Abstract: A laser projection module includes a fixing base, a light-emitting chip and an optical element. The fixing base has a first surface and a second surface opposite each other, and the second surface is a light-emitting surface. The fixing base has a first accommodation cavity, a second accommodation cavity and a third accommodation cavity that are sequentially arranged in a direction from the first surface to the second surface and communicated to each other. The fixing base is provided with a conduction line. The light-emitting chip is disposed on the first fixing surface of the fixing base and electrically connected to one terminal of the conduction line. The optical element is disposed on the second fixing surface of the fixing base.

Abstract: A high-voltage pulse generation device configured to apply a pulsed high voltage to the space between a pair of discharge electrodes disposed in a laser chamber of a gas laser apparatus includes n transformer cores that form a transformer, where n is a natural number greater than or equal to two, n primary electric circuits of the transformer, the n primary electric circuits each having a first terminal connected to a reference potential and a second terminal connected to a charger, the n primary electric circuits each including one or more primary coils, one or more diodes connected in parallel to the one or more primary coils, and one or more pulse generators connected in parallel to the one or more primary coils, and a secondary electric circuit of the transformer, the secondary electric circuit including a secondary coil and connected to the pair of discharge electrodes.

Abstract: A laser resonator includes a gain medium that produces light from pump energy and a variable light attenuator, which receives light and emits either (i) a first light including a continuous series of micropulses, or (ii) a second light including a series of macropulses at spaced time intervals, where each macropulse includes a series of micropulses. Each micropulse has a duration of 0.1 to 10 microseconds, and a duration of each macropulse is less than the time interval between each macropulse, and the micropulses have a frequency of 5 kHz to 40 kHz.

Abstract: Laser drivers and methods are disclosed including a pulse input for receiving one or more logical pulse control signals, a delay circuit, a main pulse output, and a precharge pulse output for efficiently driving a laser with reduced time delay to desired optical output and reduced power consumption during between optical outputs.

Abstract: A laser module comprises a plurality of laser submodules with a respective plurality of lasers. Each laser submodule has a driver IC. Each driver IC controls several lasers. The driver ICs of the laser module can use the received signals of photodetectors to homogenize and readjust the real emission amplitude of the laser pulses for all lasers of the laser module and regulate the emission point in time of the respective real laser pulses to a synchronization signal. The driver IC can detect a failure of a laser by the photodetector belonging to it and output an error signal. The lasers directly coupled with the photodetectors in a compact design.

Abstract: A laser device comprises a plurality of laser diodes, each laser diode emitting a light beam having a fast axis and a slow axis and a beam direction; and one or more optical components configured to modify a divergence of the light beams in a fast axis plane and/or in a slow axis plane such that the light beams have a same focal plane in the fast axis plane and in the slow axis plane.

Abstract: Semiconductor light-emitting apparatus includes substrate, submount above substrate, and semiconductor laser above submount. Semiconductor laser and submount are bonded to each other with first bonding material. Substrate and submount are bonded to each other with second bonding material. Submount has first region and second region near substrate, first region being a region on which spacer is disposed, and second region being a region without spacer. Submount is bonded to substrate by covering at least a portion of second region with second bonding material.

Abstract: Described herein are isolated ring cavities that have refractive and heat-generating components physically separated and mechanically held by flexure mounts that are adapted to function in combination with the physically separated structure to moderate the thermal expansion effects of the heat generated by the refractive and other heat-generating elements (e.g., gain element) of the optical cavity. The flexure mounts may be configured as thinned portions of connective elements, reducing the effects of thermal expansion of the baseplate and allowing a thermal isolation from the baseplate. Multiple flexure mounts may be arranged to minimize further the effects of thermal expansion of the baseplate.

Abstract: The metallization pattern includes a pair of first metal films on the respective pair of first surfaces, and a second metal film on the pair of second surfaces to connect the pair of first metal films. The support block includes a connection conductor connecting the pair of first metal films, the connection conductor being a castellation conductor and/or a via conductor, the castellation conductor being on the pair of third surfaces of the ceramic body, the via conductor being through the ceramic body between the pair of first surfaces. The mounting substrate is mounted on one of the pair of first surfaces. One end of the first wire is bonded to a corresponding one of the pair of first metal films or the connection conductor, at a position adjacent to or overlapping with the connection conductor, on another of the pair of first surfaces.

Abstract: A light emitting apparatus includes a laminated structure including a plurality of columnar section assemblies each formed of p columnar sections. The p columnar sections each include a light emitting layer. When viewed in the lamination direction of the laminated structure, the ratio of the maximum width to the minimum width of the light emitting layer in each of q first columnar sections out of the p columnar sections is greater than the ratio of the light emitting layer in each of r second columnar sections out of the p columnar sections. The light emitting layer in each of the p columnar sections does not have a rotationally symmetrical shape. The parameter p is an integer greater than or equal to 2. The parameter q is an integer greater than or equal to 1 but smaller than p. The parameter r is an integer that satisfies r=p?q.

Abstract: An optically pumped on-chip solid-state laser includes a solid gain media substrate and a laser generating structure disposed above the solid gain media substrate. The laser generating structure includes a resonator, a pump light input structure, and a laser light output structure; and the resonator is disposed between the pump light input structure and the laser light output structure, and is propped against or is in clearance fit with the solid gain media substrate.

Abstract: A laser element comprises a substrate; and an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer, and an electrode layer successively laminated on one principal surface of the substrate, wherein the p-type semiconductor layer includes a ridge raised in a stripe shape, the ridge including a contact layer formed in a layer including a principal surface on a side opposite to the substrate, a stepped portion defined by recessing the contact layer is formed in at least part of a boundary between a lateral surface among surfaces defining outer edges of the ridge, the lateral surface extending along a lengthwise direction of the ridge, and the principal surface of the ridge, and the electrode layer covers the principal surface of the ridge and the stepped portion.

Abstract: An excimer laser system includes first and second gas cylinders connected to a laser chamber for selectively supplying the laser chamber with gases that are needed to generate and emit laser pulsations having a certain energy level from the laser chamber. At least one of the first and second gas cylinders includes a halogen gas. The halogen gas is consumed during the operation of the excimer laser system. A computer system, included within the excimer laser system, is used to determine whether to resupply the laser chamber with halogen gas from the first and/or second cylinders, or to entirely flush out the gas contents of the laser chamber, and to resupply the flushed gas chamber with gas sourced from the first and/or second cylinders.

Abstract: A multi-wavelength mid-infrared laser pulse train cavity dumped laser based on Nd:MgO:APLN crystal is disclosed. In response to the needs in the field of differential absorption lidar, it is necessary to introduce multi-fundamental frequency light pulse accumulation and superposition, and parametric light synchronization pulse compression technology in the multi-wavelength mid-infrared laser operating mechanism. To this end, a splayed parametric light oscillation cavity formed in conjunction with a Nd:MgO:APLN crystal is disclosed, wherein it is possible to obtain multi-wavelength mid-infrared laser pulse train output with narrow pulse width and high peak power, meeting the needs of differential absorption lidar for mid-infrared lasers.

Abstract: A sintered body of the present invention includes cerium oxide and cerium fluoride or yttrium fluoride.

Abstract: The invention relates to an edge emitting laser diode comprising a semiconductor layer stack whose growth direction defines a vertical direction, and wherein the semiconductor layer stack comprises an active layer and a waveguide layer. A thermal stress element is arranged in at least indirect contact with the semiconductor layer stack, the thermal stress element being configured to generate a thermally induced mechanical stress in the waveguide layer that counteracts the formation of a thermal lens.

Abstract: A wavelength tunable laser includes a filter region having a wavelength selection function on light from a gain region, wherein the filter region is a Sagnac interferometer and includes two ring resonators. The ring resonator has two optical couplers, and first and second curved waveguides connecting the two optical couplers, each of the two optical couplers is configured to receive input of the light from the gain region through an input-output port, to couple light of a resonant peak to a bar port of the input-output port, and to couple light except light at a resonant peak wavelength to a cross port of the input-output port, and each of radiation waveguides connected to the cross ports of the input-output ports of the two optical couplers has a structure that radiates the light except the light at the resonant peak wavelength to a front surface or a back surface of a substrate.

Abstract: A wavelength tunable laser includes a filter region having a wavelength selection function on light from a gain region, wherein the filter region is a Sagnac interferometer and includes two ring resonators. The ring resonator has two optical couplers, and first and second curved waveguides connecting the two optical couplers, each of the two optical couplers is configured to receive input of the light from the gain region through an input-output port, to couple light of a resonant peak to a bar port of the input-output port, and to couple light except light at a resonant peak wavelength to a cross port of the input-output port, and the first curved waveguide connects the bar ports of the input-output ports of the two optical couplers, and the second curved waveguide connects the cross ports of ports, of two optical couplers, that the first curved waveguide is connected to.

Abstract: A semiconductor laser device includes a semiconductor laser chip that emits laser light, a plate-like base, and a block protruding from the base and supporting the semiconductor laser chip. The block has a supporting surface and a wire bonding surface. The supporting surface faces a first side in a first direction perpendicular to the laser light emitting direction, and supports the semiconductor laser chip. The wire bonding surface is a surface to which a wire connected to the semiconductor laser chip is connected. The wire bonding surface is shifted in a second direction perpendicular to the emitting direction and the first direction with respect to the supporting surface. The wire bonding surface is inclined relative to the supporting surface, such that the wire bonding surface is more offset to a second side in the first direction with increasing distance from the supporting surface in the second direction.

Abstract: A vertical cavity surface emitting laser includes an active area, an inner trench, an outer trench, and a first implantation region. The active area includes a first mirror, an active region, a second mirror, and an etch stop layer. The first mirror is formed over a substrate. The active region is formed over the first mirror. The second mirror is formed over the active region. The etch stop layer with an aperture is formed between the active region and the second mirror. The inner trench surrounds the active area in a top view. The outer trench is formed beside the inner trench. The first implantation region is formed below the inner trench.