Abstract: A substrate-treating apparatus includes a liquid-providing part, a first liquid-removing knife and a returning part. The liquid-providing part provides a first liquid chemical for cleaning a substrate that includes a metal pattern and a photoresist pattern on the metal pattern, and for removing an etchant that remains on the substrate. The first liquid-removing knife sprays a second liquid chemical in a direction inclined and opposite to a returning direction of the substrate, so as to remove the first liquid chemical, the first liquid chemical including a metal precipitate. The returning part returns the substrate from the liquid-providing part toward the first liquid-removing knife in the returning direction.

Abstract: A method of cleaning a wafer in semiconductor fabrication is provided. The method includes cleaning a wafer using a wafer scrubber. The method further includes moving the wafer scrubber into an agitated cleaning fluid. The method also includes creating a contact between the wafer scrubber and a cleaning stage in the agitated cleaning fluid. In addition, the method includes cleaning the wafer or a second wafer by the wafer scrubber after the wafer scrubber is cleaned by the agitated cleaning fluid.

Abstract: Method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of an alumina polymer, said solution or dispersion being obtained by hydrolysis and condensation of monomers of at least one aluminium oxide precursor in a solvent or a solvent mixture in the presence of water and a catalyst. The invention can be used for making a hard mask in a TSV process to form a high aspect ratio via a structure on a semiconductor substrate.

Abstract: A dual function cleaning nozzle assembly for prewashing kitchen utensils. The cleaning nozzle includes air and fluid inlets. The air inlet is coupled to an air conduit which includes a first control valve, and the fluid inlet is coupled to a fluid conduit which includes a second control valve. A lever or button is coupled to a first valve for discharging pressurized air through the air conduit. The air and fluid conduits are coupled to an outlet chamber which has a spray head. Compressed air is discharged from the spray head for allowing kitchen utensils to be prewashed with air. The lever or button is further coupled to a second valve for discharging pressurized fluid through the fluid conduit. The fluid conduit is also coupled to the outlet chamber for allowing a discharge of pressurized air and fluid to be sprayed from the nozzle to further prewash the kitchen utensils.

Abstract: Apparatus for and method of cleaning an electrically conductive surface of an optical element in a system for generating extreme ultraviolet radiation in which electrically conductive surface is used as an electrode for generating a plasma which cleans the surface.

Abstract: A method performed by a processor of a plasma processing system including a transfer device and a plasma processing apparatus that includes a process chamber. The process chamber includes a mount table on a surface of which a first focus ring is placed. The method includes controlling the transfer device to transfer the first focus ring out of the process chamber without opening the process chamber to the atmosphere; after the first focus ring is transferred out of the process chamber, controlling the plasma processing apparatus to clean the surface of the mount table; and after the surface of the mount table is cleaned, controlling the transfer device to transfer a second focus ring into the process chamber and place the second focus ring on the surface of the mount table without opening the process chamber to the atmosphere.

Abstract: Systems and methods for rinsing beverage residue from a mechanical interface between threads of a bottle and threads of a bottle cap is described. The bottle cap may include a sealable coating to create a seal against a rim of the bottle. The bottle cap may also include passages to allow pressurized water to be injected into an upper inner region of the bottle cap. The pressurized water is prevented from entering the bottle due to the seal between the rim of the bottle and the sealable coating of the bottle cap. Therefore, the pressurized water is caused to escape through the mechanical thread interface toward a lower inner region of the bottle cap where the water escapes from the cap at atmospheric pressure.

Abstract: The water outlet of a subsystem that includes an ultraviolet oxidation device and the water inlet of each substrate treatment device are connected to each other via a main pipe. A hydrogen peroxide removal device is installed between the ultraviolet oxidation device of the subsystem and a non-regenerative ion-exchange device. In addition, a carbon dioxide supply device is installed at the middle of a pipe that branches from the water outlet of the subsystem to reach the substrate treatment device. According to an aspect, the hydrogen peroxide removal device is filled with a platinum-group metal catalyst. Thus, ultrapure water passed through the ultraviolet oxidation device is used as a base to produce carbonated water in which the concentration of hydrogen peroxide dissolved therein is limited to 2 ?g/L or less and to which carbon dioxide is added to adjust resistivity to be within the range of 0.03 to 5.0 M?·cm.

Abstract: A composition for polishing silicon nitride according to the present invention includes colloidal silica, a polishing aid including a phosphoric acid compound and a sulfuric acid compound. By further including an oxidizing agent, a first selectivity representing the ratio of a polishing speed for a metal layer to a polishing speed for a silicon nitride layer and a second selectivity representing the ratio of a polishing speed for an oxide insulating layer to a polishing speed for a silicon nitride are controlled.

Abstract: A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (—COOR1), sulfonate (—SO3R2), sulfate (—O—SO3R3), phosphonate (—P(?O)(OR4)(OR5)), phosphate (—O—P(?O)(OR6)(OR7)), carboxylic acid (—COOH), sulfonic acid (—SO3H), sulfuric acid (—O—SO3—), phosphonic acid (—P(?O)(OH)2), phosphoric acid (—O—P(?O)(OH)2) moiety, or their deprotonated forms, R1 is alkyl, aryl, alkylaryl, or arylalkyl R2 is alkyl, aryl, alkylaryl, or arylalkyl, R3 is alkyl, aryl, alkylaryl, or arylalkyl, R4 is alkyl, aryl, alkylaryl, or arylalkyl, R5 is H, alkyl, aryl, alkylaryl, or arylalkyl, R6 is alkyl, aryl, alkylaryl, or arylalkyl, R7 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

Abstract: A method for operating a self-propelled floor cleaning device, in a first operating step, drives the floor cleaning device across a first treatment path across the floor to be cleaned according to a predetermined driving strategy, or according to a predetermined algorithm, which is calculated on the basis of data, which are detected by sensors and thereby carries out a first cleaning step by a first cleaning device. In the first operating step, areas of the floor surfaces to be cleaned, which are cleaned in at least a second operating step by a second cleaning device, or which are excluded from the cleaning by the second cleaning device, are determined. A floor cleaning device, which is suitable for carrying out the method, has a chassis, a first cleaning device for dry cleaning a floor surface, and a second cleaning device for wet cleaning areas of the floor surface.

Abstract: Method for treating a heat exchanger which in operation is used to cool process water which has been in contact with polymer particles. The method includes passing to the process side of the heat exchanger a treatment stream while the heat exchanger is at an elevated temperature compared to the temperature when the heat exchanger is in operation.

Abstract: A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, —an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.

Abstract: Methods of cleaning internal portions of additively manufactured components are provided, together with an apparatus for carrying out the cleaning. The methods use an impacting element which is contained within the internal portion and the component is vibrated to clean material from the component and leave one or more hollow portions. Various embodiments for retaining the impacting element are set out, which preferably use a grid which allows loosened powder to fall out of the component and, optionally, be recycled for use in further manufacturing processes. The methods are described in relation to components for gas turbine engines but have wider application in relation to any additively manufactured component in which it is desired to have a hollow internal portion.

Abstract: Compositions for use in CMP processing and methods of CMP processing. The composition utilizes low levels of particulate material, in combination with at least one amino acid, at least one oxidizer, and water to remove a metal layer such as one containing copper to a stop layer with high selectivity.

Abstract: An example method for plasma cleaning a container includes generating plasma flowing within the container, applying a magnet to an exterior surface of the container causing the plasma within the container to be attracted to the magnet, and moving the magnet in a motion over the exterior surface to control movement of the plasma within the container and to clean one or more areas of the container with the plasma according to the motion. An example system for plasma cleaning a container includes a power source, a gas inlet on the container for dispersing a gas within the container, and based on current flowing, the gas converts to plasma. The system also includes a robotic manipulator having an end effector coupled to a magnet to move the magnet in a motion over an exterior surface of the container causing the plasma within the container to be attracted to the magnet.

Abstract: A pig launcher/receiver includes a fluid distribution grid arranged above a floor of the pig launcher/receiver's barrel to define a fluid chamber between the floor and the fluid distribution grid. The distribution grid has a plurality of ports arranged to form jets that discharge at least a portion of the fluid which enters the fluid chamber. A predetermined number of the ports are inclined relative to vertical and in a direction opposite a closure door of the barrel. The fluid distribution grid, which is preferably semi-circular shaped, can be a permanent weldment, bolted on, or removable. When used in launching a pig, the ports provide a differential pressure that lifts the pig and overcomes friction as the pig moves forward. Because a number of the ports are blocked by the sealing elements (cup or disc) of the pipeline pig, the number of pigs residing in the launcher/receiver can be determined.

Abstract: The present disclosure relates to methods for enhanced demetalyzation of an ultrahard material, such as polycrystalline diamond (PCD) or cubic boron nitride (CBN), using a thiourea solution. The thiourea solution may contain thiourea and an acid, such as a Bronstead acid suitable for leaching. The thiourea may contain thiourea or a substituted thiourea, including tautomers thereof. The ultrahard material may be exposed to the thiourea solution for a time and under conditions sufficient to remove at least a desired amount of a metal, such as a catalyst used during formation of the PCD or CBN, from at least a portion of the ultrahard material.

Abstract: A method for cleaning a coke deposit from an internal surface of a process equipment, comprising removing at least a portion of the coke deposit from the internal surface using a flexible pig comprising a plurality of bristles, without damaging a metal protective layer of the internal surface of the process equipment. A flexible pig for cleaning a coke deposit from an internal surface of a process equipment without damaging a metal protective layer of the internal surface, comprising a flexible body formed of a polymeric material, and a plurality of bristles partially encapsulated by the polymeric material of the flexible body.

Abstract: A device and related method for removing debris from a metal wire formed by a process utilizing a lubricant is provided. The device includes at least two segments forming a passage through which the wire passes, each having a leading edge for stripping debris from the wire, and a resilient member positioned around the at least two segments and applying a force to the segments sufficient to cause contact between the leading edges and the wire passing through the passage. The method broadly includes the steps of moving the metal wire through a passage formed by a plurality of segments, contacting the wire moving through the passage using a leading edge of each of the plurality of segments, and applying a force to the plurality of segments to cause contact between the leading edge of each of the plurality of segments and the wire passing through the passage.