Abstract: Improved properties are obtained in copper alloys containing from 7 to 14% nickel, from 1.5 to 3.3% tin, plus iron and/or cobalt in an amount from 0.1 to 3% each, by hot rolling, cold rolling, annealing and cold rolling, all under defined conditions. The resultant alloys are characterized by good strength, good bend properties, good solderability and low contact resistance.

Abstract: Metallic parts having a hard wear-resistant surface and the high impact resistance associated with softer materials are formed by coating a plurality of ductile, relatively soft metallic segments with a relatively hard wear-resistant material, stacking the segments so that portions of each of their coated surfaces are exposed to form a composite coated surface, and mechanically locking the segments together to form a unitary member. The members formed by this technique exhibit the surface characteristics associated with the hardened coating such as improved wear, impact and abrasion resistance, and exhibit the bulk physical properties of the base material such as strength and ductility. Moreover, the surface treatment has a depth which would be unobtainable if the part were formed of a single section treated with the surface coating; the coating is not only formed on the exterior surface of the composite part, but extends toward the interior of the part for substantial depths.

Abstract: A process for producing light emitting diodes is disclosed. In the process a major planar surface of a single crystal silicon wafer is modified to acceptably match the crystallographic lattice constant of a preselected electroluminescent single crystal semiconductor, such as gallium phosphide. The preselected electroluminescent semiconductor material is then epitaxially deposited in single crystal form on the modified surface of the silicon wafer, a step which is not feasible without the modification of the silicon wafer surface. Preferably, the modification is achieved by epitaxially depositing a thin layer of semiconductor material whose lattice structure offers, a substantially smaller disparity with the structure of the electroluminescent material than the existing disparity between the silicon wafer and the electroluminescent material.

Abstract: A multilayer structure comprising alternating metal and dielectric layers and having intralayer junctions for interconnecting the metal layers. The intralayer junctions are made integral with end faces of the metal layers.

Abstract: A wear-resistant composite material incorporating a refractory chemical compound in particulate form and an alloy matrix. The particles contain between 7 and 30 wt.% of chromium, between 30 and 40 wt.% of boron, the balance being titanium, have a size between 0.3 and 2 mm and are present in an amount between 40 and 80 vol.%, the balance being the alloy matrix. The material has an improved resistance to wear and consists of comparatively cheap and widely abundant ingredients.

Abstract: An improved phosphor-bronze copper alloy having good hot workability and mechanical properties, and method of processing same. A preferred alloy contains from 2 to 11% tin, from 0.01 to 0.3% phosphorus, from 0.2 to 0.8% chromium and from 0.3 to 2.0% each of iron and/or cobalt.

Abstract: A modified type 3004 aluminum alloy is provided characterized by an improved combination of cold workability and physical properties having particular use in the deep drawing of containers, such as beverage cans, and the like, said alloy containing a relatively high level of manganese ranging by weight from about 1.6 to 3 percent. The improvement is particularly apparent in the production of chill cast shapes (sheet metal stock), such as by the continuous casting of the alloy between a pair of water-cooled rolls.

Abstract: A method of making a semiconductor device is described in which opposite-type impurities are introduced into the same surface of a substrate in such manner that the region of impurities of the opposite-type to that of the substrate overlaps completely the other substrate surface region. Then an epitaxial layer is grown on the surface of the substrate. There is thus formed two buried layers of which the one with the same type conductivity of the substrate is completely separated and isolated from the latter by the buried layer of opposite-type conductivity. Methods are also described for the manufacture of complementary bipolar transistors, in which the pnp type is made by the above described method.

Abstract: A multiply durable laminated cookware unit includes components having a ferrous steel core ply roll plated with second and third aluminum plies which are softer and anodic relative to the core ply and which are bonded to the core ply under pressure so as to provide exposed surfaces on the unit which exhibit the properties of rolled solid aluminum sheets. The exposed edge of the steel core can be protected by drawing at least one of the softer anodic aluminum cover sheets such that it extends beyond the harder steel core and the extended portion of the aluminum sheet is folded over the steel core to seal the edge end of the steel core therebeneath.

Abstract: A method for making an IGFET is described. The method utilizes impurity ion implantation into the surface channel to determine the conductivity thereof. The advantages include special impurity profiles providing improved performance, better control over important parameters such as threshold voltage, the manufacture of improved tetrodes, and the manufacture of improved ICs using for example N- and P-channel devices, and depletion and enhancement devices combined in a single chip.