symmetrically arranged in two or more independently controllable groups of actuators.

Abstract: A deposition system includes a system housing having a housing interior, a fixture transfer assembly having a generally sloped fixture transfer rail extending through the housing interior, a plurality of sequentially ordered deposition chambers connected by the fixture transfer rail, a controller interfacing with the processing chambers and at least one fixture carrier assembly carried by the fixture transfer rail and adapted to contain at least one substrate. The fixture carrier assembly travels along the fixture transfer rail under influence of gravity. A substrate fixture contains a substrate. The substrate fixture comprises a fixture frame. The fixture frame is defined by multiple circular members adjacently joined in a circular arrangement. Each circular member has a fixture frame opening sized to receive the substrate. Lens support arms may integrate into the circular members, extending in a curved disposition into the fixture frame opening to retain the substrate. A deposition method is also disclosed.

Abstract: The present invention disclosed herein relates to a substrate treating apparatus, and more particularly, to an apparatus for treating a substrate using plasma. Embodiments of the present invention provide substrate treating apparatuses including a chamber having a treating space defined therein, a support member disposed in the chamber to support a substrate, a gas supply unit supplying a gas into the chamber, a plasma source generating plasma from the gas supplied into the chamber, a baffle disposed to surround the support member in the chamber and having through holes to exhaust a gas in the treating space, and a shielding unit preventing an electromagnetic field from an inside of the chamber to an outside of the chamber.

Abstract: A stable and highly reliable device for detecting damage or contact failures of respective parts is provided. The device includes a processing chamber for processing a substrate; a heater for heating the substrate; a substrate support accommodating the heater and installed inside the processing chamber; a shaft for supporting the substrate support; a wire inserted through the shaft; a supporting unit for holding the wire; and a temperature detector connected to the supporting unit.

Abstract: A linear evaporation source is disclosed. In one aspect, the source includes a crucible storing an evaporated material, a heater unit surrounding the crucible and heating the crucible, and a plurality of lateral reflectors surrounding a lateral surface of the heater unit. Each of the lateral reflectors includes a first reflector combined with the heater unit while being spaced apart from the heater unit and having a plurality of first openings and a second reflector movably combined with the first reflector and having a second opening. Open ratios of the lateral reflectors are independently adjusted to control a temperature of the crucible according to areas of the crucible. Thus, deposition uniformity of the linear evaporation source is enhanced.

Abstract: Methods and apparatus for processing substrates are disclosed herein. In some embodiments, a substrate support to support a substrate in a processing chamber includes a dielectric insulator plate; a conductive plate supported on the dielectric insulator plate, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein an edge portion of the conductive plate tapers in a radially outward direction; and a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductor plate.

Abstract: Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, and a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface. A hollow RF feed is configured to deliver RF power, the hollow RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly.

Abstract: A deposition system includes a system housing having a housing interior, a fixture transfer assembly having a generally sloped fixture transfer rail extending through the housing interior, a plurality of processing chambers connected by the fixture transfer rail, a controller interfacing with the processing chambers and at least one fixture carrier assembly carried by the fixture transfer rail and adapted to contain at least one substrate. The fixture carrier assembly travels along the fixture transfer rail under influence of gravity.

Abstract: A deposition system includes a system housing having a housing interior, a fixture transfer assembly having a generally sloped fixture transfer rail extending through the housing interior, a plurality of processing chambers connected by the fixture transfer rail, a controller interfacing with the processing chambers and at least one fixture carrier assembly carried by the fixture transfer rail and adapted to contain one substrate. The fixture carrier assembly travels along the fixture transfer rail under influence of gravity.

Abstract: Provided are a plasma generating apparatus and a substrate treating apparatus. The plasma generating apparatus includes a plurality of ground electrodes arranged inside a vacuum container and extending parallel to each other and power electrodes arranged between the ground electrodes. An area where a distance between the ground electrode and the power electrode is constant exists, and the power electrodes are tapered in a direction facing the substrate. The power electrodes are connected to an RF power source, and height of the power electrode is greater than that of the ground electrode in the direction facing the substrate.

Abstract: A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.

Abstract: A deposition reactor includes an in-feed part that defines an expansion space which leads reactants as a top to bottom flow from a plasma source towards a reaction chamber, the expansion space widening towards the reaction chamber, and a lifting mechanism for loading at least one substrate to the reaction chamber from the top side of the reaction chamber. The deposition reactor deposits material on the at least one substrate in the reaction chamber by sequential self-saturating surface reactions.

Abstract: A device for etching a substrate includes a first reaction chamber into which a first gas is introduced; a second reaction chamber into which a second gas is introduced; and a coil device that generates an electromagnetic alternating field. At least one first reactive species is generated by applying the electromagnetic alternating field to the first gas and at least one second reactive species is generated by applying the electromagnetic alternating field to the second gas. The device further includes a separating device that prevents a direct gas exchange between the first and second reaction chambers; an etching chamber configured to receive the substrate to be anisotropically etched; and a mixing device configured such that the reactive species enter the mixing device, are mixed together, and in the mixed state act on the substrate so as to anisotropically etch the substrate in the etching chamber.

Abstract: An apparatus (9) for plasma treating multiple containers. The apparatus includes a manifold (2) comprising at least a first chamber with multiple outlet openings and multiple hollow, electrically-conductive nozzles (10) for at least one of delivering or exhausting plasma-generating gas. The multiple hollow, electrically-conductive nozzles are connected to the multiple outlet openings and protrude from the manifold. A method of plasma treating multiple containers is also disclosed. The method includes providing a reactor system comprising an apparatus disclosed herein, inserting the multiple hollow, electrically-conductive nozzles into the multiple containers (30), evacuating the multiple containers, grounding the multiple hollow, electrically-conductive nozzles while applying radio frequency power to the multiple containers, providing a gas inside the containers, and generating a plasma. At least one of evacuating or providing the gas is carried out through the hollow, electrically-conductive nozzles.

Abstract: A component of a substrate support assembly such as a substrate support or edge ring includes a plurality of current loops incorporated in the substrate support and/or the edge ring. The current loops are laterally spaced apart and extend less than halfway around the substrate support or edge ring with each of the current loops being operable to induce a localized DC magnetic field of field strength less than 20 Gauss above a substrate supported on the substrate support during plasma processing of the substrate. When supplied with DC power, the current loops generate localized DC magnetic fields over the semiconductor substrate so as to locally affect the plasma and compensate for non-uniformity in plasma processing across the substrate.

Abstract: A system for performing a rapid alternating process (RAP) etch includes a bias frequency adjustment module that selectively adjusts a bias frequency of a bias radio frequency (RF) source. The bias RF source provides a bias power to a substrate processing system. A control module determines a tuned frequency of the bias RF source. The tuned frequency corresponds to an impedance matching value. The control module controls the bias frequency adjustment module to adjust the bias frequency to a detuned frequency. The detuned frequency increases the bias power of the bias RF source to a predetermined range.

Abstract: In a plasma processing apparatus, a heating element 50 provided in a susceptor 12 is electrically connected to a heater power supply 58 disposed at an outside of a chamber 10 via an internal conductor 51 provided through the susceptor 12, a power feed conductor 52 provided across a space SP, a filter unit 54 and an electric cable 56. A casing 110 of the filter unit 54 is vertically fastened, from a bottom of the chamber 10, to an opening 114 formed in a bottom wall (base) 10a of the chamber 10 to be adjacent to a cylindrical conductive cover 42 that surrounds a power feed rod 40. The casing 110 is physically or electrically coupled to the bottom wall 10a of the chamber 10.

Abstract: Embodiments of the present invention include a focus ring segment and a focus ring assembly. In one embodiment, the focus ring segment includes an arc-shaped body having a lower ring segment, a middle ring segment, a top ring segment and a lip. The lower ring segment has a bottom surface, and the middle ring segment has a bottom surface, wherein the middle ring segment is connected to the lower ring segment at the middle ring segment bottom surface. The top ring segment has a bottom surface, wherein the top ring segment is connected to the middle ring segment at the top ring segment bottom surface. The lip extends horizontally above the middle ring segment, wherein the lip is sloped radially inwards towards a centerline of the focus ring segment. In another embodiment, the focus ring assembly includes at least a first ring segment and a second ring segment.

Abstract: Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.

Abstract: An apparatus for depositing a material layer originating from process gas on a substrate wafer, contains: a reactor chamber delimited by an upper dome, a lower dome, and a side wall; a susceptor for holding the substrate wafer during the deposition of the material layer; a preheating ring surrounding the susceptor; a liner, on which the preheating ring is supported in a centered position wherein a gap having a uniform width is present between the preheating ring and the susceptor; and a spacer acting between the liner and the preheating ring, the spacer keeping the preheating ring in the centered position and providing a distance ? between the preheating ring and the liner.