Abstract: A plasma processing apparatus including a processing state detection unit having: a light emission detection unit to detect light emission of the plasma; a calculation unit to obtain a differential waveform data of the light emission of the plasma; a database unit that stores a plurality of pieces of differential waveform pattern data in advance; a film thickness calculation unit to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit; and an end point determination unit to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.

Abstract: A notch treatment method for flaw simulation including providing the specimen with the notch, the notch having a re-melt material layer; isolating the notch; and selectively etching the notch to provide an etched surface of the notch; wherein at least a portion of the re-melt material layer has been removed from the notch. In one aspect, there is provided a notch treatment method for flaw simulation including providing the specimen with the notch, the notch having a re-melt material layer, the specimen includes steel or an alloy thereof; isolating the notch; and selectively etching the notch with a first etching solution and a second etching solution to provide an etched surface on the notch; wherein at least a portion of the re-melt material layer has been removed from the notch.

Abstract: A laminated structure for use in retrofit building construction (partition, wall, ceiling, floor or door) that exhibits improved acoustical sound proofing characteristics while being optimized for efficient installation. The laminated structure includes a panel with at least one layer of viscoelastic glue, or fire-10 resistant, viscoelastic glue, which functions both as a glue and an energy dissipating layer. In one embodiment, the laminated structure to be attached to an existing wall in some embodiments includes standard paper-faced gypsum board. In another embodiment the to-be-applied laminated structure includes a cement-based board, and in yet another embodiment the to-be-applied laminated 15 structure includes a cellulose-based board. Once the laminated structure is installed on an existing wall or other partition, the resulting structure greatly attenuates transmitted noise and minimizes the labor required for installation and finishing.

Abstract: The present disclosure provides a semiconductor structure and a forming method thereof. One form of a forming method includes: providing a base; forming a plurality of discrete mandrel layers on the base, where an extending direction of the mandrel layers is a first direction, and a direction perpendicular to the first direction is a second direction; forming a plurality of spacer layers covering side walls of the mandrel layers; forming a pattern transfer layer on the base, where the pattern transfer layer covers side walls of the spacer layers; forming a first trench in the pattern transfer layer between adjacent spacer layers in the second direction; removing a mandrel layer to form a second trench after the first trench is formed; and etching the base along the first trench and the second trench to form a target pattern by using the pattern transfer layer and the spacer layer as a mask. In the present disclosure, the accuracy of the pattern transfer is improved.

Abstract: The present application relates to a method of laser ablation of a metal-ceramic substrate, in which a laser is used under process conditions in which the formation of solid metal particles on the metal-ceramic substrate, which can separate from metal particles released by laser ablation near the ablation edge, is essentially avoided. Further the present application relates to a ceramic-metal substrate comprising a ceramic substrate and a metallization on at least one side of the ceramic substrate, wherein the ceramic substrate and the metallization have flush cutting edge.

Abstract: Disclosed are apparatuses and methods for performing atomic layer etching. A method may include supporting and thermally floating a substrate in a processing chamber, modifying one or more surface layers of material on the substrate by chemical adsorption, without using a plasma, while the substrate is maintained at a first temperature, and removing the one or more modified surface layers by desorption, without using a plasma, while the substrate is maintained at a second temperature, the first temperature being different than the second temperature. An apparatus may include a processing chamber and support features configured to support and thermally float a substrate in the chamber, a process gas unit configured to flow a first process gas onto the substrate, a substrate heating unit configured to heat the substrate, and a substrate cooling unit configured to actively cool the substrate.

Abstract: A method for producing microstructures includes introducing modifications by a laser beam into a volume between two opposite outer surfaces of a glass substrate. An etching method is carried out which provides anisotropic material removal in one of the outer surfaces so as to produce recesses that have a conical shape. A layer that is resistant to an etching effect of the etching method is applied as a cover layer to only one outer surface. Then, a further etching method is carried out so that material is removed in the other outer surface until recesses of this other outer surface, which are produced and/or enlarged by the further etching method, have reached the cover layer.

Abstract: Provided is a dielectric material composition and related methods. The method includes patterning a substrate to include a first feature, a second feature adjacent to the first feature, and a trench disposed between the first and second features. The method further includes depositing a dielectric material over the first feature and within the trench. In some embodiments, the depositing the dielectric material includes flowing a first precursor, a second precursor, and a reactant gas into a process chamber. Further, while flowing the first precursor, the second precursor, and the reactant gas into the process chamber, a plasma is formed within the process chamber to deposit the dielectric material.

Abstract: A method for manufacturing a pillar supply sheet is a method for manufacturing a pillar supply sheet including a plurality of pillars, a carrier sheet, and an adhesion layer between each of the pillars and the carrier sheet, the method including a pillar forming step. The pillar forming step is a step of forming the plurality of pillars by subjecting the base member to an etching process or a laser irradiation process and removing an unnecessary portion from the base member after the process.

Abstract: Systems and methods for rinsing beverage residue from a mechanical interface between threads of a bottle and threads of a bottle cap is described. The bottle cap may include a sealable coating to create a seal against a rim of the bottle. The bottle cap may also include passages to allow pressurized water to be injected into an upper inner region of the bottle cap. The pressurized water is prevented from entering the bottle due to the seal between the rim of the bottle and the sealable coating of the bottle cap. Therefore, the pressurized water is caused to escape through the mechanical thread interface toward a lower inner region of the bottle cap where the water escapes from the cap at atmospheric pressure.

Abstract: In an apparatus for plasma processing according to an exemplary embodiment, a radio frequency power source generates radio frequency power which is supplied for generation of a plasma. A bias power source supplies bias power to a lower electrode of a substrate support. The bias power varies a potential of a substrate within a cycle thereof. The radio frequency power is supplied in at least a part of a first period in the cycle, in which the potential of the substrate is relatively high. A power level of the radio frequency power is lowered in a second period in the cycle, in which the potential of the substrate is relatively low. In the first period and the second period, the sheath adjuster adjusts a position in a vertical direction of an upper end of a sheath above an edge ring.

Abstract: Methods for forming holes in a substrate by reducing back reflections of a quasi-non-diffracting beam into the substrate are described herein. In some embodiments, a method of processing a substrate having a first surface and a second surface includes applying an exit material to the second surface of the substrate, wherein a difference between a refractive index of the exit material and a refractive index of the substrate is 0.4 or less, and focusing a pulsed laser beam into a quasi-non-diffracting beam directed into the substrate such that the quasi-non-diffracting beam enters the substrate through the first surface. The substrate is transparent to at least one wavelength of the pulsed laser beam. The quasi-non-diffracting beam generates an induced absorption within the substrate that produces a damage track within the substrate.

Abstract: A polishing liquid is provided containing manganese oxide abrasive grains, permanganate ions, and a cellulosic surfactant or a cationic surfactant. The polishing liquid has a pH of 5 or more and 11 or less. The cellulosic surfactant is preferably a carboxymethyl cellulose or a derivative thereof. The cationic surfactant preferably has a quaternary ammonium ion site. The content of the cellulosic surfactant or the cationic surfactant is preferably 0.01 mass % or more and 1.0 mass % or less based on the total amount of the polishing liquid.

Abstract: A pad for chemical mechanical planarization comprises a material having a major surface, and asperities extending from the major surface, a ratio between a length and a width of each of the asperities greater than about 2:1, and an included angle between a leading surface of at least some asperities and the major surface greater than about 90°. Related pads, tools for chemical mechanical planarization, and related methods are also disclosed.

Abstract: There is provided an etching method, including: loading a substrate having a metallic film formed on the substrate into a processing container; and subsequently, oxidizing and etching the metallic film by setting an internal pressure of the processing container to a pressure higher than 2.40×104 Pa and supplying an oxidizing gas for oxidizing the metallic film and an etching gas comprising ?-diketone into the processing container.

Abstract: Provided are a hole forming method and a hole forming apparatus capable of stably forming a single nanopore on a membrane. This hole forming method is a hole forming method for forming a hole in a film and includes: a first step of applying a first voltage between a first electrode and a second electrode, installed so as to sandwich the film provided in an electrolyte, and stopping the application of the first voltage when a current flowing between the first electrode and the second electrode reaches a first threshold current so as to form a thin film portion in a part of the film; and a second step of applying a second voltage between the first electrode and the second electrode after the first step so as to form a nanopore in the thin film portion.

Abstract: Methods of producing grating materials with variable height are provided. In one example, a method may include providing a grating material atop a substrate, and positioning a shadow mask between the grating material and an ion source, wherein the shadow mask is separated from the grating material by a distance. The method may further include etching the grating material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the grating material is different than a second depth of a second portion of the grating material.

Abstract: A plasma ignition circuit includes a transformer having a primary coil configured to couple an RF power supply. A first secondary coil is configured to couple a remote plasma source (RPS), and a second secondary coil. The plasma ignition circuit further includes a control switch having an input configured to couple the second secondary coil and an output configured to capacitively couple the RPS and a switch controller. The switch controller is configured to upon sensing a secondary RF voltage applied to the second secondary coil in response to an RF voltage applied by RF power supply to the primary coil, enable the control switch to capacitively apply the secondary RF voltage to the RPS to ignite a plasma within the RPS. Upon sensing a drop in plasma impedance when the plasma is ignited, disable the control switch to discontinue applying the secondary RF voltage to the RPS.

Abstract: Provided therefore herein is a novel acidic fluoride activated cleaning chemistry. The present invention includes novel acidic fluoride activated, unique organic-solvent based microelectronic selective etchant/cleaner compositions with high metal nitride etch and broad excellent compatibility, including tungsten (W) and low-k. It does not use W-incompatible oxidizers, such as hydrogen peroxide or particle-generating corrosion inhibitors.

Abstract: A mask repairing apparatus may include a stage, a stereoscopic imaging unit to measure a stereoscopic image of a mask on the stage, a control unit to compare the stereoscopic image with a normal image of the mask and to produce a defect image of the mask, and a laser unit to irradiate a laser beam onto a deficient part of the mask, under control of the control unit. The control unit may control the laser unit, based on the defect image, such that the laser beam is sequentially irradiated onto m multiple layers of the deficient part while repeatedly moving in a first direction and a second direction crossing each other.