Abstract: A method for controlling a microlithographic projection exposure apparatus includes: determining a wavefront error of the projection exposure apparatus; generating a travel vector, suitable for correcting the wavefront error, with travels for each zone of the optical manipulator; establishing a constraint parameter with respect to the travel for at least one zone of the optical manipulator; and checking the travels of the generated travel vector with respect to implementability.

Abstract: A deformation pattern recognition method including providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by a processing device; transferring a first pattern to a substrate, the first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position; processing the substrate; measuring a position of N alignment marks and determining an alignment mark displacement for the N alignment marks by comparing the respective nominal position with the respective measured position; fitting at least one deformation pattern to the measured alignment mark displacements; determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit; using the determined accuracy value, determining whether an associated deformation pattern is present.

Abstract: A sensor for use in lithographic apparatus of an immersion type and which, in use, comes into contact with the immersion liquid is arranged so that the thermal resistance of a first heat path from a transducer of the sensor to a temperature conditioning device is less than the thermal resistance of a second heat flow path from the transducer to the immersion liquid. Thus, heat flow is preferentially towards the temperature conditioning device and not the immersion liquid so that temperature-induced disturbance in the immersion liquid is reduced or minimized.

Abstract: A support table for a lithographic apparatus, the support table having a support section and a conditioning system, wherein the support section, the conditioning system, or both, is configured such that heat transfer to or from a substrate supported on the support table, resulting from the operation of the conditioning system, is greater in a region of the substrate adjacent an edge of the substrate than it is in a region of the substrate that is at the center of the substrate.

Abstract: A substrate is exposed with an illumination light via a projection optical system. A stage that holds the substrate moves below the projection optical system. A measurement system measures positional information of the stage with a plurality of heads that face a grating section. Movement of the stage is controlled based on the positional information measured with the measurement system, while compensating for a measurement error of the measurement system that occurs due to the heads.

Abstract: A tray for a panel exposure machine, and also such a machine, enabling a panel to be retained and pressed down so as to be presented facing an exposure device.

Abstract: A substrate treating apparatus according to the present invention includes: an index unit having an index robot and a port on which a container containing a substrate is placed; a process treating unit having a development treating unit in which a first development treating chamber and a second development treating chamber for performing a substrate development process are arranged in divided layers; and a first path unit arranged between the development treating unit and the index unit, wherein the first development treating chamber includes a development module, a first heating module, and a first main transport robot arranged in a movement passage accessible to the development module and the first heating module, wherein the first path unit includes a second heating module, a first buffer module, a cooling module, a second buffer module, and a first buffer transport robot arranged in a movement passage accessible to the second heating module, the first buffer module, the cooling module and the second buffe

Abstract: A digital exposure device including a GLV or a DMD. The digital exposure device also includes: a stage to support and move a substrate in a scan direction; an optical system disposed between the stage and the GLV or the DMD, to form a pattern on the substrate by modulating light received from the GLV or the DMD; and a control unit to control the a width of the pattern by a unit, the unit being obtained by dividing the width of the pattern by a natural number m, in the second direction.

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

Abstract: A measuring apparatus measures a position of each of shot regions formed on a substrate. The apparatus includes a detector configured to detect a mark formed with respect to a shot region on the substrate, and a processor configured to obtain a position of each of the shot regions based on an output of the detector. The processor is configured to obtain a coefficient of a regression equation for obtaining a position of each of the shot regions, based on an output of the detector with respect to each of a plurality of sample shot regions on the substrate, and obtain, if the coefficient satisfies a tolerable condition for a discrepancy between the coefficient and a reference value thereof, the position of each of the shot regions using each offset amount that is obtained beforehand to correct the position of each of the shot regions obtained based on the regression equation.

Abstract: The present invention provides an original holding apparatus which holds an original, comprising a first holding unit configured to hold the original, a second holding unit configured to hold the original, a fixing unit configured to fix the second holding unit, and an adjustment unit configured to perform adjustment of an holding force of at least one of the first holding unit and the second holding unit, wherein the adjustment unit performs the adjustment such that the holding force of the second holding unit before fixing the second holding unit is smaller than the holding force of the first holding unit before fixing the second holding unit, and performs the adjustment such that the holding force of the second holding unit after fixing the second holding unit is larger than that before fixing the second holding unit.

Abstract: The disclosure relates to an optical assembly for a projection exposure apparatus for semiconductor lithography. The optical assembly includes at least one optical element and a mounting body for mechanically fixing the element in a supporting structure. The optical assembly also includes at least one cooling body for dissipating heat from the element. The mounting body and the cooling body are separate from one another. The optical element is connected to the cooling body via at least one heat-conducting element. The disclosure also relates to a projection exposure apparatus including an optical assembly according to the disclosure.

Abstract: An optical arrangement for use in an optical imaging process includes an optical element, an immersion zone and a liquid repelling device. During the optical imaging process, the immersion zone is located adjacent to the optical element and is filled with an immersion liquid. The optical element has a first surface region and a second surface region. During the optical imaging process, the first surface region is wetted by the immersion liquid. At least temporarily during the optical imaging process, the liquid repelling device generates an electrical field in the region of the second surface. The electrical field being is adapted to cause a repellent force on parts of the immersion liquid which are responsive to the electrical field and inadvertently contact the second surface region. The repellent force has a direction to drive away the parts of the immersion liquid from the second surface region.

Abstract: An apparatus and method for cleaning a contaminated surface of a lithographic apparatus are provided. A liquid confinement structure comprises at least two openings used to supply and extract liquid to a gap below the structure. The direction of flow between the openings can be switched. Liquid may be supplied to the gap radially outward of an opening adapted for dual flow. Supply and extraction lines to respectively supply liquid to and extract liquid from the liquid confinement structure have an inner surface that is resistant to corrosion by an organic liquid. A corrosive cleaning fluid can be used to clean photo resist contamination.

Abstract: An imaging assembly for directing a pattern of energy at a workpiece includes (i) a reticle that defines a reticle array that includes a plurality of spaced apart, transmitting regions; (ii) an illumination source that generates an illumination beam; and (iii) a director assembly that selectively directs the illumination beam at the reticle array, the director assembly includes a plurality of director elements that are individually controlled to selectively control the beam pattern that is directed at the reticle array.

Abstract: A radiation source having a fuel stream generator (110) that generates and directs a fuel stream (102) along a trajectory towards a plasma formation location (104). A pre-pulse laser radiation assembly directs a first beam of laser radiation (100) at the fuel stream at the plasma formation location to generate a modified fuel target (106). A main pulse laser radiation assembly directs a second beam of laser radiation (108) at the modified fuel target at the plasma formation location to generate a radiation generating plasma (117). A collector (122) collects the radiation and directs it along an optical axis (105) of the radiation source. The first beam of laser radiation being directed toward the fuel stream substantially along the optical axis.

Abstract: An arrangement for a lithography apparatus has a component and a weight compensating device to compensate for a weight of the component. The weight compensating device includes a first magnetic device and a second magnetic device. The first magnetic device is designed to exert a first magnetic force on the component. The first magnetic force exceeds the weight of the component. The first magnetic force acts counter to the weight of the component. The second magnetic device is designed to exert a second magnetic force on the component. The second magnetic force acts in the direction of the weight of the component. The first magnetic force corresponds to the sum of the second magnetic force and the weight. The second magnetic device is designed to reduce the second magnetic force at the same time and by the same absolute value as the first magnetic force.

Abstract: A system and method that bends a reticle and senses a curvature of a bent reticle in real-time. The system includes movable reticle stage, reticle vacuum clamps, sensor systems, and reticle bender. The reticle bender comprises piezo actuators. The sensor systems comprises measurement targets and corresponding sensors. The sensors are attached to the movable reticle stage and the measurement targets are attached to the reticle clamps, the reticle bender, or on reticle surfaces. The system is configured to determine a width of the reticle or distance between measurement targets at opposing ends of the reticle, measure a first rotational angle at a first end of the reticle, and measure a second local rotational angle at a second end of the reticle that is opposite to the first end. Based on the width or distance and the first and second angles, a field curvature of the reticle is determined.

Abstract: An imaging optical unit for EUV projection lithography serves to image an object field into an image field. Mirrors guide imaging light from the object field to the image field. An aperture stop is tilted by at least 1° in relation to a normal plane which is perpendicular to an optical axis. The aperture stop has a circular stop contour. In mutually perpendicular planes, a deviation of a numerical aperture NAx measured in one plane from a numerical aperture NAy measured in the other plane is less than 0.003, averaged over the field points of the image field. What emerges is an imaging optical unit, in which homogenization of an image-side numerical aperture is ensured so that an unchanging high structure resolution in the image plane is made possible, independently of an orientation of a plane of incidence of the imaging light in the image field.

Abstract: A lithographic apparatus includes a substrate table constructed to hold a substrate, a projection system configured to project a patterned radiation beam through an opening and onto a target portion of the substrate, and a conduit having an outlet in the opening. The conduit is configured to deliver gas to the opening. The lithographic apparatus includes a temperature control apparatus disposed in a space between the projection system and the substrate table. The temperature control device is configured to control the temperature of the gas in the space after the gas passes through the opening.