Abstract: The invention relates to a method of cleaning and/or sterilization of an object provided in a hermetically sealed enclosure, providing a pressure difference between an internal volume of the enclosure and surroundings and generating a plasma solely inside the enclosure for said cleaning and/or sterilization of the object. The invention further relates to an apparatus for enabling the same. The apparatus 10 comprises a vacuum chamber 1, which can be evacuated using a vacuum pump 2, and a source 3 arranged to generate plasma of a suitable gas in an enclosure 8, which is substantially hermetically closed with respect to the atmosphere of the vacuum chamber. The enclosure 8 may be of a flexible type or may be manufactured from a rigid material. In case when the enclosure is rigid the pressure inside the enclosure may be lower than an outside pressure.

Abstract: A fill protection algorithm for determining whether the water level in a dishwasher is sufficient to enable operation of the wash pump of the dishwasher without burn-out or other damage to the wash pump and/or heating element of the dishwasher due to insufficient water level. A change in water temperature TEMPDELTA is detected and is compared to a predetermined water temperature change level or amount, TEMPMIN—DELTA, and if the detected change in water temperature TEMPMIN—DELTA is greater than or equal to the minimum water temperature change TEMPMIN—DELTA, operation of the dishwasher is allowed to proceed.

Abstract: A process for surface preparation of a substrate (2), which comprises introducing or running a substrate (2) into a reaction chamber (6, 106). A dielectric barrier (14, 114) is placed between electrodes (1, 10, 110). A high-frequency electrical voltage is generated, to generate filamentary plasma (12, 112). Molecules (8, 108) are introduced into the reaction chamber (6, 106). Upon contact with the plasma, they generate active species typical of reacting with the surface of the substrate. An adjustable inductor (L) placed in parallel with the inductor of the installation is employed to reduce the phase shift between the voltage and the current generated and to increase the time during which the current flows in the plasma (12, 112).

Abstract: Disclosed is a supercritical processing apparatus and a supercritical processing method for suppressing the pattern collapse or the injection of material constituting a processing liquid into a substrate. A processing chamber receives a substrate subjected to a processing with supercritical fluid, and a liquid supply unit supplies a processing liquid including a fluorine compound to the processing chamber. A liquid discharge unit discharges the supercritical fluid from the processing chamber, a pyrolysis ingredient removing unit removes an ingredient facilitating the pyrolysis of a liquid from the processing chamber or from the liquid supplied from the liquid supply unit, and a to heating unit heats the processing liquid including a fluorine compound of hydrofluoro ether or hydrofluoro carbon.

Abstract: An apparatus for cleaning the surface of a base, comprising: a base; a plurality of apertures flush with the surface of said base, said apertures being connected to a plurality of sub-channels and wherein said apertures are adapted to expel air; at least one air chamber operatively connected with said plurality of sub-channels; a main channel connected with said at least one air chamber; wherein said main channel is supplied from an air compressor; and a main valve located between said at least one air chamber and said main channel, wherein said main valve regulates the air flow from said main channel to said at least one air chamber, said valve being further adapted to close said main channel.

Abstract: Exemplary surface debris removal systems and methods are operable to remove debris from a signal transmitting/receiving surface. An embodiment provides power to, and then removes power from, a conductive memory wire that is secured to a moveable portion of a two-position snap spring. In response to providing the power to the conductive memory wire, a length of the conductive memory wire decreases so that the moveable portion of the two-position snap spring is pulled from an extended position to a retracted position. When power is removed from the conductive memory wire, the moveable portion of the two-position snap spring moves from the retracted position to the extended position. In response to the moving of the moveable portion of the two-position snap spring from the retracted position to the extended position, an energy is generated and transferred to the surface that dislodges the debris from the surface.

Abstract: A broom comprises a head supporting bristles. A handle is connected to the head at a swivel joint where the swivel joint allows the handle to feely rotate relative to the head. A lock is movable to a locked position to fix the position of the handle relative to the head when the head is in a first position relative to the handle and an unlocked position where the head is free to rotate relative to the handle. A method of operating a broom comprises providing a head supporting bristles connected to a handle at a lockable swivel joint; locking the lockable swivel joint to fix the position of the handle relative to the head in a first position; and unlocking the lockable swivel joint to allow the handle to rotate relative to the head.

Abstract: An apparatus and method for picking up stickers in grassy or other ground areas. A roller is rotatably mounted on a frame and a stretchable fabric is removably mounted and stretched on an outer surface of the roller. The fabric is of a construction and thickness to pick up stickers as the roller is moved by the frame and rotated in engagement with a grassy or other ground surface. When the fabric is full of stickers, it is removed from the roller and replaced with a new unused stretchable fabric that is removably mounted on the roller.

Abstract: A conveyor dishwasher (2) has a control apparatus (50) for automatically setting the quantity of final rinse liquid sprayed in the final rinse zone (18) per unit time as a function of the conveying speed and/or as a function of the type of washware conveyed through the final rinse zone (18). A rinse aid metering apparatus (57) is also provided which is designed to add in a metered fashion a constant quantity of rinse aid per unit time to the fresh water provided for final rinsing purposes independently of the quantity of final rinse liquid sprayed in the final rinse zone (18) per unit time.

Abstract: A composition is provided for lowering a pH of a drilling fluid. The composition includes HCl, urea, complex substituted keto-amine-hydrochloride, an alcohol, an ethoxylate, and a ketone. A method of using the composition includes adding the composition to a drilling fluid for a well to assist in lowering a pH thereof. Methods are also provided for performing hydraulic fracturing of an oil or a gas well, for adjusting a pH of a drilling fluid, for adjusting and maintaining a pH of a process fluid, for solubilizing calcium carbonate in an aqueous suspension or dispersion of calcium carbonate, for removing a foulant in a fluid-handling element, and for adjusting a pH and lowering a salt level of turf.

Abstract: Provided is a method and apparatus for cleaning a photomask. The photomask including a first region and a second region surrounding the first region, a pattern to be protected disposed on the first region, and a material to be removed exists on the second region. A cleaning liquid is sprayed from an inside region of the second region toward an outer region of the second region to remove the material, and a gas is blown from the first region toward the second region to protect the pattern.

Abstract: The invention relates to a method for removing at least part of at least one layer of a composite coating that is formed of fibers and at least one resin that is present on the surface of the body of a gas cartridge. In said method, at least one liquid nitrogen stream is dispensed at a temperature less than ?100 DEG C at a pressure of at least 00 bars upon contact with said coating so as to remove at least part of said coating layer present on the body of the gas cartridge.

Abstract: A tool for cleaning a personal care applicator, particularly an applicator for a product that is subject to dry out. In some embodiments, the invention is implemented as a reusable cleaning tool. In other embodiments, the invention is implemented as a disposable, single-use or limited use cleaning tool. The tool comprises a relatively flat body having first and second exterior surfaces, and one or more cleaning regions that extend through the body. As an applicator is drawn through the cleaning region, dried out product is scraped off the applicator.

Abstract: A method for cleaning the surface of a silicon substrate, covered by a layer of silicon oxide includes: a) exposing the surface for 60 to 900 seconds to a radiofrequency plasma, generated from a fluorinated gas, to strip the silicon oxide layer and induce the adsorption of fluorinated elements on the substrate surface, the power density generated using the plasma being 10 mW/cm2 to 350 mW/cm2, the fluorinated gas pressure being 10 mTorrs to 200 mTorrs, and the substrate temperature being lower than or equal to 300° C.; and b) exposing the surface including the fluorinated elements for 5 to 120 seconds to a hydrogen radiofrequency plasma, to remove the fluorinated elements from the substrate surface, the power density generated using the plasma being 10 mW/cm2 to 350 mW/cm2, the hydrogen pressure being 10 mTorrs to 1 Torr, and the substrate temperature being lower than or equal to 300° C.

Abstract: A vacuum processing apparatus includes a vacuum chamber for performing a plasma process and a cleaning process unit for performing a cleaning process to apply a plasma process to a wafer on which a single layer or a laminated film containing a metallic film is formed by using a corrosive gas, and a control unit having a sequence to abort the plasma process when an abnormality occurs in the vacuum chamber and transfer the wafer subjecting to the aborting of the plasma process to the cleaning process unit, after elapsing a predetermined time, to perform the cleaning process.

Abstract: A system for cleaning and maintaining a vault includes a vault that may have equipment submerged in water. The vault includes a floor, at least one wall, and a cover that collectively define a vault interior. In some versions there is contaminated water in the vault that is at least one foot above the lowest point on the vault floor. In some versions, the water may be 12 to 14 feet above the lowest point on the floor. A portion of the floor may slope toward a vacuum head that is indirectly coupled with a source of suction. In some versions, at least the vault floor is lined with a liner that has a low coefficient of friction and is corrosive resistant. The source of suction may be a vacuum hose of a vacuum truck.

Abstract: A method for cleaning a semiconductor wafer composed of silicon directly after a process of chemical mechanical polishing of the semiconductor wafer includes transferring the semiconductor wafer from a polishing plate to a first cleaning module and spraying both side surfaces of the semiconductor wafer with water at a pressure no greater than 1000 Pa at least once while transferring the semiconductor wafer. The semiconductor wafer is then cleaned between rotating rollers with water. The side surfaces of the semiconductor wafer are sprayed with an aqueous solution containing hydrogen fluoride and a surfactant at a pressure no greater than 70,000 Pa. Subsequently, the side surfaces are sprayed with water at a pressure no greater than 20,000 Pa. The wafer is then dipped into an aqueous alkaline cleaning solution, and then cleaned between rotating rollers with a supply of water. The semiconductor wafer is then sprayed with water and dried.

Abstract: According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

Abstract: A process is provided for removing polymeric fouling on process equipment surfaces to restore the efficiency of such equipment. This is accomplished by contacting the fouled equipment with a solvent comprising at least one non-aromatic hydrocarbon compound, or a mixture of one or more non-aromatic organic compounds and one or more aromatic hydrocarbon compounds, for a period of time sufficient to remove the polymeric fouling.

Abstract: A method and apparatus for providing multiple spray zones to different subportions of a silverware basket within the wash chamber of a dishwasher.