Abstract: A laser element comprises a substrate; and an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer, and an electrode layer successively laminated on one principal surface of the substrate, wherein the p-type semiconductor layer includes a ridge raised in a stripe shape, the ridge including a contact layer formed in a layer including a principal surface on a side opposite to the substrate, a stepped portion defined by recessing the contact layer is formed in at least part of a boundary between a lateral surface among surfaces defining outer edges of the ridge, the lateral surface extending along a lengthwise direction of the ridge, and the principal surface of the ridge, and the electrode layer covers the principal surface of the ridge and the stepped portion.

Abstract: An excimer laser system includes first and second gas cylinders connected to a laser chamber for selectively supplying the laser chamber with gases that are needed to generate and emit laser pulsations having a certain energy level from the laser chamber. At least one of the first and second gas cylinders includes a halogen gas. The halogen gas is consumed during the operation of the excimer laser system. A computer system, included within the excimer laser system, is used to determine whether to resupply the laser chamber with halogen gas from the first and/or second cylinders, or to entirely flush out the gas contents of the laser chamber, and to resupply the flushed gas chamber with gas sourced from the first and/or second cylinders.

Abstract: A multi-wavelength mid-infrared laser pulse train cavity dumped laser based on Nd:MgO:APLN crystal is disclosed. In response to the needs in the field of differential absorption lidar, it is necessary to introduce multi-fundamental frequency light pulse accumulation and superposition, and parametric light synchronization pulse compression technology in the multi-wavelength mid-infrared laser operating mechanism. To this end, a splayed parametric light oscillation cavity formed in conjunction with a Nd:MgO:APLN crystal is disclosed, wherein it is possible to obtain multi-wavelength mid-infrared laser pulse train output with narrow pulse width and high peak power, meeting the needs of differential absorption lidar for mid-infrared lasers.

Abstract: The invention relates to an edge emitting laser diode comprising a semiconductor layer stack whose growth direction defines a vertical direction, and wherein the semiconductor layer stack comprises an active layer and a waveguide layer. A thermal stress element is arranged in at least indirect contact with the semiconductor layer stack, the thermal stress element being configured to generate a thermally induced mechanical stress in the waveguide layer that counteracts the formation of a thermal lens.

Abstract: A wavelength tunable laser includes a filter region having a wavelength selection function on light from a gain region, wherein the filter region is a Sagnac interferometer and includes two ring resonators. The ring resonator has two optical couplers, and first and second curved waveguides connecting the two optical couplers, each of the two optical couplers is configured to receive input of the light from the gain region through an input-output port, to couple light of a resonant peak to a bar port of the input-output port, and to couple light except light at a resonant peak wavelength to a cross port of the input-output port, and each of radiation waveguides connected to the cross ports of the input-output ports of the two optical couplers has a structure that radiates the light except the light at the resonant peak wavelength to a front surface or a back surface of a substrate.

Abstract: A sintered body of the present invention includes cerium oxide and cerium fluoride or yttrium fluoride.

Abstract: A wavelength tunable laser includes a filter region having a wavelength selection function on light from a gain region, wherein the filter region is a Sagnac interferometer and includes two ring resonators. The ring resonator has two optical couplers, and first and second curved waveguides connecting the two optical couplers, each of the two optical couplers is configured to receive input of the light from the gain region through an input-output port, to couple light of a resonant peak to a bar port of the input-output port, and to couple light except light at a resonant peak wavelength to a cross port of the input-output port, and the first curved waveguide connects the bar ports of the input-output ports of the two optical couplers, and the second curved waveguide connects the cross ports of ports, of two optical couplers, that the first curved waveguide is connected to.

Abstract: A semiconductor laser device includes a semiconductor laser chip that emits laser light, a plate-like base, and a block protruding from the base and supporting the semiconductor laser chip. The block has a supporting surface and a wire bonding surface. The supporting surface faces a first side in a first direction perpendicular to the laser light emitting direction, and supports the semiconductor laser chip. The wire bonding surface is a surface to which a wire connected to the semiconductor laser chip is connected. The wire bonding surface is shifted in a second direction perpendicular to the emitting direction and the first direction with respect to the supporting surface. The wire bonding surface is inclined relative to the supporting surface, such that the wire bonding surface is more offset to a second side in the first direction with increasing distance from the supporting surface in the second direction.

Abstract: A vertical cavity surface emitting laser includes an active area, an inner trench, an outer trench, and a first implantation region. The active area includes a first mirror, an active region, a second mirror, and an etch stop layer. The first mirror is formed over a substrate. The active region is formed over the first mirror. The second mirror is formed over the active region. The etch stop layer with an aperture is formed between the active region and the second mirror. The inner trench surrounds the active area in a top view. The outer trench is formed beside the inner trench. The first implantation region is formed below the inner trench.

Abstract: An optical module unit includes: optical modules each including light emitting elements; and a mount on which the light emitting elements are disposed on one side of the mount, and includes a sub-passage; and a manifold to which the optical modules are fixed. The manifold includes a first main passage to which a first end of each of the sub-passages is connected in parallel.

Abstract: A diode-pumped solid state laser system and a method of diode-pumping a solid state laser in which the emitter beamlets in the diode bar are directed at a beam transformation optical element which includes a continuous twisted surface to produce a uniform and symmetrised beam in the fast field which is then focused to match an input pump area of the gain medium of the solid state laser. Embodiments to square and rectangular flat-top intensity distributions are described using a Fourier lens and a set of cylindrical orthogonal lenses.

Abstract: In one embodiment, the semiconductor laser comprises a housing in which multiple laser diode chips are encapsulated. The housing comprises a cover panel and/or a lateral wall which is permeable to the generated laser radiation. The cover panel and/or the lateral wall has a light outlet surface with adjacent outlet regions. Each of the outlet regions is paired with precisely one of the laser diode chips. The light outlet surface is arranged downstream of a light outlet plane. The cover panel and/or the lateral wall has a different average thickness in the outlet regions such that the optical wavelength for the laser radiation of all of the laser diode chips is the same up to the light outlet plane with a tolerance of maximally 1.5 ?m.

Abstract: A method of manufacturing a laser light source includes: providing a submount, the submount having a principal surface on which a laser diode chip is to be fixed, and comprising a pair of lens supports each including an end surface, the end surfaces located at opposite sides with respect to an emission end surface of the laser diode chip; providing a lens having a bonding surface; performing adjustment such that end surfaces of the pair of lens supports of the submount are parallel to a reference plane; performing adjustment such that the bonding surface of the lens is parallel to the reference plane; and while maintaining the end surfaces of the pair of lens supports and the bonding surface of the lens so as to be parallel to the reference plane, bonding the end surfaces with the bonding surface of the lens using an inorganic bonding member.

Abstract: Described herein are methods for developing and maintaining pulses that are produced from compact resonant cavities using one or more Q-switches and maintaining the output parameters of these pulses created during repetitive pulsed operation. The deterministic control of the evolution of a Q-switched laser pulse is complicated due to dynamic laser cavity feedback effects and unpredictable environmental inputs. Laser pulse shape control in a compact laser cavity (e.g., length/speed of light <˜1 ns) is especially difficult because closed loop control becomes impossible due to causality. Because various issues cause laser output of these compact resonator cavities to drift over time, described herein are further methods for automatically maintaining those output parameters.

Abstract: The present invention provides a multichannel parallel light emitting device comprising a semiconductor cooler, a cold surface of the semiconductor cooler completely covers the area of a hot surface, and when the hot surface and the cold surface are horizontally disposed, a horizontal distance is reserved between the edge of the cold surface and the edge of the hot surface, and a positive electrode and a negative electrode are fixed on a second surface of the cold surface.

Abstract: A method includes applying, by a switching circuit, pulses of an input voltage to an input of an inductor. The method includes charging, in accordance with an off state of a switch, a charge storage device through the inductor using the pulses of the input voltage such that the circuit node develops a charge voltage that is greater than the input voltage. The method includes discharging, in accordance with an on state of the switch, the charge storage device such that a first portion of the charge voltage is applied to a light emitter and a second portion of the charge voltage is applied to parasitic inductance. The method includes controlling, by a controller, a timing of the pulses of the input voltage applied by the switching circuit based on a parasitic inductance from a previous charging cycle of the charge storage device, so as to control the charge voltage.

Abstract: Apparatus include a first laser diode situated to emit a beam from an exit facet along an optical axis, the beam as emitted having perpendicular fast and slow axes perpendicular to the optical axis, a first fast axis collimator (FAC) optically coupled to the beam as emitted from the exit facet and configured to direct the beam along a redirected beam axis having a non-zero angle with respect to the optical axis of the first laser diode, a second laser diode situated to emit a beam from an exit facet of the second laser diode along an optical axis parallel to the optical axis of the first laser diode and with a slow axis in a common plane with the slow axis of the first laser diode, and a second fast axis collimator (FAC) optically coupled to the beam as emitted from the exit facet of the second laser diode and configured to direct the beam along a redirected beam axis having a non-zero angle with respect to the optical axis of the second laser diode.

Abstract: In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several parallel ridge waveguides (3) are formed from the semiconductor layer sequence (2) and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench (6) between adjacent ridge waveguides. At least one electrical feed (4) serves from at least one of the electrical contact surfaces (5) to guide the current to at least one of the ridge waveguides (3). A distance (A4) between the ridge waveguides is at most 50 ?m. The ridge waveguides (3) are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.

Abstract: According to embodiments of the present invention, an optical device is provided. The optical device includes a substrate, a semiconductor layer on the substrate, the semiconductor layer having a beam structure that is subjected to a tensile strain, wherein the beam structure includes a plurality of nanostructures, and wherein, for each nanostructure of the plurality of nanostructures, the nanostructure is configured to locally amplify the tensile strain at the nanostructure to define a strain-induced artificial quantum heterostructure for quantum confinement. According to a further embodiment of the present invention, a method of forming an optical device is also provided.

Abstract: A semiconductor light emitting element includes an optical waveguide having a first and second waveguide provided with a width that allows propagation of light in a second-order mode or higher and a multimode optical interference waveguide provided with a wider width than the first and second waveguide and arranged at a position therebetween. The semiconductor light emitting element further includes a first optical loss layer facing the first waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the first waveguide in the second-order mode or higher and a second optical loss layer facing the second waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the second waveguide in the second-order mode or higher, the active-layer crossing direction being orthogonal to a surface of an active layer.