Abstract: Provided is a method of producing multiple particulates, the method comprising: (a) dispersing multiple primary particles of an anode active material, having a particle size from 2 nm to 20 ?m, and particles of a polymer foam material, having a particle size from 50 nm to 20 ?m, and an optional adhesive or binder in a liquid medium to form a slurry; and (b) shaping the slurry and removing the liquid medium to form the multiple particulates having a diameter from 100 nm to 50 ?m; wherein at least one of the multiple particulates comprises a polymer foam material having pores and a single or a plurality of the primary particles embedded in or in contact with the polymer foam material, wherein the primary particles have a total solid volume Va, and the pores have a total pore volume Vp, and the volume ratio Vp/Va is from 0.1/1.0 to 10/1.

Abstract: The instant disclosure provides a method for manufacturing an electroless plating substrate and a method for forming a metal layer on a surface of a substrate. The method for preparing the electroless plating substrate includes: providing a substrate; attaching a self-adsorbed catalyst composition to a surface of the substrate; and performing an electroless metal deposition for forming an electroless metal layer on the surface of the substrate. The self-adsorbed catalyst composition includes a colloidal nanoparticle and a silane compound. The colloidal nanoparticle includes a palladium nanoparticle and a capping agent enclosing the palladium nanoparticle. The silane compound has at least one amino group to interact with the colloidal nanoparticle. A covalent bond between the silane compound and the surface of the substrate is formed through the at least one silane group of the silane compound. The colloid nanoparticle has a particle size ranging from 5 to 10 nanometers.

Abstract: A method includes: 1) performing an atomic layer deposition cycle including (a) introducing precursors into a deposition chamber housing a substrate to deposit a material on the substrate; and (b) introducing a passivation gas into the deposition chamber to passivate a surface of the material; and 2) repeating 1) a plurality of times to form a film of the material.

Abstract: A manufacturing method that enables an electrode to be formed on a specific portion of a surface of a sintered ceramic body by a simple technique. A method of manufacturing a ceramic electronic component includes preparing a sintered ceramic body that contains a metal oxide, and forming low-resistance portions that is formed by reducing the resistance of portions of the ceramic body by radiating laser onto electrode-formation regions of surfaces of the ceramic body. The method further includes causing a catalytic metal to selectively adhere to the low-resistance portions by immersing the ceramic body, in which the low-resistance portions have been formed, in a catalytic metal substitution treatment solution, and forming a plating layer that serves as an electrode onto the low-resistance portions by performing electroless plating on the ceramic body to which the catalytic metal has adhered.

Abstract: A method for producing an electrode sheet includes a first feeding process, a roll press process, and a second feeding process, which are performed in this order. At least one of a first tension per unit area obtained by dividing a tension applied to the electrode sheet in a longitudinal direction in the first feeding process by a cross-sectional area of the electrode sheet being fed in the first feeding process and a second tension per unit area obtained by dividing a tension applied to the electrode sheet in a longitudinal direction in the second feeding process by a cross-sectional area of the electrode sheet being fed in the second feeding process is 5.0 MPa or less.

Abstract: A foamed, opacifying element useful as a light-blocking article is prepared with a dry opacifying layer on a substrate. The dry opacifying layer is densified, followed by application of a functional composition formulation to form a functional composition upon drying and curing at a coverage of 0.5-15 g/m2. The functional composition comprises at least: (i) glass particles such as hollow glass particles at a coverage of 0.1-2.2 g/cm2, and can also include any or combination of a (iv) water-soluble or water-dispersible organic polymeric binder that may be crosslinked, thickeners, coating aids having an HLB of at least 5, (ii) lubricants, (iii) tinting materials, and (v) crosslinking agents. Among other properties, the presence of the glass particles provides additional heat absorption for the foamed, opacifying elements that can be formed into light-blocking materials.

Abstract: A method of forming a carbon hard mask includes generating a radio frequency plasma including carbon-based ions by supplying continuous wave radio frequency power to a plasma processing chamber. The carbon-based ions have a first average ion energy. The method further includes adjusting the first average ion energy of the carbon-based ions to a second average ion energy by supplying continuous wave direct current power to the plasma processing chamber concurrently with the continuous wave radio frequency power and forming a carbon hard mask at a substrate within the plasma processing chamber by delivering the carbon-based ions having the second average ion energy to the substrate.

Abstract: There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.

Abstract: A method for processing an electrode sheet, wherein the electrode sheet has a carrier layer and an electrode material that is applied to the carrier layer only in a material region of the electrode sheet, so that a free region, which is free of electrode material, remains for the formation of diverters, wherein the electrode sheet is guided in a conveying direction by a processing device, so that the material region and the free region (run side by side, wherein the processing device has a calender through which the electrode sheet is guided and with which the material region is calendered, wherein the processing device additionally has at least one roller that is designed in such a way that it exerts a transverse tensile stress on the electrode sheet. A corresponding processing device is also specified.

Abstract: Embodiments described herein provide a gas supply system for reducing purge time and increasing processing throughput, and an atomic layer deposition (ALD) chamber having the same. The gas supply system includes an inert gas line and a precursor supply line. The inert gas line is configured to be coupled to an inlet of the chamber separate from the precursor supply line. Therefore, the inert gas is supplied concurrently to the precursor supply line and the processing region of the chamber such that total purge time is reduced. The reduction of the total purge time due to the gas supply system increases purge efficiency and increases processing throughput. Furthermore, the gas supply system allows inert gas to be utilized as a dilution gas during flow of precursors.

Abstract: A substrate processing method capable of achieving uniform etch selectivity in the entire thickness range of a thin film formed on a stepped structure includes: forming a thin film on a substrate by performing a plurality of cycles including forming at least one layer and applying plasma to the at least one layer under a first process condition; and applying plasma to the thin film under a second process condition different from the first process condition.

Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.

Abstract: A power storage device and an applicator is obtained that achieve an increase in capacity and an improvement in productivity, and that enable the thickness of a mixture layer to be inhibited from varying. A positive electrode mixture slurry is discharged into discharge regions of a belt-like positive electrode current collector that extend in a length direction of the positive electrode current collector from discharge nozzles corresponding to the respective discharge regions to form a positive electrode mixture layer on the positive electrode current collector. The discharge regions are arranged such that a part of each of the discharge regions overlaps a part of another of the discharge regions adjacent thereto when viewed in the length direction to form overlapping portions. The positive electrode mixture slurry is intermittently discharged to form an exposed portion on at least one of the discharge regions.

Abstract: There is provided a plasma annealing device that can change the crystal structure of a film by processing the film (coating) on a substrate and that has excellent productivity. A method for producing a film includes step (A) irradiating a film on a substrate with atmospheric pressure plasma, wherein the crystal structure of a constituent of the film is changed. The step (A) may include generating plasma under atmospheric pressure by energization at a frequency of 10 hertz to 100 megahertz and a voltage of 60 volts to 1,000,000 volts, and directly irradiating the film on the substrate with the generated plasma. A method for changing a crystal structure of a constituent of a film includes step (A). A plasma generation device used in step (A). An electronic device produced through step (A).

Abstract: An automated process for producing exposed electrical contact areas on the conductor part of an epoxy coated bus bar. When the epoxy coating is in the glassy state, one can safely and economically, preferably via automated apparatus, put the epoxy into the rubbery state by positioning the bar and applying localized heat at a select area of the coating; monitoring the heating to above the glass transition temperature of the epoxy, bringing cutting tools into contact with the epoxy for cutting and removing the rubbery coating away from the bus bar, and cooling the bus bar to bring adjacent coating back to the glassy state, thereby leaving an exposed electrical contact area of conductor on the bus bar with little or no surface damage.

Abstract: A method for manufacturing a mask may include the following steps: preparing a substrate; providing a first coating, which may be optically transparent, may cover a covered portion of the substrate, and may expose exposed portions of the substrate; forming a scattering layer between the first coating layer and the covered portion of the substrate; and removing the exposed portions of the substrate to form mask holes.

Abstract: Methods of depositing uniform films on substrates using multi-cyclic atomic layer deposition techniques are described. Methods involve varying one or more parameter values from cycle to cycle to tailor the deposition profile. For example, some methods involve repeating a first ALD cycle using a first carrier gas flow rate during precursor exposure and a second ALD cycle using a second carrier gas flow rate during precursor exposure. Some methods involve repeating a first ALD cycle using a first duration of precursor exposure and a second ALD cycle using a second duration of precursor exposure.

Abstract: Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.

Abstract: A method for manufacturing a display device according to an exemplary embodiment of the present inventive concept includes: forming a digitizer assembly; and attaching the digitizer assembly to a bottom of a display panel, wherein the forming the digitizer assembly comprises forming through-hole portions in a heat dissipation sheet layer, forming a digitizer board by sequentially attaching a buffering sheet layer, a digitizer layer, a shield sheet layer, and the heat dissipation sheet layer, and forming a plurality of digitizer assemblies by cutting the digitizer board, wherein the through-hole portions partially expose the shield sheet layer and are disposed at corners of the digitizer assembly.

Abstract: A thin film deposition method with respect to a substrate including a pattern structure includes supplying RF power through a component disposed below a substrate, forming a potential on an exposed surface of the substrate exposed to a reaction space, moving the active species to the exposed surface in the reaction space using the potential, and forming a thin film including active species component on the exposed surface of the substrate.