Abstract: Disclosed herein are various designs for dielectric waveguides, as well as methods of manufacturing such waveguides. One type of dielectric waveguides described herein includes waveguides with one or more cavities in the dielectric waveguide material. Another type of dielectric waveguides described herein includes waveguides with a conductive ridge in the dielectric waveguide material. Dielectric waveguides described herein may be dispersion reduced dielectric waveguides, compared to conventional dielectric waveguides, and may be designed to adjust the difference in the group delay between the lower frequencies and the higher frequencies of a chosen bandwidth.

Abstract: Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.

Abstract: The present invention features a waveguide transition. A waveguide transition is used to join two dissimilar segments of waveguide, in this case coplanar waveguide to rectangular waveguide, and vice-versa. Care taken during the design of the waveguide transition ensures that the reflection of electromagnetic waves, which may be traveling along the coplanar waveguide segment and toward the waveguide transition and subsequent rectangular waveguide segment, is minimized.

Abstract: A transition structure for millimeter wave is provided. The transition structure includes a first layer signal element coupled to an end of a first transmission line and a plurality of first layer ground elements surrounding the end of the first transmission line equidistantly from the end of the first transmission line and disposed along two opposite sides of a strip body of the first transmission line equidistantly from the strip body of the first transmission line. The transition structure further includes an intermediate layer signal element coupled to the first layer signal element and a plurality of intermediate layer ground elements surrounding the intermediate layer signal element quasi-coaxially. A multilayer transition structure including a multilayer structure and the transition structure is also provided. Therefore, the problem of operating frequency caused by the thickness of the multilayer structure can be overcome, thereby increasing the resonance frequency of the multilayer structure.

Abstract: The present application relates to a method and apparatus for implementing a radar array including a gate bias source for providing a first variable voltage, a back gate well control for providing a second variable voltage, and a field effect transistor having a drain, a source, a gate and a back gate well control, the field effect transistor being further configured to couple an alternating current radar signal between the drain and the source and to adjust a phase of the alternating current radar in response to first variable voltage applied to the gate and the second variable voltage applied to the back gate well control.

Abstract: A microstrip-to-waveguide transition includes a substrate and a waveguide. The substrate has a metal layer, a ground layer and a dielectric layer disposed between the metal layer and a ground layer. The substrate includes a microstrip line impedance transformer and a substrate integrated waveguide that is electromagnetically coupled to the microstrip line impedance transformer. The substrate integrated waveguide has a 90 degree substrate integrated waveguide bend section at an end portion thereof. The waveguide is arranged perpendicularly relative to the substrate. The waveguide is electromagnetically coupled to the substrate integrated waveguide at the 90 degree substrate integrated waveguide bend section. The microstrip-to-waveguide transition is free of a back-short at a location corresponding to the 90 degree substrate integrated waveguide bend section.

Abstract: Disclosed is a chip-to-chip interface using a microstrip circuit and a dielectric waveguide. A board-to-board interconnection device, according to one embodiment of the present invention, comprises: a waveguide which has a metal cladding and transmits a signal from a transmitter-side board to a receiver-side board; and a microstrip circuit which is connected to the waveguide and has a microstrip-to-waveguide transition (MWT), wherein the microstrip circuit matches a microstrip line and the waveguide, adjusts the bandwidth of a predetermined first frequency band among the frequency bands of the signal, and provides same to the receiver.

Abstract: The objective of the invention is to provide a microwave tube, or the like, wherein gas adsorption action of a getter may be satisfactorily performed independently from a microwave amplification operation. In order to solve this problem, this microwave electron tube comprises: a helix wherein a microwave may progress oriented from an input section to an output section within a helical tube; an electron gun emitting an electron flow oriented toward the helix; a focusing device causing the electron flow to traverse the vicinity of the helix in the direction of a collector; the collector absorbing the electron flow; and a getter having a heater insulated from the cathode provided in the electron gun.

Abstract: A broadband transition coupling for transition between a waveguide and a printed circuit board with a substrate integrated waveguide is disclosed. The broadband transition coupling comprises a main body that encompasses an air-filled waveguide section and a transition section. The air-filled waveguide section comprises a first interface for the waveguide. The transition section provides a second interface for the printed circuit board. The transition section continuously tapers along the second interface in order to reduce a height of the transition section for transition coupling with the printed circuit board. Further, the present disclosure relates to a broadband system for processing electromagnetic signals.

Abstract: A liquid crystal phase shifter is disclosed. The liquid crystal phase shifter includes a liquid crystal cell, a partition plate, a first microstrip line, a second microstrip line and liquid crystal molecules. The liquid crystal cell includes a first substrate and a second substrate disposed opposite to each other; the partition plate is disposed between the first substrate and the second substrate; the first microstrip line is disposed on a surface of the partition plate away from the second substrate; the second microstrip line is disposed on a surface of the partition plate away from the first substrate; and the liquid crystal molecules are provided between the first substrate and the partition plate, and between the second substrate and the partition plate.

Abstract: Microelectronic assemblies that include a lithographically-defined substrate integrated waveguide (SIW) component, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate portion having a first face and an opposing second face; and an SIW component that may include a first conductive layer on the first face of the package substrate portion, a dielectric layer on the first conductive layer, a second conductive layer on the dielectric layer, and a first conductive sidewall and an opposing second conductive sidewall in the dielectric layer, wherein the first and second conductive sidewalls are continuous structures.

Abstract: An apparatus includes a substrate containing a cavity and a dielectric structure covering at least a portion of the cavity. The cavity is hermetically sealed. The apparatus also may include a launch structure formed on the dielectric structure and outside the hermetically sealed cavity. The launch structure is configured to cause radio frequency (RF) energy flowing in a first direction to enter the hermetically sealed cavity through the dielectric structure in a direction orthogonal to the first direction.

Abstract: An assembly includes a first waveguide and a second waveguide extending longitudinally along a first axis, each having an end, each comprising a first annular groove, the two ends being contiguous along the first axis, and an assembly device for assembling the first waveguide and the second waveguide, wherein the assembly device comprises a sleeve surrounding the ends of the first and second waveguides and having an inner wall comprising two first annular grooves facing the first annular grooves of the first and second waveguides, two reversibly deformable waveguides, each being positioned in a first annular groove of the sleeve and positioned in a first annular groove of the first and second waveguides, so as to block the first and second waveguides in terms of translation along the first axis.

Abstract: A semiconductor device includes a first transmission line and a second transmission line. The semiconductor device further includes a high-k dielectric material between the first transmission line and the second transmission line, wherein the high-k dielectric material surrounds the second transmission line. The semiconductor device further includes a dielectric material directly contacting the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material, and the dielectric material is separated from the first transmission line and the second transmission line.

Abstract: A signal transmission line includes a laminate, a signal conductor, a hollow portion, and a reinforcing conductor. The laminate includes a flexible laminate including resin layers each of which has flexibility. The signal conductor extends in a signal transmission direction of the laminate and is disposed in an intermediate position in a laminating direction of the resin layers. The hollow portion is in the laminate and defined by an opening provided at a portion of the plurality of resin layers. The reinforcing conductor is in the laminate. The hollow portion is disposed at a position overlapping with the signal conductor, in a plan view of the laminate from a surface perpendicular or substantially perpendicular to the laminating direction. The reinforcing conductor is disposed at a position different from the position of the hollow portion in a plan view.

Abstract: A feed line to waveguide lateral transition is described consisting of: a proximity coupled antenna element on the top surface of a composite RF board, an embedded microstrip or stripline feed line, a ground plane on the bottom surface of the RF board, and a waveguide with an aperture enclosing the antenna element with a signal propagation through the waveguide being perpendicular to the antenna element.

Abstract: A transmission line device includes a first multilayer substrate with a transmission line including laminated insulating base materials and a conductor pattern on the insulating base materials, and a second multilayer substrate defining a connected member to which the transmission line of the first multilayer substrate is connected. The conductor pattern includes a signal conductor pattern and a signal electrode pad electrically connected to the signal conductor pattern. The first multilayer substrate includes a resist film provided on a surface of a laminate of the insulating base materials, and the resist film includes an opening that is separated from an outer edge of the signal electrode pad in a surface direction of the laminate of the insulating base material and exposes the signal electrode pad.

Abstract: An invention comprises: a circular waveguide that has a cylindrical section having a circular pipe conduit with a circular shaped cross section, and side wall sections joined to the both sides in an axial direction of the cylindrical section; a first rectangular waveguide that has a first rectangular pipe conduit with a rectangular shaped cross section and that is joined to one of the side wall sections so that the first rectangular pipe conduit communicates with the circular pipe conduit; a second rectangular waveguide that has a second rectangular pipe conduit with a rectangular shaped cross section and that is joined to the other of the side wall sections so that the second rectangular pipe conduit communicates with the circular pipe conduit; and a dielectric plate that is configured as a plate shape, is disposed in the circular pipe conduit, and is airtightly held to the cylindrical section, wherein the circular waveguide has a plastically deformable section that is plastically deformable so that at least

Abstract: The suprastructure over a substrate integrated waveguide (SIW) can provide for beam scanning utilizing a reconfigurable metasurface. The reconfigurable metasurface will have a plurality of PIN diode arrays that can be turned ON and OFF. In one design, the length of the reconfigurable metasurface is effectively enlarged or reduced in size to achieve beam scanning. In another design the tilt angle of the reconfigurable metasurface is adjusted to achieve beam scanning. The suprastructure also can be modified with metallic offset wings, where two or more pairs of offset wing can form a horn shaped element. The presence of the wings or horn, as well as control of the size and number of the wings can improve the gain of the SIW. These two suprastructure improvements may be used in combination, and they may be used over classical slotted SIWs or over an SIW with curved sections between consecutive slots.

Abstract: A photonic integrated circuit is disclosed comprising: a dielectric substrate (110); a dielectric waveguide arrangement (120) on the substrate (110) for guiding terahertz (THz) waves; and a local functionalization (130) having a metallization in a surface area of the dielectric waveguide arrangement (120). The metallization is localized along a propagation direction of the THz waves to allow a metallization-free propagation of the THz wave outside of the local functionalization.