Abstract: A semiconductor layer consisting of Ga.sub.1-x In.sub.x N.sub.y As.sub.1-y and/or GaN.sub.y As.sub.1-y and formed by incorporating nitrogen into a group III-V mixed crystal semiconductor is provided on a GaAs substrate. The hydrogen concentration in the semiconductor is kept at 5.times.10.sup.18 atoms/cm.sup.3 or below.

Abstract: A method of manufacturing a semiconductor device includes the steps of: a) forming a wiring layer on a semiconductor substrate, the wiring layer being an Al or Al alloy layer, or a laminated wiring layer including an Al or Al alloy layer and a Ti or Ti alloy layer formed thereon; b) coating a resist layer on the wringing layer and patterning the resist layer to form a wiring resist pattern; c) patterning the wiring layer to form a wiring pattern 3 by using the wiring resist pattern as a mask; d) forming an interlayer insulating film 5 on the semiconductor substrate to cover the wiring pattern; e) coating a resist layer on the interlayer insulating film and patterning the resist layer to form a connection hole resist pattern 6; f) dry-etching the interlayer insulating film with an etching gas containing fluorine to form a connection hole reaching the wiring pattern 3, by using the connection hole resist pattern as a mask; g) after the step f), rinsing the semiconductor substrate in a liquid 10 made of a materi

Abstract: An annealing method for a single crystal of fluoride is provided. The method includes the steps of removing at least one of attached objects and absorbed objects from the surface of the single crystal of fluoride to clean the surface, thereafter annealing the single crystal of fluoride, including heating the single crystal of fluoride and gradually cooling the heated single crystal of fluoride, and removing a deteriorated layer which is formed on the surface of the single crystal of fluoride during the annealing step.

Abstract: A complex (M) which is formed by growing a polycrystalline .beta.-SiC plate 4 by the thermal CVD method on crystal orientation faces which are unified in one direction of plural plate-like single crystal .alpha.-SiC pieces 2 that are stacked and closely contacted is subjected to a heat treatment at a temperature in the range of 1,850 to 2,400.degree. C., whereby a single crystal which is oriented in the same direction as the crystal axes of the single crystal .alpha.-SiC pieces 2 is grown from the crystal orientation faces of the single crystal .alpha.-SiC pieces toward the polycrystalline .beta.-SiC plate 4. As a result, single crystal SiC of a high quality in which crystalline nuclei, impurities, micropipe defects, and the like are not substantially generated in an interface can be produced easily and efficiently.

Abstract: Methods and apparatus for manufacturing silica crucibles 9 containing few, if any, white point defects. The white point defects are reduced by decreasing the amount of silica vapor condensing on electrodes 4,5,6 used in the manufacturing process. The silica vapor condensation is decreased by providing a flow of a protective or non-reactive gas or gas mixture through protective devices 11,12,13, over portions of the electrodes where the silica vapor would otherwise condense.

Abstract: A crystal growth method having the steps of: preparing a growth container having a vapor generating chamber VC provided with a source material 14, a growth chamber GC provided with a seed crystal 12, and a coupling portion 18 having a cross sectional area narrower than a cross sectional area of each of the vapor generating chamber and the growth chamber, the coupling portion coupling the vapor generating chamber and the growth chamber; and vapor-phase growing a single crystal on the seed crystal by forming a temperature gradient in the growth container and by maintaining the seed crystal in the growth chamber at a growth temperature and the source material in the vapor generating chamber at a vapor supply temperature higher than the growth temperature. A crystal having a diameter larger than that of a seed crystal can be formed easily.

Abstract: A polishing apparatus 70 is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish by a combination of chemical polishing and mechanical polishing. The polishing apparatus includes a turntable 73 with a polishing 74 cloth mounted on an upper surface thereof, a top ring 75 for supporting the workpiece to be polished and pressing the workpiece against the polishing cloth, and a dressing tool 79 for dressing the polishing cloth on the turntable. The polishing apparatus further includes a cover 10 which covers an upper surface of the turntable for preventing liquid on the turntable from being scattered, and inserting holes 17 and 21 formed in an upper wall of the cover for inserting the top ring and the dressing tool therethrough.

Abstract: A new EFG (Edge-defined Film-fed Growth) crucible/die configuration is provided which (a) overcomes the tendency for silicon feed material to form a solid mass near the center hub region in the hot-zone during the crystal growth and (b) prevent the crucible/die unit from fracturing its supporting susceptor during cool-down.

Abstract: A method to prepare thermal reactors for operation after installation, modification, upgrade and routine preventive maintenance operations. Variations in reaction rate across a wafer surface are used to determine corresponding variations in surface temperature across the wafer surface. Surface temperature variations results in thickness variations of a chemically deposited layer. For selected thicknesses, a chemically deposited layer is transparent and exhibits color variations corresponding to the thickness variations that result from the surface temperature variations. These color variations are then correlated to surface temperature variations to enable wafer heating adjustments to reduce surface temperature variations.

Abstract: A delivery system and method for providing a gaseous chemical is provided. The system comprises a single bubbler 12 having a chamber 13 for containing a liquid chemical, at least one inlet tube 14 for providing a carrier gas to said chamber, and one outlet tube 16 for providing the gaseous chemical. A liquid chemical supply line 25 conveys the liquid chemical to said chamber. A bubbler is in contact with weight measuring device 24 for weighing the bubbler and generating an output signal responsive to the measured weight. A liquid chemical controller 20 is operatively coupled to said bubbler and said supply line for filling and continuously maintaining a preselected level of the liquid chemical in said chamber responsive to said output signal.

Abstract: A method which can control crystallization of a biopolymer such as protein is provided. A silicon crystal (15) whose valence electrons are controlled to be capable of controlling the concentration of holes or electrons of the surface part in response to the environment of a buffer solution (14) containing the biopolymer such as protein is brought into contact with the solution (14), for getting a crystal of the biopolymer deposited on the surface of the silicon crystal (15). Crystallization is controlled by an electrical state which is generated by the controlled valence electrons on the surface of the silicon crystal (15).

Abstract: An apparatus and a method for producing single crystal semiconductor particulate in near spherical shape and the particulate product so formed is accomplished by producing uniform, monosized, near spherical droplets; identifying the position of an undercooled droplet in a nucleation zone; and seeding the identified droplet in the nucleation zone to initiate single crystal growth in the droplet.

Abstract: A method for improving profile control during an etch of a nitride layer disposed above a silicon substrate is disclosed. The nitride layer 106 is disposed below a photoresist mask 108A. The method includes positioning the substrate, including the nitride layer and the photoresist mask, in a plasma processing chamber. There is also included flowing a chlorine-containing etchant source gas into the plasma processing chamber. Further, there is included igniting a plasma out of the chlorine-containing etchant source gas to form a chlorine-based plasma within the plasma processing chamber. Additionally, there is included treating, using a chlorine-based plasma, the photoresist mask in the plasma processing chamber. The treatment of the photoresist is configured to etch at least a portion of the photoresist mask and to deposit passivation polymer on vertical sidewalls of the photoresist mask without etching through the nitride layer.

Abstract: A method which can control crystallization of a biopolymer such as protein is provided. A silicon crystal (15) whose valence electrons are controlled to be capable of controlling the concentration of holes or electrons of the surface part in response to the environment of a mother liquor (14) containing the biopolymer such as protein is brought into contact with a buffer solution (12), for getting a crystal of the biopolymer deposited on the surface of the silicon crystal (15). Crystallization is controlled by an electrical state which is generated by the controlled valence electrons on the surface of the silicon crystal (15).

Abstract: A method of forming circuit lines on a substrate by applying a roughened conductive metal layer using a copper foil carrier. The copper foil is etched away, leaving the roughened conductive metal embedded in the surface of the substrate. The conductive metal may be treated to remove an oxide layer. A photoresist may also be applied over the treated conductive metal layer to define a fine line circuit pattern. The photoresist defining the fine line circuit pattern is then removed to expose trenches in accordance with the desired circuit pattern. Copper is applied into the trenches over the exposed conductive metal, and the remaining photoresist, and conductive metal underlying the remaining photoresist, is removed to finish the fine line circuit pattern.

Abstract: A method and apparatus for purifying crude terephthalic acid from a liquid dispersion thereof also containing impurities selected from unreacted starting materials, solvents, products of side reactions and/or other undesired materials is provided. The method comprises the steps of filtering the dispersion to form a crude terephthalic acid filter cake, dissolving the filter cake in a selective crystallization solvent at an elevated temperature to form a solution, crystallizing purified terephthalic acid from the solution in the crystallization solvent by reducing the pressure and temperature of the solution, and separating the crystallized purified terephthalic acid from the solution. According to the invention, the selective crystallization solvent is non-aqueous, non-corrosive and essentially non-reactive with terephthalic acid. Preferably, the selective crystallization solvent is N-methyl pyrrolidone.

Abstract: An apparatus and a method for producing single crystal semiconductor particulate in near spherical shape and the particulate product so formed is accomplished by producing uniform, monosized, near spherical droplets; identifying the position of an undercooled droplet in a nucleation zone; and seeding the identified droplet in the nucleation zone to initiate single crystal growth in the droplet.

Abstract: In a semiconductor substrate comprising a silicon substrate having a porous region, and a semiconductor layer provided on the porous region, the semiconductor layer comprises a single-crystal compound and is formed on the surface of the porous region with its pores having been sealed at the surface. This substrate can be produced by a process comprising the steps of heat-treating the silicon substrate 11 having a porous region, to seal pores at the surface of the porous region 13, and forming a single-crystal compound-semiconductor layer 14 by heteroepitaxial growth on the porous region having the pores sealed by the heat treatment.Single-crystal compound semiconductor films with less crystal defects can be formed on large-area silicon substrates in a high productivity, a high uniformity, a high controllability and a great economical advantage.

Abstract: An apparatus and a method for producing single crystal semiconductor particulate in near spherical shape and the particulate product so formed is accomplished by producing uniform, monosized, near spherical droplets; identifying the position of an undercooled droplet in a nucleation zone; and seeding the identified droplet in the nucleation zone to initiate single crystal growth in the droplet.

Abstract: Nanocrystalline semiconductors are synthesized within a bicontinuous cubic atrix 10. The nanocrystalline particles 12 may then be end-capped 18 with a dispersant to prevent agglomeration. One typical nanocrystalline semiconductor compound made according to the present invention is PbS. Other IV-VI semiconductors may be produced by the method of the present invention. The method of this invention may also be used to produce doped semiconductors.