Abstract: Exemplary processing methods may include translating a lithium film beneath a first showerhead. The methods may include introducing an oxidizer gas through the first showerhead onto the lithium film. The methods may include forming an oxide monolayer on the lithium film. The oxide monolayer may be or include the oxidizer gas adsorbed on the lithium film. The methods may include translating the lithium film beneath a second showerhead after forming the oxide monolayer. The methods may include introducing a carbon source gas through the first showerhead onto the lithium film. The methods may also include converting the oxide monolayer into a carbonate passivation layer through reaction of the oxide monolayer with the carbon source gas.

Abstract: Methods for forming phosphosilicate glass layers are disclosed. Exemplary methods include forming a silicon-containing layer overlying the substrate and depositing a phosphorus-containing layer overlying the substrate. The deposited phosphorus-containing layer can include P2O3 and/or exhibit a melting temperature less than or equal to 500° C. The deposited phosphorus-containing layer can be heated to flow and oxidized to provide desired properties.

Abstract: A method may include providing a fluid material, solidifying the fluid material, providing a substrate, and depositing the solidified fluid material on the substrate. Providing the fluid material may include providing a mold, and filling the mold with the fluid material. Solidifying the fluid material may include solidifying the fluid material in a mold, and removing the solidified fluid material from the mold. Providing the substrate may include preparing the substrate for deposition of the solidified fluid material, and adjusting the temperature of the substrate. Depositing the solidified fluid material on the substrate may include fixturing the substrate, and loading the solidified fluid material in a deposition tool. The fluid material may include a liquid phase component, and a solid phase component. The solid phase component may include particles suspended in the liquid phase component. The liquid phase component may include a gallium alloy.

Abstract: A method for depositing Parylene onto a substrate includes operating a first pyrolysis chamber at a first set of parameters to cause cracking of dimers into monomers at the first set of parameters and operating a second pyrolysis chamber at a second set of parameters to cause cracking of dimers into monomers at the second set of parameters. The method includes mixing the monomers at the first set of parameters with monomers at the second set of parameters together and polymerizing the mixture as a protective coating.

Abstract: Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.

Abstract: A method is provided for making a multilayer functional fiber, where the method includes: providing a scaffold fiber; disposing a first electrode layer enclosing the scaffold fiber; disposing a functional layer enclosing the first electrode layer, the functional layer having a functional characteristic varying as a function of longitudinal position along the functional layer; disposing a second electrode layer enclosing the functional layer; and disposing a cladding layer enclosing the second electrode layer. In another aspect, a multilayer functional fiber is provided produced by, for instance, the above-noted method.

Abstract: Examples of the present technology include semiconductor processing methods that may include generating a plasma from a deposition precursor in a processing region of a semiconductor processing chamber. The plasma may be generated at a delivered power within a first period of time when plasma power is delivered from a power source operating at a first duty cycle. The methods may further include transitioning the power source from the first duty cycle to a second duty cycle after the first period of time. A layer may be deposited on a substrate in the processing region of the semiconductor processing chamber from the generated plasma. The layer, as deposited, may be characterized by a thickness of 50 ? or less. Exemplary deposition precursors may include one or more silicon-containing precursors, and an exemplary layer deposited on the substrate may include an amorphous silicon layer.

Abstract: Methods and systems for forming high aspect ratio features on a substrate are disclosed. Exemplary methods include forming a first carbon layer within a recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the methods or systems are also disclosed.

Abstract: In exemplary embodiment, a method of top-selective deposition using a flowable carbon-based film on a substrate having a recess defined by a top surface, sidewall, and a bottom, includes steps of: (i) depositing a flowable carbon-based film in the recess of the substrate in a reaction space until a thickness of the flowable carbon-based film in the recess reaches a predetermined thickness, and then stopping the deposition step; and (ii) exposing the carbon-based film to a nitrogen plasma in an atmosphere substantially devoid of hydrogen and oxygen so as to redeposit a carbon-based film selectively on the top surface.

Abstract: A method of producing a negative electrode, which includes: providing a negative electrode roll on which a negative electrode structure is wound, the negative electrode structure includes a negative electrode current collector and a negative electrode active material layer on at least one surface of the negative electrode current collector; providing a pre-lithiation bath containing a pre-lithiation solution, which is sequentially divided into an impregnation section, a pre-lithiation section, and an aging section; impregnating the negative electrode structure with the pre-lithiation solution while unwinding the negative electrode structure from the negative electrode roll and moving the same through the sections. The pre-lithiation is performed by disposing a lithium metal counter electrode, which is spaced apart from the negative electrode structure and impregnated with the pre-lithiation solution, in the pre-lithiation section and electrochemically charging the negative electrode structure.

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a first plasma treatment and subjecting the substrate to a second plasma treatment. Thus the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a material on the lower surface.

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.

Abstract: The present disclosure is directed to a showerhead for distributing plasma. The showerhead includes a perforated tile coupled to a support structure. A dielectric window is disposed over the perforated tile. An electrode is coupled to the dielectric window. An inductive coupler is disposed over the dielectric window. At least a portion of the inductive coupler is angled relative to at least a portion of the electrode.

Abstract: Methods and systems for forming a forming a nitrogen-containing carbon film and structures formed using the methods or systems are disclosed. Exemplary methods include providing a precursor with carbon-terminated carbon-nitrogen bonds. The methods can further include providing a reactant to the reaction chamber.

Abstract: A coating composition for application to a substrate utilizing a high transfer efficiency applicator. The coating composition includes a carrier, a binder, a corrosion inhibiting pigment. The coating composition has an Ohnesorge number (Oh) of from about 0.01 to about 12.6. The coating composition has a Reynolds number (Re) of from about 0.02 to about 6,200. The coating composition has a Deborah number (De) of from greater than 0 to about 1730.

Abstract: The electrode production method disclosed herein has the steps of: preparing an electrode mix paste that contains at least an active material and a solvent; applying the electrode mix paste onto the surface of a collector; and drying a coating film made up of the electrode mix paste applied on the collector. The step of drying includes a residual heat period, a constant rate drying period, and a falling rate drying period. The coating film is pressed at least one time in the falling rate drying period, and the pressing is carried out under conditions such that film thickness of the coating film is not lower than 80% relative to 100% as the film thickness prior to the pressing.

Abstract: Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.

Abstract: A method of manufacturing a detection sensor is disclosed. The method includes forming a biometric information sensing layer including a transistor on a base layer, forming an initial optical pattern layer on the biometric information sensing layer, patterning the initial optical pattern layer to form a plurality of transmissive portions spaced apart from each other and having a first zeta potential, coating a light blocking material to form an initial light blocking portion that covers a side surface and an upper surface of the transmissive portions and has a second zeta potential different from the first zeta potential, and polishing the initial light blocking portion such that the upper surface of the transmissive portions is exposed to form a light blocking portion. The initial light blocking portion is polished by the abrasive, which has the first zeta potential, using a pad.

Abstract: Provided is a method of producing multiple particulates, the method comprising: (a) dispersing multiple primary particles of an anode active material, having a particle size from 2 nm to 20 ?m, and particles of a polymer foam material, having a particle size from 50 nm to 20 ?m, and an optional adhesive or binder in a liquid medium to form a slurry; and (b) shaping the slurry and removing the liquid medium to form the multiple particulates having a diameter from 100 nm to 50 ?m; wherein at least one of the multiple particulates comprises a polymer foam material having pores and a single or a plurality of the primary particles embedded in or in contact with the polymer foam material, wherein the primary particles have a total solid volume Va, and the pores have a total pore volume Vp, and the volume ratio Vp/Va is from 0.1/1.0 to 10/1.

Abstract: The instant disclosure provides a method for manufacturing an electroless plating substrate and a method for forming a metal layer on a surface of a substrate. The method for preparing the electroless plating substrate includes: providing a substrate; attaching a self-adsorbed catalyst composition to a surface of the substrate; and performing an electroless metal deposition for forming an electroless metal layer on the surface of the substrate. The self-adsorbed catalyst composition includes a colloidal nanoparticle and a silane compound. The colloidal nanoparticle includes a palladium nanoparticle and a capping agent enclosing the palladium nanoparticle. The silane compound has at least one amino group to interact with the colloidal nanoparticle. A covalent bond between the silane compound and the surface of the substrate is formed through the at least one silane group of the silane compound. The colloid nanoparticle has a particle size ranging from 5 to 10 nanometers.