Abstract: A laser device includes a gain medium, a zero-degree reflective mirror, a first retro-reflective mirror, a second retro-reflective mirror, and an output coupling mirror. The gain medium is used to generate radiation light; the zero-degree reflective mirror has a common optical axis with the gain medium, and the zero-degree reflective mirror is used to totally reflect second-direction radiation light that is incident on the zero-degree reflective mirror in an optical-axis direction; the first-direction radiation light and the first emitted light are spaced from and parallel to each other in opposite directions; the first emitted light and the second emitted light are spaced from and parallel to each other in opposite directions; a resonant cavity is formed between the zero-degree reflective mirror and the output coupling mirror; the output coupling mirror is used to transmit and output first partial radiation light, and reflect second partial radiation light.

Abstract: A radio-frequency excited carbon dioxide (CO2) or carbon monoxide (CO) gas laser includes two electrodes, which have passivated surfaces, within a sealed housing. Features in a ceramic slab or a ceramic cylinder located between the electrodes define a gain volume. Surfaces of the ceramic slab or the ceramic cylinder are separated from the passivated surfaces of the electrodes by small gaps to prevent abrasion thereof. Reducing compressive forces that secure these components within the housing further reduces abrasion, thereby extending the operational lifetime of the gas laser.

Abstract: The present disclosure relates to an approach for monitoring the output power of a VCSEL or VCSEL array in a relatively compact, low profile package. A VCSEL device or VCSEL package of the present disclosure may generally be configured with a photodiode for monitoring output power of one or more VCSELs. In some embodiments, one or more VCSEL devices may be arranged over or on a photodetector, such that the photodetector is configured to detect light emitted through a bottom of the VCSEL. In such embodiments, the VCSEL device may have a patterned bottom metal layer and/or an etched substrate to allow light to pass below or behind the VCSEL to the photodiode. In other embodiments, a photodetector may be arranged on a submount adjacent one or more VCSELs, and may be configured to detect light reflected via a diffuser in order to monitor output power.

Abstract: A method for singulating semiconductor components (20) is specified, said method comprising the steps of providing a carrier (21), applying at least two semiconductor chips (22) on the carrier (21), etching at least one break nucleus (23) at a side of the carrier (21) facing the semiconductor chips (22), and singulating at least two semiconductor components (20) by breaking the carrier (21) along the at least one break nucleus (23). The at least one break nucleus (23) extends at least in places in a vertical direction (z), the vertical direction (z) being perpendicular to a main extension plane of the carrier (21), and the at least one break nucleus (23) is arranged between the two semiconductor chips (22) in a lateral direction (x), the lateral direction (x) being parallel to the main extension plane of the carrier (21).

Abstract: A wavelength selection method for a tunable laser includes: obtaining a target wavelength; and calculating target resistance values of two thermistors, respectively, corresponding to the target wavelength. Each of the two thermistors is used to monitor the temperature of a corresponding one of two wavelength selection components. Each of the target resistance values is calculated according to a relationship between a wavelength drift and a resistance change of the corresponding thermistor and according to an initial wavelength and an initial resistance value of the corresponding thermistor corresponding to the initial wavelength. The method further includes: heating the two wavelength selection components to control their temperatures until real-time resistance values of the two thermistors reach the target resistance values, respectively; and stabilizing the real-time resistance values at the target resistance values and outputting a laser beam having the target wavelength.

Abstract: A diode laser arrangement includes a diode laser device, first and second cooling elements and at least one spacing device. The laser device and spacing device are mutually spaced apart between the first and second cooling elements. The laser device and the spacing device are disposed on respective first and second outer surfaces of respective cooling elements. The first and second cooling elements cool the laser device. The laser device has first and second diode main surfaces. The first diode main surface is on the first outer surface in a first front region and/or the second diode main surface is on the second outer surface in a second front region. The spacing device places the first outer surface in the first front region parallel to the first diode main surface, and/or the second outer surface in the second front region parallel to the second diode main surface.

Abstract: A non-reciprocal optical assembly for injection locking a laser to a resonator is described. The laser emits a light beam, and the resonator receives the light beam and returns a feedback light beam to the laser such that the feedback light beam causes injection locking. The non-reciprocal optical assembly is interposed between and optically coupled to the laser and the resonator. The non-reciprocal optical assembly includes a first port that receives the light beam from the laser, and a second port that outputs the light beam to the resonator and receives the feedback light beam from the resonator. The first port also outputs the feedback light beam to the laser. The light beam passes through the non-reciprocal optical assembly with a first power loss, and the feedback light beam passes through the non-reciprocal optical assembly with a second power loss (the first power loss differs from the second power loss).

Abstract: An apparatus and method for mounting a laser rod includes a mount having a cylindrical through hole in which the laser rod is disposed. A polymer is disposed in the cylindrical through hole in an annular space between an outer diameter of the laser rod and an inner diameter of the cylindrical through hole. The laser rod is suspended in a symmetrical thermal and mechanical interface. There is open access to the ends of the laser rod for end pumping and laser cavity alignment.

Abstract: In some implementations, an emitter module may include an emitter layer including a first emitter array configured to produce a first beam that provides flood illumination, and a second emitter array configured to produce a second beam that provides spot illumination. The emitter module may include a first optics layer, positioned in front of the emitter layer, that includes a first collimating lens positioned in front of the first emitter array, and a second collimating lens positioned in front of the second emitter array. The emitter module may include a second optics layer, positioned in front of the first optics layer, that includes an optical diffuser positioned in front of the first collimating lens, and a beamsplitter grating positioned in front of the second collimating lens.

Abstract: A tunable laser for a transceiver includes a silicon photonics substrate, first and second patterned regions each being defined in the substrate a step lower than a flat surface region of the substrate, first and second laser diode chips arranged in the first and second patterned regions, the patterned regions being configured to align the gain regions of the first and second laser diode chips with integrated couplers formed in the substrate adjacent to the first and second patterned regions to facilitate flip-bonding the first and second laser diode chips within the patterned regions, and a tuning filter coupled to the first laser diode chip and the second laser diode chip via the integrated couplers. The tuning filter is configured to receive laser light from each of the first and second laser diode chips and generate a laser output having a gain determined by each of the gain regions.

Abstract: A semiconductor laser comprises a window structure part including a low resistance active layer formed in end face regions, to have a lower resistance than an active layer located inward with respect to the end face regions. A length between the front end of the contact layer and the front end face is longer by 10 ?m or more than a length of a front-end-face side window structure part, and is shorter than a length between the front end face and the rear end of the contact layer. A length between an end of a rear side electrode on the side of the front end face and the front end face is 1.2 times or more a substrate thickness of a substrate, and is shorter than a length between the front end face and an end of the rear side electrode on the side of the rear end face.

Abstract: A laser system and method generate milliwatt-power pump light by a fiber-coupled laser diode with a single-mode integrated fiber housed in a pump enclosure. The milliwatt-power pump light is conveyed from the single-mode integrated fiber out of the first enclosure into one end of a single-mode fiber cable that is external to the pump enclosure. The milliwatt-power pump light is conveyed from an opposite end of the external single-mode fiber cable into one end of a single-mode resident fiber disposed internally within a laser-head enclosure. A crystal housed in the laser-head enclosure is pumped with the milliwatt-power pump light that exits into free space from an opposite end of the single-mode resident fiber onto a face of the crystal, to produce stable milliwatt-power single-mode laser light having a frequency stability of less than 3 MHz per minute. The stable milliwatt-power single-mode laser light is emitted from the laser-head enclosure.

Abstract: An optoelectronic semiconductor device comprises a plurality of laser devices. Each of the laser devices is configured to emit electromagnetic radiation. The laser devices are horizontally arranged. A first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from the wavelength of a further laser device of the plurality of laser devices. A difference between the first wavelength and the wavelength of the further laser device is less than 20 nm.

Abstract: A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

Abstract: A corrected mesa structure for a VCSEL device is particularly configured to compensate for variations in the shape of the created oxide aperture that result from anisotropic oxidation. In particular, a corrected mesa shape is derived by determining the shape of an as-created aperture formed by oxidizing a circular mesa structure, and then ascertaining the compensation required to convert the as-created shape into a desired (“target”) shaped aperture opening. The compensation value is then used to modify the shape of the mesa itself such that a following anisotropic oxidation yields a target-shaped oxide aperture.

Abstract: Multi-Channels coherent beam combining (CBC) using a mechanism for phase and/or polarization locking that uses a reference optical beam and an array of optical detectors each detector being configured and located to detect overall intensity of an optical interference signal caused by interfering of the reference beam and a beam of the respective channel, where the fast intensity per-channel detection allows simultaneous and quick phase/polarization locking of all channels for improving beam combining system performances.

Abstract: An optical apparatus comprises a semiconductor substrate and an optical waveguide emitter. The optical waveguide emitter comprises an input waveguide section extending from a facet of the semiconductor substrate, a turning waveguide section optically coupled with the input waveguide section, and an output waveguide section extending to the same facet and optically coupled with the turning waveguide section. One or more of the input waveguide section, the turning waveguide section, and the output waveguide section comprises an optically active region.

Abstract: A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a composite, wherein the laser bars each include a plurality of laser diode elements arranged side by side, and the laser diode elements include a common substrate and a semiconductor layer sequence arranged on the substrate, and a division of the composite at a longitudinal separation plane extending between two adjacent laser bars leads to formation of laser facets of the laser diodes to be produced, and structuring the composite at at least one longitudinal separation plane, wherein a structured region is produced in the substrate.

Abstract: A photonic circuit with a hybrid III-V on silicon or silicon-germanium active section, that comprises an amplifying medium with a III-V heterostructure (1, QW, 2) and an optical wave guide. The wave guide comprises a coupling section (31) facing a central portion of the amplifying medium, a propagation section (34, 35) and a modal transition section (32, 33) arranged between the coupling section and the propagation section. In the modal transition section, the optical wave guide widens progressively from the propagation section towards the coupling section.

Abstract: Gallium and nitrogen containing optical devices operable as laser diodes and methods of forming the same are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length, a dimension of less than 150 microns characterizing the width of the chip. The devices have a cavity oriented substantially parallel to the length of the chip.