Abstract: A case-hardened, corrosion-resistant steel article is provided which comprises, applying a coating of nickel and/or cobalt to the surface of the article and then subjecting said coated article to carburization by heating said coated article to and maintaining it at an austenitic temperature under carburizing conditions for a time sufficient to effect carbon diffusion into the surface of the steel article. The corrosion resistance of the steel may be further enhanced by applying a thin layer of a final metal coat selected from the group consisting of Cr, Sn, Pb, Zn, Cu and Cd.

Abstract: There is disclosed a method of manufacturing a multicolor monolithic light display utilizing the etching of multiple channels in a substrate and selectively refilling said channels with single crystal material, each channel being filled with material capable of emitting light of a given wavelength, depending on the dopant or the type of material deposited. There is also disclosed a multicolor or monolithic light display comprising at least a pair of matrices of light emitting diodes in an integral structure which pair of matrices are alternatively or simultaneously, scannable to produce a display in a first and a second color. Each matrix includes a plurality of light emitting diodes, preferably gallium phosphide, which, by proper doping, can be made to emit either a red or a green wavelength of light.

Abstract: Materials for tamping battery mix, composed of an intermetallic compound of CoTi or Co-Ti binary alloy having a composition near the intermetallic compound or composed of the intermetallic compound in which part of the constituents are replaced by other elements and having excellent wear resistance and burning resistance as well as corrosion resistance against the battery mix.

Abstract: The body of a PIN photodiode is of a silicon semiconductor material. The PIN photodiode has a large area incident surface on which light impinges and is operated at high voltages. In the fabrication of a PIN photodiode, as described, a high concentration of N-type dopant is deposited on the body. It has been discovered that if a phosphorus silicate glass, as a source of N-type dopant, is in contact with a surface of the PIN photodiode body in a high temperature ambient and for an extended period of time, lattice damage on the surface of the silicon body results. These lattice defects are responsible for premature voltage breakdown in the device. In a first method of fabrication of PIN photodiode devices the phosphorus silicate glass is on the silicon surface for about 12 minutes after which it is removed and then any phosphorus atoms in the surface of the body are diffused into the body.

Abstract: The invention concerns a method for the manufacture of a superconductor with a layer of the A-15 phase of the system Nb-Al-Si. According to the invention, a niobium carrier is provided with a layer about 0.5 to 5 .mu.m thick consisting of Nb.sub.3 (Al,Si), aluminum and silicon by placing it in an aluminum melt which contains up to 10 atomic percent of silicon and a small amount of niobium and is heated to 850.degree. to 1300.degree. C, and then the niobium carrier provided with this layer is annealed in an inert atmosphere for at least 0.5 seconds to form the layer of the A-15 phase.

Abstract: A hard, copper free gold alloy for dental purposes is prepared containing 61 to 85 weight % gold, 8 to 15 weight % platinum, 0 to 4 weight % palladium, 5 to 15 weight % silver and 2 to 5 weight % zinc. 0.05 to 0.1 weight % of the platinum can be replaced by iridium.

Abstract: This invention relates to improved process and apparatus for producing reinforced composite light alloys. The improved apparatus comprises means for feeding a fluidized mixture of particulate additions, carried by a neutral gas, to a crucible in which a basic metal consisting preferably of nearly pure aluminium ingots is molten. Means are provided for stirring the contents of crucible during the feeding of said mixture thereto, in order to prevent the sedimentation or decantation of the dispersion formed therein. Means are further provided for transferring the mixture of basic metal and additions into another receptacle in which the desorption and degasing of said mixture take place.

Abstract: Component parts of a steel container for storing a gas, specifically a mixture of stabilized methylacetylene and propadiene (C.sub.3 H.sub.4), are joined by a brazing alloy consisting of about 48% to 67% by weight copper; about 4.5% to about 7% by weight phosphorous and the balance nickel. During manufacture of the container, component parts may be joined either by brazing the joint with the specified alloy in wire or rod form or by applying to the joint a brazing paste comprising the specified metals unalloyed in powdered form and heating the joint in a furnace to melt and alloy the metals to form the joint. The brazing alloy has desirable metallurgical characteristics and is nonreactive to exposure to the specified gas stored in the container. The brazing paste has characteristics which enhance its utility for mass production techniques.

Abstract: A high power semiconductor device is formed by providing a semiconductor substrate of N.sup.- conductivity, rendering the backside of same porous as by subjecting same to anodic treatment carried out in a concentrated solution of hydrofluoric acid, converting the porous region to an N.sup.+ region, as by arsenic diffusion and forming an active device by conventional techniques in the top surface of the substrate. The method permits usage of high quality N.sup.- substrates and at the same time eliminates the requirement of growing thick epitaxial layers.

Abstract: Precipitation hardenable or hardened nickel-cobalt-iron base alloy containing nickel, cobalt, iron, columbium, titanium, aluminum and boron as the only essential elements, characterized by a mean coefficient of linear expansion of about 3.times.10.sup.-.sup.6 /.degree. F to 6.times.10.sup.-.sup.6 /.degree. F from room temperature to its Curie temperature of at least about 600.degree. F to 1000.degree. F or higher. The alloy contains about 35-45% nickel, 13-18% cobalt, 2.5-7.0% columbium, 1.0-4.0% titanium, 0.1-2% aluminum, and a small but essential amount of boron.

Abstract: In a first step, the semiconductor material is doped in a known manner with impurities having a given conductivity type and a given concentration profile. In a second step, the material is maintained at a high temperature, bombarded with a beam of particles which are accelerated with a given energy so as to penetrate into the crystal during a predetermined time interval. The resultant migration of impurities produces an increase in the impurity concentration irrespective of the sign of the initial concentration gradient within a zone adjacent to the zone of stopping of the particles.

Abstract: An array of microcrystalline silicon pads for a vidicon target is selectively grown, by the hydrogen reduction of silicon tetrachloride, along surface portions of a silicon wafer exposed through openings in an overlying silicon dioxide layer. The method disclosed avoids the spurious irregular growth of silicon on the silicon dioxide layer between the adjacent silicon pads.

Abstract: A composite section with a body mainly of light metal which has embedded in it inserts of a metal of higher strength. The inserts are not round in cross section and engage in the matrix by virtue of their shape.

Abstract: A gas carbon nitriding method to produce .epsilon.-carbon nitride layers on ferrous metal substrates. The gas atmosphere comprises partially dissociated ammonia and contains between about 2 and 20% (by volume) of carbon monoxide and carbon dioxide. The treatment temperature is between 500.degree. and 650.degree. C. The process is characterized in that the average nitriding potential, p.sub.NH.sbsb.3 /p.sub.H.sbsb.2.sup.1.5 , is between 0.5 and 5, and the partial pressure ratio, p.sub.CO /p.sub.CO.sbsb.2, is between about 1 and 10.The gas atmosphere is formed by introducing into the furnace chamber (a) an ammonia-containing gas, and (b) a combusted gas containing carbon dioxide.

Abstract: An MOS bucket brigade delay line having reduced parasitic capacitances and method for making the same, include a first set of diffused drain source regions in a semiconductor substrate, a thin gate oxide layer overlying said diffused regions, a plurality of gate electrodes having first and second edges, the first edge of each electrode substantially overlapping one of said diffused regions, each of these elements formed in conventional manner. A second set of diffused drain-source regions extends the first set of regions by an amount limited by the second edge of the gate electrodes. The second set of drain source regions is formed by utilizing the gate electrodes as a diffusion mask.

Abstract: A process for producing complementary metal-oxide-semiconductor/silicon-on-sapphire (CMOS/SOS) devices wherein undesirable effects of phosphorous on sapphire are avoided.

Abstract: A method of surface hardening for forming a hardened layer of cemented carbide, including cementite, on a local surface area of cast iron by rapidly melting the local surface by means of a rapid melting process such as the electron bombardment melting process to form a molten pool thereon, then rapidly cooling the molten pool by the chilling effect of the non-molten portion of cast iron and finally finishing the cast iron having the hardened layer thus formed to a desired shape. To this end, the cast iron used contains therein one or a mixture of deoxidizing agents such as aluminum, magnesium and calcium.

Abstract: Alloys for use as components of gas turbine engines have the following composition:______________________________________ Chromium at least 70% Yttrium 0.01% to 18% Y.sub.2 O.sub.3 up to 18% Aluminium up to 5% Silicon up to 8% Aluminium + silicon at least 0.01% ______________________________________The average spacing between yttrium and/or Y.sub.2 O.sub.3 -containing particles is preferably not more than 5 microns.

Abstract: A method of manufacturing a semiconductor device, comprising the steps of providing a semiconductor body comprising a first surface and an underlying semiconductor portion that is of first conductivity type, providing a doping material of said first conductivity type at a first portion of said first surface prior to the formation of a sunken insulating layer, said first portion being situated beside said sunken insulation layer, forming an insulation layer consisting of insulating material and sunk locally in said body from said first surface, and then introducing said doping material into said semiconductor body via said first portion of said first surface so as to form a zone of said first conductivity type, said zone contacting said underlying semiconductor portion, and zone extending at the area of contact to a depth greater than that of said sunken insulation layer.

Abstract: Methods for controlling the sizes and shapes of fragments produced by ward casings are disclosed.