Abstract: A chemical mechanical polishing aqueous dispersion that is used to polish a polishing target that includes a wiring layer that contains tungsten, the chemical mechanical polishing aqueous dispersion including: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica having an average particle diameter calculated from a specific surface area determined by the BET method of 10 to 60 nm, the content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MC) (mass %) of the colloidal silica (C) satisfying the relationship “MA/MC=0.0001 to 0.003”, and the chemical mechanical polishing aqueous dispersion having a pH of 1 to 3.

Abstract: A method of manufacturing a perpendicular magnetic write head capable of precisely narrowing a side gap is provided. A tip portion having a cross sectional geometry of an inverted trapezoid is formed in an opening portion of a non-magnetic layer and thereafter, the non-magnetic layer is etched with the tip portion as a mask. Thereby, a portion adjacent to the tip portion in a writing track width direction remains and an outermost edge portion of the tip portion in that direction is located on a plane which coincides with an etching face (side face) of the non-magnetic layer. When a gap layer is formed with a vapor phase growth such as a sputtering method to cover the side face of the non-magnetic layer and thereafter a side shield layer is formed adjacently to the tip portion therethrough, a thickness of the gap layer becomes extremely thin and is reproduced precisely. Therefore, the side gap is narrowed with high precision.

Abstract: The present invention provides a crystal oscillator piece in which the cross section of its vibrating tine, while not symmetrical in shape, has a principal axis that is oriented parallel to an X axis to suppress the generation of leakage vibration, and a method for manufacturing such a crystal oscillator piece.

Abstract: A method and apparatus are provided for processing a substrate with a radiofrequency inductive plasma in the manufacture of a device. The inductive plasma is maintained with an inductive plasma applicator having one or more inductive coupling elements. There are thin windows between the inductive coupling elements and the interior of the processing chamber. Various embodiments have magnetic flux concentrators in the inductive coupling elements and feed gas holes interspersed among the inductive coupling elements. The thin windows, magnetic flux concentrators, and interspersed feed gas holes are useful to effectuate uniform processing, high power transfer efficiency, and a high degree of coupling between the applicator and plasma. In some embodiments, capacitive current is suppressed using balanced voltage to power an inductive coupling element.

Abstract: A method for patterning a material is provided. The method includes patterning a second material over a first material over a substrate. A surface portion of the patterned second material is converted to form a third material and a remaining patterned second material, wherein the third material is around the remaining patterned second material. One of the remaining patterned second material and the third material is removed to form a mask. The first material is patterned by using the mask.

Abstract: A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and a substance according to formula I wherein R1, R2 and R3 are each independently selected from a C1-4 alky group; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein the substance according to formula I included in the chemical mechanical polishing composition provides an enhanced silicon oxide removal rate and an improved polishing defectivity performance; and, wherein at least some of the silicon oxide is removed from the substrate.

Abstract: A plasma processing method performed in a plasma processing apparatus including a processing chamber accommodating a substrate in which a plasma is generated; a mounting table mounting the substrate, which is provided in the processing chamber and to which a plasma attraction high frequency voltage is applied; and a facing electrode provided to face the mounting table in the processing chamber, to which a negative DC voltage is applied, the method including: applying a plasma attraction high frequency voltage to the mounting table for a predetermined period of time; and stopping the application of the plasma attraction high frequency voltage to the mounting table. In the plasma processing method, the application of the plasma attraction high frequency voltage and stopping thereof are alternately repeated.

Abstract: An oil gas separation membrane combines a gas permeable yet oil and temperature resistant bulk polymer membrane such as poly(tetrafluoroethylene) and poly(tetrafluoroethylene-co-hexafluoropropylene); a porous metal support such as sintered metal frit disk made with stainless steel, bronze or nickel; and an highly gas permeable adhesive that bonds firmly the bulk polymer membrane and the metal frit surface together. The adhesive is either a homogenous polymer that has desirable gas permeability, or a coalescent porous polymer particulates network. A gas sensor employing the oil gas separation membrane for detecting and monitoring fault gases of oil filled electrical equipment requires no mechanical wearing or moving part such as pump and valve and the gas sensor is operated normally under various temperature and pressure conditions.

Abstract: A method and system for providing a magnetic recording transducer having a pole are disclosed. The pole has side(s), a bottom, and a top wider than the bottom. The method and system include providing at least one side gap layer that covers the side(s) and the top of the pole. At least one sacrificial layer is provided on the side gap layer(s). The sacrificial layer(s) are wet etchable and cover the side gap layer(s). The magnetic recording transducer is planarized after the sacrificial layer(s) are provided. Thus, a portion of the side gap and sacrificial layer(s) is removed. A remaining portion of the sacrificial layer(s) is thus left. The method and system also include wet etching the sacrificial layer(s) to remove the remaining portion of the sacrificial layer(s). A wrap around shield is provided after the remaining portion of the sacrificial layer(s) is removed.

Abstract: Adaptive imprint planarization provides a surface having desired shape characteristics. Generally, topography of a first surface is mapped to provide a density map. The density map is evaluated to provide a drop pattern for dispensing polymerizable material on the first surface. The polymerizable material is solidified and etched to provide a second surface having the desired shape characteristics. Additionally, adaptive imprint planarization compensates for parasitic effects of the imprinting process.

Abstract: Embodiments of the present invention provide apparatus and methods for supporting, positioning or rotating a semiconductor substrate during processing. One embodiment of the present invention provides a method for processing a substrate comprising positioning the substrate on a substrate receiving surface of a susceptor, and rotating the susceptor and the substrate by delivering flow of fluid from one or more rotating ports.

Abstract: Disclosed is a means for stabilizing quality of a semiconductor device by preventing projections from being formed in the bottom of a through hole. A method of manufacturing a semiconductor device includes a process of forming a through hole reaching a metal nitride layer through an interlayer insulating layer on a semiconductor wafer on which the wiring layer, the metal nitride layer formed on the wiring layer, and the interlayer insulating layer covering the wiring layer and the metal nitride layer are formed. The through hole forming process includes: a first etching step of etching the interlayer insulating layer by an anisotropic etching method with the semiconductor wafer set to a first temperature; and a second etching step of etching an upper surface of metal nitride layer by an anisotropic etching method with the semiconductor wafer set to a second temperature higher than the first temperature.

Abstract: A method of manufacturing a near-field optical head. A first projection shaped in a quadrangular pyramid is formed on a surface of a substrate for providing a near-field optical element of the near-field optical head. A second projection shaped in a frustum of quadrangular pyramid is formed on the surface of the substrate for providing an air bearing surface of the near-field optical head. A metal film is formed on at least one surface of the first projection and the metal film is connected with a resistance meter through a conduction wiring for detecting an electrical resistance of the metal film. The first and second projections and the metal film are polished while the resistance meter detects an electrical resistance of the metal film and until the detected electrical resistance reaches a predetermined value such that a top surface of the first projection has a specified size and becomes flush with a surface of the second projection providing the air bearing surface.

Abstract: A scanning probe where the micromachined pyramid tip is extended by the growth of an epitaxial nanowire from the top portion of the tip is disclosed. A metallic particle, such as gold, may terminate the nanowire to realize an apertureless near-field optical microscope probe.

Abstract: A method of analyzing a quartz member includes the step of supplying an etchant to the quartz member so as to etch the quartz member. The method also includes analyzing the etchant used in the supplying step. The etchant is supplied to a concave etchant receiving portion that is formed in the quartz member prior to the supplying step and has an inner wall thereof formed of the quartz member.

Abstract: A method for manufacturing multiple layers of waveguides is disclosed. Initially, a first cladding layer is deposited on a substrate, a first inner cladding layer is then deposited on the first cladding layer, and a first waveguide material is deposited on the first inner cladding layer. The first inner cladding layer and the first waveguide material are then selectively etched to form a first waveguide layer. Next, a second inner cladding layer followed by a second cladding layer are deposited on the first waveguide layer. The second inner cladding layer and the second cladding layer are removed by using a chemical-mechanical polishing process selective to the first waveguide material. A third inner cladding layer followed by a second waveguide material are deposited on the first waveguide material. The third inner cladding layer and the second waveguide material are then selectively etched to form a second waveguide layer.

Abstract: A magnetic head includes a pole layer, first and second side shields, and an encasing layer having first to third grooves that accommodate the pole layer and the first and second side shields. A manufacturing method for the magnetic head includes the step of forming the first to third grooves in a nonmagnetic layer by using an etching mask layer having first to third openings. This step includes the steps of forming the first groove by etching the nonmagnetic layer using the first opening, with the second and third openings covered with a first mask; and forming the second and third grooves by etching the nonmagnetic layer using the second and third openings, with the first opening covered with a second mask.

Abstract: In a method for fabricating a fine pattern, a target layer to be patterned is formed on a semiconductor substrate. A sacrificial pattern is formed on the target layer. The sacrificial pattern includes first sacrificial patterns arranged at a first spacing, and second and third sacrificial patterns arranged in pairs at a second spacing less than the first spacing. A spacer having a first portion and a second portion is formed. The first portion is attached to sidewalls of the first sacrificial patterns, and the second portion is attached on both facing sides of the second and third sacrificial patterns to fill a gap defined by the second spacing. The second portion has a critical dimension greater than the first portion. The sacrificial pattern is selectively removed.

Abstract: Provided is a process of producing a liquid discharge head having a substrate, a passage-forming member, and a patterned layer. The process includes providing a resin layer on a substrate; providing a resist pattern on the resin layer for patterning the resin layer; forming a patterned layer by patterning the resin layer using the resist pattern as a mask; providing a layer for forming a passage pattern having a shape of passage on the resist pattern lying on the patterned layer; forming a passage pattern by patterning the layer for forming a passage pattern; removing the resist pattern; providing a passage-forming member so as to cover the passage pattern and the patterned layer; and removing the passage pattern to give the passage.

Abstract: A method for manufacturing a magnetic write head having a wrap around magnetic trailing shield and a very narrow track width. A magnetic write pole is formed by forming a mask over a magnetic write pole material and performing a first ion milling to define the write pole. The mask includes a hard mask layer such as diamond like carbon (DLC) and further mask layers formed over the hard mask layer. In order to facilitate manufacture at very narrow track widths processes are employed to remove re-deposited material and the remaining portions of the mask structure (except the hard mask). Further processing can then be employed without the risk of a very narrow mask structure and redep bending or breaking during later manufacturing steps.