Patents Examined by Feifei Yeung-Lopez
  • Patent number: 11508657
    Abstract: Semiconductor devices having inductive structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a substrate and at least one circuit component coupled to the substrate. The semiconductor device can further include an inductive structure carried by the substrate and having a stack of alternating first and second layers. In some embodiments, the first layers comprise an oxide material and the second layers each include a coil of conductive material. The coils of conductive material can be electrically coupled (a) together to form an inductor and (b) to the at least one circuit component.
    Type: Grant
    Filed: August 11, 2020
    Date of Patent: November 22, 2022
    Assignee: Micron Technology, Inc.
    Inventors: James E. Davis, Kevin G. Duesman
  • Patent number: 11508715
    Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chip structures with electrical overstress protection are disclosed. LED chip structures are disclosed that include built-in electrical overstress protection. An exemplary LED chip may include an active LED structure that is arranged as a primary light-emitting structure and a separate active LED structure that is arranged as an electrical overstress protection structure. The electrical overstress protection structure may be electrically connected in reverse relative to the primary light-emitting structure. In this manner, under normal operating conditions, forward current will flow through the primary light-emitting structure to generate desired light emissions, and during an electrical overstress event, reverse current may flow through the electrical overstress protection structure, thereby protecting the light-emitting structure from damage.
    Type: Grant
    Filed: April 24, 2020
    Date of Patent: November 22, 2022
    Assignee: CreeLED, Inc.
    Inventors: Daniel E. Stasiw, Steven Wuester, Michael Check
  • Patent number: 11508706
    Abstract: A light-emitting module includes: a lightguide plate having a main surface and including a plurality of unit regions including at least one first unit region and a plurality of second unit regions, the lightguide plate including a plurality of first recesses in the main surface; a plurality of light sources provided at the main surface, each of the light sources being located in the first recess so as to correspond to one of the unit regions; and a light-transmitting member provided in the first recess of each of the unit regions. In the second unit regions, an optical axis of the light sources is coincident with a center of the first recess. In the first unit region, the optical axis of the light source is offset from the center of the first recess, and an upper surface of the light-transmitting member has a first receding part.
    Type: Grant
    Filed: September 25, 2020
    Date of Patent: November 22, 2022
    Assignee: NICHIA CORPORATION
    Inventor: Daisuke Kasai
  • Patent number: 11502228
    Abstract: A method of producing an optoelectronic semiconductor device includes providing a frame part including a plurality of openings, providing an auxiliary carrier, connecting the auxiliary carrier to the frame part such that the auxiliary carrier covers at least some of the openings at an underside of the frame part, placing conversion elements onto the auxiliary carrier in at least some of the openings, placing optoelectronic semiconductor chips onto the conversion elements in at least some of the openings, applying a housing onto the conversion elements and around the semiconductor chips in at least some of the openings, and removing the frame part and the auxiliary carrier wherein a bottom surface of at least some of the optoelectronic semiconductor chips remains free of the housing.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: November 15, 2022
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Seng-Teong Chang, Choon Keat Or, Lee-Ying Jacqueline Ng, Chai-Yun Jade Looi
  • Patent number: 11502229
    Abstract: A light source module includes a circuit board, light emitting diode chips on an upper surface of the circuit board, the light emitting diode chips being spaced apart and each emitting blue light and having a first surface facing the upper surface of the circuit board, a second surface opposite the first surface, and first and second electrodes on the first surface, a first multilayer reflective structure on the second surface and including a plurality of alternately stacked insulating layers having different refractive indices, and a lens respectively covering each of the light emitting diode chips and contacting the upper surface of the circuit board at an acute contact angle, the lens having a thickness of 2.5 mm or less from the upper surface of the circuit board, and a contact region with the upper surface of the circuit board with a diameter of 1 mm to 3 mm.
    Type: Grant
    Filed: October 1, 2020
    Date of Patent: November 15, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chigoo Kang, Seogho Lim, Ilseop Won, Jungwoo Lee
  • Patent number: 11495633
    Abstract: A CMOS image sensor includes a substrate and at least one device isolation region in the substrate and defining first and second pixel regions and first and second active portions in each of the first and second pixel regions. A reset and select transistor gates are disposed in the first pixel region, while a source follower transistor gate is disposed in the second pixel region, such that pixels in the first and second pixel regions share the reset, select and source follower transistors. A length of the source follower transistor gate may be greater than lengths of the reset and selection transistor gates.
    Type: Grant
    Filed: September 24, 2020
    Date of Patent: November 8, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Hisanori Ihara
  • Patent number: 11489109
    Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.
    Type: Grant
    Filed: November 19, 2020
    Date of Patent: November 1, 2022
    Assignee: TDK CORPORATION
    Inventors: Yohei Shiokawa, Minoru Ota, Tomoyuki Sasaki, Yoshitomo Tanaka
  • Patent number: 11488941
    Abstract: A light-emitting device is provided, including a light-emitting unit and an optical layer. The light-emitting unit includes a light-emitting chip and an encapsulation disposed thereon. The optical layer is disposed on the light-emitting unit, the optical layer having a first region overlapping the light-emitting chip in a top view direction of the light-emitting device and a second region not overlapping the light-emitting chip in the top view direction of the light-emitting device, wherein the transmittance of the first region is less than the transmittance of the second region.
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: November 1, 2022
    Assignee: INNOLUX CORPORATION
    Inventors: Shun-Yuan Hu, Chin-Lung Ting, Ker-Yih Kao, Li-Wei Mao
  • Patent number: 11482568
    Abstract: A flexible surface lighting device is disclosed. The flexible surface lighting device includes: a flexible substrate including an upper insulating film, a lower insulating film, and a thin metal layer interposed between the upper and lower insulating films; a plurality of micro-LED chips two-dimensionally arrayed on the top surface of the flexible substrate; and a flexible light-transmitting resin part disposed on the top surface of the flexible substrate to cover the top and side surfaces of the micro-LED chips. The flexible substrate includes a white reflective layer in contact with the light-transmitting resin part on the upper insulating film.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: October 25, 2022
    Assignee: LUMENS CO., LTD.
    Inventors: Jeongwoo Lee, Junhyung Lim, Hyunpyo Hong, Jihye Chang, Bogyun Kim, Youngkyo Ro, Gunha Kim, Jugyeong Mun
  • Patent number: 11482554
    Abstract: A semiconductor package including a substrate, a memory chip on the substrate, a mold layer on the substrate to cover a side surface of the memory chip, an image sensor chip on the memory chip and the mold layer, and a connection terminal between and electrically connecting the memory chip to the image sensor chip may be provided.
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: October 25, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Un-Byoung Kang, Yungcheol Kong, Hyunsu Jun, Kyoungsei Choi
  • Patent number: 11469359
    Abstract: A backplane and a glass-based circuit board. The backplane includes: a base substrate and a plurality of light-emitting units, arranged in an array on the base substrate. Each of the light-emitting units (110) includes at least one light-emitting sub-unit; the light-emitting sub-unit includes a connection line (200) and a plurality of light-emitting diode chips connected with the connection line, and the light-emitting diode chips are located on a side of the connection line away from the base substrate. The light-emitting diode chips (300) in the at least one light-emitting sub-unit are connected in series.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: October 11, 2022
    Assignees: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wengang Su, Wei Hao, Haiwei Sun, Lingyun Shi, Feifei Wang, Rui Shi
  • Patent number: 11469357
    Abstract: A reflective composite material with a carrier consisting of aluminum with, on one side (A) of the carrier, an interlayer made of aluminum oxide, and with, above the interlayer, an optically active reflection-boosting multilayer system. In order to provide a high-reflectivity composite material of this kind which exhibits improved electrical connectivity when surface-mounting procedures are used, it is proposed that the thickness of the interlayer is in the range 5 nm to 200 nm, and that a layer of a metal or a metal alloy has been applied superficially on side (B) of the carrier that is opposite to the optically active reflection-boosting multilayer system, where the electrical resistivity at 25° C. of the metal or metal alloy is at most 1.2×10?1 ?mm2/m, where the thickness of the layer applied superficially is in the range 10 nm to 5.0 ?m.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: October 11, 2022
    Assignee: Alanod GmbH & Co. KG
    Inventor: Stefan Ziegler
  • Patent number: 11462666
    Abstract: A semiconductor light-emitting device includes a junction between doped semiconductor layers, a first set of multiple independent contacts connected to a first doped layer and a second set of one or more contacts connected to the second doped layer. Multiple conductive vias connect the independent contacts to the first doped layer, enabling differing corresponding via currents to be applied to the first doped layer through the vias independent of one another. A spatial distribution of via currents among the multiple vias can be selected to yield a corresponding spatial distribution of emission intensity. Alteration of the via current distribution results in corresponding alteration of the emission intensity distribution; such alterations can be implemented dynamically.
    Type: Grant
    Filed: May 15, 2020
    Date of Patent: October 4, 2022
    Assignee: Lumileds LLC
    Inventors: Toni Lopez, Floris Crompvoets
  • Patent number: 11462500
    Abstract: In one embodiment, an optoelectronic semiconductor device includes at least two lead frame parts and an optoelectronic semiconductor chip which is mounted in a mounting region on one of the lead frame parts. The lead frame parts are mechanically connected to one another via a casting body. The semiconductor chip is embedded in the cast body. In the mounting region the respective lead frame part has a reduced thickness. An electrical line is led over the cast body from the semiconductor chip to a connection region of the other of the lead frame parts. In the connection region, the respective lead frame part has the full thickness. From the connection region to the semiconductor chip the electrical line does not overcome any significant difference in height.
    Type: Grant
    Filed: January 23, 2019
    Date of Patent: October 4, 2022
    Assignee: OSRAM OLED GMBH
    Inventors: Matthias Hien, Matthias Goldbach, Michael Zitzlsperger, Ludwig Peyker
  • Patent number: 11456363
    Abstract: An indium phosphide crystal substrate has a diameter of 100-205 mm and a thickness of 300-800 ?m and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of sulfur is from 2.0×1018 to 8.0×1018 cm?3, the indium phosphide crystal substrate has an average dislocation density of 10-500 cm?2, and when am atomic concentration of tin is from 1.0×1018 to 4.0×1018 cm?3 or an atomic concentration of iron is from 5.0×1015 to 1.0×1017 cm?3, the indium phosphide crystal substrate has an average dislocation density of 500-5000 cm?2.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: September 27, 2022
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Muneyuki Nishioka, Kazuaki Konoike, Takuya Yanagisawa, Yasuaki Higuchi, Yoshiaki Hagi
  • Patent number: 11456276
    Abstract: A chip package structure is provided. The chip package structure includes a first substrate. The chip package structure includes a conductive via structure passing through the first substrate. The chip package structure includes a chip over a first surface of the first substrate. The chip package structure includes a barrier layer over a second surface of the first substrate. The chip package structure includes an insulating layer over the barrier layer. The chip package structure includes a conductive pad over the insulating layer and passing through the insulating layer and the barrier layer to connect with the conductive via structure. The chip package structure includes a conductive bump over the conductive pad.
    Type: Grant
    Filed: August 17, 2020
    Date of Patent: September 27, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ling-Wei Li, Jung-Hua Chang, Cheng-Lin Huang
  • Patent number: 11450648
    Abstract: A light emitting device package including a printed circuit board having a front surface and a rear surface, at least one light emitting device disposed on the front surface and emitting light in a direction toward the front surface, and a molding layer disposed on the printed circuit board and surrounding the light emitting device, in which the light emitting device includes a light emitting structure disposed on the printed circuit board, a substrate disposed on the light emitting structure, and a plurality of bump electrodes disposed between the light emitting structure and the printed circuit board, and the molding layer may cover an upper surface of the substrate and partially reflect, scatter, or absorb external light.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: September 20, 2022
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jong Min Jang, Chang Youn Kim
  • Patent number: 11444204
    Abstract: Techniques and mechanisms for improved performance characteristics of a transistor device. In an embodiment, a transistor of an integrated circuit comprises a source, a drain, a gate, a gate dielectric and a semiconductor structure which adjoins the gate dielectric. The semiconductor structure is configured to provide a conductive channel between the source and drain. The semiconductor structure includes first, second and third portions, the second portion between the source and the gate, and the third portion between the drain and the gate, wherein the first portion connects the second portion and third portion to one another. A thickness of the first portion is less than another thickness of one of the second portion or the third portion. In another embodiment, the locations of thicker portions of semiconductor structure mitigate overall transistor capacitance, while a thinner intermediary portion of the semiconductor structure promotes good sub-threshold swing characteristics.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: September 13, 2022
    Assignee: Intel Corporation
    Inventors: Abhishek A. Sharma, Van H. Le, Sean T. Ma, Jack Kavalieros, Benjamin Chu-Kung
  • Patent number: 11444224
    Abstract: A light-emitting semiconductor component may include a conversion layer, a radiation surface, and a plurality of adjacently arranged emission regions configured to be operated separately, individually and/or in groups. The conversion layer may be arranged downstream of the emission regions in the direction of radiation of the emission regions. The emission regions may be configured to emit primary radiation of a first wavelength range into the conversion layer. The conversion layer may be configured to convert at least a portion of the primary radiation into secondary radiation of a second wavelength range. Mixed radiation is configured to be emitted from the light-emitting semiconductor component at the radiation surface. The mixed radiation may include primary radiation and secondary radiation. A probability that primary radiation travelling from the emission region to the radiation surface is converted into secondary radiation may vary along the radiation surface by a maximum factor of 2.
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: September 13, 2022
    Assignee: OSRAM OLED GMBH
    Inventors: Ulrich Streppel, Hailing Cui, Desiree Queren, Dajana Durach
  • Patent number: 11444228
    Abstract: A light emitting device of one embodiment of the present disclosure includes: a substrate; a light emitting element disposed above the substrate, and having electrodes on respective upper surface and lower surface of the light emitting element; and a light shielding layer provided between the substrate and the light emitting element.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: September 13, 2022
    Assignee: SONY CORPORATION
    Inventors: Tatsuo Ohashi, Goshi Biwa, Akira Ohmae, Yusuke Kataoka