Abstract: A trap apparatus provided between a chamber and an evacuating unit, includes an inlet port and an exhausting port to be respectively connected to the chamber and the evacuating unit; a cooling trap portion provided with a first space for cooling gas in the first space; and a bypass portion provided with a first channel capable of communicating between the inlet port and the first space, a second channel capable of communicating between the first space and the exhausting port, and a second space capable of communicating between the inlet port and the exhausting port, the bypass portion being relatively movable with respect to the cooling trap portion to selectively form a first path from the inlet port to the exhausting port via the first channel, the first space and the second channel, and a second path from the inlet port to the exhausting port via the second space.

Abstract: Provided a measuring apparatus includes a wavelength dispersion device which dispersed light reflected by one surface of an examination target having a thickness D and light reflected by a rear surface of the examination target, as incident light, a detector in which a plurality of photodetection elements receiving light dispersed by the wavelength dispersion device and detecting a power of the received light in are provided in an array shape, and a piezoelectric device which is attached to the detector to convert an applied voltage into a mechanical power, wherein the detector detects the power of the received light when the detector is shifted by the mechanical power converted by the piezoelectric device as much as d/m, where d is a width of each of the photodetection elements in an array direction and m is an integer equal to or greater than 2.

Abstract: A lateral flow atomic layer deposition (ALD) apparatus has two gas inflow channels and two gas outflow channels that are connected to two gas outlets that are symmetrically formed based on a substrate in which a thin film is deposited, thereby differently guiding a flow direction of a gas flowing on the substrate. Therefore, uniformity of a deposited film is improved, compared with the conventional lateral flow ALD apparatus in which a supplied source gas and reaction gas constantly flow in only one direction on the substrate.

Abstract: A susceptor includes a ceramic substrate having a wafer-placing surface; a first circular RF electrode buried in the ceramic substrate; and a second circular RF electrode buried in the ceramic substrate at a depth different from the depth of the first RF electrode. The second RF electrode has a larger diameter than the first RF electrode. The second RF electrode has a plurality of holes with an opening area of 9.42 to 25.13 mm2 distributed in a portion overlapping the first RF electrode in a plan view of the ceramic substrate. The electrode width between the holes is 3 to 7 mm.

Abstract: Described is a linear batch CVD system that includes a deposition chamber, one or more substrate carriers, gas injectors and a heating system. Each substrate carrier is disposed in the deposition chamber and has at least one receptacle configured to receive a substrate. The substrate carriers are configured to hold substrates in a linear configuration. Each gas injector includes a port configured to supply a gas in a uniform distribution across one or more of the substrates. The heating system includes at least one heating element and a heating control module for uniformly controlling a temperature of the substrates. The system is suitable for high volume CVD processing of substrates. The narrow width of the deposition chamber enables a uniform distribution of precursor gases across the substrates along the length of the reaction chamber and permits a greater number of substrates to be processed in comparison to conventional deposition chambers.

Abstract: Apparatus for atomic layer deposition on a surface of a sheeted substrate, comprising: an injector head comprising a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; a gas bearing comprising a bearing gas injector, arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; a conveying system providing relative movement of the substrate and the injector head along a plane of the substrate to form a conveying plane along which the substrate is conveyed.

Abstract: A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap.

Abstract: An inline vacuum processing apparatus includes a deposition unit, a process execution unit, a determination unit, and a control unit. The deposition unit causes one deposition chamber of a first deposition chamber and a second deposition chamber to execute a deposition process. The process execution unit causes the other deposition chamber to execute a process necessary for the deposition process. The determination unit measures the number of substrates processed in one deposition chamber and determines whether all substrates included in a first lot have undergone the deposition process. The control unit switches, based on a determination result from the determination unit, a process to be executed in each of the first deposition chamber and the second deposition chamber.

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

Abstract: In an disclosed film deposition method, after a film deposition-alteration step is carried out that includes a film deposition process where a Si containing gas is adsorbed on a wafer W and the adsorbed Si containing gas on the wafer is oxidized by supplying an O3 gas to the upper surface of the wafer, thereby producing a silicon oxide layer(s) by rotating a turntable on which the wafer is placed, and an alteration process where the silicon oxide layers) is altered by plasma, an alteration step where the silicon oxide layer(s) is altered by plasma while the Si containing gas is not supplied.

Abstract: Substrate processing including correction for deposition location is described, including a combinatorial processing chamber that incorporates the correction. The combinatorial processing chamber can be used to process multiple regions of a substrate using different processing parameters on different regions. For example, one region can have one material deposited on it and another region can have a different material deposited on it, although other combinations and variations are possible. The combinatorial processing chamber uses a rotating and revolving substrate pedestal to be able to deposit on all locations or positions on a substrate. The combinatorial processing chamber uses a correction factor that accounts for variations in alignment and/or configuration of the processing chamber so that the actual location of deposition of a region is approximately the same as a desired location of deposition.

Abstract: A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate.

Abstract: An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates (14) within a vacuum vessel (10). A dome shaped holder (12) is disposed within the vacuum vessel (10) and holds the substrates (14). A drive rotates the dome shaped holder (12). A vapor depositing source (34) is disposed oppositely to the substrates (14). An ion source (38) irradiates ions to the substrates (14). A neutralizer (40) irradiates electrons to the substrates (14). The ion source (38) is disposed at an angle between an axis, along which ions are irradiated from the ion source (38), and a line perpendicular to a surface of each of the substrates (14). The angle is between 8° inclusive and 40° inclusive. A ratio of a distance in a vertical direction between (i) a center of rotational axis of the dome shaped holder (12), and (ii) a center of the ion source (38), relative to a diameter of the dome shaped holder (12), is between 0.

Abstract: Provided is a continuous deposition apparatus wherein replacement operations of a feeding unit and a take-up unit are easily performed. The continuous deposition apparatus is provided with: a vacuum chamber (1); a deposition roller (2); evaporation sources (7L1, 7L2, 7R) which supply a deposition material to a film substrate from the side of the film substrate which is wound on the deposition roller and on which a coating is to be deposited; a feeding unit (3) which supplies the film substrate to the deposition roller (2); and a take-up unit (4) which takes up the film substrate after the coating is deposited thereon.

Abstract: Systems and methods of imaging and repairing defects on and below the surface of an integrated circuit (IC) are described. The method may be used in areas as small as one micron in diameter, and may remove the topmost material in the small spot, repeating with various layers, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected surface location. The surface has an added layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, and the energetic beam disassociates the reactive material in the region of the beam into radicals that chemically attack the surface. After the defect location is exposed, the method uses the energetic beam to etch undesired materials, and deposit various appropriate materials to fill gaps, and restore the IC to an operational condition.

Abstract: A substrate processing apparatus includes a heating unit that heats a processing chamber that processes a plurality of substrates and that quickly cools the processing chamber after the processing. The heating unit includes a body having an intake port and an exhaust port, one or more heaters located inside the body, a cooler connected to the intake port of the body, an exhaust pump connected to the exhaust port of the body, and a controller controlling the cooler. The substrate processing apparatus includes a boat in which a plurality of substrates are stacked, a processing chamber providing a space in which the substrates are processed, a transfer unit carrying the boat into or out of the processing chamber, and the heating unit located outside the processing chamber.

Abstract: A method and system for plasma-assisted thin film vapor deposition on a substrate is described. The system includes a process chamber including a first process space having a first volume, a substrate stage coupled to the process chamber and configured to support a substrate and expose the substrate to the first process space, a plasma generation system coupled to the process chamber and configured to generate plasma in at least a portion of the first process space, and a vacuum pumping system coupled to the process chamber and configured to evacuate at least a portion of the first process space. The system further includes a process volume adjustment mechanism coupled to the process chamber and configured to create a second process space that includes at least a part of the first process space and that has a second volume less than the first volume, the substrate being exposed to the second process space.

Abstract: A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate to be processed, a holding stage which is disposed in the processing container and holds thereon the substrate to be processed, a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, and a reactive gas supply unit which supplies a reactive gas for plasma processing toward the central region of the substrate to be processed held by the holding stage. Here, the reactive gas supply unit includes an injector base, which is disposed at a location more recessed inside the dielectric plate than a wall surface of the dielectric plate facing the holding stage. A supply hole, which supplies a reactive gas for plasma processing into the processing container, is formed in the injector base.

Abstract: A deposition apparatus according to an exemplary embodiment of the present invention is a lateral-flow deposition apparatus in which in which a process gas flows between a surface where a substrate is disposed and the opposite surface, substantially in parallel with the substrate. The lateral-flow deposition apparatus includes: a substrate support that moves up/down and rotates the substrate while supporting the substrate; a reactor cover that defines a reaction chamber by contacting the substrate support; and a substrate support lifter and a substrate support rotator that move the substrate support.

Abstract: A vapor deposition device includes a base, a hollow rod, a bracket, four bearing seats, and an ion source. The base defines a through hole and four grooves in one surface thereof. The hollow rod is inserted in the through hole and defines four vents in the circumferential direction thereof. The vents point to the upper space of the grooves correspondingly. The hollow rod includes a closed end and an opposite opened end. The bracket is connected to the closed end. The bearing seats are fixed to the bracket so that the bearing seats face the grooves respectively. The ion source is coupled to the opened end. Ions emitted by the ion source are guided by the hollow rod to the vents and the upper spaces of the grooves respectively.