Patents Examined by Elizabeth A Burkhart
  • Film forming method
    Patent number: 10829854
    Abstract: There is provided a film forming method of forming a metal film, which includes: alternately supplying a metal chloride gas and a reducing gas for reducing the metal chloride gas to a substrate arranged inside a processing vessel a plurality of times, wherein the alternately supplying the metal chloride gas and the reducing gas includes a period of time during which a flow rate of the metal chloride gas gradually increases.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: November 10, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kensaku Narushima, Katsumasa Yamaguchi
  • Chemical vapor deposition raw material including dinuclear ruthenium complex and chemical deposition method using chemical vapor deposition raw material
    Patent number: 10815260
    Abstract: The present invention relates to a chemical vapor deposition raw material for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the chemical vapor deposition raw material including a dinuclear ruthenium complex in which carbonyl and a nitrogen-containing organic ligand (L) are coordinated to metallically bonded two rutheniums, the dinuclear ruthenium complex being represented by the following formula (1): A raw material according to the present invention is capable of producing a high-purity ruthenium thin film, and has a low melting point and moderate thermal stability. Thus, the raw material according to the present invention is suitable for use in electrodes of various kinds of devices.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: October 27, 2020
    Assignee: TANAKA KIKINZOKU KOGYO K.K.
    Inventors: Ryosuke Harada, Toshiyuki Shigetomi, Tasuku Ishizaka, Tatsutaka Aoyama
  • Vapor phase deposition of organic films
    Patent number: 10814349
    Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: October 27, 2020
    Assignee: ASM IP HOLDING B.V.
    Inventors: Viljami J. Pore, Marko Tuominen, Hannu Huotari
  • Coating compositions, methods and articles produced thereby
    Patent number: 10801099
    Abstract: Powder compositions are described having, as constituents: an aluminum donor powder, an aluminum-containing activator powder comprising at least 50 wt. % KAlF4, and an inert filler powder. Related methods and coatings are also described.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: October 13, 2020
    Assignee: ENDURANCE TECHNOLOGIES, INC.
    Inventor: Eugene Medvedovski
  • Vapor deposition apparatus and techniques using high puritiy polymer derived silicon carbide
    Patent number: 10753010
    Abstract: Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.
    Type: Grant
    Filed: September 23, 2016
    Date of Patent: August 25, 2020
    Assignee: Pallidus, Inc.
    Inventor: Mark S. Land
  • Methods of applying silane coatings
    Patent number: 10752989
    Abstract: A method of vapor depositing a silane chemical onto a wire grid polarizer can include introducing a silane chemical and water into a chamber where the wire grid polarizer is located. The silane chemical and the water can be in a gaseous phase in the chamber. The silane chemical and the water can be maintained simultaneously in the gaseous phase in the chamber for period of time. The silane chemical and the water can react to form a (R1)2Si(OH)2 molecule, where each R1 is independently any chemical element or group. A silane coating can be formed on the wire grid polarizer from a chemical reaction of the (R1)2Si(OH)2 molecule with the wire grid polarizer and with other (R1)2Si(OH)2 molecules. The silane coating can be relatively thick and multi-layer. A thicker or multi-layer silane coating can have improved high temperature resistance relative to a thinner or mono-layer silane coating.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: August 25, 2020
    Assignee: Moxtek, Inc.
    Inventors: Anubhav Diwan, Matt Linford
  • Atomic layer deposition method of metal-containing thin film
    Patent number: 10752992
    Abstract: Provided is a method for depositing a gallium-containing thin film by atomic layer deposition (ALD) without using radical species such as plasma and ozone using a gallium-containing precursor having a high vapor pressure even at low temperature and high thermal stability. Gallium (I) having a cyclopentadienyl ligand as illustrated below has a sufficiently high thermal decomposition temperature, a sufficiently high vapor pressure at a low temperature, and high reactivity, and as a result, is suitable for low temperature ALD. An atomic layer deposition method of a metal-containing thin film using a precursor represented by the following general formula (1) (In general formula (1), R1 to R5 each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms).
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: August 25, 2020
    Assignee: KOJUNDO CHEMICAL LABORATORY CO., LTD.
    Inventors: Fumikazu Mizutani, Shintaro Higashi
  • Molybdenum silylcyclopentadienyl and silylallyl complexes and use thereof in thin film deposition
    Patent number: 10745430
    Abstract: Molybdenum complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The molybdenum complexes correspond in structure to Formula (I): wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, and R10 are independently selected from the group consisting of hydrogen, alkyl, and trialkylsilyl; and at least one of R1, R2, R3, R4, R5, R6, R7, R8, R9, and R10 is trialkylsilyl.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: August 18, 2020
    Assignee: MERCK PATENT GMBH
    Inventors: Shaun Garratt, Paul Williams
  • Mixing dimers for moisture resistant materials
    Patent number: 10743421
    Abstract: A coating apparatus includes a first vaporizer configured to vaporize a first precursor material, a second vaporizer configured to vaporize a second precursor material in series with the first vaporizer, at least one pyrolysis chamber configured to further process vaporized precursor material from one of the first vaporizer or second vaporizer, and a deposition chamber configured to receive the processed precursor materials.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: August 11, 2020
    Inventors: Yang Yun, Tining Su
  • Controlling temperature in an apparatus for generating a three-dimensional object
    Patent number: 10730242
    Abstract: A method of controlling temperature in an apparatus for generating a three-dimensional object comprises performing a calibration test on a sample of build material that is to be used in generating a three-dimensional object, calibrating at least one temperature point from the calibration test, and using the at least one calibrated temperature point during subsequent temperature control of the apparatus.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: August 4, 2020
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Pol Fornos, Sergio Puigardeu Aramendia, David Ramirez Muela, Salvador Sanchez Ribes
  • Direct graphene growing method
    Patent number: 10723620
    Abstract: A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.
    Type: Grant
    Filed: May 7, 2012
    Date of Patent: July 28, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeon-jin Shin, Jae-young Choi, Yun-sung Woo, Seon-mi Yoon
  • Optical substrates having light collimating and diffusion structures
    Patent number: 10725330
    Abstract: This invention discloses a method of forming a prism sheet.
    Type: Grant
    Filed: January 2, 2018
    Date of Patent: July 28, 2020
    Assignee: UBRIGHT OPTRONICS CORPORATION
    Inventors: Ching-An Yang, Han-Tsung Pan
  • Lens holder and method of use
    Patent number: 10717169
    Abstract: A lens holder assembly (49) and method of using the lens holder assembly (49) to mark an ophthalmic lens (3) is provided. The lens holder assembly (49) comprises a stem (61) having a central axis and a first opening (5) extending along the central axis of the body (65), a second opening (7) integrated within the stem (61) such that the second opening (7) is substantially parallel to the first opening (5), and at least one illumination source positioned within the second opening (7). The illumination source is capable of emitting light through the second opening (7) for illuminating at least a portion of an ophthalmic lens (3). At least a portion of the lens (3) is placed over the first opening (5). Suction is applied to the lens (3), and a marking is applied to a surface of the lens (3).
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: July 21, 2020
    Assignee: Essilor International (Compagnie Generale d'Optique)
    Inventors: Pamela Anne McClimans, John Guerra
  • 6-membered cyclic dienes as strongly reducing precursors for the growth of element films by vapor phase deposition
    Patent number: 10711346
    Abstract: A method for reducing an atom to a reduced oxidation state includes a step of providing a vapor of a first compound having an atom in an oxidized state. A vapor of a reducing agent is provided. The reducing agent is selected from the group consisting of compounds described by formulae I, II, and III: where R1, R2 R3, R4 are each independently H, C1-10 alkyl, C6-14 aryl, or C4-14 heteroaryl. The vapor of the first compound is reacted with the vapor of the reducing agent to form a second compound having the atom in a reduced state relative to the first compound.
    Type: Grant
    Filed: August 3, 2016
    Date of Patent: July 14, 2020
    Assignee: Wayne State University
    Inventor: Charles H. Winter
  • Compositions and methods for the deposition of silicon oxide films
    Patent number: 10703915
    Abstract: Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: July 7, 2020
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Xinjian Lei, Meiliang Wang, Matthew R. MacDonald, Richard Ho, Manchao Xiao, Suresh Kalpatu Rajaraman
  • Vapor phase deposition of organic films
    Patent number: 10695794
    Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.
    Type: Grant
    Filed: October 9, 2015
    Date of Patent: June 30, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Viljami J. Pore, Marko Tuominen, Hannu Huotari
  • Substrate processing apparatus, substrate processing method and recording medium
    Patent number: 10689762
    Abstract: A substrate processing apparatus can suppress particle generation on a substrate, and can reduce a consumption amount of a processing liquid. A substrate processing apparatus 1 includes a processing chamber 30 having a processing space 31 in which a substrate W is processed; a vaporizing tank 60, configured to store the processing liquid therein, having a vaporization space 61 in which the stored processing liquid is allowed to be vaporized; a decompression driving unit 70 configured to decompress the vaporization space 61; and a control unit 18. The control unit 18 vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 without through the processing space 31, and then, vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 through the processing space 31, and supplies an inert gas into the vaporization space 61.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: June 23, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akira Murata, Satoshi Kaneko, Kazuki Motomatsu, Kazunori Sakamoto
  • Method of coating a lens and lens support
    Patent number: 10688522
    Abstract: The present invention relates to a method of coating a lens, such as a segmented multifocal lens. The method includes, providing a lens support (1), which is in the form of a ring, that includes a central axis (11), an outer wall (14), an inner wall (17) that is positioned between the central axis and the outer wall, an upper beveled surface (20) that converges downward toward the central axis, and a lower surface (29). The method further includes positioning a lens (3) such that an outer edge (74) of a forward surface (65) thereof abuts a portion of the upper beveled surface of the lens support. At least one coating composition is applied over the rear surface (68) of the lens, so as to form a coated lens (3?) having at least one coating layer (89) over the rear surface thereof.
    Type: Grant
    Filed: November 17, 2014
    Date of Patent: June 23, 2020
    Assignee: Transitions Optical, Inc.
    Inventors: Paul J. Lynch, Gerard P. Mullen
  • Gas jetting apparatus for film formation apparatus
    Patent number: 10676825
    Abstract: The gas jetting apparatus according to the present invention includes a gas jetting cell unit for rectifying a gas and jetting the rectified gas into the film formation apparatus. The gas jetting cell unit has a fan shape internally formed with a gap serving as a gas route. A gas in a gas dispersion supply unit enters from a wider-width side of the fan shape into the gap, and, due to the fan shape, the gas is rectified, accelerated, and output from a narrower-width side of the fan shape into the film formation apparatus.
    Type: Grant
    Filed: October 29, 2014
    Date of Patent: June 9, 2020
    Assignee: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
    Inventors: Yoichiro Tabata, Kensuke Watanabe, Shinichi Nishimura
  • Multi-layer deposition system and process
    Patent number: 10669627
    Abstract: A modular multilayer deposition system includes a plurality of modular deposition chambers, including at least one parylene deposition chamber and at least one ALD deposition chamber. The parylene deposition chamber is connected in series with the ALD deposition chamber. Substrates are automatically moved from within the parylene deposition chamber to within the ALD deposition chamber or from within the ALD deposition chamber to the parylene deposition chamber.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: June 2, 2020
    Assignee: HzO, Inc.
    Inventors: Yang Yun, Max Sorenson, Chien-Lan Hsueh, Tining Su, Jim Dempster, Alex Anderson, Layton Baker