Abstract: A semiconductor device including: a filter circuit to subdivide and output the received signal as a first signal with a relatively low frequency and a second signal with a relatively high frequency; a first channel containing a photocoupler to convey the first signal output from the filter circuit; a second channel containing an isolator to convey the second signal from the filter circuit; and a signal synthesis circuit to sum and output the first signal conveyed by way of a first channel and a second signal conveyed by way of a second channel.

Abstract: A contact image sensor unit includes: a light source (10) illuminating an original; a rod-like light guide (11) guiding light from the light source to the original; an imaging element (12) forming reflected light from the original on a plurality of photoelectric conversion elements; a sensor substrate (14) on which the plurality of photoelectric conversion elements are mounted; a frame (15) to which they are attached and which has a positioning part (200) for attaching the light guide (11) thereto; and a supporting member (16) which attachably/detachably supports the light guide (11) and is attachably/detachably attached to the positioning part (200). Since the light guide (11) can be attached to the frame (15) without using an adhesive, the deformation of the light guide (11), the warpage of the contact image sensor unit and so on can be prevented.

Abstract: An optical sensor is provided according to an embodiment of the present disclosure. The optical sensor includes a first photodiode, a second photodiode having characteristics different from characteristics of the first photodiode, filters configured to block or transmit a specific wavelength range of the light, and an output circuit configured to correct a sensitivity deviation, which may be caused when one of the filters is used for the first photodiode, based on a sensitivity deviation, which may be caused when the other filter of the same kind as the one filter is used for the second photodiode, and output only the specific wavelength range of the light.

Abstract: A optical control sensor system includes a driver controlling an operation of a light source coupled to an end of an optical fiber, an orthogonal signal generator, generating a set of different orthogonal signals controlling the driver, a terminal sensor coupled to another end of the optical fiber selecting a predetermined set of input orthogonal signals for converting them into component combinations, constituting output signals, and directing the output signals back to the optical fiber, a device coupled to the light sources and to the first end of the optical fiber for extracting output signals that have passed through a return path in the optical fiber, a detector converting optical output signals into electrical signals, and a selector and a decoder connected to the orthogonal signal generator indicating a current state of the optical control sensor system based on an analysis of the selected combinations of components in the output signals.

Abstract: A semiconductor device including: a filter circuit to subdivide and output the received signal as a first signal with a relatively low frequency and a second signal with a relatively high frequency; a first channel containing a photocoupler to convey the first signal output from the filter circuit; a second channel containing an isolator to convey the second signal from the filter circuit; and a signal synthesis circuit to sum and output the first signal conveyed by way of a first channel and a second signal conveyed by way of a second channel.

Abstract: A pixel readout circuit for use with an imaging pixel array, comprising: an input channel for receiving an image signal corresponding to an electrical output of a photosensitive element of the pixel; and an electronic circuit interconnected between an input channel and an output readout utility. The electronic circuit comprises a capacitive unit, and a single analyzer. The capacitive unit is controllably linked to the input channel for accumulating a charge corresponding to received intensity generated by the pixel during a single frame period, and is connected to the output readout utility.

Abstract: A polarized light detection system includes a detection apparatus, a power source, and a photoresistor. The detection apparatus, power source and photoresistor are electrically connected with wires to form a galvanic circle. The photoresistor includes a photosensitive material layer with a first surface and a second surface opposite to each other, a first electrode layer located on the first surface of the photosensitive material layer, and a second electrode layer located on the second surface of the photosensitive material layer. The first electrode layer includes a carbon nanotube film structure.

Abstract: Provided is a photodetector in which narrowing of a detecting range of light is suppressed. The photodetector includes a photodetector circuit for outputting a first optical data signal and a second optical data signal in which values are determined in accordance with an illuminance of incident light, an analog arithmetic circuit to which the first optical data signal and the second optical data signal are input and in which an arithmetic processing is performed with the use of the first optical data signal and the second optical data signal, and a switching circuit for switching an arithmetic processing in the analog arithmetic circuit between an addition operation and a subtraction operation of the first optical data signal and the second optical data signal.

Abstract: A Dual-Side Illumination (DSI) image sensor chip includes a first image sensor chip configured to sense light from a first direction, and a second image sensor chip aligned to, and bonded to, the first image sensor chip. The second image sensor chip is configured to sense light from a second direction opposite the first direction.

Abstract: Disclosed herein is a solid-state imaging device including: a sensor element having a plurality of pixels each having a photoelectric conversion section; and a logic element attached to the sensor element in such a manner as to be stacked on the sensor element face-to-face and provided with a pad electrode. In a stacked body of the sensor and logic elements, a pad opening is provided above the top surface of the pad electrode facing the sensor element, and a pad periphery guard ring is provided to surround the side portion of the pad opening. The pad periphery guard ring is formed by integrally filling, on the side of the pad opening, an entire trench that is at least as deep as the pad opening with a metal material.

Abstract: A solid-state imaging device is provided that includes a pixel array section having pixels which detect a physical quantities that are arranged in two dimensions of a matrix; an Analog-Digital (AD) converting section that performs AD conversion for a plurality of channels of analog pixel signals which are read-out from the pixel array section; and a control section that sets quantized units AD-converted by the AD conversion section according to a gain setting of the unit pixel signal, where the control section determines a grayscale number of digital outputs AD-converted for at least one channel of the unit pixel signals according to the gain setting of the pixel signal.

Abstract: A phase noise detection apparatus comprises a laser beam, an optical resonator coupled thereto at a coupling point and a photodetector receiving light from the laser beam. The laser beam and the resonator coupled thereto convert phase noise of light transported by the laser beam prior to the coupling point into intensity noise of light transported by the laser beam thereafter. Intensity noise is converted into an electrical signal by the photodetector. The electrical signal is sent through a first signal path and a second signal path such that the first signal path transports a signal substantially proportional to the intensity noise, which is integrated in an integrator in the second path. Relative gain of the two signal paths can be adjusted and the overall gain of the signal path is preferably such that the optical phase modulator at least partially cancels said phase noise in the optical domain.

Abstract: An optical fiber assembly includes a prism, four first collimating portions, four second collimating portions, two third collimating portion, two light emitting elements, two light receiving elements, four optical fibers, and two light intensity detectors. The prism includes an incident surface, a first reflecting surface, a first emergent surface, a second reflecting surface, and a second emergent surface. The first collimating portions are positioned on the incident surface. The second collimating portions are positioned on the first emergent surface. The third collimating portions are positioned on the second emergent surface. Each light emitting element faces one of the first collimating portions for emitting light beams. Each light receiving element faces one of the first collimating portions. Each optical fiber faces one of the second collimating portions. Each light intensity detector faces one of the third collimating portions for detecting light intensity of a corresponding light emitting element.

Abstract: An autofocus control apparatus includes a beam splitter, a condenser lens and a detector. The beam splitter directs light beams from a light source toward a sample and passes light beams reflected from the sample to the condenser lens. The condenser lens condenses the light beams, and the detector detects a focal point deviation of the sample relative to a focal point of the condenser lens. The focal point deviation is detected based on an intersection of a focal line passing through different focal points of the condenser lens and a light receiving plane configured to receive the light beams passing through the condenser lens.

Abstract: A pixel comprises a photodetector and a control circuit. The pixel is provided with an output terminal designed to connect an analysis circuit. The photodetector is configured to have two different operating modes associated with different biasing conditions. A switch connecting the photodetector to the output terminal of the pixel and a circuit for a connecting/disconnecting the control circuit with the output terminal of the pixel and with the photodetector allow to switch between the two operating modes. A comparator compares the voltage across the capacitive load with respect to a threshold value and outputs first and second signals according to the comparison. The comparator is connected to the circuit for connecting/disconnecting the control circuit and to the switch.

Abstract: A method and device for imaging or detecting electromagnetic radiation is provided. A device structure includes a first chip interconnected with a second chip. The first chip includes a detector array, wherein the detector array comprises a plurality of light sensors and one or more transistors. The second chip includes a Read Out Integrated Circuit (ROIC) that reads out, via the transistors, a signal produced by the light sensors. A number of interconnects between the ROIC and the detector array can be less than one per light sensor or pixel.

Abstract: A photoelectric conversion apparatus includes, on one substrate, a pixel driving unit and a signal processing unit that includes a digital circuit configured to execute signal processing. A first voltage and a second voltage different in value from the first voltage are supplied to the digital circuit of the pixel driving unit. A third voltage and a fourth voltage different in value from the third voltage are supplied to the digital circuit of the signal processing unit. A main portion of a first conductor that supplies the first voltage to the digital circuit of the pixel driving unit and a main portion of a second conductor that supplies the third voltage to the digital circuit of the signal processing unit are isolated from each other.

Abstract: A device and method to protect an APD or SiPM optical receiver against photodetector voltage supply variation is presented. A differential trans-impedance amplifier includes one input connected to the photodetector and the other input connected to a high voltage supply variation sensing device. The sensing element includes a circuit replicating the impedance of the photodetector.

Abstract: A photo-sensing pixel circuit including a photo-sensing part, a transfer transistor, a plurality of adjustment transistors, and an output circuit is provided. The photo-sensing part senses a light source and generates a corresponding number of electrons. The transfer transistor coupled to the photo-sensing part has a floating node and converts the electrons generated by the photo-sensing part into a voltage signal. The adjustment transistors have a first end and a second end, wherein the first end is coupled to a power supply, and the second end is coupled to the transfer transistor via the floating node. The output circuit coupled to the transfer transistor outputs a sensing signal according to the voltage signal, wherein the sensing signal is corresponding to the brightness of the light source. The adjustment transistors operate in at least two operation modes. Different numbers of the adjustment transistors are turned on in different operation modes.

Abstract: A solid state image sensor includes a plurality of pixels, each having a photoelectric conversion section formed in the inside of a substrate and a light-receiving section formed on the side of a light-receiving surface of the substrate. At least a part of the plurality of pixels is ranging pixels. The light-receiving section of each of the ranging pixels is equipped with a guided mode resonant filter adapted to reflect incident light getting into the inside of the light-receiving section at a specific incident angle. The normal line of the guided mode resonant filter is inclined relative to the principal ray of the flux of light entering the guided mode resonant filter.