Abstract: A method for fabricating a component according to an example of the present disclosure includes the steps of depositing a stoichiometric precursor layer onto a preform, and densifying the preform by depositing a matrix material onto the stoichiometric precursor layer. An alternate method and a component are also disclosed.

Abstract: Methods for filling a substrate feature with a seamless ruthenium gap fill are described. The methods include depositing a ruthenium film, oxidizing the ruthenium film to form an oxidized ruthenium film, reducing the oxidized ruthenium film to a reduced ruthenium film and repeating the oxidation and reduction processes to form a seamless ruthenium gap fill.

Abstract: Processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In particular, a process of bringing a compound of general formula (I) into the gaseous or aerosol state Ln - - - M - - - Xm??(I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is a metal, L is a ligand which coordinates to M and contains at least one phosphorus-carbon multiple bond, wherein L contains a phosphorus-containing heterocyclic ring or a phosphorus-carbon triple bond, X is a ligand which coordinates to M, n is 1 to 5, and m is 0 to 5.

Abstract: A device for making a carbon nanotube array includes a chamber, a gas diffusing unit, and a gas transporting pipe. The chamber defines a first inlet and a second inlet spaced apart from each other. The gas diffusing unit is in the chamber, and the gas diffusing unit is a hollow structure and defines a space, a first through hole, and an outlet. The gas transporting pipe has a first end and a second end opposite to the first end. The first end extends out of the chamber from the second inlet, and the second end is in the chamber and connected to the first through hole. The present application also relates to a method for making the carbon nanotube array.

Abstract: Modification of pigments may be performed using atomic layer deposition (ALD) to provide custom-tailored thermal protection characteristics. More specifically, ALD may be used to encapsulate pigment particles with controlled thicknesses of a thermal protective layer, such as VO2. ALD may allow films to be theoretically grown one atom at a time, providing angstrom-level thickness control.

Abstract: A metal mask plate and a method for manufacturing the same are disclosed. A metal mask plate for evaporation comprises: a frame including a first side bar and a second side bar which are opposite and parallel to each other, and a support for supporting the first side bar and the second side bar; and a plurality of metal masks disposed on a first side of the frame, each of the metal masks extending in a direction which is perpendicular to a direction in which the first side bar extends, and both ends of each of the metal masks being fixed to the first side bar and the second side bar respectively, so that the support is deformed by a surface tension of the plurality of metal masks to form a planar structure.

Abstract: Methods for controlling glow discharge in a plasma chamber are disclosed. One method includes connecting a radio frequency (RF) generator to a top electrode of a chamber, the chamber having chamber walls coupled to ground and connecting the RF generator to a bottom electrode of the chamber. Identifying a process operation of deposition to be performed in the chamber and setting an RF signal from the RF generator to be supplied to the top electrode at a first phase. And, setting the RF signal from the RF generator to be supplied to the bottom electrode at a second phase. The first phase and the second phase being adjustable to a phase difference to cause the plasma glow discharge to be controllably positioned within the chamber based on the phase difference.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: To provide a vapor deposition source of which material usage efficiency is higher as compared with the related art. A vapor deposition source (10) includes a vapor deposition particles ejecting unit (30) configured to include multistage of nozzle units layered apart from each other in a vertical direction, each of the nozzle units including at least one vapor deposition nozzle (32, 52), and at least one space part (43) provided between the multistage of vapor deposition nozzles, and a vacuum exhaust unit (14) connected with the at least one space part (43).

Abstract: A method of forming a moisture-tolerant coating on a silicon carbide fiber includes exposing a silicon carbide fiber to a gaseous N precursor comprising nitrogen at an elevated temperature, thereby introducing nitrogen into a surface region of the silicon carbide fiber, and exposing the silicon carbide fiber to a gaseous B precursor comprising boron at an elevated temperature, thereby introducing boron into the surface region of the silicon carbide fiber. Silicon-doped boron nitride is formed at the surface region of the silicon carbide fiber without exposing the silicon carbide fiber to a gaseous Si precursor comprising Si. Thus, a moisture-tolerant coating comprising the silicon-doped boron nitride is grown in-situ on the silicon carbide fiber.

Abstract: A film forming method comprises loading a substrate on a rotary table, forming an adsorption region for adsorbing a raw material gas to the substrate by discharging the raw material gas from multiple discharge ports, forming a reaction region, to which a reaction gas is supplied, at a position spaced from the adsorption region, separating an atmosphere of the adsorption region and an atmosphere of the reaction region by exhausting and by supplying a purge gas, forming a film by performing a cycle a plurality of times to deposit the reaction product on the substrate, the cycle comprising passing the substrate through the adsorption region and the reaction region and setting a combination of flow rates of the raw material gas for a first pattern in order to perform the cycle with the first pattern and for a second pattern in order to perform the cycle with the second pattern.

Abstract: In some embodiments, deposition processes for ruthenium (Ru) feature fill include deposition of a thin, protective Ru film under reducing conditions, followed by a Ru fill step under oxidizing conditions. The presence of protective Ru films formed under oxygen-free conditions or with an oxygen-removing operation can enable Ru fill without oxidation of an underlying adhesion layer or metal feature.

Abstract: An example method for chemical vapor deposition (CVD) of thin films includes providing a deposition zone in a reaction chamber having a fixed showerhead assembly that introduces CVD reactive gases under positive pressure into the deposition zone. The example method also includes moving a substrate carrier beneath the showerhead assembly in the reaction chamber, the substrate carrier supports and transports at least one substrate within the reaction chamber so as to be subjected to a CVD process by the CVD reactive gases. The example method also includes providing a liner assembly shrouding the deposition zone and including at least one partial enclosure around the deposition zone isolating the deposition zone and the substrate carrier, whereby solid reaction byproducts are plated onto material in the liner assembly and gaseous reaction byproducts flow radially outward, the liner assembly being mounted on the substrate carrier for motion with the substrate carrier.

Abstract: The present invention generally relates to a process for manufacturing graphene coated surfaces using the intrinsic carbon within a metal.

Abstract: A high speed deposition apparatus for the manufacture of solid state batteries. The apparatus can be used for the manufacture of solid state multilayer stacked battery devices via a vacuum deposition process. In various embodiments, the manufacturing apparatus can include a containment vessel, a reactor region, a process region, a work piece, one or more vacuum chambers, and an energy source. A complete stack of battery layers can be manufactured in a single vacuum cycle, having background gas, pressure, and deposition rate optimized and controlled for the deposition of each layer. The work piece can include a drum and a substrate, which can be a commercial polymer or metallic web, that are temperature controlled. Masks can be used to delineate or shape layers within the multi-layer stacked electrochemical device manufactured by embodiments of the apparatus.

Abstract: A method deposits a metal alloy coating on a substrate using a vacuum deposition facility. The facility is equipped with a vapour generator/mixer comprising a vacuum chamber enclosure provided with an inlet and an outlet for the substrate. The enclosure includes a vapour deposition head and an ejector is provided to create a jet of metal alloy vapour of sonic velocity towards the surface of the substrate and perpendicular thereto. The ejector is in sealed communication with a separate mixer device, which is itself connected upstream to at least two crucibles respectively, these containing different metals in liquid form, each crucible being connected to the mixer by its own pipe. The method uses a series of partitions to create alternating layers of metal vapours. The metal vapours enter the mixer inlet of the mixer at a velocity from 5 to 50 m/s to provide better homogeneity.

Abstract: Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.

Abstract: A process for synthesizing a biphasic material, the biphasic material comprising at least one mesoporous substrate surrounded with carbon nanotubes, the process comprising step (a) of providing a catalyst on the at least one mesoporous substrate, the catalyst being configured to favour the growth of the carbon nanotubes, and the process comprising step (b) of performing the growth of the carbon nanotubes. The synthesis process is remarkable in that the two steps (a) and (b) are performed in a one-pot synthesis.

Abstract: According to certain embodiments, a method of producing a pattern on a substrate comprises securing a flexible polymeric substrate, printing a layer of ink as a negative pattern on the substrate, and placing the flexible polymeric substrate in a vacuum chamber. The method further includes uniformly applying, while the flexible polymeric is under a vacuum in the vacuum chamber, a layer of material over both the layer of ink and the substrate via physical vapor deposition and then removing the flexible polymeric substrate from the vacuum chamber. The method further includes removing the ink and material applied over the ink by immersing the flexible polymeric substrate in a solvent such that it results in a desired pattern of the material on the flexible polymeric substrate.

Abstract: A method for manufacturing a laminate has a process of forming a film on a substrate by an atomic layer deposition method and a process of forming a layer containing a compound polymerizable with acid and an acid generator, and then curing the layer to form resin layer on the film, in which the nitrogen atom atomic composition ratio of the film is 2.5% or less.