Patents Examined by Cynthia Hamilton
  • Patent number: 10845702
    Abstract: A photosensitive composition including a quantum dot dispersion, a reactive compound having at least two thiol groups, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes a carboxylic acid group-containing polymer and a quantum dot dispersed in the carboxylic acid group containing polymer, and wherein the carboxylic acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic moiety and not having a carboxylic acid group.
    Type: Grant
    Filed: August 19, 2016
    Date of Patent: November 24, 2020
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG SDI CO., LTD.
    Inventors: Shang Hyeun Park, Hojeong Paek, Eun Joo Jang, Shin Ae Jun
  • Patent number: 10838304
    Abstract: Semiconductor systems and methods are provided. In an embodiment, a method of film formation includes receiving a substrate, dispensing a priming material on the substrate, and applying an organometallic resist solution over the priming material on the substrate, thereby forming an organometallic resist layer over the priming material. The priming material includes water.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: November 17, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chih Ho, An-Ren Zi, Ching-Yu Chang
  • Patent number: 10831101
    Abstract: A photosensitive resin composition containing a resin and a compound each having a structure specified by the present specification provides a cured film having excellent adhesiveness to copper wiring.
    Type: Grant
    Filed: March 28, 2017
    Date of Patent: November 10, 2020
    Assignee: ASAHI KASEI KABUSHIKI KAISHA
    Inventors: Tomohiro Yorisue, Taihei Inoue, Yoshito Ido, Mitsutaka Nakamura, Tomoshige Yunokuchi, Daisuke Sasano, Takahiro Sasaki
  • Patent number: 10831102
    Abstract: Photoactive polymer brush materials and methods for EUV photoresist patterning using the photoactive polymer brush materials are described. The photoactive polymer brush material incorporates a grafting moiety that can be immobilized at the substrate surface, a dry developable or ashable moiety, and a photoacid generator moiety, which are bound to a polymeric backbone. The photoacid generator moiety generates an acid upon exposure to EUV radiation acid at the interface, which overcomes the acid depletion problem to reduce photoresist scumming. The photoacid generator moiety can also facilitate cleavage of the photoactive polymer brush material from the substrate via an optional acid cleavable grafting functionality for the grafting moiety. The dry developable or ashable moiety facilitates complete removal of the photoactive brush material from the substrate in the event there is residue present subsequent to development of the chemically amplified EUV photoresist.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: November 10, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ekmini A. De Silva, Rudy J. Wojtecki, Dario Goldfarb, Daniel P. Sanders, Nelson Felix
  • Patent number: 10831100
    Abstract: A photoacid generator compound having formula (I): wherein, in formula (I), groups and variables are the same as described in the specification.
    Type: Grant
    Filed: November 20, 2017
    Date of Patent: November 10, 2020
    Assignee: ROHM AND HAAS ELECTRONIC MATERIALS, LLC
    Inventors: Emad Aqad, James W. Thackeray
  • Patent number: 10824073
    Abstract: A radiation-sensitive resin composition includes a first compound represented by formula (1), a first polymer comprising an acid-labile group, and a radiation-sensitive acid generator other than the first compound. The radiation-sensitive acid generator includes an onium salt compound. In the formula (1), n is 2 or 3; m is 1 or 2; Y+ represents a monovalent radiation-sensitive onium cation; and L represents a single bond or an organic group having a valency of n. L includes linking moieties each linking two of the carboxylate groups in formula (1). Number of atom(s) included in a linking moiety having a minimum number of bonds among the linking moieties is 0 to 10. In a case where L represents a single bond, n is 2, and in a case where n is 2, m is 1.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: November 3, 2020
    Assignee: JSR CORPORATION
    Inventors: Katsuaki Nishikori, Hayato Namai
  • Patent number: 10816900
    Abstract: A polymer of a polyimide precursor which includes a structural unit represented by the following general formula (7), where X1 represents a tetravalent organic group, X2 represents a divalent organic group, and R1 represents a group represented by the following general formula (2), where the dotted line represents a bonding, Y1 represents an organic group with a valency of k+1, Rs represents a group containing at least one silicon atom, “k” represents 1, 2 or 3, and “n” represents 0 or 1.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: October 27, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Hiroyuki Urano, Katsuya Takemura, Masashi Iio, Koji Hasegawa, Kenji Funatsu
  • Patent number: 10809617
    Abstract: A resist composition comprising a base polymer and a sulfonium salt of iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: October 20, 2020
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Masaki Ohashi
  • Patent number: 10809619
    Abstract: A resist underlayer film for use in lithography process which generates less sublimate, has excellent embeddability at the time of applying onto a substrate having a hole pattern, and has high dry etching resistance, wiggling resistance and heat resistance, etc. A resist underlayer film-forming composition including a resin and a crosslinkable compound of Formula (1) or Formula (2): in which Q1 is a single bond or an m1-valent organic group, R1 and R4 are each a C2-10 alkyl group or a C2-10 alkyl group having a C1-10 alkoxy group, R2 and R5 are each a hydrogen atom or a methyl group, R3 and R6 are each a C1-10 alkyl group or a C6-40 aryl group.
    Type: Grant
    Filed: June 24, 2014
    Date of Patent: October 20, 2020
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Keisuke Hashimoto, Kenji Takase, Tetsuya Shinjo, Rikimaru Sakamoto, Takafumi Endo, Hirokazu Nishimaki
  • Patent number: 10802399
    Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having a low LWR and is further suppressed in the collapse of the formed pattern, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a photoacid generator represented by General Formula (1) or a resin having a residue obtained by removing one hydrogen atom from the photoacid generator represented by General Formula (1).
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: October 13, 2020
    Assignee: FUJIFILM Corporation
    Inventors: Ryo Nishio, Masafumi Kojima, Akiyoshi Goto, Tomotaka Tsuchimura, Michihiro Shirakawa, Keita Kato
  • Patent number: 10795259
    Abstract: The present invention relates to a photo-curable and heat-curable resin composition including: an acid-modified oligomer having a photo-curable functional group having an acrylate group or an unsaturated double bond, and a carboxyl group in the molecule; a photopolymerizable monomer having at least two photo-curable unsaturated functional groups; a heat-curable binder having a heat-curable functional group; a plate-like inorganic filler having an E-modulus of 90 to 120 (Gpa); a dispersant; and a photo-initiator, and a dry film solder resist prepared therefrom.
    Type: Grant
    Filed: February 3, 2017
    Date of Patent: October 6, 2020
    Assignee: LG CHEM, LTD.
    Inventors: Byung Ju Choi, You Jin Kyung, Woo Jae Jeong, Bo Yun Choi, Min Su Jeong
  • Patent number: 10795261
    Abstract: An additive for a resist underlayer film-forming composition, including a copolymer having structural units of the following Formulae (1) to (3): wherein R1s are each independently a hydrogen atom or a methyl group, R2 is a C1-3 alkylene group, A is a protecting group, R3 is an organic group having 4 to 7-membered ring lactone skeleton, adamantane skeleton, tricyclodecane skeleton, or norbornane skeleton, and R4 is a linear, branched, or cyclic organic group having a carbon atom number of 1 to 12, wherein at least one hydrogen atom is substituted with a fluoro group and that optionally has at least one hydroxy group as a substituent. A resist underlayer film-forming composition for lithography including additive, a resin that is different from copolymer, organic acid, crosslinker, and solvent, wherein the copolymer's content is 3 parts by mass to 40 parts by mass relative to 100 parts by mass of the resin.
    Type: Grant
    Filed: November 8, 2016
    Date of Patent: October 6, 2020
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Tokio Nishita, Rikimaru Sakamoto
  • Patent number: 10784100
    Abstract: A processing chamber system includes a substrate mounting module configured to secure a substrate within a first processing chamber. The system also includes a first deposition module configured to apply a light-sensitive film to a front side surface of the substrate, and a second deposition module configured to apply a film layer to a backside surface of the substrate. The front side surface is opposite to the backside surface of the substrate. A substrate has a bare backside surface with a first coefficient of friction. A film layer is formed onto the backside surface of the substrate. The film layer formed on the backside surface of the substrate has a second coefficient of friction. The second coefficient of friction is lower than the first coefficient of friction.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: September 22, 2020
    Assignee: Tokyo Electron Limited
    Inventor: Hoyoung Kang
  • Patent number: 10781276
    Abstract: An object of the present invention is to provide a polymer used for a resist composition having high absorption efficiency for a particle beam or an electromagnetic wave, and excellence in sensitivity, resolution and pattern performance characteristics, and provide a resist composition containing the polymer and a method of manufacturing a device using thereof. The polymer comprises: a unit A; and a unit B, wherein the unit A has an onium salt structure and generates a first radical by irradiation with a particle beam or an electromagnetic wave, the unit B has a radical generating structure containing at least one multiple bond which is between a carbon atom and a carbon atom or between a carbon atom and a heteroatom, and generates a second radical by irradiation with a particle beam or an electromagnetic wave, and the multiple bond is not one contained in a benzenoid aromatic.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: September 22, 2020
    Assignee: TOYO GOSEI CO., LTD.
    Inventors: Satoshi Enomoto, Takumi Yoshino
  • Patent number: 10775699
    Abstract: Disclosed is a negative photoresist composition for a KrF laser, having high resolution and a high aspect ratio and, more particularly, a negative photoresist composition for a KrF laser, which includes a specific additive in order to improve the properties of a conventional negative photoresist, whereby the negative photoresist composition can prevent fine-pattern collapse even using a short-wavelength exposure light source, compared to conventional negative photoresists, and can also exhibit high resolution and a high aspect ratio and is thus suitable for use in semiconductor processing.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: September 15, 2020
    Assignee: YOUNG CHANG CHEMICAL CO., LTD
    Inventors: Seung Hun Lee, Seung Hyun Lee, Su Jin Lee, Young Cheol Choi
  • Patent number: 10767015
    Abstract: The present invention makes it possible to provide an optical material composition containing an episulfide compound (A), a polythiol compound (B), and a photochromic compound (C). The episulfide compound (A) is preferably a compound represented by formula (1), and the polythiol compound (B) is preferably a compound represented by formula (6). (In formula (1), m represents an integer of 0 to 4, and n represents an integer of 0 to 2.) (In formula (6), n represents an integer of 4 to 20, and R1 and R2 may be the same or different and represent H, SH, C1-10 alkyl groups, or C1-10 alkylthiol groups.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: September 8, 2020
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Kota Kinjo, Yoshiaki Yamamoto, Hiroshi Horikoshi
  • Patent number: 10761426
    Abstract: The pattern forming method includes forming an actinic ray-sensitive or radiation-sensitive film using an actinic ray-sensitive or radiation-sensitive composition, forming an upper layer film using a composition for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film, exposing the actinic ray-sensitive or radiation-sensitive film having the upper layer film formed thereon, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the composition for forming an upper layer film includes a resin and at least one of a compound capable of generating an acid with actinic rays or radiation, a compound capable of generating an acid with heat, and an acid, in which the resin includes a repeating unit represented by General Formula (II). The method for manufacturing an electronic device includes the pattern forming method. A laminate includes the film and the upper layer film.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: September 1, 2020
    Assignee: FUJIFILM Corporation
    Inventors: Hideaki Tsubaki, Wataru Nihashi, Toru Tsuchihashi, Kei Yamamoto
  • Patent number: 10761424
    Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having a low LWR and is further suppressed in the collapse of the formed pattern, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a photoacid generator represented by General Formula (1) or a resin having a residue obtained by removing one hydrogen atom from the photoacid generator represented by General Formula (1).
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: September 1, 2020
    Assignee: FUJIFILM Corporation
    Inventors: Ryo Nishio, Masafumi Kojima, Akiyoshi Goto, Tomotaka Tsuchimura, Michihiro Shirakawa, Keita Kato
  • Patent number: 10754248
    Abstract: The present invention provides a sulfonium salt capable of providing a resist composition having few defects in photolithography where a high energy beam is used as a light source, and excellent in lithography performance by controlling acid diffusion.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: August 25, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takayuki Fujiwara, Ryo Mitsui, Kazuhiro Katayama
  • Patent number: 10725378
    Abstract: A resist composition comprising a base polymer and a sulfonium or iodonium salt of brominated benzene-containing fluorinated sulfonic acid offers a high sensitivity and minimal LWR or improved CDU independent of whether it is of positive or negative tone.
    Type: Grant
    Filed: May 16, 2018
    Date of Patent: July 28, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Masaki Ohashi