Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem.

Abstract: Embodiments of the invention generally provide a lid heater for a plasma processing chamber. In one embodiment, a lid heater assembly is provided that includes a thermally conductive base. The thermally conductive base has a planar ring shape defining an inner opening. The lid heater assembly further includes a heating element disposed on the thermally conductive base, and an insulated center core disposed across the inner opening of the thermally conductive base.

Abstract: A film forming apparatus according to an embodiment of the invention includes: a film forming chamber configured to form a film on a substrate; a susceptor configured to place the substrate thereon; a rotating part configured to rotate the susceptor; a heater configured to heat the substrate; and a gas supplier configured to supply process gases into the film forming chamber, wherein the susceptor includes: a ring-shaped outer circumferential susceptor supported by the rotating part; a holder provided at an inner circumferential portion of the outer circumferential susceptor, the holder configured to hold the substrate; a ring-shaped plate provided over the outer circumferential susceptor; and a cover member configured to cover a top surface and an outer circumferential surface of the plate and an outer circumferential surface of the outer circumferential susceptor.

Abstract: A substrate processing apparatus includes a mounting stand installed to rotate about a rotation shaft extending along a rotary shaft of a rotary table and configured to hold a substrate, and a magnetic gear mechanism including a driven gear configured to rotate the mounting stand about the rotation shaft and a driving gear configured to drive the driven gear. The driven gear is connected to the mounting stand via the rotation shaft and installed to rotate in such a direction as to rotate the mounting stand. The driving gear is disposed in a state in which the driving surface faces the driven surface passing through a predetermined position on a movement orbit of the driven gear moving along with the rotation of the rotary table.

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

Abstract: A showerhead module adjustment mechanism is provided which supports a showerhead module in a top plate of a semiconductor substrate processing apparatus, the showerhead module adjustment mechanism being dynamically operable to adjust a planarization of a faceplate of the showerhead module with respect to an upper surface of a substrate pedestal module adjacent the faceplate in the semiconductor substrate processing apparatus.

Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.

Abstract: An electrostatic chuck, a substrate processing apparatus, and a method of manufacturing a semiconductor device are provided. The electrostatic chuck comprises a chuck base, an insulation plate on the chuck base, a first heater comprising a cell heater in the insulation plate, and a heater controller configured to control the cell heater. The heater controller obtains a resistance of the cell heater and compares the resistance with a threshold value to control a heating power provided to the cell heater.

Abstract: A mounting table includes a cooling table, a power feed body, an electrostatic chuck, a first elastic member and a clamping member. The power feed body is connected to the cooling table to transmit a high frequency power. A base of the electrostatic chuck has conductivity. An attraction unit has an attraction electrode and a heater therein, and is fastened to the base by metal bonding. The first elastic member is provided between the cooling table and the base to allow the electrostatic chuck to be spaced apart from the cooling table. The first elastic member forms, along with the cooling table and the base, a heat transfer space into which a heat transfer gas is supplied. The clamping member is contacted with the cooling table and the base, and allows the base and the first elastic member to be interposed between the cooling table and the clamping member.

Abstract: Embodiments described herein include integrated systems used to directly monitor a substrate temperature during a plasma enhanced deposition process and methods related thereto. In one embodiment, a substrate support assembly includes a support shaft, a substrate support disposed on the support shaft, and a substrate temperature monitoring system for measuring a temperature of a substrate to be disposed on the substrate support. The substrate temperature monitoring system includes a optical fiber tube, a light guide coupled to the optical fiber tube, and a cooling assembly disposed about a junction of the optical fiber tube and the light guide. Herein, at least a portion of the light guide is disposed in an opening extending through the support shaft and into the substrate support and the cooling assembly maintains the optical fiber tube at a temperature of less than about 100° C. during substrate processing.

Abstract: A method and apparatus for biasing regions of a substrate in a plasma assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

Abstract: In one embodiment, an adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the first annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.

Abstract: A temperature control device includes: a circulating cooling/heating unit cooling and heating a circulating fluid and circulating the circulating fluid relative to a chamber; a controller adjusting a temperature of the circulating fluid to adjust the temperature of the chamber to a temperature setpoint, and a housing for housing the circulating cooling/heating unit and the controller, the housing defining therein a circulation chamber in which the circulating cooling/heating unit is disposed and a control chamber in which the controller is disposed. These chambers are on the same level. A reservoir for storing the circulating fluid, a pump for circulating the circulating fluid, a heat exchanger for cooling the circulating fluid, and a heater for heating the circulating fluid are disposed in the circulation chamber. An inverter for controlling a drive of the pump and an SSR for switching ON/OFF of the heater are disposed in the control chamber.

Abstract: The present invention provides a rotating semi-batch ALD device and process which ensure high productivity, minimal particle formation, low gas consumption and high coverage during the production of semiconductors, liquid crystals, LEDs and/or solar cells. The rotating semi-batch ALD device and ALD process are characterized in that: a reaction gas supply means is configured from a shower plate for evenly discharging gas, a cavity for allowing gas to flow down gradually, and a partition wall surrounding the shower plate and the cavity; and a purge gas supply means is configured from a shower plate that causes gas to flow evenly at a high flow velocity in the transverse direction in the narrow gap between the purge gas supply means and substrates being treated.

Abstract: A gas shower device having gas curtain comprises a first gas shower unit for injecting a reaction gas, thereby forming a reaction gas region, and a second gas shower unit. The second gas shower unit arranged around a periphery of the first gas shower unit comprises a buffer gas chamber for providing a buffer gas, and a curtain distribution plate. The curtain distribution plate further comprises a plurality through holes for injecting the buffer gas, thereby forming a gas curtain around a periphery of the reaction gas region. In another embodiment, an apparatus for depositing film is provided by utilizing the gas shower device having gas curtain, wherein the gas curtain prevents the reaction gas in the reaction gas region from being affected directly by a vacuum pressure so that a residence time of reaction gas can be extended thereby increasing the utilization of reaction gas and film-forming efficiency.

Abstract: Embodiments of the present invention provide a dual load lock chamber capable of processing a substrate. In one embodiment, the dual load lock chamber includes a chamber body defining a first chamber volume and a second chamber volume isolated from one another. Each of the lower and second chamber volumes is selectively connectable to two processing environments through two openings configured for substrate transferring. The dual load lock chamber also includes a heated substrate support assembly disposed in the second chamber volume. The heated substrate support assembly is configured to support and heat a substrate thereon. The dual load lock chamber also includes a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume.

Abstract: A tubular filament assembly for a CVD silicon deposition reactor is disclosed that provides consistent, low resistance connections to vertical tubular filaments by forming slidable connections between upper and/or lower ends of the tubular filaments and shaped elements cooperative with the bridge and/or the support chucks, so that the connections are insensitive at least to small variations in tilt angle of the vertical filaments and/or the horizontal bridge. The shaped elements can be incorporated into or separate and cooperative with the bridge and/or the chucks. Various embodiments are described.

Abstract: An epitaxial growth device comprises a reaction chamber defined by a substrate setting portion, a ceiling board and a sidewall portion, a heating member and reactant gas-introduction member. The ceiling board is fixed to a ring-like support portion having a through-hole as viewed from above. A diameter of the through-hole becomes reduced gradually toward a substrate-side. The ceiling board is fixed to an end portion of the substrate-side of the through-hole.

Abstract: Embodiments of the invention provide a tray device, a reaction chamber, and a MOCVD apparatus including the reaction chamber. According to an embodiment, the tray device includes a large tray, a rotating shaft, a small tray, and a supporting disk. The rotating shaft is connected with the center of the large tray and drives the large tray to rotate about the rotating shaft. The large tray is provided with a tray groove for placing the small tray. The supporting disk is located under the large tray. A sliding mechanism is provided between the supporting disk and the small tray, so that when revolving along with the large tray, the small tray spins under the function of the sliding mechanism.

Abstract: A substrate support in a substrate processing system includes an inner portion and an outer portion. The inner portion is positioned below a gas distribution device configured to direct first process gases toward the inner portion. The outer portion includes an edge ring positioned around an outer perimeter of the inner portion to at least partially surround the inner portion and a substrate arranged on the inner portion. The edge ring is configured to be raised and lowered relative to the inner portion, and to direct second process gases toward the inner portion. A controller determines distribution of material deposited on the substrate during processing and, based on the determined distribution, selectively adjusts a position of the edge ring and selectively adjusts flow of at least one of the first process gases and the second process gases.