Patents Examined by Felisa Hiteshew
  • Patent number: 7427327
    Abstract: A silica glass crucible includes a thin barium-doped inner layer, a stable, bubble-free intermediate layer, and a stable opaque outer layer. The fusion process of the present invention controls the dynamic gas balance at the fusion front where formed grain is melted to dense fused silica. The crucible demonstrates reduced bubble growth during a Czochralski process. As a result of the thin barium-doped layer and the reduced bubble growth, the inner surface of the crucible is uniformly minimally textured during a CZ process. The present crucible is especially suited for intense CZ processes for manufacturing silicon ingots used for solar cells or with silicon that is heavily doped with antimony, boron, or arsenic.
    Type: Grant
    Filed: September 28, 2006
    Date of Patent: September 23, 2008
    Assignee: Heraeus Shin-Etsu America, Inc.
    Inventors: Katsuhiko Kemmochi, Yasuo Ohama
  • Patent number: 7416709
    Abstract: A method is provided that comprises having a trial generation station generate crystallization trials in a crystallization plate transporting the crystallization plate to an imaging station; and having the imaging station take images of the crystallization trials within 30 minutes of the formation of the crystallization trials; wherein the method is performed in a single automated system.
    Type: Grant
    Filed: December 16, 2004
    Date of Patent: August 26, 2008
    Assignee: Takeda San Diego, Inc.
    Inventors: Laurent Martin, John W. Palan
  • Patent number: 7416710
    Abstract: A crystallization system is provided that comprises a screen replicator having a transfer mechanism configured to transfer portions of different screen solutions contained in a screen storage plate to well regions of a crystallization plate; a screen storage station including a housing configured to store a plurality of screen storage plates and mechanics for retrieving a selected screen storage plate from among the plurality of screen storage plates for transport to the screen replicator; a transport mechanism configured to transport a screen storage plate retrieved by the screen storage station to the screen replicator; and a controller including logic for causing the screen storage station to retrieve the selected screen storage plate from among the plurality of screen storage plates, logic for causing the transport mechanism to transport the selected screen storage plate from the screen storage station to the screen replicator, and logic for causing the screen replicator to transfer portions of different
    Type: Grant
    Filed: December 1, 2004
    Date of Patent: August 26, 2008
    Assignee: Takeda San Diego, Inc.
    Inventors: Laurent Martin, John W. Palan
  • Patent number: 7416603
    Abstract: Disclosed is a method of growing a single crystal from a melt contained in a crucible. The method includes the step of making the temperature of a melt increase gradually to a maximum point and then decrease gradually along the axis parallel to the lengthwise direction of the single crystal from the interface of the single crystal and the melt to the bottom of the crucible. The increasing temperature of the melt is kept to preferably have a greater temperature gradient than the decreasing temperature thereof. Preferably, the axis is set to pass through the center of the single crystal. Preferably, the convection of the inner region of the melt is made smaller than that of the outer region thereof.
    Type: Grant
    Filed: October 19, 2005
    Date of Patent: August 26, 2008
    Assignee: Siltron Inc.
    Inventor: Hyon-Jong Cho
  • Patent number: 7413606
    Abstract: It is aimed at providing a fluoride crystal growing method capable of controlling a shape of the crystal by a micro-pulling-down method. Fluoride crystals in shapes depending on purposes, respectively, can be grown by adopting carbon, platinum, and iridium as crucible materials adaptable to fluorides, respectively, and by designing shapes of the crucibles taking account of wettabilities of the materials with the fluorides, respectively.
    Type: Grant
    Filed: July 20, 2004
    Date of Patent: August 19, 2008
    Assignees: Stella Chemifa Corporation, Fukuda Crystal Laboratory
    Inventors: Tomohiko Satonaga, Hirohisa Kikuyama, Tsuguo Fukuda
  • Patent number: 7413608
    Abstract: A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.
    Type: Grant
    Filed: September 13, 2005
    Date of Patent: August 19, 2008
    Assignee: Advanced LCD Technologies Development Center Co., Ltd.
    Inventors: Yukio Taniguchi, Masakiyo Matsumura, Hirotaka Yamaguchi, Mikihiko Nishitani, Susumu Tsujikawa, Yoshinobu Kimura, Masayuki Jyumonji
  • Patent number: 7413605
    Abstract: By pulling up an ingot in consideration of deformation of a crucible, generation of the defective ingot is prevented and a plurality of ingots having equivalent quality with the first ingot are pulled up in a multiple pull-up. Firstly, a deformation amount of a crucible for experiment (34) upon melting a silicon raw material and a history of supply power to a heater for experiment (38) are measured to calculate deformation tendency of a crucible for mass production (14). Next, the size of the crucible for mass production is measured, the silicon raw material of the amount equivalent to the amount supplied to the crucible for experiment is melted with a heater for mass production (18), and an initial crucible external position with a predetermined gap (X) is measured before initiating pull-up.
    Type: Grant
    Filed: October 27, 2006
    Date of Patent: August 19, 2008
    Assignee: Sumco Corporation
    Inventor: Jun Furukawa
  • Patent number: 7404856
    Abstract: The present invention relates to a process for forming single crystal silicon ingots or wafers that contain an axially symmetric region in which vacancies are the predominant intrinsic point defect, that are substantially free of oxidation induced stacking faults, and are nitrogen doped to stabilize oxygen precipitation nuclei therein.
    Type: Grant
    Filed: January 15, 2007
    Date of Patent: July 29, 2008
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Hiroyo Haga, Takaaki Aoshima, Mohsen Banan
  • Patent number: 7396408
    Abstract: This invention relates to a method for the production of diamond films with low misorientation through the deposition of diamond on a film system, whereby the film system exhibits a substrate film made of monocrystalline silicon or silicon carbide, at least one buffer film arranged on that, and at least one metal film made of a refractory metal arranged on that, whereby the diamond is deposited on the at least one metal film.
    Type: Grant
    Filed: May 3, 2004
    Date of Patent: July 8, 2008
    Assignee: Universität Augsburg
    Inventors: Matthias Schreck, Stefan Gsell, Bernd Stritzker
  • Patent number: 7383696
    Abstract: A silica glass crucible includes a stable, bubble-free inner layer and an opaque outer layer, both layers demonstrating reduced bubble growth during a Czochralski process. When used in the CZ process, little volume change is observed in the crucible wall, and the crucible has little influence on melt level. The present crucible is especially suited for slow silicon ingot pulling with reduced crystalline defects. The fusion process of the present invention controls the dynamic gas balance at the fusion front where formed grain is melted to dense fused silica.
    Type: Grant
    Filed: September 8, 2005
    Date of Patent: June 10, 2008
    Assignee: Heraeus Shin-Etsu America, Inc.
    Inventors: Katsuhiko Kemmochi, Robert Mosier, Yasuo Ohama
  • Patent number: 7377977
    Abstract: A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber toward the substrate, the reactive gases comprising components that are able to bond to each other to form the crystal, and flowing buffer gas in the reactor chamber between the reactive gases and a wall of the reactor, where the flowing buffer gas inhibits at least one of a first material at least one of in and produced by the reactive gases from reaching the reactor wall and a second material produced by the reactor wall from reaching the reactive gases in the reactor chamber before the reactive gases reach the substrate.
    Type: Grant
    Filed: May 30, 2006
    Date of Patent: May 27, 2008
    Assignee: Cape Simulations, Inc.
    Inventors: Shariar Motakef, Aniruddha S. Worlikar
  • Patent number: 7374817
    Abstract: Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in suspended form in an atmosphere containing a Group IVb, Vb or VI transition metal element, such as Nb, Ta, Zr, Ti, Hf or W, together with the chalcogen element. Then, micro-whiskers of a transition metal chalcogenide formed in the atmosphere are attached onto a surface of the chalcogen-element micro-droplet by the action of a surface tension of the micro-droplet, and grown as a loop-shaped crystal wound around the surface of the micro-droplet to obtain a loop-shaped crystal having a twist of 0, ? or 2?. The crystal has a ribbon-like open or closed loop configuration. The transition-metal chalcogenide crystal with the topological loop-shaped microstructure can exhibit original properties peculiar to each transition-metal chalcogenide, and has applicability, for example, to a quantum device, such as SQUID.
    Type: Grant
    Filed: May 20, 2003
    Date of Patent: May 20, 2008
    Assignee: Japan Science and Technology Agency
    Inventors: Satoshi Tanda, Taku Tsuneta, Yoshitoshi Okajima, Katsuhiko Inagaki, Kazuhiko Yamaya, Noriyuki Hatakenaka
  • Patent number: 7371282
    Abstract: A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.
    Type: Grant
    Filed: July 12, 2006
    Date of Patent: May 13, 2008
    Assignee: Northrop Grumman Corporation
    Inventors: Narsingh Bahadur Singh, Brian Wagner, Mike Aumer, Darren Thomson, David Kahler, Andre Berghmans, David J. Knuteson
  • Patent number: 7371283
    Abstract: Disclosed is a metod of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(?Tmax??Tmin)/?Tmin}×100?10, wherein ?Tmax is a maximum axial temperature gradient of the silicon melt and ?Tmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal.
    Type: Grant
    Filed: November 22, 2005
    Date of Patent: May 13, 2008
    Assignee: Siltron Inc.
    Inventor: Hyon-Jong Cho
  • Patent number: 7368011
    Abstract: The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the crucible in a vertical direction; and a control device for controlling a pulling rate for the silicon single crystal by the pulling-up device, based on the detected position of the crucible.
    Type: Grant
    Filed: July 29, 2005
    Date of Patent: May 6, 2008
    Assignee: Sumitomo Mitsubishi Silicon Corporation
    Inventors: Youji Suzuki, Satoshi Sato
  • Patent number: 7368015
    Abstract: An apparatus including a crucible, an energy source, and a controller is provided. The crucible may be sealed to a nitrogen-containing gas, and may be chemically inert to at least ammonia at a temperature in a range of about 400 degrees Celsius to about 2500 degrees Celsius. The energy source may supply thermal energy to the crucible. The controller may control the energy source to selectively direct sufficient thermal energy to a predefined first volume within the crucible to attain and maintain a temperature in the first volume to be in a range of from about 400 degrees Celsius to about 2500 degrees Celsius. The thermal energy may be sufficient to initiate, sustain, or both initiate and sustain growth of a crystal in the first volume. The first temperature in the first volume may be controllable separately from a second temperature in another volume within the crucible. The first temperature and the second temperature differ from each other. Associated methods are provided.
    Type: Grant
    Filed: October 13, 2005
    Date of Patent: May 6, 2008
    Assignee: Momentive Performance Materials Inc.
    Inventors: Mark Philip D'Evelyn, Dong-Sil Park, Victor Lienkong Lou, Thomas Francis McNulty, Huicong Hong
  • Patent number: 7364617
    Abstract: A silicon carbide seeded sublimation method is disclosed. The method includes the steps of nucleating growth on a seed crystal growth face that is between about 1° and 10° off-axis from the (0001) plane of the seed crystal while establishing a thermal gradient between the seed crystal and a source composition that is substantially perpendicular to the basal plane of the off-axis crystal.
    Type: Grant
    Filed: February 5, 2007
    Date of Patent: April 29, 2008
    Assignee: Cree, Inc.
    Inventors: Stephan Mueller, Adrian Powell, Valeri F. Tsvetkov
  • Patent number: 7364619
    Abstract: The invention relates to new improvements in a process for crystal growth in the environment of supercritical ammonia-containing solution, which are based on use of specific azide mineralizers and result in the improved bulk Group XIII element nitride monocrystals, in particular balk monocrystalline gallium-containing nitride, intended mainly for variety of nitride-based semiconductor products such as various opto-electronic devices. The invention further relates to a mineralizer used for supercritical ammonia-containing solution which comprises at least one compound selected from the group consisting of LiN3, NaN3, KN3, and CsN3.
    Type: Grant
    Filed: April 17, 2003
    Date of Patent: April 29, 2008
    Assignees: Ammono. Sp. zo.o., Nichia Corporation
    Inventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek P. Sierzputowski, Yasuo Kanbara
  • Patent number: 7364618
    Abstract: This silicon wafer is obtained from a silicon single crystal grown by the CZ method in a hydrogen-containing inert gas atmosphere, and is a completely grown-in defect-free wafer containing no COPs or dislocation clusters throughout the wafer in the thickness and radial directions thereof, and all the portions consist essentially of an interstitial rich region. This method for growing silicon single crystals includes pulling a silicon single crystal in a hydrogen-containing inert gas atmosphere so as to expand the range of the pull rate for the PI region, wherein the pulling of the silicon single crystal is conducted at a pull rate within this expanded range of the pull rate for the PI region so as to grow a body portion that is an interstitial rich region.
    Type: Grant
    Filed: August 24, 2005
    Date of Patent: April 29, 2008
    Assignee: Sumco Corporation
    Inventors: Masataka Hourai, Wataru Sugimura, Toshiaki Ono
  • Patent number: 7361223
    Abstract: A method for eliminating a display defect in a liquid crystal display device includes disposing a liquid crystal panel adhered with a polarizer into a first buffer chamber, increasing pressure of the first buffer chamber, communicating the first buffer chamber with a reactor chamber having a predetermined pressure, transferring the liquid crystal panel from the first buffer chamber to the reactor chamber, increasing pressure of a second buffer chamber, communicating the second buffer chamber with the reactor chamber, and transferring the liquid crystal panel from the reactor chamber to the second buffer chamber.
    Type: Grant
    Filed: July 27, 2005
    Date of Patent: April 22, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-Hee Her, Tai-Huem Om, Jin-Whal Kim, Min-Young Won, Kun-Jong Lee