Abstract: A method performed by a film deposition apparatus including a process chamber and a rotary table that is disposed in the process chamber and includes a substrate-mounting surface on which a substrate is placeable. The method includes a first cleaning process of supplying a cleaning gas from above the substrate-mounting surface of the rotary table while rotating the rotary table in a first cleaning position, and a second cleaning process of supplying the cleaning gas from above the substrate-mounting surface of the rotary table while rotating the rotary table in a second cleaning position that is lower than the first cleaning position.

Abstract: A treating liquid vaporizing apparatus includes a buffer tank for storing a treating liquid, a vaporizing container connected to the buffer tank for vaporizing the treating liquid, a further vaporizing container connected to the buffer tank in parallel with the vaporizing container for vaporizing the treating liquid, a switch valve for opening and closing a flow path of the treating liquid between the buffer tank and the vaporizing container, and a switch valve for opening and closing a flow path of the treating liquid between the buffer tank and the further vaporizing container.

Abstract: Methods of forming a lanthanide-containing film comprising exposing a substrate surface to a lanthanide-containing precursor, a metal halide and a nitrogen precursor are described. The lanthanide-containing precursor has the general formula (CpRx)2Ln(N,N-dialkylamidinate) where Cp is a cyclopentadienyl or 6, 7 or 8 membered ring, R is H, C1-C4 alkyl, x=1 to number of C in Cp, alkyl is C1 to C4 alkyl. The metal halide deposits metal halide on the substrate surface and reacts with lanthanide-containing species to convert the lanthanide-containing species to a lanthanide halide. The nitrogen-containing precursor forms a lanthanide-metal-nitride film on the substrate surface.

Abstract: Methods for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.

Abstract: A device for atomic layer deposition includes: a film deposition chamber; a stage installed inside the film deposition chamber; a susceptor that holds, on the stage, a substrate; a mask disposed on the substrate, the mask being sized to encompass the substrate; a mask pin that supports the mask; and a mask pin hole bored through the stage and the susceptor vertically, and allows the mask pin to be inserted in a vertically movable manner, wherein the susceptor has a susceptor body having a holding surface of the substrate, and a susceptor peripheral edge located around the susceptor body and having a height lower than the holding surface, the mask pin hole is opened in the susceptor peripheral edge, and in the susceptor peripheral edge, an inert gas supply port that releases gas upward is provided around the holding surface in a surrounding area of the mask.

Abstract: Protective coatings on an aerospace component and methods for depositing the protective coatings are provided. A method for depositing a coating on an aerospace component includes exposing an aerospace component to a first precursor and a first reactant to form a first deposited layer on a surface of the aerospace component by a chemical vapor deposition (CVD) process or a first atomic layer deposition (ALD) process and exposing the aerospace component to a second precursor and a second reactant to form a second deposited layer on the first deposited layer by a second ALD process, where the first deposited layer and the second deposited layer have different compositions from each other.

Abstract: Provided are a tungsten precursor compound to which a substituent is bonded so as to obtain thermal stability and a method of forming a tungsten-containing film using the precursor.

Abstract: A method that includes performing an atomic layer deposition sequence including at least one deposition cycle, each cycle producing a monolayer of deposited material, the deposition cycle including introducing at least a first precursor species and a second precursor species to a substrate surface in a reaction chamber, wherein both of said first and second precursor species are present in gas phase in said reaction chamber simultaneously.

Abstract: Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOC films having improved acid-based wet etch resistance.

Abstract: A focus ring includes a main body and a plurality of unit structures. The main body has a ring shape. The unit structures are arranged in an uneven pattern and protrude from an upper surface of the main body.

Abstract: A device for coating sheet-type substrates, in particular glass panes, in a vacuum coating system is described. The system includes a) a series connection of chambers, through which each substrate sheet passes and which are arranged on the entry side, namely a load lock chamber, a buffer chamber and a transfer chamber, each of which is vacuum-sealable by a check valve. An area of process chambers follows the transfer chamber and the process chamber is followed by a transfer chamber, buffer chamber and load lock chamber. The system also includes b) a conveyor device; c) a vacuum pump with an adapter flange in the region of the buffer chamber; d) at least two flow baffles in the buffer chamber; e) a system for the longitudinal and height displacement of the flow baffles; and f) an assembly for controlling the dynamic processes.

Abstract: A method for creating a randomly-oriented, non-woven carbon nanotube (CNT) sheet with reduced reflectance includes: providing a randomly-oriented, non-woven CNT sheet; and performing plasma treatment of the randomly-oriented, non-woven CNT sheet, thereby creating a randomly-oriented, non-woven CNT sheet with reduced reflectance.

Abstract: Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.

Abstract: The present disclosure relates to a novel Group 5 metal compound, a method for preparing the Group 5 metal compound, a precursor composition for depositing a Group 5 metal-containing layer containing the Group 5 metal compound, and a method for depositing a Group 5 metal-containing layer using the precursor composition for depositing a Group 5 metal-containing layer.

Abstract: An article comprises a body having a coating. The coating comprises a Y-O-F coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

Abstract: Methods for forming a SiN-containing film are disclosed. The methods use film-forming compositions comprising Si—N containing precursors. Also disclosed are methods of synthesizing the same and methods of using the same for vapor deposition. In particular, a catalytic dehydrogenative coupling of carbosilanes with ammonia, amines and amidines produces the Si—N containing precursors.

Abstract: A method of fabricating a ceramic matrix composite includes generating a stream of vaporized precursor and, optionally, a vaporized rare earth element. The vaporized precursor is a precursor of either silicon carbide or silicon nitride. The stream flows for one or more periods of time through a chamber that contains a fibrous structure such that the fibrous structure is exposed to the stream. The fibrous structure initially contains no silicon carbide matrix or silicon nitride matrix. The vaporized precursor deposits over the period of time on the fibrous structure as a substantially fully dense ceramic matrix of either the silicon carbide or the silicon nitride. For at least a portion of the period of time, the vaporized rare earth element is included in the stream such that the ceramic matrix deposited during that time includes dispersed rare earth element.

Abstract: A film forming apparatus (10) includes a mask body (34) configured to expose inner surfaces (14a) of cylinder bores (14), and mask an inner surface (16a) of a crankcase (16). The mask body (34) includes a main body portion (104), a sealing member (106) and a biasing member (108). The main body portion (104) is configured to stretch and contract, and includes a first tubular member (100) and a second tubular member (102) configured to have an insert structure at least part of which is slidable along an axial direction. The main body portion (104) can stretch and contact in a state where at least one end in the axial direction thereof contacts an inner surface of a cylinder block (12). The sealing member (106) is interposed between sliding surfaces of the first tubular member (100) and the second tubular member (102). The biasing member (108) is configured to resiliently bias the first tubular member (100) and the second tubular member (102) in a stretching direction of the main body portion (104).

Abstract: A selective growth method of selectively growing a thin film on an underlayer, on which an insulating film and a conductive film are exposed, includes: preparing a workpiece having the underlayer on which the insulating film and the conductive film are exposed; and selectively growing a silicon-based insulating film on the insulating film by repeating a plurality of times a first step of adsorbing an aminosilane-based gas onto the insulating film and the conductive film and a second step of supplying a reaction gas for reacting with the adsorbed aminosilane-based gas to form the silicon-based insulating film, wherein the conductive film is vaporized by reaction with the reaction gas so that the conductive film is reduced in thickness.