Abstract: A roof ventilation system having a housing with an integrated fan and power source, such as a solar panel, for integration into a roof ridge vent or a roof soffit and having a flexible center area to adjust the profile of the housing to accommodate the profile of the roof ridge vent or roof soffit.

Abstract: Provided is a thermoelectric element assembly including a soft support including a plurality of through-holes, and a plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements inserted into a plurality of through-holes of the support, wherein a thickness of the support is less than a length of the thermoelectric element.

Abstract: An integrated building photovoltaic apparatus for closing an opening on a building facade and generating electricity from a solar radiation which pass through the opening, includes at least two panes that are at least partially transparent and joined to each other by an interposed spacer to form an internal chamber therebetween; a blind arranged inside the internal chamber and having movable photovoltaic slats to vary the amount of the solar radiation passing through the opening; and connection elements, configured to pull or push the photovoltaic slats. Each slat has a photovoltaic sheet with interconnection grooves which define thin film solar cells monolithically connected in series. The solar cells include at least two coupling thin film solar cells (40?), each one having a through hole and a close-pattern isolation groove surrounding the through hole to define an inactive area of the coupling single thin film solar cell surrounding the through hole.

Abstract: A polymer solar cell includes a photoactive layer, a cathode electrode, and an anode electrode. The photoactive layer includes a polymer layer and a carbon nanotube layer. The polymer layer includes a first polymer surface and a second polymer surface opposite to the first polymer surface. A portion of the carbon nanotube layer is embedded in the polymer layer, and another portion of the carbon nanotube layer is exposed from the polymer layer. The cathode electrode is located a surface of the carbon nanotube layer away from the polymer layer. The anode electrode is located on the first polymer surface and spaced apart from the carbon nanotube layer. The entire second polymer surface is exposed.

Abstract: The present invention relates to a photovoltaic plant including a plurality of units each having at least one respective photovoltaic panel, a support structure of the plurality of units designed to support the latter at a distance from the ground (GR).

Abstract: An energy harvester, wherein it comprises: a flat plate-like energy harvesting part having a power generation region which generates electric power by utilizing an energy in the external environment and an internal wiring to which the electric power thus generated is supplied; a connector part connectable to an external device; a diode of which anode is electrically connected with the internal wiring; and a flexible wiring sub state on which the diode and a connection part for electrically connecting a cathode of the diode to the connector part are provided, wherein the internal wiring extends from the power generation region to a side edge portion of the energy harvesting part, and at least a portion of the flexible wiring substrate is provided in the side edge portion so as to overlap a portion of the internal wiring.

Abstract: A solar cell in which performance degradation caused by an alkali component is suppressed. A solar cell is a back-contact solar cell that comprises a semiconductor substrate; a p-type semiconductor layer, and a first electrode layer corresponding thereto, layered sequentially on one part of the rear side of the semiconductor substrate; an n-type semiconductor layer, and a second electrode layer corresponding thereto, layered sequentially on another part of the rear side of the semiconductor substrate. One part of the n-type semiconductor layer lies directly atop one part of the adjacent p-type semiconductor layer. The first electrode layer is separate from the n-type semiconductor layer and covers the p-type semiconductor layer. The second electrode layer covers the entirety of an overlapping portion where the n-type semiconductor layer lies atop the p-type semiconductor layer.

Abstract: Embodiments relate to systems designed for thermal transfer augmentation and thermionic energy harvesting. Thermionic energy harvesters are configured to supply electricity for applications such as electronics, communications, and other electrical devices. Thermal transfer may be used for a variety of heating/cooling and power generation/heat recovery systems, such as, refrigeration, air conditioning, electronics cooling, industrial temperature control, waste heat recovery, off-grid and mobile refrigeration, and cold storage.

Abstract: In one aspect, window inserts are described herein, which can modulate transmission of electromagnetic radiation through a window and can be self-powered. In some embodiments, a window insert comprises a photovoltaic device, the photovoltaic device including a photosensitive layer having peak absorption between 250 nm and 450 nm and an average transmittance of at least 50 percent in the visible region of the electromagnetic spectrum.

Abstract: The present disclosure relates to an integrated dual-sided all-in-one energy system including a plurality of vertically stacked dual-sided all-in-one energy apparatuses, each including an energy-harvesting device and an energy-storage device disposed on both sides of a substrate, and according to one embodiment of the present disclosure, an integrated dual-sided all-in-one energy system may include a plurality of dual-sided all-in-one energy apparatuses, each including an energy-harvesting device that is formed as an electrode pattern on one side of a substrate and generates electrical energy by harvesting energy based on a temperature difference between a first side and a second side and an energy-storage device that is formed on the other side of the substrate and is selectively connected to the energy-harvesting device based on the electrode pattern to store the generated electrical energy.

Abstract: An organic light emitting display device is provided. The organic light emitting display device includes at least two or more light emitting parts between an anode and a cathode and each having a light emitting layer. At least one of the at least two or more light emitting parts includes an organic layer. The organic layer is formed of a compound comprising a functional group that reacts with alkali metals or alkali earth metals and a functional group with electron transport properties.

Abstract: A material for an organic electroluminescent device that is excellent in hole injection and transport abilities, electron blocking ability, stability in a thin film state, and durability is provided as a material for an organic electroluminescent device having high efficiency and high durability. Further, an organic electroluminescent device having low driving voltage, high efficiency, and a long lifetime is provided by combining the material with various materials for an organic EL device that is excellent in hole and electron injection and transport abilities, electron blocking ability, thin film stability, and durability, in such a manner that the characteristics of the materials can be effectively exhibited. An organic electroluminescent device comprising at least an anode, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode in this order, wherein the hole transport layer comprises an arylamine compound of the following general formula (1).

Abstract: A solar cell panel includes a plurality of solar cells including first and second solar cells, and a plurality of wiring members electrically connecting the first and second solar cells. A first electrode of each of the first and second solar cells includes a first bus bar including a plurality of first pad portions. The plurality of first pad portions include a first end pad positioned on one end side of the first bus bar and on which an end of the wiring member is positioned, and a first extension pad positioned on the other end side of the first bus bar and on an extension of the wiring member. An area of the first end pad is different from an area of the first extension pad.

Abstract: A heat pump that includes a thermoelectric device(s) and a heat sink having a raised portion with a top surface for thermally coupling with a planar face of the thermoelectric device(s). The raised portion of the heat sink includes an outer periphery and a raised central region surrounded by a void region to provide more uniform thermal conductivity when clamped within an assembly. The raised central region is shaped in an any shape corresponding to a shape of uneven thermal conductivity due to clamping pressure applied to the heat sink. The void region can be substantially contiguous and entirely circumscribe the central raised region. The device can optionally include discrete supports formed of a less thermally-conductive material within the void region. The supports can be elastomeric, such as O-rings, and disposed within pockets defined within the void region.

Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.

Abstract: The present invention provides: a thermoelectric conversion material capable of being produced in a simplified manner and at a lower cost and excellent in thermoelectric performance and flexibility, and a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound. The method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound includes a step of applying a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound onto a support and drying it to form a thin film thereon, and a step of annealing the thin film.

Abstract: Systems for generating solar power are provided. One such system includes a solar radiation collector and one or more side-emitting fiber-optic cables, coupled to the solar radiation collector. The system further includes one or more photovoltaic cell enclosures, including an outer housing and one or more photovoltaic cells, wherein the one or more side-emitting fiber-optic cables is positioned within the outer housing and configured to emit, to the one or more photovoltaic cells, solar radiation collected from the solar radiation collector.

Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

Abstract: The present disclosure provides a thin-film photovoltaic cell with a high photoelectric conversion rate and a preparation process thereof. The thin-film photovoltaic cell comprises a transparent substrate and photovoltaic units which are disposed on the transparent substrate and arranged toward the display module, and the photovoltaic unit disposed in the display area comprises a transparent front electrode disposed on the transparent substrate, a light absorption layer disposed on the transparent front electrode and a transparent back electrode disposed on the light absorption layer; and the photovoltaic unit disposed in the non-display area comprises a transparent front electrode disposed on the transparent substrate, a light absorption layer disposed on the transparent front electrode and a metal back electrode disposed on the light absorption layer.

Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.