Abstract: A susceptor can include a generally circular shape and may include an inner and outer susceptor. The outer susceptor can include a support region having one or more support mechanisms as well as a channel region extending from the region boundary to an outer radial boundary radially inward of an outer edge of the susceptor, the channel region can include a plurality of channels extending radially from the region boundary to the outer radial boundary. The inner susceptor can include a second plurality of channels extending from the inner radial boundary to an edge of the inner susceptor.

Abstract: Embodiments of substrate supports and process chambers equipped with the same are provided. In some embodiments, a substrate support includes: a support body having a first surface; one or more receptacles extending through the first surface and into the support body; and one or more protrusions respectively disposed within corresponding ones of the one or more receptacles and projecting from the first surface, wherein the one or more protrusions at least partially define a substantially planar support surface above the first surface. Methods of eliminating backside wafer damage are also disclosed.

Abstract: The present disclosure provides a magazine supporting equipment for supporting a magazine with multiple input ports. The magazine supporting equipment comprises a contact plate, a first sidewall plate, and a second sidewall plate. The contact plate is in contact with the magazine. The first sidewall plate extends vertically from one end of the contact plate. The second sidewall plate parallel is to the first sidewall plate and extends vertically from one end to the other end of the contact plate. The first sidewall plate extends along at least a part of a first sidewall of the magazine. The second sidewall plate extends along at least a part of a second sidewall of the magazine. The first sidewall plate and the second sidewall plate include control openings through which gas flows in and out.

Abstract: An electrostatic chuck is described that has radio frequency coupling suitable for use in high power plasma environments. In some examples, the chuck includes a base plate, a top plate, a first electrode in the top plate proximate the top surface of the top plate to electrostatically grip a workpiece, and a second electrode in the top plate spaced apart from the first electrode, the first and second electrodes being coupled to a power supply to electrostatically charge the first electrode.

Abstract: There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed, a first utility system including a first supply system which supplies a first processing gas into the first process container and a surface of the first utility system is connected or arranged close to the first processing module; and a first vacuum pump arranged at the same level as a first exhaust port of the first process container. The first vacuum pump exhausts an inside of the first process container and includes a first intake port formed laterally at a position substantially facing the first exhaust port of the first process container. A first exhaust pipe configured to substantially linearly bring the first exhaust port into fluid communication with the first intake port and including a first valve installed in a flow path.

Abstract: Aspects of the present disclosure relate to apparatus, systems, and methods of measuring edge ring distance for thermal processing chambers. In one example, the distance measured is used to determine a center position shift of the edge ring.

Abstract: A support unit provided in an apparatus for treating a substrate using plasma includes a dielectric plate on which the substrate is placed, an electrode plate disposed under the dielectric plate, a power supply rod that applies power to the electrode plate, and a flange that has a shape surrounding the power supply rod and that is spaced apart from the power supply rod.

Abstract: Embodiments of a process kit are provided herein. In some embodiments, a process kit for use in a substrate processing chamber includes: a ceramic ring having an upper surface and a lower surface, wherein the ceramic ring includes a chucking electrode disposed in the ceramic ring and a heating element disposed in the ceramic ring; and an edge ring disposed on the ceramic ring.

Abstract: The inventive concept relates to an apparatus and a method for processing a substrate. In an embodiment, the apparatus includes a process chamber having a processing space inside, a support unit that supports the substrate in the processing space, a gas supply unit that supplies a process gas into the processing space, and a plasma source that generates plasma from the process gas. The support unit includes a support on which the substrate is placed, an edge ring around the substrate placed on the support, an impedance adjustment member provided below the edge ring, and a temperature adjustment member that variably adjusts temperature of the impedance adjustment member.

Abstract: A substrate support includes an electrostatic chuck having an upper surface, and a cover positioned on the electrostatic chuck to cover the upper surface thereof. The cover includes a first face adjacent the upper surface of the electrostatic chuck, a second face for supporting a substrate, and one or more conduits extending through the cover to permit a cooling gas to flow from the second face to the first face. The cover is made from a dielectric material.

Abstract: A substrate retaining apparatus, a load lock assembly comprising the substrate retaining apparatus, and a system including the substrate retaining apparatus are disclosed. The substrate retaining apparatus can include at least one sidewall and one or more heat shields. One or more of the at least one sidewall can include a cooling fluid conduit to facilitate cooling of substrates retained by the substrate retaining apparatus. Additionally or alternatively, one or more of the at least one sidewall can include a gas conduit to provide gas to a surface of a retained substrate.

Abstract: A component comprises a film containing yttrium oxide. A cross section of the film has a first portion, a second portion, and a third portion, and the first to third portions are separated from each other by 0.5 mm or more. A Vickers hardness B1 measured in the first portion, a Vickers hardness B2 measured in the second portion, a Vickers hardness B3 measured in the third portion, and an average value A of the Vickers hardnesses B1 to B3 are numbers satisfying 0.8A?B1?1.2A, 0.8A?B2?1.2A, and 0.8A?B3?1.2A.

Abstract: According to one embodiment, an edge ring is provided which includes a first movable portion provided along an outer circumference of a support portion having an upper surface capable of holding a semiconductor substrate thereon, the first movable portion being movable in a direction perpendicular to the upper surface; a second movable portion provided along an outer circumference of the first movable portion, the second movable portion being movable in the direction; and a driving portion capable of moving the first movable portion in the direction by way of the second movable portion.

Abstract: In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.

Abstract: There is provided a technique that includes abnormality detecting by picking up a sound generated from a transfer configured to be capable of transporting the substrate and comparing a waveform of sound data with a preset threshold value to detect an abnormality of the transfer; and failure detecting by picking up vibration of the transfer and comparing a waveform of vibration data with a preset threshold value to detect a failure of the transfer.

Abstract: According to one embodiment, an electrostatic chuck apparatus includes a substrate support plate formed of a dielectric material. The substrate support plate includes: a plurality of support bases protruding from an upper surface of the substrate support plate, a plurality of ground electrodes formed inside the substrate support plate, each of the ground electrodes at a corresponding position to a respective one the support bases, and an electrostatic chuck electrode provided below the ground electrodes.

Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module.

Abstract: Provided is plasma processing equipment comprising a substrate support, a focus ring disposed along an edge of the upper surface of the substrate support and including a fluid hole passing through a main body, an insulating ring surrounding an outer sidewall of the substrate support and including an inner side surface facing the outer sidewall of the substrate support, an outer side surface, and an upper surface connecting the inner and outer side surfaces, and including upper and lower end portions having different heights, and a connection end portion connecting the upper and lower end portions, a liner surrounding the outer side surface of the insulating ring and a baffle disposed on an upper surface of the liner, wherein a fluid passing through the fluid hole flows along the upper surface, and the baffle generates a pressure difference of the fluid between the upper and lower end portions.

Abstract: A substrate support for a plasma processing apparatus includes a first support area configured to support a substrate placed thereon; and a second support area configured to support a focus ring placed thereon. The second support area includes a lower electrode, a chuck area, and a bonding area. The chuck area includes a first electrode and a second electrode, and is configured to hold the focus ring by a potential difference set between the first electrode and the second electrode. The first electrode and the second electrode extend in the circumferential direction, and the first electrode is provided inward in the radial direction with respect to the second electrode. The substrate support further includes a first conducting wire and a second conducting wire each extending around a center or on the center between an inner boundary and an outer boundary of the second support area.

Abstract: A first edge ring for a substrate support is provided. The first edge ring includes an annular-shaped body and one or more lift pin receiving elements. The annular-shaped body is sized and shaped to surround an upper portion of the substrate support. The annular-shaped body defines an upper surface, a lower surface, a radially inner surface, and a radially outer surface. The one or more lift pin receiving elements are disposed along the lower surface of the annular-shaped body and sized and shaped to receive and provide kinematic coupling with top ends respectively of three or more lift pins.