Abstract: An exposure method and apparatus simultaneously transfer patterns with various pitches with high resolution. On the pupil surface of an illumination system, nine areas are set. The nine areas are a first area including the optical axis, four second areas each smaller than the first area and arranged along a first circumference surrounding the first area, and four third areas each smaller than the first area and arranged along a second circumference surrounding the first circumference and arranged along a second circumference. The distribution of intensity of light over the pupil surface is so set that the intensities of light over the nine areas are approximately equal to one another, and the intensity of light over the other area is smaller than those over the nine areas. This distribution of intensity of light is set using a diffraction optical element or a diaphragm.

Abstract: Methods and apparatuses for configuring radiation used in microlithographic processing of workpieces are disclosed herein. One particular embodiment of such a method comprises directing a radiation beam along a radiation path from a reticle to an adjustment structure. The radiation beam has a wavefront with a first configuration in an image plane generally transverse to the radiation path. The method continues by changing at least one independently controllable parameter of the adjustment structure to change the wavefront of the radiation beam from the first configuration to a second configuration. After changing the shape of the wavefront from the first configuration to the second configuration, the method continues by impinging the radiation beam on the workpiece.

Abstract: A method of focus variation is described herein to achieve a one-step exposure of a wafer without the limitation of applying a complex y-tilt to a wafer stage. The position of the wafer surface to be exposed is periodically varied with respect to the focal plane, or vice versa. This relative movement between the focal plane, or best focus position along the optical axis and the wafer stage, or the wafer surface, is achieved by applying a movement to at least one of the reticle stage, one or more of the optical elements of the projection lens, and the wafer stage. The frequency of the movement is selected in dependence of the laser frequency (upper limit) or the scanning frequency (lower limit).

Abstract: This invention generally relates to an exposure apparatus and an exposure method using EUV light. In one preferred form of the present invention, the exposure apparatus is arranged to expose a substrate to a pattern of an original by use of extreme ultraviolet light, and it includes a blaze type diffraction grating disposed so that light from a plasma light source is incident thereon, and an optical system for directing extreme ultraviolet light from the blaze type diffraction grating to at least one of the original and the substrate.

Abstract: An illumination optical system for, when installed in an exposure system, realizing a suitable illumination condition by varying the polarized state of the illumination light according to the pattern characteristics of the mask while suppressing the loss of the intensity of the light. The illumination optical system has a light source unit for supplying a linearly polarized light for illuminating surfaces to be illuminated therewith, and a polarized state changing device for changing the polarized state of the illuminating light from a predetermined polarized state to a nonpolarized state and vice versa. The polarized state changing device is arranged in the optical path between the light source unit and the surfaces to be illuminated. The polarized state changing device can be removed from the illumination optical path and has a depolarizer for selectively depolarizing the incident linearly polarized light.

Abstract: The invention pertains to a lithographic apparatus that includes a docking system for positioning a patterning device, such as a reticle, relative to the reticle stage. The lithographic projection apparatus has an operational cycle that includes a projection phase, in which the reticle stage carries the patterning device and an exchange phase, in which the patterning device is exchanged and the docking system positions the patterning device relative to the reticle stage. The docking system is configured to be spaced from the patterning device during the projection phase in order to ensure that a higher accuracy of the projected image is obtained.

Abstract: In order to improve the productivity of a lithographic apparatus, a stage apparatus for holding two patterning devices is described. The patterning devices are arranged such that the distance between the patterns in the scanning direction corresponds to the length of the pattern in the scanning direction. By doing so, an improved exposure sequence may be performed by exposing a first die with a first pattern, skipping a second die adjacent to the first die, and exposing a third die adjacent to the second die using a second pattern.

Abstract: An exposure apparatus for transferring an image to a device includes an optical assembly, an immersion fluid system, and a device stage assembly. The optical assembly is positioned so that there is a gap above the device. The immersion fluid system fills the gap with an immersion fluid. The device stage assembly includes a sloped region that facilitates movement of the immersion fluid that exits the gap away from the device. The device stage assembly can include a collection region and a recovery system that recovers immersion fluid from the collection region.

Abstract: Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.

Abstract: In view of stably forming resist patterns with an excellent resolution, a light exposure apparatus 100 comprises a light source 101 irradiating a mask 102 with light, a projection optical system 103 projecting an image of the mask 102 onto a wafer 110, and a liquid supply unit 105 filling a liquid medium 109 between the projection optical system 103 and the wafer 110. A saturated cyclic hydrocarbon or its derivative is used as the liquid medium 109.

Abstract: A lithographic projection apparatus includes a liquid confinement structure extending along at least a part of a boundary of a space between a projection system and a substrate table. The liquid confinement structure is positioned adjacent a final surface of the projection system and includes a first inlet configured to supply a liquid, through which a patterned beam is to be projected, to the space, and a second inlet configured to supply gas and formed in a face of the structure. The face is arranged to oppose a surface of the substrate and the second inlet is located radially outward, with respect to an optical axis of the projection system, of the space and has a porous member to evenly distribute gas flow over an area of the second inlet.

Abstract: An exposure apparatus for exposing a pattern of a mask onto a plate to be exposed, the exposure apparatus includes a cleaning apparatus for cleaning the mask. The cleaning apparatus includes an irradiating part for irradiating a laser beam to the mask, and a polarization controller for controlling a polarization characteristic of the laser beam according to a longitudinal direction of the pattern.

Abstract: A shutter device includes a stationary plate having a plurality of driving electrodes movable element opposes the stationary plate and including a sheet subjected to an electret-forming process. A drive control unit for moving the movable element using variation in electrostatic force, thereby shielding light. The electrostatic force is generated between constant charges held in the movable element as a result of the electret-forming process, and charges generated in each of the driving electrodes when a voltage is applied to each driving electrode. The generated electrostatic force is varied by varying the voltage applied to each driving electrode.

Abstract: A system and method include an object supported on a moveable support, an optical system that transmits radiation onto the object, a support having an aperture therethrough, a sensor system coupled to the support, and a control system coupled to the sensor system and the moveable support. The sensor system is arranged with respect to the aperture to measure a surface of the object and send measurement signals to the control system, such that the control system generates control signals received and used by the moveable support to ensure that the surface of the object receiving light transmitted by the optical system through the aperture is in a focus plane of the optical system.

Abstract: A method for arranging a semiconductor wafer within a photolithography tool and methods for processing a semiconductor wafer employing such an arrangement process are provided. The arrangement process includes positioning a semiconductor wafer on a stage in a pre-alignment unit of a photolithography tool such that a crystal orientation marker of the wafer is located at a first radial position. Thereafter, the wafer is moved to an exposure unit of the photolithography tool. During one or both of such steps, the semiconductor wafer is rotated such that the crystal orientation marker is relocated to a second, distinct radial position prior to arranging the wafer upon a stage of the exposure unit. In particular, the semiconductor wafer is rotated greater than approximately 10° and less than approximately 170° relative to the first radial position. The arrangement process is performed for lithography processes conducted during fabrication of a semiconductor device.

Abstract: The aligning of a wafer with a reticle in photolithographic equipment is carried out using a feed forward method. In the method, a wafer is loaded onto an exposure apparatus, the wafer is aligned with a reticle, the state of alignment is measured, alignment data representative of the state of alignment is produced, and a database is searched for an alignment data type under which the alignment data falls. The database may also be searched for overlay data related to the alignment data. A correction value matched to the alignment data type is obtained. The correction value maybe calculated from the overlay data. The alignment of the wafer is corrected by applying the correction value to the alignment data. Finally, the aligned wafer is exposed.

Abstract: A method for modeling a photolithography process which includes the steps of generating a calibrated model of the photolithography process capable of estimating an image to be produced by the photolithography process when utilized to image a mask pattern containing a plurality features; and determining an operational window of the calibrated model, which defines whether or not the calibrated model can accurately estimate the image to be produced by a given feature in the mask pattern.

Abstract: A fluid control system for immersion lithography that uses an optical member such as a lens, a workpiece such as a semiconductor wafer with a surface disposed opposite to the optical member with a gap in between, includes a fluid-supplying device for providing an immersion fluid such as water to a specified exposure area in the gap, and a fluid control device that activates a force on the fluid so that the immersion fluid is retained in the exposure area and its vicinity at least while the immersion lithography operation is being carried out. A pressured gas may be caused to apply a hydrodynamic force on the fluid to keep it in its place.

Abstract: A simulator of a lithography tool includes a correcting parameter memory storing a correcting scaling value to correct a focus error of a projection optical system in the lithography tool and a correcting bias to correct a critical dimension error generated in the lithography tool. A model simulation engine simulates an image formation under a corrected focus calculated by multiplying a defocus of the projection optical system by the correcting scaling value to model a calculated critical dimension of an image. A bias corrector adds the correcting bias to the calculated critical dimension to correct the image.

Abstract: A method for evaluating a local flare in an exposure tool, includes: measuring a projection light intensity distribution by transferring a monitor mask pattern onto a semiconductor substrate; calculating a first ratio between an illumination light intensity on the monitor mask pattern and a first projection light intensity calculated based on the monitor mask pattern; calculating a distribution function of a local flare, due to a mask pattern coverage of the monitor mask pattern, based on the first ratio and the projection light intensity distribution; dividing a design mask pattern into a plurality of unit areas; calculating a second ratio between the illumination light intensity on each of the unit areas and a second projection light intensity calculated based on the design mask pattern; and calculating a local flare intensity in each of the unit areas, based on the second ratio and the distribution function.