Patents Examined by Christopher G. Young
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Patent number: 12085847Abstract: A pellicle characterized by having an amount of released aqueous gas of 1×10?3 Pa·L/s or less per pellicle, an amount of released hydrocarbon-based gas of 1×10?5 Pa·L/s or less per pellicle in a range of measured mass number of 45 to 100 amu, and an amount of released hydrocarbon-based gas of 4×10?7 Pa·L/s or less per pellicle in a range of measured mass number of 101 to 200 amu, under vacuum after the pellicle has been left to stand for 10 minutes in an atmosphere of 23° C. and 1×10?3 Pa or less.Type: GrantFiled: September 1, 2023Date of Patent: September 10, 2024Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Yu Yanase
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Patent number: 12072619Abstract: Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern while suppressing an increase in the thickness of an absorber film when EUV exposure is conducted in an atmosphere including hydrogen gas. A reflective mask blank (100) comprises a substrate (1), a multilayer reflection film (2) on the substrate, and an absorber film (4) on the multilayer reflection film. The reflective mask blank (100) is characterized in that: the absorber film (4) includes an absorption layer (42) and a reflectance adjustment layer (44); the absorption layer (42) contains tantalum (Ta), nitrogen (N), and at least one added element selected from hydrogen (H) and deuterium (D); the absorption layer (42) includes a lower surface region (46) including a surface on the substrate side, and an upper surface region (48) including a surface on the side opposite to the substrate; and the concentration (at.Type: GrantFiled: June 18, 2020Date of Patent: August 27, 2024Assignee: HOYA CORPORATIONInventors: Masanori Nakagawa, Tsutomu Shoki
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Patent number: 12072633Abstract: A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.Type: GrantFiled: June 14, 2023Date of Patent: August 27, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Tsung Shih, Yu-Hsun Wu, Bo-Tsun Liu, Tsung-Chuan Lee
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Patent number: 12055850Abstract: A circuit layout patterning method includes: receiving a photomask substrate including a shielding layer; defining a chip region and a peripheral region adjacent to the chip region; forming a design pattern in the chip region; forming a reference pattern by emitting one first radiation shot and a beta pattern by emitting a plurality of second radiation shots in the peripheral region, wherein a pixel size of the first radiation shot is greater than a pixel size of the second radiation shot; comparing a width of the reference pattern and a width of the beta pattern; transferring the design pattern to the shielding layer if a difference between the width of the reference patterned and the width of the beta pattern is within a tolerance; and transferring the design pattern of the photomask to a semiconductor substrate.Type: GrantFiled: April 9, 2023Date of Patent: August 6, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Cheng-Ming Lin, Hao-Ming Chang, Chih-Ming Chen, Chung-Yang Huang
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Patent number: 12055860Abstract: An overlay mark includes a first, a second, a third, and a fourth component. The first component is located in a first region of the first overlay mark and includes a plurality of gratings that extend in a first direction. The second component is located in a second region of the first overlay mark and includes a plurality of gratings that extend in the first direction. The third component is located in a third region of the first overlay mark and includes a plurality of gratings that extend in a second direction different from the first direction. The fourth component is located in a fourth region of the first overlay mark and includes a plurality of gratings that extend in the second direction. The first region is aligned with the second region. The third region is aligned with the fourth region.Type: GrantFiled: August 7, 2023Date of Patent: August 6, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu-Ching Lee, Te-Chih Huang, Yu-Piao Fang
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Patent number: 12055855Abstract: A robust, high-transmission pellicle for extreme ultraviolet lithography systems is disclosed. In one example, the present disclosure provides a pellicle that includes a membrane and a frame supporting the membrane. The membrane may be formed from at least one of a transparent carbon-based film and a transparent silicon based film. The at least one of the transparent carbon-based film and the transparent silicon based film may further be coated with a protective shell. The frame may include at least one aperture to allow for a flow of air through a portion of the pellicle.Type: GrantFiled: April 17, 2023Date of Patent: August 6, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Yun-Yue Lin
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Patent number: 12050408Abstract: One or more images of a device feature are acquired using an imaging tool. A geometrical shape is defined encompassing the relevant pixels of each image, where the geometrical shape is represented in terms of one or more parameters. A cost function is defined whose variables comprise the one or more parameters of the geometrical shape. For each image, numerical optimization is applied to obtain optimal values of the one or more parameters for which the cost function is minimized. The optimal values of the one or more parameters are reported as metrology data pertaining to the device feature.Type: GrantFiled: November 24, 2020Date of Patent: July 30, 2024Assignee: Applied Materials, Inc.Inventors: Waheb Bishara, Stephanie W. Chen, Bin Lin, Xinhuo Xiao
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Patent number: 12050400Abstract: The present invention is to provide a pellicle frame in a frame shape having an upper end face on which a pellicle film is to be arranged and a lower end face to face a photomask, which is characterized by being provided with a notched part from the outer side face toward inner side face of the lower end face; a pellicle including the pellicle frame as an element; and a method for peeling a pellicle from a photomask onto which the pellicle has been attached, which is characterized by inserting a peeling jig into a notched part from a side face of a pellicle frame, and moving the peeling jig in an upper end face direction of the pellicle frame in this state to peel off the pellicle from the photomask.Type: GrantFiled: September 19, 2023Date of Patent: July 30, 2024Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Yu Yanase
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Patent number: 12044960Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.Type: GrantFiled: June 26, 2023Date of Patent: July 23, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Pei-Cheng Hsu, Ching-Huang Chen, Hung-Yi Tsai, Ming-Wei Chen, Hsin-Chang Lee, Ta-Cheng Lien
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Patent number: 12044959Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.Type: GrantFiled: February 27, 2023Date of Patent: July 23, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hung-Yi Tsai, Wei-Che Hsieh, Ta-Cheng Lien, Hsin-Chang Lee, Ping-Hsun Lin, Hao-Ping Cheng, Ming-Wei Chen, Szu-Ping Tsai
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Patent number: 12044977Abstract: Examples of a multiple-mask multiple-exposure lithographic technique and suitable masks are provided herein. In some examples, a photomask includes a die area and a stitching region disposed adjacent to the die area and along a boundary of the photomask. The stitching region includes a mask feature for forming an integrated circuit feature and an alignment mark for in-chip overlay measurement.Type: GrantFiled: July 26, 2023Date of Patent: July 23, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Peter Yu, Chih-Tung Hsu, Kevin Wang, Chih-Chia Hu, Roger Chen
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Patent number: 12038684Abstract: The prevent disclosure provides a method for forming a reflective mask. In some embodiments, the method includes forming a carbon-containing layer over a substrate; forming a reflective multilayer over the carbon-containing layer; forming an absorption pattern over the reflective multilayer. In some embodiments, the method includes growing a light absorbing layer over a substrate; polishing the light absorbing layer; forming a reflective layer over the polished light absorbing layer; forming an absorption pattern over the reflective layer.Type: GrantFiled: March 22, 2023Date of Patent: July 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsiao-Chen Wu, Pei-Cheng Hsu
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Patent number: 12038693Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.Type: GrantFiled: May 15, 2023Date of Patent: July 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Cheng Chen, Chia-Jen Chen, Hsin-Chang Lee, Shih-Ming Chang, Tran-Hui Shen, Yen-Cheng Ho, Chen-Shao Hsu
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Patent number: 12038686Abstract: The present invention is to provide a pellicle frame in a frame shape having an upper end face on which a pellicle film is to be arranged and a lower end face to face a photomask, which is characterized by being provided with a notched part from the outer side face toward inner side face of the lower end face; a pellicle including the pellicle frame as an element; and a method for peeling a pellicle from a photomask onto which the pellicle has been attached, which is characterized by inserting a peeling jig into a notched part from a side face of a pellicle frame, and moving the peeling jig in an upper end face direction of the pellicle frame in this state to peel off the pellicle from the photomask.Type: GrantFiled: September 18, 2023Date of Patent: July 16, 2024Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Yu Yanase
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Patent number: 12038685Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2?: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.Type: GrantFiled: May 24, 2023Date of Patent: July 16, 2024Assignee: AGC INC.Inventors: Hirotomo Kawahara, Hiroyoshi Tanabe, Toshiyuki Uno, Hiroshi Hanekawa, Daijiro Akagi
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Patent number: 12032280Abstract: A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.Type: GrantFiled: December 19, 2023Date of Patent: July 9, 2024Assignee: AGC INC.Inventors: Hiroshi Hanekawa, Taiga Fudetani, Yusuke Ono, Shunya Taki
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Patent number: 12025918Abstract: A method for lithography in semiconductor fabrication is provided. The method includes placing a semiconductor wafer over a wafer stage. The method also includes supplying an initial voltage to a plurality of electrodes of the wafer stage based on a topology of the semiconductor wafer, wherein the electrodes of the wafer stage are electrically isolated from each other. The method further includes measuring an adjusted topology of the semiconductor wafer after the initial voltage is supplied. In addition, the method includes supplying different first adjusted voltages to the electrodes of the wafer stage according to the adjusted topology of the semiconductor wafer.Type: GrantFiled: January 9, 2023Date of Patent: July 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Kuan Wu, Po-Chung Cheng, Li-Jui Chen, Chih-Tsung Shih
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Patent number: 12025911Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.Type: GrantFiled: May 2, 2023Date of Patent: July 2, 2024Assignee: HOYA CORPORATIONInventors: Kazuhiro Hamamoto, Tsutomu Shoki
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Patent number: 12019368Abstract: An aqueous cleaning composition containing sulfonic acids and a source of chloride ions is used to clean contaminants from EUV masks used in the manufacture of semiconductors. Optionally, the aqueous cleaning composition can include oxidizing agents and surfactants. The aqueous cleaning composition removes tin as well as other contaminants from the mask. Such other contaminants include, but are not limited to, aluminum oxide, etch and photoresist residues.Type: GrantFiled: February 8, 2022Date of Patent: June 25, 2024Assignee: DUPONT ELECTRONICS, INC.Inventor: Pen-Nan Liao
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Patent number: 12019366Abstract: Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern when EUV exposure is performed in an atmosphere comprising a hydrogen gas. A reflective mask blank comprises: a substrate; a multilayer reflective film on the substrate; and an absorber film on the multilayer reflective film. The absorber film comprises an absorption layer and a reflectance adjustment layer. The absorption layer comprises tantalum (Ta), boron (B), nitrogen (N), and at least one additive element selected from hydrogen (H) and deuterium (D). A content of the boron (B) in the absorption layer is more than 5 atomic %. A content of the additive element in the absorption layer is 0.1 atomic % or more and 30 atomic % or less.Type: GrantFiled: June 18, 2020Date of Patent: June 25, 2024Assignee: HOYA CORPORATIONInventors: Masanori Nakagawa, Tsutomu Shoki