Abstract: An optoelectronic semiconductor device comprises a plurality of laser devices. Each of the laser devices is configured to emit electromagnetic radiation. The laser devices are horizontally arranged. A first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from the wavelength of a further laser device of the plurality of laser devices. A difference between the first wavelength and the wavelength of the further laser device is less than 20 nm.

Abstract: Multi-Channels coherent beam combining (CBC) using a mechanism for phase and/or polarization locking that uses a reference optical beam and an array of optical detectors each detector being configured and located to detect overall intensity of an optical interference signal caused by interfering of the reference beam and a beam of the respective channel, where the fast intensity per-channel detection allows simultaneous and quick phase/polarization locking of all channels for improving beam combining system performances.

Abstract: An optical apparatus comprises a semiconductor substrate and an optical waveguide emitter. The optical waveguide emitter comprises an input waveguide section extending from a facet of the semiconductor substrate, a turning waveguide section optically coupled with the input waveguide section, and an output waveguide section extending to the same facet and optically coupled with the turning waveguide section. One or more of the input waveguide section, the turning waveguide section, and the output waveguide section comprises an optically active region.

Abstract: A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a composite, wherein the laser bars each include a plurality of laser diode elements arranged side by side, and the laser diode elements include a common substrate and a semiconductor layer sequence arranged on the substrate, and a division of the composite at a longitudinal separation plane extending between two adjacent laser bars leads to formation of laser facets of the laser diodes to be produced, and structuring the composite at at least one longitudinal separation plane, wherein a structured region is produced in the substrate.

Abstract: A photonic circuit with a hybrid III-V on silicon or silicon-germanium active section, that comprises an amplifying medium with a III-V heterostructure (1, QW, 2) and an optical wave guide. The wave guide comprises a coupling section (31) facing a central portion of the amplifying medium, a propagation section (34, 35) and a modal transition section (32, 33) arranged between the coupling section and the propagation section. In the modal transition section, the optical wave guide widens progressively from the propagation section towards the coupling section.

Abstract: Gallium and nitrogen containing optical devices operable as laser diodes and methods of forming the same are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length, a dimension of less than 150 microns characterizing the width of the chip. The devices have a cavity oriented substantially parallel to the length of the chip.

Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Abstract: A laser oscillator includes a housing, an optical fiber disposed in the housing and including a fused portion or a curved portion, an optical absorber positioned between the housing and the fused portion or the curved portion and configured to absorb leakage light from the optical fiber, a thermally conductive support column configured to support the optical absorber, and a cooling unit configured to cool the optical absorber via the thermally conductive support column.

Abstract: Some embodiments may include a packaged laser diode assembly, comprising: a length of optical fiber having a core and a polymer buffer in direct contact with the core, the length of optical fiber having a first section and a second section, the first section of the length of optical fiber including a tip of an input end of the optical fiber, wherein the polymer buffer covers only the second section of the first and second sections; one or more laser diodes to generate laser light; means for directing a beam derived from the laser light into the input end of the length of optical fiber; a light stripper attached to the core in the first section of the length of optical fiber. Other embodiments may be disclosed and/or claimed.

Abstract: The present disclosure provides an ultrafast laser that outputs multiple wavelengths. The ultrafast laser includes a fundamental frequency ultrafast laser unit, an optical beam splitting and polarization controlling unit, a multiple frequency unit, and an optical beam combining unit. The fundamental frequency ultrafast laser generates a multiple frequency ultrafast laser by the multiple frequency unit, such as double frequency light, triple frequency light, etc., and the optical beam combining unit makes the fundamental frequency light and the double frequency light output in a light outlet, the controlling unit controls the wavelength of the laser of the light outlet by controlling the polarization state of the laser. The ultrafast laser of the present disclosure can realize fast switching output among the fundamental frequency light and multiple frequency light, and output of combined pulse fundamental frequency light and double frequency light.

Abstract: Described herein are isolated ring cavities that have refractive and heat-generating components physically separated and mechanically held by flexure mounts that are adapted to function in combination with the physically separated structure to moderate the thermal expansion effects of the heat generated by the refractive and other heat-generating elements (e.g., gain element) of the optical cavity. The flexure mounts may be configured as thinned portions of connective elements, reducing the effects of thermal expansion of the baseplate and allowing a thermal isolation from the baseplate. Multiple flexure mounts may be arranged to minimize further the effects of thermal expansion of the baseplate.

Abstract: A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.

Abstract: Chip technology for fabricating ultra-low-noise, high-stability optical devices for use in an optical atomic clock system. The proposed chip technology uses diamond material to form stabilized lasers, frequency references, and passive laser cavity structures. By utilizing the exceptional thermal conductivity of diamond and other optical and dielectric properties, a specific temperature range of operation is proposed that allows significant reduction of the total energy required to generate and maintain an ultra-stable laser. In each configuration, the diamond-based chip is cooled by a cryogenic cooler containing liquid nitrogen.

Abstract: An array layout of VCSELs is intentionally mis-aligned with respect to the xy-plane of the device structure as defined by the crystallographic axes of the semiconductor material. The mis-alignment may take the form of skewing the emitter array with respect to the xy-plane, or rotating the emitter array. In either case, the layout pattern retains the desired, row/column structure (necessary for dicing the structure into one-dimensional arrays) while reducing the probability that an extended defect along a crystallographic plane will impact a large number of individual emitters.

Abstract: Narrow-optical linewidth laser generation devices and methods for generating a narrow-optical linewidth laser beam are provided. One narrow-optical linewidth laser generation devie includes a single-wavelength mirror or multiwavelength mirror (for comb lasers) formed from one or more optical ring resonators coupled with an optical splitter. The optical splitter may in turn be coupled with a quantum dot optical amplifier (QDOA), itself coupled with a phase-tuner. The phase tuner may be further coupled with a broadband mirror. The narrow-optical linewidth laser beam is generated by using a long laser cavity and additionally by using an integrated optical feedback.

Abstract: A transmitter unit for emitting radiation into the surrounding area, including at least one semiconductor laser, which has at least one first emitter possessing a first section and a second section; and at least one control unit for controlling the semiconductor laser. The control unit is configured to apply a first supply variable to the first section of the at least one emitter, and to apply a second supply variable differing from the first supply variable, to the second section of the at least one emitter.

Abstract: A laser is disclosed having a housing formed of a block of glass-ceramic. The block is machined (or otherwise formed) to define one or more channels that act as a waveguide in two dimensions for light within the laser resonator. The channels extend between cavities also formed within the block which retain optical components of the laser, e.g. one or more of the gain medium, cavity mirrors, intermediate reflectors etc. The positioning, shape and size of each cavity is bespoke for the optical component it holds in order that each optical component is retained in optical alignment rigidly against the sides of the cavity.

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.

Abstract: A laser device (100), being configured for generating laser pulses by Ken lens based mode locking, comprises a laser resonator (10) with a plurality of resonator mirrors (11.1, 11.2, 11.

Abstract: A cooling device (1) for cooling an electrical component (4), in particular a laser diode, including a base body (2) with at least one outer face (20) and at least one integrated cooling channel (5), in particular a micro-cooling channel, a connecting surface (21) on the outer face (20) of the base body (2) for connecting the electrical component (4) to the base body (2) and a first stabilising layer (11), wherein the first stabilising layer (11) and the connecting surface (21) are arranged at least partially one above the other along a primary direction (P), and wherein the first stabilising layer (11) is offset relative to the outer face (20) towards the interior of the base body (2) by a distance (A) along a direction parallel to the primary direction (P).