Abstract: A solid state image pickup device may include a pixel unit that includes a photoelectric conversion element, the pixel unit including a plurality of pixels that are arranged in a form of a two-dimensional matrix in the pixel unit, each of the plurality of pixels outputting a reset signal and a pixel signal, an analog signal processing unit that includes a first capacitor and a second capacitor, a delay circuit that includes a plurality of delay elements that are connected in a ring form, an A/D converter that detects the number of stages in which the pulse signal has propagated through the delay elements in the delay circuit during a sampling time period and generates a digital signal based on the detected number of stages, and a switching circuit that switches a connection of the first capacitor.

Abstract: Influence of external light is suppressed. With a photodetector including a photodetector circuit which generates a data signal in accordance with illuminance of incident light and a light unit which overlaps with the photodetector circuit, a first data signal is generated by the photodetector circuit when the light unit is in an ON state, a second data signal is formed by the photodetector circuit when the light unit is in an OFF state, and the first data signal and the second data signal are compared, so that a difference data signal that is data of a difference between the two compared data signals is generated.

Abstract: An image sensor with a small circuit area is provided. In the image sensor, a TX decoder which generates transfer signals TX<3:0> includes a latch circuit. The latch circuit is set when a corresponding row group is selected and when a set signal is set to an “H” level, and is reset when a reset signal is set to an “L” level. The latch circuit serves also as a voltage level shift circuit which converts the “H” level of a signal from a first power supply voltage into a second power supply voltage. Therefore, plural row groups can be selected by setting plural latch circuits. It is not necessary to provide a voltage level shift circuit separately.

Abstract: An autofocus device including: an optical source; an optical unit that allows emitted light from the optical source and object light from a measurement target to pass through the same optical path, the optical unit being arranged between the optical source and the measurement target; and a detection unit that performs focus detection by using the object light passed through the optical unit. The optical unit includes: a tube lens that forms the emitted light into parallel light; an image forming unit that forms a continuous line image on a surface of the measurement target; and a rotation unit that rotates the continuous line.

Abstract: A polarization diversity detector includes at least one optical fiber having a first end for receiving a beam of light and a second end for transmitting the beam of light. A collimator receives the beam of the light from the optical fiber and outputs a collimated beam. A polarization diversity element includes a birefringent material which is positioned for receiving the collimated beam and resolving the collimated beam into a first beam having a first polarization and a second beam having a second polarization different from the first polarization. The first beam and second beam are angled relative to one another. At least one photodetector array pair includes a first photodetector array positioned to receive the first beam and a second photodetector array positioned to receive the second beam.

Abstract: An optical readhead for measuring a displacement along a measuring axis direction between the readhead and a scale track comprises an illumination portion configured to output source light to the scale track and a monolithic detector configuration. The monolithic detector configuration comprises: a first track photodetector portion configured to receive scale light from the scale track; a first metal layer; a second metal layer; and a plurality of dummy vias between the first metal layer and the second metal layer. The plurality of dummy vias is arranged to block light transmission along a layer between the first and second metal layers, and the plurality of dummy vias is formed by the same process steps used to fabricate a plurality of active vias used to connect circuit elements on the monolithic detector configuration.

Abstract: An image pickup device may include an image pickup unit in which a plurality of pixels are arranged, the plurality of pixels outputting a first and second pixel signals, and an analog-to-digital (AD) conversion circuit that outputs a digital difference signal. The AD conversion circuit may include a delay circuit that has a plurality of delay devices, the delay circuit outputting a first and second lower phase signals, a latch unit that latches the first and second lower phase signals, a lower counting unit that generates a first and second lower count signals, the lower counting unit generating and outputting a lower difference signal, and a higher counting unit that generates a higher difference signal, subtracts a predetermined number from the higher difference signal, or adds the predetermined number to the higher difference signal, and outputs the higher difference signal after subtraction or addition processing.

Abstract: A dual speed Read-Out Integrated Circuit employs a native pixel array with associated high resolution integration circuits for each pixel and a superpixel array created within the native pixel array by combination of native pixels for charge sharing integration in reduced resolution integration circuits simultaneously with the integration of the high resolution integration circuits. Switching control for readout of the high resolution integration circuits is accomplished at a first frame rate and switching control for readout of the reduced resolution integration circuits is accomplished at a second higher frame rate.

Abstract: An example double-sided image sensor includes a semiconductor die, a photodetector, a charge-to-voltage converter, and support circuitry. The semiconductor die has a first side and a second side that is opposite the first side. The photodetector is disposed within the semiconductor die on the first side for accumulating an image charge in response to light incident on the first side. The charge-to-voltage converter is disposed within the semiconductor die on the first side. The transfer gate is also disposed on the first side of the semiconductor die between the photodetector and the charge-to-voltage converter to transfer the image charge from the photodetector to the charge-to-voltage converter. Support circuitry of the image sensor is disposed within the semiconductor die on the second side and is electrically coupled to the charge-to-voltage converter.

Abstract: A display system can include a transparent layer. The transparent layer can include a front and a back. A bevel region can extend from the transparent layer. A panel can be on the back of the transparent layer. A three dimensional optical sensor can be on the back of the bevel region.

Abstract: A sensor circuit integrated with a signal processing circuit and a charging circuit. The sensor circuit has a sensor voltage source to which a sensor internal resonance is connected in series, the signal processing circuit having a capacitor to which the sensor voltage source is connected via a signal line of the charging circuit, and a switch. The charging circuit includes another capacitor connected to the signal line, and a drive circuit at an input side of which the other capacitor is connected and which has a transconductance equivalent to an internal resistance.

Abstract: A photoelectric encoder includes a scale in which diffraction gratings are formed at predetermined pitches in a measurement axis direction, a detection head which is relatively movable with respect to the scale, and which includes an illuminating portion configured to illuminate the scale, and a light receiving portion configured to receive light reflected by or transmitted through the diffraction gratings of the scale, a signal processing device configured to process a light reception signal output from the light receiving portion of the detection head, and a signal transmitting unit configured to transmit a signal between the detection head and the signal processing device. The signal processing device includes a display unit configured to display information indicating an attachment posture of the detection head with respect to the scale.

Abstract: There are provided a photodiode 11, an inverting amplifier 12 which includes an operational amplifier 12a and a first resistor 12b, a second resistor 21 which has a smaller resistance value than the first resistor 12b and which is inserted between the positive side of a power supply and the photodiode 11, a differential amplifier 22 which outputs a voltage across both ends of the second resistor 21, and a diode 23 which is connected between a ground and a connection point between the photodiode 11 and an inverting input terminal of the operational amplifier 12a and which changes to a non-conductive state when the inverting amplifier 12 is not saturated and changes to a conductive state when the inverting amplifier 12 is saturated so that the output current of the photodiode 11 is bypassed.