Abstract: Disclosed is a non-volatile memory device and a method of programming the same. The non-volatile memory device is programmed by applying a wordline voltage, a bitline voltage, and a bulk voltage to memory cells within the device. During a programming operation for the device, the bulk voltage is generated by a first pump. However, where the bulk voltage exceeds a predetermined detection voltage, a second pump is further activated in order to lower the bulk voltage.

Abstract: Methods for controlling the timing of a pre-charge operation in a memory device are provided. In embodiments of the present invention, the timing may be controlled by dynamically selecting a word line off time based on information about a number of column cycles. This may be accomplished, for example, by routing a word line disable signal via one of a first plurality of delay paths. The methods may further include dynamically selecting a bit line equalization start time based on the information about the number of column cycles. This may be accomplished, for example, by routing a bit line equalization start signal via one of a second plurality of delay paths. Pursuant to still further embodiments of the present invention, systems for controlling timing in a memory device are provided which include a control circuit that is configured to select a word line off time from a plurality of word line off times in response to a word line signal and information about a number of column cycles.

Abstract: A low-power delay buffer circuit is provided, which utilizes a ring counter as address decoder and a latch array for memory. To reduce power consumption, a gated-clock driver tree is applied to the ring-counter addressing architecture. Moreover, a similar gated-driver tree is applied to the input and output ports of the latch array. The delay buffer circuit not only could achieve a power consumption lower than SRAM-based delay buffers, but also could operation under high frequencies and take up less layout area than SRAM-based delay buffers.

Abstract: The present invention relates to a synchronous semiconductor memory device with double data rate, and more particularly, to a synchronous semiconductor memory device for inputting and outputting data using a free-running clock and inserting a preamble indicative of start of data into the outputted data. A semiconductor memory device of the present invention receives a data read command from the exterior of the memory device in response to a predetermined clock signal inputted from the exterior, and outputting data including a preamble in response to the clock signal.

Abstract: A data path for coupling data between a memory cell and an input/output (IO) line sense amplifier. An IO line coupling circuit is coupled to a pair of global data lines and a pair of local data lines to couple and decouple each of the global data lines to and from a voltage supply based on the voltage levels of the local data lines for the memory read operation. For the memory write operation, the IO line coupling circuit couples and decouples each of the global data lines to and from a respective one of the local data lines. The data path also includes a first precharge circuit coupled to the global data lines to couple the global data lines to ground to precharge the signal lines prior to a memory read or write operation, and can further include a test compression circuit coupled to the global data lines.

Abstract: A nonvolatile ferroelectric perpendicular electrode cell comprises a ferroelectric capacitor and a serial PN diode switch. The ferroelectric capacitor includes a word line perpendicular electrode as a first electrode and a storage perpendicular electrode as a second electrode apart at a predetermined interval from the word line perpendicular electrode to have a column type, where a ferroelectric material is filled in a space where the first electrode are separated from the second electrode. The serial PN diode switch, which is connected between a bit line and the ferroelectric capacitor, selectively switches a current direction between the bit line and the ferroelectric capacitor depending on voltage change between the bit line and the ferroelectric capacitor.

Abstract: A cell array in the semiconductor memory device is divided into two blocks. Each of control signal lines for transmission of control signals are also divided into a first portion and a second portion correspondingly to the blocks. A repeater circuit that relays a control signal is provided between the two portions. The repeater circuit does not output the control signal from the first portion to the second portion, as long as a block that receives the control signal via the first portion is selected.

Abstract: A nonvolatile SRAM array has an array of integrated nonvolatile SRAM circuits arranged in rows and columns on a substrate. Each of the integrated nonvolatile SRAM circuits includes an SRAM cell, a first and second nonvolatile memory element. The SRAM cell has a latched memory element in communication first and second nonvolatile memory elements to receive and permanently retain the digital signal from the latched memory element. A power detection circuit detects a power interruption and a power initiation and communicates the detection of the power interruption and power initiation to the plurality of integrated nonvolatile SRAM circuits. The SRAM cell, upon detection of the power interruption, transmits the digital signal to the first and second nonvolatile memory elements. The SRAM cell of each of the nonvolatile static random access memories upon detection of the power initiation, receives the digital signal from the first and second nonvolatile memory elements.

Abstract: A memory card and a microcomputer with nonvolatile memory wherein operation under two different types of power supply specifications achieved are provided. A MultiMediacard includes a flash memory and with the flash memory. When the controller judges the level of supply voltage supplied from host equipment, operates as follows: the controller judges whether detecting point corresponding to voltage level 1.8V system been exceeded. After the judgment of excess, the controller judges whether detecting point corresponding to the voltage level system has been exceeded. When the 1.8V system, flash memory to operate the controller causes the 1.8v-system operation mode without driving regulators voltage level shifters. When the supply voltage level 3.3V system, the controller drives the regulators and the level shifters convert the voltage level causes the flash memory operate the 3.3V-system operation mode.

Abstract: A data write circuit of a semiconductor storage device is provided in which a multi-bit write method can be employed even if data input takes a long time. The data write circuit includes a multi-bit decoder and data latch circuit for sequentially latching a plurality of data to be respectively written to a plurality of memory cells of multi-bits and are sequentially input in accordance with a change of an input multi-bit address, a column decoder for respectively applying latched data to sources of the memory cells based on a column address among the input address, and a cell drain voltage generator for simultaneously applying high cell drain voltage (approx. 5.0 volts) for writing data to the drains of the memory cells when all of the data are latched and are applied to the sources of the memory cells so as to respectively write the data to the memory cells.

Abstract: A dual edge multiplexing flip-flop comprises a first circuit block having a first data input, a first clock signal input, a supply voltage input, and a ground connection; a second circuit block having a second data input, a second clock signal input, a supply voltage input, and a ground connection. Each circuit block is coupled to a common output node. When a common clock signal is input into the clock signal inputs, each circuit block outputs a floating voltage during one half of each clock cycle and a voltage indicative of a corresponding data input signal during the other half of each clock cycle.

Abstract: A semiconductor memory device comprising: a memory array including a plurality of memory cells; a plurality of word lines corresponding to the respective memory cells; a pair of local bit lines corresponding to the memory array; a pair of global bit lines corresponding to the pair of local bit lines; a precharge circuit including an output terminal being connected to the pair of local bit lines; a local write amplifier circuit including a data input terminal being connected to the pair of global bit lines and an output terminal being connected to the pair of local bit lines; and a control signal line being connected to an input terminal of the precharge circuit and to a control input terminal of the local write amplifier circuit, wherein the local write amplifier circuit is deactivated by the control signal line when the precharge circuit is activated, and the precharge circuit is deactivated by the control signal line when the local write amplifier circuit is activated.

Abstract: A method for the manufacture of a ferroelectric memory. The ferroelectric memory includes a plurality of memory cells for storing binary data as polarization states of a ferroelectric. The method includes a data writing step of writing those binary data which will be read at a potential level lower than a reference potential level during data reading, to all of the memory cells prior to a heat treatment step.

Abstract: The invention is directed to data input/output organization system and method in a semiconductor memory device. The memory device has a plurality of memory arrays, in one embodiment, an odd number of memory arrays. The arrays are divided into blocks, and the blocks are divided into segments. A control circuit provides control signals to the memory arrays such that data is input and/or output to and from the memory device in multiples of nine bits. The data bits are input or output simultaneously without the need for multiplexing circuitry. This results in reduced power consumption and increased memory processing speed.

Abstract: A redundancy address decoder for a memory having at least one bank of memory segmented into a plurality of memory blocks. The redundancy address decoder includes a plurality of redundancy comparison circuitry coupled to a respective programmable element block storing addresses that are mapped to redundant memory of a memory plane. The redundancy address decoder further includes redundancy driver select logic coupled to each of the redundancy comparison circuitry to activate a selected one of the redundancy comparison circuitry for comparing a portion of a memory address corresponding to a memory location with the programmed addresses of the respective programmable element blocks, which leads to power reduction for column accesses to the memory device. The selection of the redundancy driver is based on the memory bank in which the memory location is located.

Abstract: A register file method incorporating read-after-write blocking using detection cells provides improved read access times in high performance register files. One or more detection cells identical to the register file cells and located in the register file array are used to control the read operation in the register file by configuring the detection cells to either alternate value at each write or change to a particular value after a write and then detecting when the write has completed by detecting the state change of an active detection cell. The state change detection can be used to delay the leading edge of a read strobe or may be used in the access control logic to delay generation of a next read strobe. The register file thus provides a scalable design that does not have to be tuned for each application and that tracks over voltage and clock skew variation.

Abstract: Methods and systems for generating a latch clock in memory reading. Data with a first logic level and with a second logic level are stored into a first address and a second address of a memory, respectively. A read data signal is generated by issuing continuous read commands for repeated retrieval of the data at the first and the second addresses of the memory. A divided frequency signal is generated by dividing a frequency of the internal clock. A phase of the divided frequency signal is adjusted according to a delay parameter by varying the delay parameter until at least an edge of the divided frequency signal is aligned with any edge of the read data signal. Finally, the latch clock is generated according to the delay parameter and the internal clock.

Abstract: An electrically erasable and programmable memory includes a memory array and a non-volatile register integrated with the memory array. The memory array includes normal memory cells arranged in rows and columns. Normal bit lines are coupled to the columns of the normal memory cells, and word lines are coupled to the rows of the normal memory cells. The non-volatile register includes at least one memory point. Each memory point includes at least one normal memory cell coupled to one of the normal bit lines. Each normal memory cell includes a floating-gate transistor having a floating gate and a tunnel window associated with the floating gate. A selection transistor is coupled to the floating-gate transistor. Each memory point further includes at least one special memory cell including a floating-gate transistor having a floating gate coupled to the floating gate of the normal memory cell. The special memory cell is devoid of a tunnel window.

Abstract: The present invention is a multi-phase method, circuit and system for programming non-volatile memory (“NVM”) cells in an NVM array. The present invention may include a controller to determine when, during a first programming phase, one or more NVM cells of a first set of cells reaches or exceeds to first intermediate voltage, and to cause a charge pump circuit to apply to a terminal of the one or more cells in the first set second phase programming pulses to induce relatively greater threshold voltage changes in cells having less stored charge than in cells having relatively more stored charge.

Abstract: A method and circuit for refreshing dynamic memory cells arranged along word lines and bit lines are provided, the memory cells being refreshed in a manner dependent on a refresh signal with a refresh frequency by the activation of the word line in order to write the information back to the memory cells arranged on the relevant word line, in which case the refresh frequency is set in a manner dependent on the charge loss of first dummy memory cells during a refresh period of the refresh signal on a first dummy word line and/or in a manner dependent on the charge loss of second dummy memory cells during the refresh period of the refresh signal on a second dummy word line.