Patents Examined by Delma R Forde
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Patent number: 12119608Abstract: A wavelength tunable laser includes a filter region having a wavelength selection function on light from a gain region, wherein the filter region is a Sagnac interferometer and includes two ring resonators. The ring resonator has two optical couplers, and first and second curved waveguides connecting the two optical couplers, each of the two optical couplers is configured to receive input of the light from the gain region through an input-output port, to couple light of a resonant peak to a bar port of the input-output port, and to couple light except light at a resonant peak wavelength to a cross port of the input-output port, and each of radiation waveguides connected to the cross ports of the input-output ports of the two optical couplers has a structure that radiates the light except the light at the resonant peak wavelength to a front surface or a back surface of a substrate.Type: GrantFiled: December 26, 2019Date of Patent: October 15, 2024Assignee: Nippon Telegraph and Telephone CorporationInventors: Yusuke Muranaka, Shinji Matsuo, Nobuhiro Nunoya, Toshikazu Hashimoto
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Patent number: 12119620Abstract: The invention relates to an edge emitting laser diode comprising a semiconductor layer stack whose growth direction defines a vertical direction, and wherein the semiconductor layer stack comprises an active layer and a waveguide layer. A thermal stress element is arranged in at least indirect contact with the semiconductor layer stack, the thermal stress element being configured to generate a thermally induced mechanical stress in the waveguide layer that counteracts the formation of a thermal lens.Type: GrantFiled: January 16, 2020Date of Patent: October 15, 2024Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventor: Jens Ebbecke
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Patent number: 12119607Abstract: A wavelength tunable laser includes a filter region having a wavelength selection function on light from a gain region, wherein the filter region is a Sagnac interferometer and includes two ring resonators. The ring resonator has two optical couplers, and first and second curved waveguides connecting the two optical couplers, each of the two optical couplers is configured to receive input of the light from the gain region through an input-output port, to couple light of a resonant peak to a bar port of the input-output port, and to couple light except light at a resonant peak wavelength to a cross port of the input-output port, and the first curved waveguide connects the bar ports of the input-output ports of the two optical couplers, and the second curved waveguide connects the cross ports of ports, of two optical couplers, that the first curved waveguide is connected to.Type: GrantFiled: December 26, 2019Date of Patent: October 15, 2024Assignee: Nippon Telegraph and Telephone CorporationInventors: Yusuke Muranaka, Shinji Matsuo, Nobuhiro Nunoya, Toshikazu Hashimoto
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Patent number: 12119613Abstract: A sintered body of the present invention includes cerium oxide and cerium fluoride or yttrium fluoride.Type: GrantFiled: August 5, 2020Date of Patent: October 15, 2024Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Atsushi Sugiyama, Akio Ito, Tadataka Edamura
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Patent number: 12113330Abstract: A semiconductor laser device includes a semiconductor laser chip that emits laser light, a plate-like base, and a block protruding from the base and supporting the semiconductor laser chip. The block has a supporting surface and a wire bonding surface. The supporting surface faces a first side in a first direction perpendicular to the laser light emitting direction, and supports the semiconductor laser chip. The wire bonding surface is a surface to which a wire connected to the semiconductor laser chip is connected. The wire bonding surface is shifted in a second direction perpendicular to the emitting direction and the first direction with respect to the supporting surface. The wire bonding surface is inclined relative to the supporting surface, such that the wire bonding surface is more offset to a second side in the first direction with increasing distance from the supporting surface in the second direction.Type: GrantFiled: September 19, 2019Date of Patent: October 8, 2024Assignee: ROHM CO., LTD.Inventors: Kenji Sakai, Kazuyoshi Izumi
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Patent number: 12095231Abstract: A vertical cavity surface emitting laser includes an active area, an inner trench, an outer trench, and a first implantation region. The active area includes a first mirror, an active region, a second mirror, and an etch stop layer. The first mirror is formed over a substrate. The active region is formed over the first mirror. The second mirror is formed over the active region. The etch stop layer with an aperture is formed between the active region and the second mirror. The inner trench surrounds the active area in a top view. The outer trench is formed beside the inner trench. The first implantation region is formed below the inner trench.Type: GrantFiled: March 25, 2021Date of Patent: September 17, 2024Assignee: WIN SEMICONDUCTORS CORP.Inventors: Min-Chang Tu, Jiun-Tsuen Lai, Wan-Ting Chien
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Patent number: 12095221Abstract: A diode-pumped solid state laser system and a method of diode-pumping a solid state laser in which the emitter beamlets in the diode bar are directed at a beam transformation optical element which includes a continuous twisted surface to produce a uniform and symmetrised beam in the fast field which is then focused to match an input pump area of the gain medium of the solid state laser. Embodiments to square and rectangular flat-top intensity distributions are described using a Fourier lens and a set of cylindrical orthogonal lenses.Type: GrantFiled: December 6, 2021Date of Patent: September 17, 2024Assignee: POWERPHOTONIC LTD.Inventors: Paul Duncan Graham, Roy McBride, Natalia Trela-McDonald
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Patent number: 12095220Abstract: An optical module unit includes: optical modules each including light emitting elements; and a mount on which the light emitting elements are disposed on one side of the mount, and includes a sub-passage; and a manifold to which the optical modules are fixed. The manifold includes a first main passage to which a first end of each of the sub-passages is connected in parallel.Type: GrantFiled: June 12, 2019Date of Patent: September 17, 2024Assignee: Fujikura Ltd.Inventor: Yukihiko Takahashi
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Patent number: 12040588Abstract: In one embodiment, the semiconductor laser comprises a housing in which multiple laser diode chips are encapsulated. The housing comprises a cover panel and/or a lateral wall which is permeable to the generated laser radiation. The cover panel and/or the lateral wall has a light outlet surface with adjacent outlet regions. Each of the outlet regions is paired with precisely one of the laser diode chips. The light outlet surface is arranged downstream of a light outlet plane. The cover panel and/or the lateral wall has a different average thickness in the outlet regions such that the optical wavelength for the laser radiation of all of the laser diode chips is the same up to the light outlet plane with a tolerance of maximally 1.5 ?m.Type: GrantFiled: November 11, 2019Date of Patent: July 16, 2024Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventor: Peter Jander
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Patent number: 12027816Abstract: A method of manufacturing a laser light source includes: providing a submount, the submount having a principal surface on which a laser diode chip is to be fixed, and comprising a pair of lens supports each including an end surface, the end surfaces located at opposite sides with respect to an emission end surface of the laser diode chip; providing a lens having a bonding surface; performing adjustment such that end surfaces of the pair of lens supports of the submount are parallel to a reference plane; performing adjustment such that the bonding surface of the lens is parallel to the reference plane; and while maintaining the end surfaces of the pair of lens supports and the bonding surface of the lens so as to be parallel to the reference plane, bonding the end surfaces with the bonding surface of the lens using an inorganic bonding member.Type: GrantFiled: April 26, 2021Date of Patent: July 2, 2024Assignee: NICHIA CORPORATIONInventors: Norihiro Dejima, Hidenori Matsuo, Masaki Omori, Hideaki Takeda
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Patent number: 12009631Abstract: Described herein are methods for developing and maintaining pulses that are produced from compact resonant cavities using one or more Q-switches and maintaining the output parameters of these pulses created during repetitive pulsed operation. The deterministic control of the evolution of a Q-switched laser pulse is complicated due to dynamic laser cavity feedback effects and unpredictable environmental inputs. Laser pulse shape control in a compact laser cavity (e.g., length/speed of light <˜1 ns) is especially difficult because closed loop control becomes impossible due to causality. Because various issues cause laser output of these compact resonator cavities to drift over time, described herein are further methods for automatically maintaining those output parameters.Type: GrantFiled: September 30, 2022Date of Patent: June 11, 2024Assignee: Arete AssociatesInventor: Micah Boyd
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Patent number: 12003074Abstract: The present invention provides a multichannel parallel light emitting device comprising a semiconductor cooler, a cold surface of the semiconductor cooler completely covers the area of a hot surface, and when the hot surface and the cold surface are horizontally disposed, a horizontal distance is reserved between the edge of the cold surface and the edge of the hot surface, and a positive electrode and a negative electrode are fixed on a second surface of the cold surface.Type: GrantFiled: December 16, 2020Date of Patent: June 4, 2024Assignee: Linktel Technologies Co., Ltd.Inventors: Baiquan Hu, Linke Li, Xuefeng Lin, Dingkun Hu, Tianshu Wu, Xianwen Yang, Jian Zhang
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Patent number: 11996677Abstract: A method includes applying, by a switching circuit, pulses of an input voltage to an input of an inductor. The method includes charging, in accordance with an off state of a switch, a charge storage device through the inductor using the pulses of the input voltage such that the circuit node develops a charge voltage that is greater than the input voltage. The method includes discharging, in accordance with an on state of the switch, the charge storage device such that a first portion of the charge voltage is applied to a light emitter and a second portion of the charge voltage is applied to parasitic inductance. The method includes controlling, by a controller, a timing of the pulses of the input voltage applied by the switching circuit based on a parasitic inductance from a previous charging cycle of the charge storage device, so as to control the charge voltage.Type: GrantFiled: December 29, 2020Date of Patent: May 28, 2024Assignee: Waymo LLCInventors: Joshua Jones, Augusto Tazzoli, Pierre-yves Droz
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Patent number: 11979002Abstract: Apparatus include a first laser diode situated to emit a beam from an exit facet along an optical axis, the beam as emitted having perpendicular fast and slow axes perpendicular to the optical axis, a first fast axis collimator (FAC) optically coupled to the beam as emitted from the exit facet and configured to direct the beam along a redirected beam axis having a non-zero angle with respect to the optical axis of the first laser diode, a second laser diode situated to emit a beam from an exit facet of the second laser diode along an optical axis parallel to the optical axis of the first laser diode and with a slow axis in a common plane with the slow axis of the first laser diode, and a second fast axis collimator (FAC) optically coupled to the beam as emitted from the exit facet of the second laser diode and configured to direct the beam along a redirected beam axis having a non-zero angle with respect to the optical axis of the second laser diode.Type: GrantFiled: November 9, 2020Date of Patent: May 7, 2024Assignee: nLIGHT, Inc.Inventors: Zhigang Chen, Manoj Kanskar, Shuang Li, Jim Zhang, Mark DeFranza, David Martin Hemenway, Eric Martin, Jay Small
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Patent number: 11973317Abstract: In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several parallel ridge waveguides (3) are formed from the semiconductor layer sequence (2) and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench (6) between adjacent ridge waveguides. At least one electrical feed (4) serves from at least one of the electrical contact surfaces (5) to guide the current to at least one of the ridge waveguides (3). A distance (A4) between the ridge waveguides is at most 50 ?m. The ridge waveguides (3) are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.Type: GrantFiled: March 13, 2019Date of Patent: April 30, 2024Assignee: OSRAM OLED GMBHInventors: Jan Marfeld, André Somers, Andreas Löffler, Sven Gerhard
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Patent number: 11962128Abstract: According to embodiments of the present invention, an optical device is provided. The optical device includes a substrate, a semiconductor layer on the substrate, the semiconductor layer having a beam structure that is subjected to a tensile strain, wherein the beam structure includes a plurality of nanostructures, and wherein, for each nanostructure of the plurality of nanostructures, the nanostructure is configured to locally amplify the tensile strain at the nanostructure to define a strain-induced artificial quantum heterostructure for quantum confinement. According to a further embodiment of the present invention, a method of forming an optical device is also provided.Type: GrantFiled: March 7, 2022Date of Patent: April 16, 2024Assignee: Nanyang Technological UniversityInventors: Donguk Nam, Youngmin Kim, Yongduck Jung, Daniel Burt, Hyo Jun Joo, Weijun Fan
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Patent number: 11955772Abstract: A semiconductor light emitting element includes an optical waveguide having a first and second waveguide provided with a width that allows propagation of light in a second-order mode or higher and a multimode optical interference waveguide provided with a wider width than the first and second waveguide and arranged at a position therebetween. The semiconductor light emitting element further includes a first optical loss layer facing the first waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the first waveguide in the second-order mode or higher and a second optical loss layer facing the second waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the second waveguide in the second-order mode or higher, the active-layer crossing direction being orthogonal to a surface of an active layer.Type: GrantFiled: March 24, 2021Date of Patent: April 9, 2024Assignees: DENSO CORPORATION, KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATIONInventors: Yuki Kamata, Koichi Oyama, Hiroyuki Tarumi, Kiichi Hamamoto, Haisong Jiang
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Patent number: 11916356Abstract: An emitter array, may comprise a first set of emitters that has a nominal optical output power at an operating voltage. The emitter array may comprise a second set of emitters that has substantially less than the nominal optical output power or no optical output power at the operating voltage. The first set of emitters and the second set of emitters may be interleaved with each other to form a two-dimensional regular pattern of emitters that emits a random pattern of light at the nominal optical output power at the operating voltage. The first set of emitters and the second set of emitters may be electrically connected in parallel.Type: GrantFiled: May 6, 2022Date of Patent: February 27, 2024Assignee: Lumentum Operations LLCInventors: Vincent V. Wong, Jay A. Skidmore, Matthew Glenn Peters
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Patent number: 11909167Abstract: Multi-Channels coherent beam combining (CBC) using a mechanism for phase and/or polarization locking that uses a reference optical beam and an array of optical detectors each detector being configured and located to detect overall intensity of an optical interference signal caused by interfering of the reference beam and a beam of the respective channel, where the fast intensity per-channel detection allows simultaneous and quick phase/polarization locking of all channels for improving beam combining system performances.Type: GrantFiled: May 11, 2023Date of Patent: February 20, 2024Assignee: ELBIT SYSTEMS ELECTRO-OPTICS—ELOP LTD.Inventors: Zeev Schiffer, Andrey Nazarov, Daniel Levy
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Patent number: 11901703Abstract: A QCL may include a substrate, and a semiconductor layer adjacent the substrate. The semiconductor layer may define branch active regions, and a stem region coupled to output ends of the branch active regions. Each branch active region may have a number of stages less than 30.Type: GrantFiled: June 28, 2021Date of Patent: February 13, 2024Assignee: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.Inventor: Arkadiy Lyakh