Abstract: The present disclosure describes a method for improving post-photolithography critical dimension (CD) uniformity for features printed on a photoresist. A layer can be formed on one or more printed features and subsequently etched to improve overall CD uniformity across the features. For example the method includes a material layer disposed over a substrate and a photoresist over the material layer. The photoresist is patterned to form a first feature with a first critical dimension (CD) and a second feature with a second CD that is larger than the first CD. Further, a layer is formed with one or more deposition/etch cycles in the second feature to form a modified second CD that is nominally equal to the first CD.

Abstract: According to an exemplary embodiment, a method includes preparing a workpiece including a silicon film and a mask provided on the silicon film, etching the silicon film using the mask by plasma of a gas containing a first halogen atom, modifying a surface of the silicon film into an oxide layer by plasma of a gas containing an oxygen atom, a hydrogen atom, and a second halogen atom, the oxide layer including a first region extending along a side wall surface of the mask and a second region extending on the silicon film, etching the oxide layer to remove the second region while leaving the first region, and etching the silicon film using the mask and the oxide layer including the first region by plasma of a gas containing a third halogen atom.

Abstract: There is provided an etching method including: a first gas supply step of supplying a reducing gas to a workpiece having a metal film formed thereon to reduce a front surface of the metal film, the workpiece being accommodated in at least one processing chamber; and subsequently, a second gas supply step of supplying an oxidizing gas for oxidizing the metal film and an etching gas composed of a ?-diketone to etch the oxidized metal film.

Abstract: Aspects of the disclosure include systems and methods for removing a sample from a carrier material and depositing the sample onto a substrate. The sample can be placed in an aperture of a substrate guide on a stage within a cavity. Etching fluid can be introduced into the cavity to etch the carrier material from the sample and then drained. A rinsing material can be introduced into the cavity to rinse the etching fluid and then drained. A sample deposition process can be performed wherein rinsing fluid is introduced into the cavity to raise the sample guide and sample above the level of a substrate on a substrate holder. The substrate holder can be positioned relative to the sample guide so that the sample within the aperture aligns with the substrate on the substrate holder. The rinsing fluid is drained so that the sample is lowered onto the substrate.

Abstract: Plasma ion energy distribution for ions having different masses is controlled by controlling the relationship between a base RF frequency and a harmonic RF frequency. By the controlling the RF power frequencies, characteristics of the plasma process may be changed based on ion mass. The ions that dominate etching may be selectively based upon whether an ion is lighter or heavier than other ions. Similarly, atomic layer etch processes may be controlled such that the process may be switched between a layer modification step and a layer etch step though adjustment of the RF frequencies. Such switching is capable of being performed within the same gas phase of the plasma process. The control of the RF power includes controlling the phase difference and/or amplitude ratios between a base RF frequency and a harmonic frequency based upon the detection of one or more electrical characteristics within the plasma apparatus.

Abstract: The reactive ion etching apparatus of this invention has a stage provided with an electrostatic chuck having a pair of electrodes. At the time of etching a to-be-processed substrate, by applying DC voltage to the pair of electrodes, the to-be-processed substrate is electrostatically absorbed to the electrostatic chuck. In this reactive ion etching apparatus, a radio-frequency power source connected to the stage, through a first output line, applies bias potential to the to-be-processed substrate. The radio-frequency power source is also arranged to be connected through a second output line to the pair of electrodes so as to apply radio-frequency potential in a manner to be superposed on the DC voltage. The first capacitor and the second capacitor are respectively interposed in the first output line and the second output line. A capacitance ratio of the first capacitor to the second capacitor is set to a range of 2.5 to 25.

Abstract: A near-field transducer or heat sink is formed via a first process. The near-field transducer or heat sink is transfer-printed to a read/write head via a second process.

Abstract: A processing system monitors and/or controls a surface modification process occurring on a substrate within a processing chamber. An optical processing module having a light emission submodule to output a generated light signal and an optical detection submodule to detect a resultant light signal, is connected via fiber optic cables to light illuminating and light receiving components located within the chamber. A processor determines an amount of atomic absorption by an atomic element encountered by a probing beam passing between the illuminating and receiving components, based on the intensity of the generated light signal, the intensity of the received light signal and optionally the spontaneous emission of the atomic element in the absence of illumination by a probing beam. Based on the determined amount, the system derives a plurality of parameters of the modified substrate, their spatial and temporal uniformity, and information about process conditions in the processing chamber.

Abstract: The plasma processing apparatus according to an exemplary embodiment includes a chamber, a radio-frequency power supply, and a correction signal generator. The radio-frequency power supply outputs a pulsed radio-frequency power in a first period. The radio-frequency power supply outputs a pulsed radio-frequency power in one or more second periods after the first period. The correction signal generator generates a correction signal that oscillates in a reverse phase with respect to a reflected wave monitor signal in the first period. The radio-frequency power supply generates a combined radio-frequency power using the correction signal. The power supply is configured to alternately repeat output of the pulsed radio-frequency power in the first period and output of the combined radio-frequency power in the one or more second periods.

Abstract: A method of removing a hard mask is provided. Gate stacks are patterned on a substrate, where the gate stacks include a polysilicon layer and the hard mask deposited over the polysilicon layer. A dielectric layer is deposited on the substrate and on the patterned gate stacks. A first portion of the dielectric layer is planarized by chemical mechanical polishing (CMP) to remove a topography of the dielectric layer. The hard mask and a second portion of the dielectric layer are removed by the CMP.

Abstract: A touch panel manufacturing method, a touch panel and a display device are provided, and the method includes: forming a black frame on a substrate; forming a removable adhesive layer in a display region of the substrate having the black frame; forming a metal layer on the black frame and the removable adhesive layer; removing the removable adhesive layer in the display region and a first part of the metal layer located in the display region; performing photolithography on the substrate where the removable adhesive layer and first part of the metal layer have been removed, thus producing a touch panel.

Abstract: A polishing slurry includes a carbon polishing particle and an exothermic material.

Abstract: A method for etching a substrate includes performing, in a plasma chamber, a first etch of a substrate material using a plasma etch process. The first etch forms features to a first depth in the material. Following the first etch, the method includes performing, in the plasma chamber without removing the substrate from the chamber, an atomic layer passivation (ALP) process to deposit a conformal film of passivation over the mask and the features formed during the first etch. The ALP process uses a vapor from a liquid precursor to form passivation over the features and the mask. The method further includes performing, in the plasma chamber, a second etch of the material using the plasma etch process. The conformal film of passivation is configured to protect the mask and sidewalls of the features during the second etch. A plasma processing system also is described.

Abstract: An etching method is provided. The etching method is performed on a substrate having a first film to a third film. The third film is provided on an underlying region, the second film is provided on the third film, the first film is provided on the second film. The second film contains silicon and nitrogen. The first film to the third film are etched in sequence. Plasma of a processing gas containing fluorine and hydrogen is used in the etching of the first film to the third film. A temperature of the substrate is set to be equal to or less than 20° C. at least in the etching of the second film.

Abstract: Disclosed is a method of cleaning a substrate processing apparatus in which a substrate having a surface wet by a liquid is brought into contact with a supercritical fluid so as to perform a drying process of drying the substrate. The method includes a cleaning gas filling process and an exhausting process. The cleaning gas filling process fills a cleaning gas containing isopropyl alcohol in the substrate processing apparatus. The exhausting process exhausts the cleaning gas from an inside of the substrate processing apparatus after the cleaning gas filling process.

Abstract: A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including a metal. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the metal. It is preferred that the base material further includes a second region comprising substantially only a non-metal, and the method further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film. The metal is preferably a constituent of a metal substance, an alloy, an oxide, an electrically conductive nitride or a silicide.

Abstract: Methods, apparatuses, and systems related to selectively depositing a liner material on a sidewall of an opening are described. An example method includes forming a liner material on a dielectric material of sidewalls of an opening and a bottom surface of an opening and removing the first liner material of the sidewalls of the opening and the bottom surface of the opening using a non-selective etch chemistry. The example method further includes forming a second liner material on the dielectric material of the sidewalls of the opening to avoid contact with the bottom surface of the opening.

Abstract: The present invention provides a process and structure of microfabricated air bridges for planar microwave resonator circuits. In an embodiment, the invention includes depositing a superconducting film on a surface of a base material, where the superconducting film is formed with a compressive stress, where the compressive stress is higher than a critical buckling stress of a defined structure, etching an exposed area of the superconducting film, thereby creating the at least one bridge, etching the base material, thereby forming a gap between the at least one bridge and the base material, depositing the at least one metal line on at least part of the superconducting film and at least part of the base material, where the at least one metal line runs under the bridge.

Abstract: A method for uniformly distributing a process liquid within a process vessel includes providing a process liquid to a fouling-resistant liquid distributor installed within a process vessel having a cross-sectional area; causing rotational movement of the fouling-resistant liquid distributor; uniformly distributing the process liquid over the cross-sectional area within the process vessel; and simultaneously self-rinsing the fouling-resistant liquid distributor with a portion of the process liquid during uniform distribution. A system is also disclosed which includes a supply of process fluid, a stationary conduit and a liquid distribution head attached to the conduit. The liquid distribution head is motive, powered by a fluid, and includes at least one process liquid delivery port. The at least one process liquid delivery port is configured to provide a +10° or greater angle of liquid coverage when the liquid distribution head is moving.

Abstract: There is provided a master, an optical body, and a master manufacturing method, including: forming, on a surface of a master body that includes a base material, a periodic micro concave-convex structure in which an average cycle of concavities and convexities is less than or equal to visible light wavelengths; forming an inorganic resist layer on the surface of the master body; microparticulating and spraying an organic resist dissolved in a diluent onto the inorganic resist layer, to thereby form an organic resist layer, on a surface of which is provided a macro concave-convex structure in which the average cycle of concavities and convexities is greater than the visible light wavelengths; and etching the organic resist layer, the inorganic resist layer, and the master body, to thereby superimpose and uniformly form the micro concave-convex structure and the macro concave-convex structure on the surface of the base material.