Patents Examined by Christopher G. Young
  • Patent number: 10606169
    Abstract: The purpose of the present invention is to provide: a pellicle frame which is not susceptible to deterioration even if irradiated with short-wavelength light such as excimer light, and which is not susceptible to generation of an outgas or foreign substance; and a pellicle which uses this pellicle frame. In order to achieve the above-described purpose, this pellicle frame for supporting the outer periphery of a pellicle film is configured to comprise a frame and a film that is formed on the surface of the frame and contains a polyimide resin.
    Type: Grant
    Filed: August 15, 2016
    Date of Patent: March 31, 2020
    Assignee: MITSUI CHEMICALS, INC.
    Inventors: Kazuo Kohmura, Takashi Kozeki, Daiki Taneichi, Shintaro Maekawa, Yosuke Ono, Tsuneaki Biyajima
  • Patent number: 10606164
    Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: March 31, 2020
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Hiroaki Shishido, Takenori Kajiwara
  • Patent number: 10606166
    Abstract: A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: March 31, 2020
    Assignee: HOYA CORPORATION
    Inventors: Takumi Kobayashi, Kazuhiro Hamamoto, Tatsuo Asakawa, Tsutomu Shoki
  • Patent number: 10599038
    Abstract: Provided are a rinsing liquid which is used for rinsing a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition and includes a hydrocarbon-based solvent having a branched alkyl group. The hydrocarbon-based solvent having a branched alkyl group contains at least one of isodecane or isododecane.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: March 24, 2020
    Assignee: FUJIFILM Corporation
    Inventors: Hideaki Tsubaki, Toru Tsuchihashi, Wataru Nihashi
  • Patent number: 10599031
    Abstract: A glass substrate for a mask blank includes a first surface and a second surface. The first surface and second surface face each other. Each of the first surface and the second surface is approximately square having a vertical length and a horizontal length being equal to the vertical length. The first surface of the glass substrate has specific profile properties.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: March 24, 2020
    Assignee: AGC Inc.
    Inventor: Yuzo Okamura
  • Patent number: 10571800
    Abstract: A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: February 25, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Derk Servatius Gertruda Brouns, Dennis De Graaf, Robertus Cornelis Martinus De Kruif, Paul Janssen, Matthias Kruizinga, Arnoud Willem Notenboom, Daniel Andrew Smith, Beatrijs Louise Marie-Joseph Katrien Verbrugge, James Norman Wiley
  • Patent number: 10562991
    Abstract: Provided is a pattern forming method including the successive steps of: a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive composition; an exposure step of exposing the resist film; a step of developing the exposed resist film using a developer, and a step of rinsing the developed resist film using a rinsing liquid containing an organic solvent. The developer includes a ketone-based or ether-based solvent having a branched alkyl group. The organic solvent contained in the rinsing liquid includes an ether-based solvent having a branched alkyl group.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: February 18, 2020
    Assignee: FUJIFILM Corporation
    Inventors: Hideaki Tsubaki, Toru Tsuchihashi, Wataru Nihashi
  • Patent number: 10564554
    Abstract: Embodiments of a method include: converting at least one image of a printed mask to a plurality of representative contours, each corresponding to mask patterns in the printed mask; determining whether the printed mask includes a printing defect based on whether the plurality of representative contours violates a set of contour tolerances for the printed mask; in response to at least one of plurality of representative contours violating at least one of the set of contour tolerances: identifying a location where a representative contour violates the at least one of the set of contour tolerances, and generating an instruction to adjust a layout for the printed mask, based on the violating of the at least one of the set of contour tolerances; and in response to none of the plurality of representative contours violating the set of contour tolerances, flagging a layout for the printed mask as compliant.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: February 18, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Liang Cao, Jed H. Rankin, Jie Zhang, Yulu Chen
  • Patent number: 10564537
    Abstract: A photomask blank including a transparent substrate, and at least one film (A) containing chromium and nitrogen and free of silicon and at least one film (B) containing silicon and oxygen, and free of a transition metal that are contacted to each other In the blank, when an intension of secondary ions is measured along a thickness direction of the films by a time-of-flight secondary ion mass spectrometry (TOF-SIMS), an intension of secondary ions derived from Cr2O5 is lower than an intension of secondary ions derived from SiN, at a position located at the interface or its vicinity of the film (A) and film (B) and having a maximum intensity of secondary ions derived from SiCrO5.
    Type: Grant
    Filed: December 12, 2017
    Date of Patent: February 18, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takuro Kosaka, Yukio Inazuki
  • Patent number: 10558129
    Abstract: A mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount is configured to suspend the pellicle frame relative to the patterning device such that there is a gap between the pellicle frame and the patterning device; and wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.
    Type: Grant
    Filed: November 16, 2015
    Date of Patent: February 11, 2020
    Assignees: ASML Netherlands B.V., ASML Holding N.V.
    Inventors: Matthias Kruizinga, Maarten Mathijs Marinus Jansen, Jorge Manuel Azeredo Lima, Erik Willem Bogaart, Derk Servatius Gertruda Brouns, Marc Bruijn, Richard Joseph Bruls, Jeroen Dekkers, Paul Janssen, Mohammad Reza Kamali, Ronald Harm Gunther Kramer, Robert Gabriël Maria Lansbergen, Martinus Hendrikus Antonius Leenders, Matthew Lipson, Erik Roelof Loopstra, Joseph H. Lyons, Stephen Roux, Gerrit Van Den Bosch, Sander Van Den Heijkant, Sandra Van Der Graaf, Frits Van Der Meulen, Jérôme François Sylvain Virgile Van Loo, Beatrijs Louise Marie-Joseph Katrien Verbrugge
  • Patent number: 10551732
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: February 4, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
  • Patent number: 10551734
    Abstract: A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: February 4, 2020
    Assignee: HOYA CORPORATION
    Inventors: Hiroaki Shishido, Osamu Nozawa, Takenori Kajiwara
  • Patent number: 10539886
    Abstract: A mask assembly suitable for use in a lithographic process. The mask assembly comprises a patterning device, a sub-frame secured to the patterning device, a pellicle frame configured to support a pellicle and a mechanical attachment interface operable to allow attachment of the pellicle frame to the sub-frame and detachment of the pellicle frame from the sub-frame.
    Type: Grant
    Filed: November 16, 2015
    Date of Patent: January 21, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Frits Van Der Meulen, Maarten Mathijs Marinus Jansen, Jorge Manuel Azeredo Lima, Derk Servatius Gertruda Brouns, Marc Bruijn, Jeroen Dekkers, Paul Janssen, Ronald Harm Gunther Kramer, Matthias Kruizinga, Robert Gabriël Maria Lansbergen, Martinus Hendrikus Antonius Leenders, Erik Roelof Loopstra, Gerrit Van Den Bosch, Jérôme François Sylvain Virgile Van Loo, Beatrijs Louise Marie-Joseph Katrien Verbrugge, Angelo Cesar Peter De Klerk, Jacobus Maria Dings, Maurice Leonardus Johannes Janssen, Roland Jacobus Johannes Kerstens, Martinus Jozef Maria Kesters, Michel Loos, Geert Middel, Silvester Matheus Reijnders, Frank Johannes Christiaan Theuerzeit, Anne Johannes Wilhelmus Van Lievenoogen
  • Patent number: 10539866
    Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: January 21, 2020
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Hiroaki Shishido, Kazuya Sakai
  • Patent number: 10539868
    Abstract: A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane, and the pellicle membrane may include nanocrystalline graphene. The nanocrystalline graphene may have defects. The nanocrystalline graphene may include a plurality of nanoscale crystal grains, and the nanoscale crystal grains may include a two-dimensional (2D) carbon structure having an aromatic ring structure. The defects of the nanocrystalline graphene may include at least one of an sp3 carbon atom, an oxygen atom, a nitrogen atom, or a carbon vacancy.
    Type: Grant
    Filed: November 8, 2017
    Date of Patent: January 21, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyeonjin Shin, Hyunjae Song, Seongjun Park, Keunwook Shin, Changseok Lee
  • Patent number: 10527953
    Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: January 7, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Kaustuve Bhattacharyya, Arie Jeffrey Den Boef, Martin Jacobus Johan Jak
  • Patent number: 10527930
    Abstract: The present invention discloses a design method of a sub resolution assist feature, which comprises the following steps of: S01: forming a sub resolution assist feature in the mask plate, the upper surface of the sub resolution assist feature is aligned with the upper surface of the mask plate; S02: forming a process pattern on one side, which contains the sub resolution assist feature, of the mask plate, the position of the process pattern is not superposed with the sub resolution assist feature in a vertical direction.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: January 7, 2020
    Assignee: SHANGHAI HUALI MICROELECTRONICS CORPORATION
    Inventors: Zhigang Chen, Junhan Liu
  • Patent number: 10527927
    Abstract: A conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 ?m×1 ?m of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA70?BA30)/(BD70?BD30) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: January 7, 2020
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Yoichi Usui
  • Patent number: 10520831
    Abstract: A technique enabling a stable resist pattern forming process, when substrate processing apparatuses that perform a resist coating process separately from a developing process. A wafer having been heated after a resist coating process in a first substrate processing apparatus is also heated before an exposure process in a second substrate processing apparatus. Thus, even when amine in an atmosphere adheres to the wafer while it is being transported from the first substrate processing apparatus to the second substrate processing apparatus, the amine scatters by the heating process. At least one of a heating time and a heating temperature is adjusted based on a substrate rest time which includes a period of time between a time point at which a FOUP 10 is unloaded from the first substrate processing apparatus and a time point at which the FOUP 10 is loaded into the second substrate processing apparatus.
    Type: Grant
    Filed: March 28, 2016
    Date of Patent: December 31, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Masashi Enomoto, Yoshihiro Kondo
  • Patent number: 10520808
    Abstract: Manufacturing methods are disclosed to produce DOE, HOE and Fresnel optical elements. These methods enable low cost manufacturing with high precision. The methods include lithography, roll-to-roll imprint and UV-casting.
    Type: Grant
    Filed: November 11, 2017
    Date of Patent: December 31, 2019
    Assignees: DOCOMO Incorporated
    Inventors: Fusao Ishii, Nakanishi Mikiko, Takahashi Kazuhiko, Abrakawa Yuji, Keiichi Murakami