Abstract: A diode-pumped solid state laser system and a method of diode-pumping a solid state laser in which the emitter beamlets in the diode bar are directed at a beam transformation optical element which includes a continuous twisted surface to produce a uniform and symmetrised beam in the fast field which is then focused to match an input pump area of the gain medium of the solid state laser. Embodiments to square and rectangular flat-top intensity distributions are described using a Fourier lens and a set of cylindrical orthogonal lenses.

Abstract: An optical module unit includes: optical modules each including light emitting elements; and a mount on which the light emitting elements are disposed on one side of the mount, and includes a sub-passage; and a manifold to which the optical modules are fixed. The manifold includes a first main passage to which a first end of each of the sub-passages is connected in parallel.

Abstract: A vertical cavity surface emitting laser includes an active area, an inner trench, an outer trench, and a first implantation region. The active area includes a first mirror, an active region, a second mirror, and an etch stop layer. The first mirror is formed over a substrate. The active region is formed over the first mirror. The second mirror is formed over the active region. The etch stop layer with an aperture is formed between the active region and the second mirror. The inner trench surrounds the active area in a top view. The outer trench is formed beside the inner trench. The first implantation region is formed below the inner trench.

Abstract: In one embodiment, the semiconductor laser comprises a housing in which multiple laser diode chips are encapsulated. The housing comprises a cover panel and/or a lateral wall which is permeable to the generated laser radiation. The cover panel and/or the lateral wall has a light outlet surface with adjacent outlet regions. Each of the outlet regions is paired with precisely one of the laser diode chips. The light outlet surface is arranged downstream of a light outlet plane. The cover panel and/or the lateral wall has a different average thickness in the outlet regions such that the optical wavelength for the laser radiation of all of the laser diode chips is the same up to the light outlet plane with a tolerance of maximally 1.5 ?m.

Abstract: A method of manufacturing a laser light source includes: providing a submount, the submount having a principal surface on which a laser diode chip is to be fixed, and comprising a pair of lens supports each including an end surface, the end surfaces located at opposite sides with respect to an emission end surface of the laser diode chip; providing a lens having a bonding surface; performing adjustment such that end surfaces of the pair of lens supports of the submount are parallel to a reference plane; performing adjustment such that the bonding surface of the lens is parallel to the reference plane; and while maintaining the end surfaces of the pair of lens supports and the bonding surface of the lens so as to be parallel to the reference plane, bonding the end surfaces with the bonding surface of the lens using an inorganic bonding member.

Abstract: Described herein are methods for developing and maintaining pulses that are produced from compact resonant cavities using one or more Q-switches and maintaining the output parameters of these pulses created during repetitive pulsed operation. The deterministic control of the evolution of a Q-switched laser pulse is complicated due to dynamic laser cavity feedback effects and unpredictable environmental inputs. Laser pulse shape control in a compact laser cavity (e.g., length/speed of light <˜1 ns) is especially difficult because closed loop control becomes impossible due to causality. Because various issues cause laser output of these compact resonator cavities to drift over time, described herein are further methods for automatically maintaining those output parameters.

Abstract: The present invention provides a multichannel parallel light emitting device comprising a semiconductor cooler, a cold surface of the semiconductor cooler completely covers the area of a hot surface, and when the hot surface and the cold surface are horizontally disposed, a horizontal distance is reserved between the edge of the cold surface and the edge of the hot surface, and a positive electrode and a negative electrode are fixed on a second surface of the cold surface.

Abstract: A method includes applying, by a switching circuit, pulses of an input voltage to an input of an inductor. The method includes charging, in accordance with an off state of a switch, a charge storage device through the inductor using the pulses of the input voltage such that the circuit node develops a charge voltage that is greater than the input voltage. The method includes discharging, in accordance with an on state of the switch, the charge storage device such that a first portion of the charge voltage is applied to a light emitter and a second portion of the charge voltage is applied to parasitic inductance. The method includes controlling, by a controller, a timing of the pulses of the input voltage applied by the switching circuit based on a parasitic inductance from a previous charging cycle of the charge storage device, so as to control the charge voltage.

Abstract: Apparatus include a first laser diode situated to emit a beam from an exit facet along an optical axis, the beam as emitted having perpendicular fast and slow axes perpendicular to the optical axis, a first fast axis collimator (FAC) optically coupled to the beam as emitted from the exit facet and configured to direct the beam along a redirected beam axis having a non-zero angle with respect to the optical axis of the first laser diode, a second laser diode situated to emit a beam from an exit facet of the second laser diode along an optical axis parallel to the optical axis of the first laser diode and with a slow axis in a common plane with the slow axis of the first laser diode, and a second fast axis collimator (FAC) optically coupled to the beam as emitted from the exit facet of the second laser diode and configured to direct the beam along a redirected beam axis having a non-zero angle with respect to the optical axis of the second laser diode.

Abstract: In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several parallel ridge waveguides (3) are formed from the semiconductor layer sequence (2) and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench (6) between adjacent ridge waveguides. At least one electrical feed (4) serves from at least one of the electrical contact surfaces (5) to guide the current to at least one of the ridge waveguides (3). A distance (A4) between the ridge waveguides is at most 50 ?m. The ridge waveguides (3) are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.

Abstract: According to embodiments of the present invention, an optical device is provided. The optical device includes a substrate, a semiconductor layer on the substrate, the semiconductor layer having a beam structure that is subjected to a tensile strain, wherein the beam structure includes a plurality of nanostructures, and wherein, for each nanostructure of the plurality of nanostructures, the nanostructure is configured to locally amplify the tensile strain at the nanostructure to define a strain-induced artificial quantum heterostructure for quantum confinement. According to a further embodiment of the present invention, a method of forming an optical device is also provided.

Abstract: A semiconductor light emitting element includes an optical waveguide having a first and second waveguide provided with a width that allows propagation of light in a second-order mode or higher and a multimode optical interference waveguide provided with a wider width than the first and second waveguide and arranged at a position therebetween. The semiconductor light emitting element further includes a first optical loss layer facing the first waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the first waveguide in the second-order mode or higher and a second optical loss layer facing the second waveguide in an active-layer crossing direction for causing a loss of light that is propagating in the second waveguide in the second-order mode or higher, the active-layer crossing direction being orthogonal to a surface of an active layer.

Abstract: An emitter array, may comprise a first set of emitters that has a nominal optical output power at an operating voltage. The emitter array may comprise a second set of emitters that has substantially less than the nominal optical output power or no optical output power at the operating voltage. The first set of emitters and the second set of emitters may be interleaved with each other to form a two-dimensional regular pattern of emitters that emits a random pattern of light at the nominal optical output power at the operating voltage. The first set of emitters and the second set of emitters may be electrically connected in parallel.

Abstract: Multi-Channels coherent beam combining (CBC) using a mechanism for phase and/or polarization locking that uses a reference optical beam and an array of optical detectors each detector being configured and located to detect overall intensity of an optical interference signal caused by interfering of the reference beam and a beam of the respective channel, where the fast intensity per-channel detection allows simultaneous and quick phase/polarization locking of all channels for improving beam combining system performances.

Abstract: The present invention relates to a driving device, a driving method, and a light-emitting unit that make it possible to appropriately drive a light-emitting element. The driving device according to the present invention includes: a setting section (161) that sets at least one of a bias current of a light-emitting element (an LD 121) or a target current for setting output light from the light-emitting element (the LD 121) to desired intensity on the basis of a result of detection of an offset light amount when the light-emitting element (the LD 121) does not emit light; and an output controller (164) that controls an output of a driving current of the light-emitting element (the LD 121) on the basis of at least one of the set bias current or the set target current. The detection of the offset light amount is performed by a light-receiving element (a PD 122) that receives a portion of the output light. The present invention is applicable to a ranging module, for example.

Abstract: A QCL may include a substrate, and a semiconductor layer adjacent the substrate. The semiconductor layer may define branch active regions, and a stem region coupled to output ends of the branch active regions. Each branch active region may have a number of stages less than 30.

Abstract: A QCL may include a substrate, and a semiconductor layer adjacent the substrate. The semiconductor layer may define branch active regions, and a stem region coupled to output ends of the branch active regions. Each branch active region may have a number of stages less than 30.

Abstract: The present disclosure relates to an approach for monitoring the output power of a VCSEL or VCSEL array in a relatively compact, low profile package. A VCSEL device or VCSEL package of the present disclosure may generally be configured with a photodiode for monitoring output power of one or more VCSELs. In some embodiments, one or more VCSEL devices may be arranged over or on a photodetector, such that the photodetector is configured to detect light emitted through a bottom of the VCSEL. In such embodiments, the VCSEL device may have a patterned bottom metal layer and/or an etched substrate to allow light to pass below or behind the VCSEL to the photodiode. In other embodiments, a photodetector may be arranged on a submount adjacent one or more VCSELs, and may be configured to detect light reflected via a diffuser in order to monitor output power.

Abstract: There is provided a multimode optical amplifier that provides gain to a plurality of propagation modes of signal light. The multimode optical amplifier includes a multiplexer that multiplexes the signal light and excitation light; an amplifying fiber which has a core that propagates a predetermined plurality of propagation modes of the signal light and a predetermined plurality of propagation modes of the excitation light, and which provides an individual gain value for each of the predetermined propagation modes of the signal light; a wavelength-flattening filter that maintains a constant gain value for a frequency for all predetermined propagation modes of the signal light; and a mode-flattening filter that maintains the gain value at a constant value for a predetermined propagation mode of the signal light for all predetermined propagation modes of the signal light.

Abstract: A laser chip for flip-chip bonding on a silicon photonics chip with passive alignment features. The laser chip includes a chip body made of a p-region and a n-region in vertical direction and extended from a front facet to a rear facet in longitudinal direction, a pair of first vertical stoppers formed respectively beyond two sides of the chip body based on a wider width of the n-region, an active region buried in the chip body between the p-region and the n-region in the vertical direction and extended from the front facet to the rear facet in the longitudinal direction, an alignment mark formed on a top surface of the p-region near the front facet with a lateral distance defined in sub-micron precision relative to the active region; and a thin metal film on the surface of the p-region having a cleaved edge shared with the front facet.