Abstract: Composite particles of a semiconductor particle such as a metal chalcogenide within a crosslinked, cored dendrimer are described. Additionally, methods of making the composite particles and compositions that contain the composite particles are described.

Abstract: A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a cylindrical shape; passing the raw material gas through a clearance between the seed crystal and an inner wall of the gas flow control member; and flowing a part of the raw material gas to bypass the seed crystal. The method provides the single crystal having good quality.

Abstract: There is disclosed a single crystal obtained by a single crystal pulling method, wherein an interval of striations incorporated into the single crystal due to temperature fluctuation of crystal melt at the time of crystal growth is controlled, and a method of growing a single crystal according to a single crystal pulling method, wherein a growth rate and/or a temperature fluctuation period are controlled so that V×F/sin ? may be in a certain range when a growth rate at the time of growing a single crystal is defined as V (mm/min), a temperature fluctuation period of crystal melt is defined as F (min), and an angle to the level surface of a crystal-growth interface is defined as ?.

Abstract: A method for growing a ?-Ga2O3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a GazO3 light-emitting device capable of emitting a light in the ultraviolet region, and its manufacturing method are disclosed. In an infrared-heating single crystal manufacturing system, a seed crystal and polycrystalline material are rotated in mutually opposite directions and heated, and a ?-Ga2O3 single crystal is grown in one direction selected from among the a-axis <100> direction, the b-axis <010> direction, and the c-axis <001> direction. A thin film of a ?-Ga2O3 single crystal is formed by PLD. A laser beam is applied to a target to excite atoms constituting the target Ga atoms are released from the target by thermal and photochemical actions. The free Ga atoms are bonded to radicals in the atmosphere in the chamber.

Abstract: There is provided a method of manufacturing a nano-wire using a crystal structure. In the method of manufacturing a nano-wire, a crystal grain having a plurality of crystal faces is used as a seed, and a crystal growing material having a lattice constant difference within a predetermined range is deposited on the crystal grain, thereby allowing the nano-wire to grow from at least one of the crystal faces. Therefore, it is possible to give the positional selectivity with a simple process using a principle of crystal growth and to generate a nano-structure such as a nano-wire, etc. having good crystallinity. Further, it is possible to generate a different-kind junction structure having various shapes by adjusting a feature of a crystal used as a seed.

Abstract: A method for crystallizing silicon is provided. The method includes: forming an amorphous silicon layer on a substrate; aligning a mask above the substrate, the mask being divided into a plurality of blocks, each block having at least two transmission patterns, the transmission patterns of one block and the transmission patterns of another adjacent block being complimentary with each other and the mask including at least two diffraction patterns disposed between the transmission patterns; forming a first crystallization region on the amorphous silicon layer by irradiating a laser beam through the transmission patterns of the mask; and displacing the substrate or the mask by a predetermined distance and irradiating a laser beam onto the substrate to recrystallize the crystallization region using the laser beam that passes through the diffraction patterns, and forming a second crystallization region using the laser beam that passes through the transmission patterns.

Abstract: A method for forming, by epitaxy, a heteroatomic single-crystal semiconductor layer on a single-crystal semiconductor wafer, the crystal lattices of the layer and of the wafer being different, including forming, before the epitaxy, in the wafer surface, at least one ring of discontinuities around a useful region.

Abstract: The invention includes atomic layer deposition methods and chemical vapor deposition methods. In a particular aspect of the invention, a source of microwave radiation is provided proximate a reaction chamber. At least a fragment of a precursor material is chemisorbed on a substrate within the reaction chamber while not exposing the precursor material to microwave radiation from the source. Excess precursor material is removed from the chamber, and the chemisorbed material is subsequently exposed to microwave radiation from the source within the reaction chamber.

Abstract: The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5×1.013×105 Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH3 and N2.

Abstract: A method and system for forming a variable thickness seed layer on a substrate for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of the electroplated metal layer compared to when using a constant thickness seed layer. The method includes providing a substrate in a process chamber containing a showerhead, with the center of the substrate generally aligned with an inner gas delivery zone of the showerhead and the edge of the substrate generally aligned with an outer gas delivery zone of the showerhead. The method further includes depositing a seed layer on the substrate by exposing the substrate to a first gas containing a metal-containing precursor flowed through the inner gas delivery zone, and exposing the substrate to a second gas flowed through the outer gas delivery zone, whereby the seed layer is deposited with a thickness at the edge of the substrate that is less than the thickness at the center of the substrate.

Abstract: The present invention provides nanowires which are substantially straight and substantially free of nanoparticles and methods for making the same The nanowires can be made by seeded approaches, wherein nanocrystals bound to a substrate are used to promote growth of the nanowire. Nanocrystals in solution may also be used to make the nanowires of the present invention. Supercritical fluid reaction conditions can be used in a continuous or semi-batch process.

Abstract: A method and apparatus for combining raw fibrous and binding materials in a single mixing step (Step S3), followed by consolidation (Step S5) so as to greatly shorten the overall cycle time to a finished fiber-reinforced composite part. Chopped fibrous materials and binder materials are deposited sequentially onto a belt conveyor (Step S2) so that the materials are successively layered, one on top of each other in a predetermined ratio, and subsequently mixed (Step S3) to achieve uniform dispersion throughout. The mixed materials are then deposited into a rotating mold (Step S4) to further ensure uniform dispersion of fibrous and binder materials. Impregnation of the fibrous materials with the binder material occur in-situ as the uniformly mixed materials are heated and subsequently compacted in the mold (Step S5) to obtain the desired shape of the fiber-reinforced composite part.

Abstract: A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a reactor chamber; positioning crystal nutrient material in the nutrient zone of the chamber; filling the reactor with a solvent fluid; heating and pressuring the chamber until at least a portion of the nutrient material dissolves in the solvent and the solvent becomes supercritical in the nutrient zone; transporting supercritical from the nutrient zone to the growth zone, and growing the seed crystals as nutrients from the supercritical fluid deposit on the crystals.

Abstract: A method of which includes the steps of introducing an acidic solution containing (V), copper, ferric iron and ferrous iron into a first tank of a series of continuously stirred tank reactors and, in the first tank, adding air to the solution; heating the solution to an elevated temperature; recycling a portion of selectively precipitated ferric arsenate compounds to the said first tank; and seeding the solution with ferric arsenate compounds.

Abstract: A vapor-phase growth apparatus including a reaction furnace, a wafer container disposed in said furnace, a gas supply member, and a heating member, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying a source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container includes a heat flow control section having a space for disposing a wafer; and a heat flow transmitting section joined to the heat flow control section. The contact heat resistance Rg between the heat flow control section and the heat flow transmitting section is not less than 1.0×10?6 m2K/W to not more than 5.0×10?3 m2K/W. The heat flow control section is made of a material having a coefficient of thermal conductivity 5 to 20 times that of the wafer.

Abstract: The invention provides an improved mixer section for a screw for a molding machine. The improved mixer section includes at least one conveying flight and at least one spill flight intersecting with the conveying flight. At least one notch is formed in the conveying flight to enable mixing between adjacent flow channels. The spill flight terminates near the output of the mixer to create a trap zone for any unmelts that reach that area of the mixer.

Abstract: A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride semiconductor on a substrate; a step (b) for forming a nitride semiconductor island structure having a plurality of facets inclined relative to a surface of the substrate using the fine crystal particles as nuclei; and a step (c) for causing the nitride semiconductor island structure to grow in a direction parallel with a surface of the substrate to merge a plurality of the nitride semiconductor island structures with each other, thereby forming a nitride semiconductor crystal layer having a flat surface; the steps (a)-(c) being continuously conducted in the same growing apparatus.

Abstract: To precisely predict the distribution of densities and sizes of void defects comprising voids and inner wall oxide membranes in a single crystal. The computer-based simulation determines, at steps 1 to 7, the distribution of temperatures within a single crystal 14 growing from a melt 12 from the time of its pulling-up to the time of its completing cooling with due consideration paid to convection currents in the melt 12. The computer-based simulation, at steps 8 to 15, determines the density of voids considering the cooling process of the single crystal separated from the melt, that is, the pulling-up speed of the single crystal after the separation from the melt, and reflecting the effect of slow and rapid cooling of the single crystal in the result, and relates the radius of voids with the thickness of inner wall oxide membrane developed around the voids.

Abstract: A method of forming crystalline or polycrystalline layers includes providing a substrate and a patterning over the substrate. The method also includes providing nucleation material and forming the crystalline layer over the nucleation material. The crystalline material disposed over the substrate may be monocrystalline or polycrystalline.

Abstract: An intimate fit preform cooling tube with an inner mating surface that includes a polymeric coating to increase its lubricity and thereby reduce friction with a preform to be engaged therewith. The cooling tube of the present invention substantially reduces or eliminates preform ovality and gate stretching problems.