Abstract: A light receiving device includes a semiconductor substrate having a first major surface and a second major surface opposite to the first major surface, and a metal pattern layer provided on the second major surface. The first major surface is provided with a first input port configured to receive an input of signal light, a second input port configured to receive an input of local oscillation light, a first light receiving element optically coupled to the first input port, an optical 90 degree hybrid element optically coupled to the first input port and the second input port, and a second light receiving element optically coupled to the optical 90 degree hybrid element. The metal pattern layer contains at least one of titanium or chromium.

Abstract: This disclosure provides methods of fluorescence microscopy imaging for the analysis of biological samples. More particularly, this disclosure provides methods of reducing crosstalk in multiplexed fluorescence imaging.

Abstract: A microarray chip imaging detector comprises a housing configured to receive a microarray chip. The detector includes a laser assembly supported by the housing and oriented at an angle relative to the microarray chip, the laser assembly configured to transmit an excitation beam along a first axis to samples on the microarray chip. The detector also includes a camera supported by the housing and positioned along a second axis, the camera configured to receive fluorescent light emitted from fluorophores in the samples on the microarray chip, the second axis oriented at an angle less than 30 degrees relative to the first axis. The housing includes a plurality of baffles positioned between the microarray chip and the camera, and a plurality of laser beamstops to receive the excitation beam reflected off the microarray chip.

Abstract: An optical energy detector and a method for detecting a broad range of optical energy are disclosed. The detector comprising a superconducting nanowire filament on a substrate, an electrical current pulse source, a laser pulse source, a first pickup probe, and a second pickup probe for measuring the voltage across the filament. The filament is maintained below a supercomputing critical temperature. The filament is biased with an electrical current pulses slight below the critical current of the filament which creates nonequilibrium state. The filament is excited by the laser pulses, and as a result, a voltage appears after a delay time. The voltage is measured for determining the amount of the optical energy. A reference curve of the voltage and the corresponding delay time can be used for calibrating any light source.

Abstract: The invention relates to a safety device for a lifting gate, in particular for a fast-running lifting gate having a gate leaf movable up and down and guided along both lateral gate opening edges in frames, a free leading edge of the gate leaf being assigned, at a distance (D) below the leading edge, to a photoelectric barrier (LS) which travels with the movement of the gate leaf, wherein the distance (D) can be reduced in a lower end region of a travel path of the gate leaf, and wherein at least a transmitting and/or a receiving unit and/or an opposite reflector unit of the photoelectric barrier (LS) is guided and/or arranged within a frame body of the frames.

Abstract: An optical path correction subassembly, an optical detection assembly, and an optical detection system are provided. The optical path correction subassembly can be optionally configured to be applied to a light detector. The optical path correction subassembly includes a holder structure and an optical path correction structure carried by the holder structure, and the optical path correction structure has a light beam guiding surface arranged as a reverse inclination inclined relative to a vertical line. The light beam guiding surface of the optical path correction structure can be configured to effectively or accurately guide a predetermined light beam to a light receiving surface of the light detector so as to facilitate collection of the predetermined light beam. The light beam guiding surface of the optical path correction structure can be arranged at an acute angle relative to the light receiving surface of the light detector.

Abstract: In an embodiment a method for measuring ambient light includes successively synchronizing optical signal acquisition phases with extinction phases of a disruptive light source, wherein the disruptive light source periodically provides illumination phases and the extinction phases, accumulating, in each acquisition phase, photo-generated charges by at least one photosensitive pixel comprising a pinned photodiode, wherein an area of the pinned photodiode is less than or equal to 1/10 of an area of the at least one photosensitive pixel, transferring, for each pixel, the accumulated photo-generated charges to a sensing node, converting, for each pixel, the transferred charges to a voltage at a voltage node and converting, for each pixel, the transferred charges to a digital number.

Abstract: Configurable sensor units and sensor apparatus are provided. A configurable sensor unit comprises a sensor device for generating an electrical signal, dependent on a stimulus sensed by the device, in a circuit, and a programmable non-volatile memory element operable in the circuit as a load resistor for the sensor device, whereby resistance of the load resistor depends on a programmed state of the memory element. The sensor unit has an output for providing an output signal dependent on the aforementioned electrical signal and programmed state. Sensor apparatus may comprise a plurality of these configurable sensor units. Such sensor apparatus may be configured to perform in-sensor compute operations for neural network architectures. Further sensor apparatus comprises a configurable sensor unit and a controller for programming the memory element of the sensor unit to a programmed state dependent on an operating requirement for the sensor unit.

Abstract: Apparatuses, systems, method, reagents, and kits for conducting assays as well as process for their preparation are described. They are particularly well suited for conducting automated analysis in a multi-well plate assay format.

Abstract: The present disclosure provides for process and temperature compensation in a transimpedance amplifier (TIA) using a dual replica via monitoring an output of a first TIA (transimpedance amplifier) and a second TIA; configuring a first gain level of the first TIA based on a feedback resistance and a reference current applied at an input to the first TIA; configuring a second gain level of the second TIA and a third TIA based on a control voltage; and amplifying a received electrical current to generate an output voltage using the third TIA according to the second gain level. In some embodiments, one or both of the second TIA and the third TIA include a configurable feedback impedance used in compensating for changes in the second gain level due to a temperature of the respective second or third TIA via the configurable feedback impedance of the respective second or third TIA.

Abstract: An apparatus for remote detection of plant growth dynamics is described. The apparatus includes an excitation LED (light emitting diode) module, a detection module and a controller module coupled to the excitation LED module and the detection module. The excitation LED module includes at least one LED. Each LED is configured to emit an excitation light in response to an excitation control signal. The excitation light has an emitted light spectrum. The detection module includes a photodetector configured to detect an initial chlorophyll a fluorescence (“ChlF”) light and an excited ChlF light from a plant species. The photodetector is further configured to convert the detected initial ChlF light into an initial detection electrical signal and the detected excited ChlF light into an excited detection electrical signal. The excited ChlF light is emitted from the plant species in response to receiving the excitation light.

Abstract: The present disclosure relates to a solid-state image pickup apparatus, a correction method, and an electronic apparatus, enabled to suppress an apparent uncomfortable feeling of an image output from a solid-state image pickup apparatus in which pixels of different OCL shapes are mounted mixedly. A solid-state image pickup apparatus according to an aspect of the present disclosure includes a pixel array in which a first pixel in which an OCL (On Chip Lens) of a standard size is formed and a second pixel in which an OCL of a size different from the standard size is formed are present mixedly, and a correction section that corrects a pixel value of the first pixel that is positioned in the vicinity of the second pixel among the first pixels on the pixel array. The present disclosure can be applied to, for example, a CMOS image sensor.

Abstract: A remote detection method, node, and system is described. The detector includes a wireless communications module that wirelessly transmits the detection message to a remote sensing device. The remote sensing device includes a camera having a field of view and wirelessly communicates with the detector. The remote illumination and detection method performs preliminary filtering of captured image data to determine images/frames of interest with a computer vision module on board a processor in the node. The images of interest are then transmitted to a cloud computing component via a wireless or cellular network for detailed analysis to determine the presence or absence of motion or an object in each image of interest. The cloud computing component may employ machine learning computations that time and energy intensive, such as convolutional neural networks.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: A chip package structure, manufacturing method thereof, and module are described. In an embodiment, the chip package structure includes: a substrate, a wiring layer, a chip, and a second conductive bump, wherein, in an embodiment, the substrate includes a first region and a second region surrounding the first region, and the wiring layer is located on side of the substrate and includes metal wire, wherein at least part of a metal wire is in contact with the substrate in direction perpendicular to the substrate, and the metal wire overlaps with the second region, wherein the chip is located on side of the wiring layer facing away from the substrate, and the chip corresponds to the first region. In an embodiment, a first conductive bump is provided on side of the chip facing away from the substrate and is electrically connected to the metal wire.

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

Abstract: An obstacle detection system includes a light emitter that emits a light signal and a light detector configured to receive a portion of the light signal reflected back from an object. The system includes a processor operatively coupled to the light emitter and the light detector to determine a presence of an obstacle based on the portion of the light signal received by the light detector. The system includes a heater operatively coupled to a power source and at least one sensor configured to determine an ambient temperature and an ambient relative humidity. The processor is operatively coupled to the power source, the heater, and the at least one sensor. The processor is configured to calculate a dew point of the environment from the ambient relative humidity and the ambient temperature and to activate the heater in response to the ambient temperature being less than the dew point.

Abstract: The optical module includes a housing, a lid that closes an opening of the housing, an optical component arranged inside the housing, and a printed circuit board arranged on a front surface of the lid outside the housing so as to be used as a board on which a control circuit that controls the optical component is mounted. The optical module further includes a side electrode that is provided on a side surface of the housing and configured to be electrically connected to an electrode of the optical component; and a flexible substrate that provides electrical connection between the side electrode and an electrode of the control circuit. The optical module can be miniaturized by integrating the optical component and the control circuit.

Abstract: A photonic integrated circuit and a method for its manufacture are provided. In an embodiment, an intermetal dielectric layer, for example, a silicon oxide layer, is contiguous between an upper metal layer and a lower metal layer on a substrate. One or more waveguides having top and bottom faces are formed in respective waveguide layers within the intermetal dielectric layer between the upper and lower metal layers. There is a distance of at least 600 nm from the upper metal layer to the top face of the uppermost of the several waveguides. There is a distance of at least 600 nm from the lower metal layer to the bottom face of the lowermost of the several waveguides. The waveguides are formed of silicon nitride for longer wavelengths and alumina for shorter wavelengths. These dimensions and materials are favorable for CMOS processing, among other things.

Abstract: A generator of phases of a detector integrates at least one elementary machine for interpreting a microcode stored in a register. Each elementary machine includes at least one control input having a logic level change detector. Each elementary machine also includes at least one phase output having a controlled switch, enabling to define the logic level of the phase output, and a controlled inverter enabling to toggle the logic level of the phase output. Further, each elementary machine includes at least one clock signal associated with a counter, and a unit for loading the instructions and the arguments stored in the register, the instructions being coded over 3 bits.