Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.

Abstract: A method of controlling an air blowing apparatus includes: determining whether there is precipitation through a rain sensor by a controller; determining whether the air blowing apparatus is in an automatic mode in a precipitation condition by the controller; determining a vehicle speed when the air blowing apparatus is in the automatic mode in the precipitation condition; and setting power and a spray angle of the air blowing apparatus by comparing a rainfall received from the rain sensor to a stored rainfall by the controller. Setting the power and the spray angle of the air blowing apparatus includes compensating the spray angle and a spray amount by measuring a flow speed and a flow angle of rainwater through the rain sensor by the controller.

Abstract: Compositions and methods for etching a nanoscale geometry on a metal or metal alloy surface are disclosed. Such surfaces, when included on an implantable medical device, enhance healing after surgery. When included on a bone contacting medical implant, the nanoscale geometry may enhance osseointegration. When included on a tissue contacting device, the nanoscale geometry may enhance endothelial cell attachment, proliferation, and restoration of a healthy endothelial surface.

Abstract: Compositions and methods for etching a surface of an implantable device are disclosed. The compositions generally include one or more alkali components, such as a metal hydroxide and optionally an amine, one or more chelating agents, and certain dissolved metals, such as component metals of the metal or alloy to be etched and optionally iron. For example, when etching a titanium device, the metals may include titanium (Ti). Alternatively, the composition may be an electrolyte composition useful for electrochemical etching of the implantable device. These compositions and methods may generate nanoscale geometry on the surface of the implantable device to provide implants with accelerate osseointegration and healing after surgery.

Abstract: A method for the surface treatment of flat products made of aluminium alloys. The method includes pickling the flat product, in particular for degreasing the flat product. The method includes carrying out a colour measurement on the surface of the flat product to determine at least one measured colour value after pickling the flat product. The method includes generating output information on the basis of the at least one measured colour value. The output information is indicative of compliance with at least one rule for the measured colour value and outputting or triggering the output of the output information. The invention further relates to a device for the surface treatment of flat products made of aluminium alloys and to a use of a colorimeter which is configured to determine at least one measured colour value in a surface treatment of flat products made of aluminium alloys.

Abstract: Systems and methods for rinsing beverage residue from a mechanical interface between threads of a bottle and threads of a bottle cap is described. The bottle cap may include a sealable coating to create a seal against a rim of the bottle. The bottle cap may also include passages to allow pressurized water to be injected into an upper inner region of the bottle cap. The pressurized water is prevented from entering the bottle due to the seal between the rim of the bottle and the sealable coating of the bottle cap. Therefore, the pressurized water is caused to escape through the mechanical thread interface toward a lower inner region of the bottle cap where the water escapes from the cap at atmospheric pressure.

Abstract: A method for passivating sidewalls of patterned semiconductor wafer including ridge(s). The method includes: depositing first layer of first dielectric material on pattern surface of said wafer; etching portion of first layer to obtain tapered portions of first dielectric material along sidewall(s) of ridge(s); depositing second layer of second dielectric material on tapered portions and said wafer; depositing photo-sensitive material on second layer; aligning mask with photo-sensitive material, wherein portion(s) of photo-sensitive material corresponding to top surface of ridge(s) is/are unmasked, and remaining portion is masked; applying developing solution and exposing photo-sensitive material to remove portion(s) of photo-sensitive material; etching portion(s) of second layer that is/are deposited on top surface of ridge(s); and removing photo-sensitive material.

Abstract: Described herein is an etching solution suitable for the selective removal of TiSiN over hafnium oxide from a microelectronic device, which consists essentially of: water; at least one alkaline ammonium compound selected from the group consisting of ammonium hydroxide, a quaternary ammonium hydroxide, ammonium fluoride, and a quaternary ammonium fluoride; at least one peroxide compound; a water-miscible organic solvent; at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, and a polyamine; and optionally at least one chelating agent.

Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.

Abstract: Metal powder particles for use in additive manufacturing are made by removing material from the surface of the particles using wet chemical etching to create a nanoscale texturing of the surface, increasing absorptivity by the metal powder particles of incident laser light and maintaining flowability. The nanoscale texturing has sub-wavelength features at laser wavelengths in the range 800-1100 nm. The particles are substantially spherical and have mean diameters in the range 10-70 ?m.

Abstract: A method includes etching a semiconductor substrate to form a trench, with the semiconductor substrate having a sidewall facing the trench, and depositing a first semiconductor layer extending into the trench. The first semiconductor layer includes a first bottom portion at a bottom of the trench, and a first sidewall portion on the sidewall of the semiconductor substrate. The first sidewall portion is removed to reveal the sidewall of the semiconductor substrate. The method further includes depositing a second semiconductor layer extending into the trench, with the second semiconductor layer having a second bottom portion over the first bottom portion, and a second sidewall portion contacting the sidewall of the semiconductor substrate. The second sidewall portion is removed to reveal the sidewall of the semiconductor substrate.

Abstract: A method of etching an electrically conductive layer structure during manufacturing a component carrier is provided. The method includes subjecting the electrically conductive layer structure to an etching composition having an etchant and a photosensitive compound to thereby form a recess in the electrically conductive layer structure; while, at least for a part of time, irradiating and/or heating the recess. In addition, an apparatus for etching an electrically conductive layer structure during manufacturing a component carrier, an etched electrically conductive layer structure and a component carrier are provided.

Abstract: A method for patterning a layer increases the density of features formed over an initial patterning layer using a series of self-aligned spacers. A layer to be etched is provided, then an initial sacrificial patterning layer, for example formed using optical lithography, is formed over the layer to be etched. Depending on the embodiment, the patterning layer may be trimmed, then a series of spacer layers formed and etched. The number of spacer layers and their target dimensions depends on the desired increase in feature density. An in-process semiconductor device and electronic system is also described.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes forming a first patterned layer over a substrate; forming a second patterned layer over the substrate and alternately arranged with the first patterned layer; performing an etching, thereby forming an arched surface of the first patterned layer and an arched surface of the second patterned layer; forming a sacrificial layer over the first patterned layer and the second patterned layer, wherein a plurality of air gaps are defined by the substrate, the first patterned layer, the second patterned layer and the sacrificial layer; removing the sacrificial layer above the plurality of air gaps, thereby forming a planar top surface of the first patterned layer and a planar top surface of the second patterned layer; and patterning the substrate using the first patterned layer and the second patterned layer as a mask.

Abstract: Provided are an aqueous composition with which the surface of stainless steel is adequately roughened in an efficient manner with few steps, a method for roughening stainless steel, etc. The problem mentioned above is solved by an aqueous composition for roughening the surface of stainless steel, the aqueous composition including 0.1-20 mass % of hydrogen peroxide with reference to the total amount of the aqueous composition, 0.25-40 mass % of copper ions with reference to the total amount of the aqueous composition, and 1-30 mass % of halide ions with reference to the total amount of the aqueous composition.

Abstract: A processing solution containing solvent and solute is supplied onto a substrate (9). The processing solution transforms into a particle retention layer as a result of at least part of the solvent being volatilized from the processing solution and causing the processing solution to solidify or harden. The particle retention layer is removed from the substrate (9) by supplying a removal liquid onto the substrate (9). A solute component contained in the particle retention layer is insoluble or poorly soluble in the removal liquid, whereas the solvent is soluble. The solute component contained in the particle retention layer has the property of being altered to become soluble in the removal liquid when heated to a temperature higher than or equal to an alteration temperature. The removal liquid is supplied after the formation of the particle retention layer, without undergoing a process of alternating the solute component.

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

Abstract: Processing methods may be performed to form a filled contact hole in a mirror layer of a semiconductor substrate. The method may include forming a contact hole through a mirror layer of the semiconductor substrate by an etch process. The method may include filling the contact hole with a fill material. A portion of the fill material may overlie the mirror layer. The method may also include removing a portion of the fill material external to the contact hole by chemical mechanical polishing landing on the mirror layer.

Abstract: A substrate processing method includes a first process of supplying an etching liquid to a peripheral portion of a substrate while rotating the substrate having a metal polycrystalline film formed on a front surface thereof; a second process of supplying a rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first process while rotating the substrate; a third process of supplying the etching liquid to the peripheral portion of the substrate while rotating the substrate; a fourth process of supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third process while rotating the substrate; and a fifth process of drying the substrate after the fourth process.

Abstract: A method of patterning a substrate. The method may include providing a surface feature on the substrate, the surface feature having a first dimension along a first direction within a substrate plane, and a second dimension along a second direction within the substrate plane, wherein the second direction is perpendicular to the first direction; and directing first ions in a first exposure to the surface feature along the first direction at a non-zero angle of incidence with respect to a perpendicular to the substrate plane, in a presence of a reactive ambient containing a reactive species; wherein the first exposure etches the surface feature along the first direction, wherein after the directing, the surface feature retains the second dimension along the second direction, and wherein the surface feature has a third dimension along the first direction different than the first dimension.