Abstract: Techniques are disclosed for using compositionally different contact materials for p-type and n-type source/drain regions on a common substrate. The different contact materials may be within a common source/drain contact trench, or in type-dedicated trenches. A given contact trench may span one or more fins and include one or more source/drain regions on which a corresponding contact structure is to be made. In an embodiment, an isolation structure between p-type and n-type fins is selective to the trench etch and therefore remains intact within the trench after the target source/drain regions have been exposed. In such cases, the isolation structure physically separates n-type source/drain regions from p-type source/drain regions. The contact structures on the different type source/drain regions may be shorted proximate the top of the isolation structure. Numerous material systems can be used for the channel and source/drain regions, including germanium, group III-V materials, and 2-D materials.

Abstract: A micro light-emitting diode transparent display including a transparent substrate is provided. N pixels are defined on the transparent substrate. N sets of micro light-emitting diodes are on the transparent substrate and respectively located in the N pixels. A wall portion is on the transparent substrate and surrounding one of the N sets of the micro light-emitting diodes to form an enclosed region on the transparent substrate. A length of a periphery of the enclosed region is equal to or smaller than 85% of a length of an outer periphery of one of the N pixels in which said one of the N sets of the micro light-emitting diodes is located. An area of said one of the N pixels outside the enclosed region allows light to directly pass through the micro light-emitting diode transparent display.

Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a metal interconnection. The two magnetic tunnel junction elements are arranged side by side at a first direction. The metal interconnection is disposed between the magnetic tunnel junction elements, wherein the metal interconnection includes a contact plug part having a long shape at a top view, and the long shape has a length at a second direction larger than a width at the first direction, wherein the second direction is orthogonal to the first direction.

Abstract: A semiconductor device includes a semiconductor substrate, a gate stack, an air spacer, a first spacer, a second spacer, a sacrificial layer, and a contact plug. The gate stack is on the semiconductor substrate. The air spacer is around the gate stack. The first spacer is around the air spacer. The second spacer is on the air spacer and the first spacer. The sacrificial layer is on the gate stack, and an etching selectivity between the second spacer and the sacrificial layer is in a range from about 10 to about 30. The contact plug lands on the second spacer and the gate stack.

Abstract: A light-emitting device includes a substrate, a first light-emitting chip, a first wavelength conversion member, and a barrier member. The first light-emitting chip is mounted on the substrate. The first wavelength conversion member covers the upper surface of the first light-emitting chip. A first reflective member covers the side surface of the first wavelength conversion member. Further, the barrier member includes an outer wall surrounding the side surfaces of the first light-emitting chip and the first reflective member.

Abstract: A display device includes a substrate; a plurality of light-emitting elements on the substrate; and a plurality of pixel circuits on the substrate, being configured to control the plurality of light-emitting elements in one-to-one correspondence. Each of the plurality of pixel circuits includes a thin film transistor. The thin film transistor includes a channel. The plurality of pixel circuits are disposed at different positions in a scanning direction of a pulse laser beam for annealing the channels. At least channels for light-emitting elements of the same color out of the channels are disposed at the same phase of irradiation cycles of the pulse laser beam in the scanning direction.

Abstract: A light-emitting device includes: a light-emitting element; a base including a first lead having an element disposal portion and a first wire bonding portion, a second lead having a second wire bonding portion and a fixing member; a frame provided on a upper surface of the base; an Ag plating layer covering an upper surface of the element disposal portion; an Au plating layer covering at least an upper surface of the first wire bonding portion and at least an upper surface of the second wire bonding portion; a first wire; and a second wire. The Ag plating layer is disposed apart inwardly from at least a part of an outer circumference of an end portion of the element disposal portion, and the frame body is provided at a position that the frame body covers the Ag plating layer, the first wire bonding portion, and the second wire bonding portion.

Abstract: A light-emitting device has a light-emitting element including first and a second semiconductor light-emitting structures, each having a first and a second electrode, and a substrate supporting the light-emitting element. The substrate has an interconnection layer having a first interconnection portion comprising a first land, a second interconnection portion comprising second and third lands, and a third interconnection portion comprising a fourth land, and a first reflective member covering a portion of the interconnection layer. A portion of the first land is coupled to the first electrode of the first semiconductor light-emitting structure. A portion of the second land and a portion of the third land are coupled to the second electrode of the first semiconductor light-emitting structure and the first electrode of the second semiconductor light-emitting structure, respectively. A portion of the fourth land is coupled to the second electrode of the second semiconductor light-emitting structure.

Abstract: An image sensor includes a substrate material. The substrate material includes a plurality of photodiodes disposed therein. The plurality of photodiodes includes a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) larger than the SPDs. An array of color filters is disposed over the substrate material. A buffer layer is disposed between the substrate material and the array of color filters. A metal pattern is disposed between the color filters in the array of color filters, and between the array of color filters and the buffer layer. An attenuation layer is disposed between the substrate material and the array of color filters. The attenuation layer is above and aligned with the plurality of SPDs and a portion of each of the plurality of LPDs. An edge of the attenuation layer is over one of the plurality of LPDs.

Abstract: A semiconductor device includes: a trench formed in a surface of a semiconductor substrate and extending lengthwise in a direction parallel to the surface; a body region adjoining the trench; a source region adjoining the trench above the body region; a drift region adjoining the trench below the body region; a field electrode in a lower part of the trench and separated from the substrate; and a gate electrode in an upper part of the trench and separated from the substrate and the field electrode. A first section of the field electrode is buried below the gate electrode in the trench. A second section of the field electrode transitions upward from the first section in a direction toward the surface. The separation between the second section and the gate electrode is greater than or equal to the separation between the first section and the gate electrode.

Abstract: A semiconductor package including at least one integrated circuit component and a glue material is provided. The at least one integrated circuit component has a top surface with conductive terminals and a backside surface opposite to the top surface. The glue material encapsulates the at least one integrated circuit component, wherein a first lateral thickness of the glue material is smaller than a second lateral thickness of the glue material, the second lateral thickness is parallel to the first lateral thickness, and the first lateral thickness is substantially coplanar with the top surface.

Abstract: A light emitting device package according to an embodiment has a first frame and a second frame arranged to be spaced apart from each other, a third frame arranged between the first frame and the second frame and spaced apart from the first frame and the second frame, a body supporting the first to third frames, a first light emitting device arranged on the body and electrically connected to the first frame and the third frame, and a second light emitting device arranged on the body and electrically connected to the second frame and the third frame. The body has a first recess in an upper area between the first frame and the third frame, and a second recess in an upper area between the third frame and the second frame. An embodiment may have a first resin part arranged in the first recess, and a second resin part arranged in the second recess.

Abstract: An optoelectronic device including a first optoelectronic circuit bonded to a second electronic circuit. The second electronic circuit includes conductive pads. The first optoelectronic circuit includes, for each pixel: at least first and second three-dimensional semiconductor elements extending over a first conductive layer and having the same height; first active areas resting on the first semiconductor elements and capable of emitting or receiving a first electromagnetic radiation; second active areas resting on the second semiconductor elements and capable of emitting or receiving a second electromagnetic radiation; and second, third, and fourth conductive layers electrically coupled to the conductive pads, the second, third, and fourth conductive layers being respectively coupled to the first active areas, to the second active areas, and to the first conductive layer.

Abstract: A method of manufacturing a component carrier includes: i) forming a stack having at least one electrically conductive layer structure and/or at least one electrically insulating layer structure, with at least one cavity formed in the stack, ii) forming a cluster by encapsulating a first electronic component and a second electronic component in a common encapsulant, and thereafter iii) placing the cluster in the common encapsulant at least partially into the cavity and v) embedding the cluster in the cavity.

Abstract: A light-emitting device includes: a base body comprising a resin member, a first lead, and a second lead, wherein the first lead and the second lead are supported by the resin member; a light-emitting element mounted on an upper surface of the base body; a resin frame located on the upper surface of the base body, surrounding the light-emitting element; and a first resin located inside the resin frame to cover a part of side surfaces of the light-emitting element, a part of an inner side surface of the resin frame, and the upper surface of the base body, wherein the first resin includes: a reflection material layer that contains a reflection material, and a resin layer that is located on an upper surface of the reflective material layer and does not contain the reflective material.

Abstract: Methods for forming an integrated circuit are provided. Aspects include providing a wafer substrate having an embedded memory area interconnect structure and an embedded non-memory area interconnect structure, the memory area interconnect structure comprising metal interconnects formed within a first interlayer dielectric, recessing a portion of the memory area interconnect structure, forming a bottom electrode contact on the recessed portion of the memory area interconnect structure, forming a bottom electrode over the bottom electrode contact, forming a protective dielectric layer over the non-memory area interconnect structure, and forming memory element stack layers on a portion of the bottom electrode.

Abstract: A micro light-emitting device module includes a circuit substrate, a planarization layer and a micro light-emitting device. The planarization layer is disposed on an upper surface of the circuit substrate and has a first surface and a second surface opposite to each other. The second surface is in contact with the upper surface of the circuit substrate. The micro light-emitting device is disposed on the first surface of the planarization layer. A maximum height difference of the second surface of the planarization layer is greater than a thickness of the micro light-emitting device.

Abstract: There is provided a display substrate, a manufacturing method thereof, and a display device, relating to the field of display technology. The display substrate includes: a base substrate; a self-luminescent layer disposed on a side of the base substrate; and an encapsulation film layer disposed on a side of the self-luminescent layer away from the base substrate. The display substrate has a gap, which penetrates through the self-luminescent layer and the encapsulation film layer, and separates the self-luminescent layer and the encapsulation film layer into at least two parts with a part corresponding to a to-be-perforated area of the display substrate and another part corresponds to a non-perforated area of the display substrate other than the to-be-perforated area. The edge of the encapsulation film layer adjacent to the gap covers the side surface of the edge of the self-luminescent layer adjacent to the gap.

Abstract: A microelectromechanical (MEMS) system may comprise multiple sensors within cavities of the MEMS system. The operation of different sensors requires different pressures within the respective cavities. A first cavity may be sealed at a first pressure. A through-hole may be etched into a cap layer of the MEMS system to introduce gas into a second cavity such that the cavity has a desired pressure. The cavity may then be sealed by a MEMS valve to maintain the desired pressure in the second cavity.

Abstract: A light emitting device includes: a plurality of light emitting elements; a plurality of light transmissive members, each located on an upper surface of a respective one of the light emitting element; a mounting board on which the light emitting elements are disposed; a first cover member located on or above the mounting board, the first cover member comprising: a first reflective material containing layer disposed between the light emitting elements and containing a first reflective material, and a light transmissive layer disposed between the light transmissive members; and a second cover member disposed around the light emitting elements and comprising a second reflective material.