Abstract: A lithography method for a pattern to be etched on a support, notably to a method using electron radiation with direct writing on the support. Hitherto, the methods for correcting the proximity effects for dense network geometries (line spacings of 10 to 30 nm) have been reflected in a significant increase in the radiated doses and therefore in the exposure time. According to the invention, the patterns to be etched are modified as a function of the energy latitude of the process, which allows a reduction of the radiated doses.

Abstract: A method and an apparatus to protect a reticle against particles and chemicals in an actinic EUV reticle inspection tool are presented. The method and apparatus utilizes a pair of porous metal diffusers in the form of showerheads to provide a continual flow of clean gas. The main showerhead bathes the reticle surface to be inspected in smoothly flowing, low pressure gas, isolating it from particles coming from surrounding volumes. The secondary showerhead faces away from the reticle and toward the EUV illumination and projection optics, supplying them with purge gas while at the same time creating a buffer zone that is kept free of any particle contamination originating from those optics.

Abstract: A projection optics for microlithography, which images an object field in an object plane into an image field in an image plane, where the projection optics include at least one curved mirror and including at least one refractive subunit, as well as related systems, components, methods and products prepared by such methods, are disclosed.

Abstract: Microlithographic illumination system includes individually drivable elements to variably illuminate a pupil surface of the system. Each element deviates an incident light beam based on a control signal applied to the element. The system also includes an instrument to provide a measurement signal, and a model-based state estimator configured to compute, for each element, an estimated state vector based on the measurement signal. The estimated state vector represents: a deviation of a light beam caused by the element; and a time derivative of the deviation. The illumination system further includes a regulator configured to receive, for each element: a) the estimated state vector; and b) target values for: i) the deviation of the light beam caused by the deviating element; and ii) the time derivative of the deviation.

Abstract: According to one embodiment, an exposure apparatus includes a light blocking unit that blocks an exposure light reflected on a reflective mask at a part other than an aperture; a detection unit that measures a light intensity of the exposure light passed through the light blocking unit; and a calculation unit that calculates, based on the light intensity, a transfer characteristic when a pattern on the reflective mask is transferred to a substrate. In the light blocking unit, a position on an aperture plane and a position in an optical axis direction of the exposure light are adjusted. The calculation unit calculates the transfer characteristic based on the position in the optical axis direction in which the light intensity is maximized.

Abstract: A lithography method based on the projection of cells, notably direct-write electron-beam lithography. One of the main limitations of the methods of this type in the prior art is the writing time. To overcome this limitation, according to the method of the invention, the size of the cells is increased to the maximum aperture of the lithography device. Advantageously, this size increase is obtained by modifying the size of the apertures of the projection stencil level closest to the substrate to be etched. Advantageously, a strip is added to the outside of the block to be etched onto which is radiated a dose calculated to optimize the process energy latitude. Advantageously, this strip is spaced apart from the edge of the block to be etched. Advantageously, the projected cells are not adjoining.

Abstract: An exposure apparatus includes a first mark-forming unit further upstream than an irradiation region for exposure light in a direction of conveyance of a member to be exposed. A mark for meandering detection is detected, and a detection unit detects the mark for meandering detection in a direction intersecting a direction of movement of the member to be exposed. A second mark-forming unit is moved so as to negate an amount of meandering by the member to be exposed, computed on the basis thereof, and an alignment mark is formed rectilinearly in a relative fashion with respect to the member to be exposed. This enables highly accurate, stable exposure whereby, even in a case where the member is supplied continuously, an alignment mark for mask position adjustment can be changed in accordance with the meandering of the member to be exposed and the position of the mask with respect to the member to be exposed can be accurately adjusted.

Abstract: The present disclosure provides a lithography system comprising a radiation source and an exposure tool including a plurality of exposure columns densely packed in a first direction. Each exposure column includes an exposure area configured to pass the radiation source. The system also includes a wafer carrier configured to secure and move one or more wafers along a second direction that is perpendicular to the first direction, so that the one or more wafers are exposed by the exposure tool to form patterns along the second direction. The one or more wafers are covered with resist layer and aligned in the second direction on the wafer carrier.

Abstract: Scatterometry for measuring overlay. A second set of superimposed gratings are superposed over a first set of superimposed gratings. The second set of gratings have a different periodicity from the first set of gratings or a different orientation. Consequently the first order diffraction pattern from the second set of superimposed gratings can be distinguished from the first order diffraction pattern from the first set of superimposed gratings.

Abstract: A lithographic projection apparatus includes a stage assembly having a substrate table on which a substrate is supported and exposed with an exposure beam from a final optical element of a projection optical assembly through an immersion liquid. A confinement member encircles a portion of a path of the exposure beam and has an aperture through which the exposure beam is projected. A movable member is movable in a space between the confinement member and the substrate, the substrate table, or both, such that a first portion of the space is located between a first surface of the movable member and the confinement member, and a second portion of the space is located between a second surface of the movable member and the substrate, the substrate table, or both.

Abstract: Illumination systems for microlithographic projection exposure apparatus, as well as related systems, components and methods are disclosed. In some embodiments, an illumination system includes one or more scattering structures and an optical integrator that produces a plurality of secondary light sources.

Abstract: Disclosed is an apparatus including a mechanical reference frame and a rigid object mechanically coupled to the reference frame by two or more constraints. The stiffnesses of at least two of the constraints are different from one another, and the relative locations and stiffnesses of the constraints cause a designated point on the rigid object to remain stationary with respect to the reference frame during thermal expansion of the rigid object over a range of temperatures.

Abstract: An encoder system includes an encoder scale and an encoder head, in which the encoder head is configured to combine each twice-diffracted measurement beam of multiple twice-diffracted measurement beams with a corresponding reference beam to form multiple output beams, where the encoder head includes a monolithic optical component having multiple facets, the multiple facets being arranged to: receive multiple once-diffracted measurement beams from a surface of the encoder scale; and redirect the multiple once-diffracted measurement beams back towards the surface of the encoder scale, the encoder scale being positioned in a path of the once-diffracted measurement beams to produce the twice-diffracted measurement beams.

Abstract: A method for thermally conditioning an optical element includes irradiating the optical element with radiation, not-irradiating the optical element with the radiation, allowing heat flow between the optical element and a conditioning fluid that is held in a conditioning fluid reservoir, and providing a fluid flow of the conditioning fluid, to supply thermally conditioned fluid to the reservoir. A flow rate of the fluid during the irradiating of the optical element is lower than a flow rate of the fluid when the optical element is not-irradiated.

Abstract: An approach is used to estimate and correct the overlay variation as function of offset for each measurement. A target formed on a substrate includes periodic gratings. The substrate is illuminated with a circular spot on the substrate with a size larger than each grating. Radiation scattered by each grating is detected in a dark-field scatterometer to obtain measurement signals. The measurement signals are used to calculate overlay. The dependence (slope) of the overlay as a function of position in the illumination spot is determined. An estimated value of the overlay at a nominal position such as the illumination spot's center can be calculated, correcting for variation in the overlay as a function of the target's position in the illumination spot. This compensates for the effect of the position error in the wafer stage movement, and the resulting non-centered position of the target in the illumination spot.

Abstract: A method includes receiving a substrate having a material feature embedded in the substrate, wherein receiving the substrate includes receiving a first leveling data and a first overlay data generated when forming the material feature, deposing a resist film on the substrate, and exposing the resist film using a predicted overlay correction data to form a resist pattern overlying the material feature on the substrate, wherein using the predicted overlay correction data includes generating a second leveling data and calculating the predicted overlay correction data using the first leveling data, the first overlay data, and the second leveling data.

Abstract: A method includes obtaining, from a detector of an interferometry system, an interference signal based on a combination of a first beam and a reference beam, subsequent to the first beam being diffracted by an encoder scale, obtaining, through an electronic processor, an error compensation signal based on a non-harmonic cyclic error that modifies the interference signal, and outputting information about a change in a position of the encoder scale relative to an optical assembly of the interferometry system based on the interference signal and the error compensation signal.

Abstract: An illumination optical system includes: a stop configured to define an illumination range of a surface to be illuminated; an imaging optical system configured to form an image of an aperture of the stop onto the surface to be illuminated; an calculation unit configured to calculate an offset amount between a size of the aperture and a target illumination range of the surface to be illuminated using data on the target illumination range; and an adjusting unit configured to adjust the size of the aperture based on the calculated offset amount. The offset amount differs according to a size of the target illumination range.

Abstract: A reticle assembly for use in a lithographic process in which a first image field and a second image field are projected onto a first target portion and a second target portion on a substrate, the reticle assembly being arranged to hold a first reticle having the first image field and a second reticle having the second image field such that a distance between the first and second image fields substantially corresponds to a distance between the first and the second target portions. Embodiments also relate to a lithographic apparatus including the reticle assembly, the use in a lithographic process in which a first image field and a second image field are projected onto a first target portion and a second portion on a substrate, of a first reticle having the first image field and a second reticle having the second image field, wherein a distance between the first and second image fields substantially corresponds to a distance between the first and second target portions.

Abstract: A fluid handling structure for a lithographic apparatus, the fluid handling structure to confine liquid to a space, the fluid handling structure having, on an undersurface surrounding the space, a liquid supply opening to supply liquid onto an undersurface of the fluid handling structure and, radially inward with respect to the space of the liquid supply opening, a two dimensional array of liquid extraction openings to extract a liquid from the space and to extract liquid on the undersurface from the liquid supply opening.