Abstract: The pattern forming method includes forming an actinic ray-sensitive or radiation-sensitive film using an actinic ray-sensitive or radiation-sensitive composition, forming an upper layer film using a composition for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film, exposing the actinic ray-sensitive or radiation-sensitive film having the upper layer film formed thereon, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the composition for forming an upper layer film includes a resin and at least one of a compound capable of generating an acid with actinic rays or radiation, a compound capable of generating an acid with heat, and an acid, in which the resin includes a repeating unit represented by General Formula (II). The method for manufacturing an electronic device includes the pattern forming method. A laminate includes the film and the upper layer film.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having a low LWR and is further suppressed in the collapse of the formed pattern, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a photoacid generator represented by General Formula (1) or a resin having a residue obtained by removing one hydrogen atom from the photoacid generator represented by General Formula (1).

Abstract: The present invention provides a sulfonium salt capable of providing a resist composition having few defects in photolithography where a high energy beam is used as a light source, and excellent in lithography performance by controlling acid diffusion.

Abstract: A resist composition comprising a base polymer and a sulfonium or iodonium salt of brominated benzene-containing fluorinated sulfonic acid offers a high sensitivity and minimal LWR or improved CDU independent of whether it is of positive or negative tone.

Abstract: In one aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. In another aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise a component comprising a hydroxyl-naphthoic group, such as a 6-hydroxy-2-naphthoic group Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

Abstract: A chemically amplified resist composition comprising a quencher containing a quaternary ammonium iodide, dibromoiodide, bromodiiodide or triiodide, and an acid generator exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.

Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate, a hard mask layer formed over the bottom layer, a material layer formed over the hard mask layer, and a photoresist layer formed over the material layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, where the developing removes portions of the photoresist layer and the material layer in a single step without substantially removing portions of the hard mask layer, and etching the hard mask layer using the photoresist layer as an etch mask. The material layer may include acidic moieties and/or acid-generating molecules. The material layer may also include photo-sensitive moieties and crosslinking agents.

Abstract: A composition includes at least one of particles having an average primary particle diameter of 50 to 150 nm or particles having an average major axis length of 50 to 150 nm, and a resin, in which the composition has an L* in an L*a*b* color space of CIE 1976 of 35 to 75 in a case of forming a film with a thickness of 3 ?m using the composition. A film; a cured film; an optical sensor; and a method for producing a film each use the composition.

Abstract: The pattern forming method includes forming an actinic ray-sensitive or radiation-sensitive film using an actinic ray-sensitive or radiation-sensitive composition, forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film using a composition for forming an upper layer film, exposing the actinic ray-sensitive or radiation-sensitive film having the upper layer film formed thereon, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer, in which the composition for forming an upper layer film includes a solvent and a crosslinking agent; and in which the content of a solvent having a hydroxyl group is 80% by mass or less with respect to all the solvents included in the composition for forming an upper layer film. The method for manufacturing an electronic device includes the pattern forming method. The laminate has an actinic ray-sensitive or radiation-sensitive film, and an upper layer film including a crosslinking agent.

Abstract: The present invention relates to a shrink material composition for fattening a resist pattern prepared from a negative-tone lithography process, comprising at least one polymer and at least one organic solvent, wherein the at least one polymer comprises at least one structural unit of a nitrogen heteroaromatic ring system.

Abstract: A photosensitive resin composition comprises: a resin having a phenolic hydroxyl group; a photosensitive acid generator; a compound having at least one selected from the group consisting of an aromatic ring, a heterocycle and an alicycle, and at least one selected from the group consisting of a methylol group and an alkoxyalkyl group; and an aliphatic compound having two or more functional groups, the functional groups being at least one functional group selected from the group consisting of an acryloyloxy group, a methacryloyloxy group, a glycidyloxy group, an oxetanyl alkyl ether group, a vinyl ether group and a hydroxyl group, wherein the photosensitive acid generator is a sulfonium salt containing an anion having at least one skeleton selected from the group consisting of a tetraphenylborate skeleton, an alkylsulfonate skeleton having 1 to 20 carbon atoms, a phenylsulfonate skeleton and a 10-camphorsulfonate skeleton.

Abstract: A resist composition comprising a base polymer and a quencher in the form of an iodonium salt of fluorinated aminobenzoic acid, fluorinated nitrobenzoic acid or fluorinated hydroxybenzoic acid offers a high dissolution contrast and minimal LWR independent of whether it is of positive or negative tone.

Abstract: A resist composition including a base component which exhibits changed solubility in a developing solution under action of acid, and a compound (B1) having an anion moiety and a cation moiety and being represented by general formula (b1) (wherein R01 to R014 each independently represents a hydrogen atom or a hydrocarbon group which may have a substituent, or two or more of R01 to R014 may be mutually bonded to form a ring structure, provided that at least two of R01 to R014 are mutually bonded to form a ring structure, and at least one of R01 to R014 has an anion group, and the anion moiety as a whole forms an anion having a valency of n; n represents an integer of 1 or more; represents an integer of 1 or more; and Mm+ represents an organic cation having a valency of m).

Abstract: The present invention provides a resist base material containing a compound having a specific structure and/or a resin derived from the compound as a monomer.

Abstract: Embodiments in accordance with the present invention encompass self-imageable polymer compositions containing a variety of photobase generators which are useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays. The compositions of this invention can be tailored to form positive tone or negative tone images depending upon the intended application in aqueous developable medium. The images formed therefrom exhibit improved properties including low wafer stress and better thermo-mechanical properties, among other property enhancements.

Abstract: Embodiments in accordance with the present invention relate generally to polycarbonate polymers having repeat units derived from adamantane epoxide monomers and methods of using such polymers and compositions containing them. The compositions thus formed are useful in a variety of optoelectronic device fabrications.

Abstract: A resist composition which generates an acid when exposed and whose solubility in a developer is changed by an action of an acid, the resist composition including: a base material component (A) whose solubility in a developer is changed by an action of an acid, in which the base material component (A) comprises a polymer compound (A1) having a constitutional unit (a01) represented by Formula (a0-1) and a constitutional unit (a1) which comprises an acid-decomposable group whose polarity is increased due to an action of an acid, and the constitutional unit (a1) comprises a constitutional unit containing an acid-dissociable group represented by Formula (a1-r-1) and a constitutional unit containing an acid-dissociable group represented by Formula (a1-r-2).

Abstract: A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent, WX)n??(1) W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10, The dotted line represents a bonding arm. R01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

Abstract: A chemically amplified positive-type photosensitive resin composition that can be well developed with an aqueous basic solution having low pH, a substrate with a photosensitive film formed from the composition, and a method for patterned resist film formation using the composition. The composition includes an acid generator that produces an acid upon irradiation with an active ray or radiation; a resin whose solubility in alkali increases under the action of acid; and an organic solvent, in which a predetermined amount of an alkali-soluble resin soluble in an aqueous basic solution having a pH of 12 and containing alkali-soluble groups with hydrogen atoms in at least a part thereof is substituted with an acid-dissociative dissolution-controlling group contained in the resin.

Abstract: A monomer of formula (1a) or (1b) is provided wherein A is a polymerizable group, R1-R6 are monovalent hydrocarbon groups, X1 is a divalent hydrocarbon, group, Z1 is an aliphatic group, Z2 forms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer.