Abstract: An optoelectronic component may include a first electrode having one outer electrode segment formed at a lateral edge of the first electrode, and one inner electrode segment formed apart from the lateral edge of the first electrode, an electrically conductive current distribution structure formed above the first electrode and having one outer substructure extending over the outer electrode segment, and one inner substructure extending over the inner electrode segment and electrically insulated from the outer substructure, one current lead extending from the lateral edge of the first electrode toward the inner substructure, electrically coupled to the inner substructure, electrically insulated from the outer substructure and which structure corresponds to the current distribution structure, an insulation structure, which covers the current distribution structure and the current lead, an organic functional layer structure, and a second electrode above the organic functional layer structure.

Abstract: An organic light emitting diode (OLED) display, a display device and a manufacturing method thereof are provided. The OLED display includes a base substrate; and OLED pixel units arranged on the base substrate in a matrix. Each OLED pixel unit includes at least one OLED structure, and the OLED structure includes a cathode layer, an anode layer and an organic light emitting layer located therebetween, and the OLED pixel unit further includes a pixel circuit that is connected correspondingly with the OLED structure and configured to drive it to illuminate light. The pixel circuit includes a switching unit and a capacitor located above or below the layer in which the switching unit is located.

Abstract: The semiconductor chip including a semiconductor device layer including a pad region and a cell region, a plurality of uppermost wirings formed on the semiconductor device layer to be arranged at an equal distance in the cell region, a passivation layer formed in the cell region and the pad region, and a plurality of thermal bumps disposed on the passivation layer to be electrically insulated from the plurality of uppermost wirings may be provided. The semiconductor device layer may include a plurality of through silicon via (TSV) structures in the pad region. The plurality of uppermost wirings may extend in parallel along one direction and have a same width. The passivation layer may cover at least a top surface of the plurality of uppermost wirings in the cell region and includes a top surface having a wave shape.

Abstract: A display device includes a substrate having a plurality of transmissive regions aligned in a first direction and a second direction, a plurality of first wiring lines on the substrate extending in the first direction, a plurality of second wiring lines on the substrate extending in the second direction, and a plurality of light emitting sections disposed on the substrate. Each of the transmissive regions is surrounded by the first and second wiring lines. The light emitting sections include a first light emitting section and a second light emitting section. At least part of the first light emitting section is located in a region that is adjacent to the transmissive regions and overlap one of the first wiring lines. At least part of the second light emitting section is located in a region that is adjacent to the transmissive regions and overlap one of the second wiring lines.

Abstract: The present disclosure discloses an LED package structure and a chip-scale light emitting unit. The chip-scale light emitting unit includes an LED chip, a phosphor sheet, and at least one light guiding group. The phosphor sheet covers entirely a top surface of the LED chip. The phosphor sheet has a light emitting surface arranged away from the LED chip, and the light emitting surface has a central region and a ring-shaped region surrounding the central region. The light guiding group is disposed on the ring-shaped region and covers at least 60% of an area of the ring-shaped region of the phosphor sheet, and the central region is not covered by the light guiding group. The light guiding group includes a plurality of light guiding micro-structures.

Abstract: A FinFET device and a method for fabricating the same are provided. In the method for fabricating the FinFET device, at first, a semiconductor substrate having fin structures is provided. Then, a dielectric layer and a dummy gate structure are sequentially formed on the semiconductor substrate. The dummy gate structure includes two dummy gate stacks, a gate isolation structure formed between and adjoining the dummy gate stacks, and two spacers sandwiching the dummy gate stacks and the gate isolation structure. Then, the dummy gate stacks are removed to expose portions of the dielectric layer and to expose sidewalls of portions of the spacers. Thereafter, an oxidizing treatment is conducted on the exposed portions of the dielectric layer and the portions of the spacers to increase quality of the dielectric layer.

Abstract: A method of fabricating a monolithic three dimensional memory structure is provided. The method includes forming a stack of alternating word line and dielectric layers above a substrate, forming a source line above the substrate, forming a memory hole extending through the alternating word line and dielectric layers and the source line, and forming a mechanical support element on the substrate adjacent to the memory hole.

Abstract: The present application relates to a plastic substrate, a method for producing same, an organic electronic device, and display light source and lighting apparatus. The plastic substrate according to the present application has superb light extraction efficiency and exhibits an excellent surface roughness characteristic. Furthermore, the method for producing the plastic substrate according to the present application can produce the plastic substrate by means of a process in which scattering components are added secondarily. Moreover, the plastic substrate according to the present application can be utilized as a substrate for an organic electronic device, and the organic electronic device can be utilized as display light source and lighting apparatus.

Abstract: A flexible display and a method of manufacturing the same are disclosed. In one aspect, the method includes forming a sacrificial layer on a support substrate, wherein the sacrificial layer includes a plurality of patterns continuously formed thereon and a plurality of grooves formed between the patterns. The method also includes forming a display unit on the sacrificial layer, dissolving and removing the sacrificial layer with water and separating the display unit from the support substrate.

Abstract: An organic light-emitting display panel includes a plurality of pixel columns, a plurality of first signal lines, and a plurality of second signal lines. Each of the pixel columns includes a plurality of organic light-emitting pixels. The first signal lines are arranged to correspond to the pixel columns. Each of the first signal lines connected to the organic light-emitting pixels of a corresponding pixel column. The second signal lines are respectively connected to the first signal lines and provide a first power supply voltage to corresponding ones of the first signal lines. Each of the second signal lines is connected substantially to a center portion of the corresponding first signal line.

Abstract: This disclosure provides an OLED substrate and a producing method thereof, a panel, and a display apparatus, and pertains to the field of OLED products and production. The OLED substrate comprises an OLED device and an encapsulating layer, which are located on a first substrate, wherein the encapsulating layer encapsulates the OLED device, and wherein the OLED substrate further comprises a heat-dissipating layer which is provided above the OLED device. By adding a heat-dissipating layer and by means of the good thermal conductivity of the heat-dissipating layer, the heat generated when OLED devices are lit is rapidly dissipated, so as to prolong the service life of OLED devices, such that the service life of OLED panel and in turn the service life of display apparatus are prolonged.

Abstract: Disclosed are an organic light emitting display device capable of achieving an intra-pixel integration design with sufficient storage capcacitance and a method for manufacturing the same in which the organic light emitting display device includes a first active layer connected to the driving gate electrode and the data line while crossing the gate line, and a second active layer spaced apart from the first active layer while overlapping the driving gate electrode and being connected to the current drive line and storage electrode.

Abstract: A liquid crystal display (LCD) device capable of preventing impurities from permeating into a channel area of a switching element, the LCD device including: a gate electrode above a substrate; a semiconductor layer which overlaps the gate electrode; a drain electrode and a source electrode which overlap the semiconductor layer; an ohmic contact layer between the semiconductor layer and the drain electrode and between the semiconductor layer and the source electrode; a pixel electrode which is connected to one of the drain electrode and the source electrode; and a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer comprising fluorine. A concentration of the fluorine is decreasing, as the fluorine of the gate insulating layer being more adjacent to the substrate.

Abstract: Various implementations described herein are directed to a method for assessing risks of compartmentalization. In one implementation, the method may include receiving seismic data for a formation of interest; identifying areas in the formation having a dip angle greater than about 30 degrees; performing a plurality of downhole fluid analysis (DFA) within a wellbore around the formation having the dip angle greater than about 30 degrees to identify areas experiencing mass density inversion; and determining the areas experiencing mass density inversion by DFA as having one or more risks of compartmentalization.

Abstract: A method of forming a thin film transistor (TFT) that includes forming a low temperature polysilicon semiconductor layer on a substrate; and implanting first dopant regions on opposing sides of a channel region of the low temperature polysilicon semiconductor layer. The method may further include epitaxially forming second dopant regions on the first dopant regions. The concentration of the conductivity type dopant in the second dopant regions is greater than a concentration of the conductivity type dopant in the first dopant region. The second dopant regions are formed using a low temperature epitaxial deposition process at a temperature less than 350° C.

Abstract: An optical detector includes a sensor device chip including a substrate and a sensor device that is provided at a front face side of the substrate and detects light entering from a back face side of the substrate. The sensor device chip has, at the back face side of the substrate, a region in which a refractive index varies so as to increase from a light incident face toward a thicknesswise direction.

Abstract: A graphene electronic device includes a gate insulating layer on a conductive substrate, a channel layer on the gate insulating layer, and a source electrode on one end of the channel layer and a drain electrode on another end of the channel layer. The channel layer includes a semiconductor layer and a graphene layer in direct contact with the semiconductor layer, and the graphene layer includes a plurality of graphene islands spaced apart from each other.

Abstract: An embodiment method for forming a semiconductor package includes attaching a first die to a first carrier, depositing a first isolation material around the first die, and after depositing the first isolation material, bonding a second die to the first die. Bonding the second die to the first die includes forming a dielectric-to-dielectric bond. The method further includes removing the first carrier and forming fan-out redistribution layers (RDLs) on an opposing side of the first die as the second die. The fan-out RDLs are electrically connected to the first die and the second die.

Abstract: Method, apparatus and systems for managing product distribution and a data hub for connecting and integrating related systems are described herein. Data hubs are integrated with external sensors and automated systems to remove stress points for operating such systems. A distribution system which may interface with the data hubs allows for efficient distribution of products produces and monitored by environments that suffer such stress points.

Abstract: An object of the present invention is to provide a two-sided light emission-type transparent organic electroluminescence element that has flexibility, has a small viewing angle dependence of chromaticity, and can easily adjust the light-emission balance of the two sides. The organic electroluminescence element of the present invention is characterized by being comprised by at least a transparent substrate, a first transparent electrode, an organic light-emitting layer, a second transparent electrode and a transparent sealing substrate, wherein both of the transparent substrate and the transparent sealing substrate have flexibility and are comprised by material(s) selected from an identical group of materials, and the first transparent electrode and the second transparent electrode are comprised by material(s) selected from an identical group of materials.