Abstract: The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

Abstract: A manufacturing method that enables an electrode to be formed on a specific portion of a surface of a sintered ceramic body by a simple technique. A method of manufacturing a ceramic electronic component includes preparing a sintered ceramic body that contains a metal oxide, and forming low-resistance portions that is formed by reducing the resistance of portions of the ceramic body by radiating laser onto electrode-formation regions of surfaces of the ceramic body. The method further includes causing a catalytic metal to selectively adhere to the low-resistance portions by immersing the ceramic body, in which the low-resistance portions have been formed, in a catalytic metal substitution treatment solution, and forming a plating layer that serves as an electrode onto the low-resistance portions by performing electroless plating on the ceramic body to which the catalytic metal has adhered.

Abstract: The present disclosure provides a holding arrangement. The holding arrangement for holding a substrate includes: a body portion having a first side; a dry adhesive material provided on the first side of the body portion; a seal surrounding the dry adhesive material and configured to provide a vacuum region on the first side, wherein the dry adhesive material is provided in the vacuum region; and a conduit to evacuate the vacuum region.

Abstract: A substrate processing apparatus includes a conductive enclosure having a gas passage, a conductive member having a gas passage, and a piping assembly including a hollow tube having an inner sidewall, a core block disposed in the hollow tube, the core block having an outer sidewall fitting the inner sidewall of the hollow tube, the core block having a first dielectric constant, and at least one dielectric member disposed in at least one of the hollow tube and the core block, the dielectric member having a second dielectric constant higher than the first dielectric constant.

Abstract: A pattern forming method capable of easily removing a discontinuous portion in a pattern while keeping resistance of the pattern low. A pattern forming method including at least a printing step of printing a pattern intermediate containing a conductive material on a base material 1, and a plating step of subjecting the pattern intermediate to an electroplating treatment, in which the pattern intermediate printed in the printing step has a plating target portion that is energized in the plating step and a discontinuous portion that is discontinuously formed from the plating target portion and is not energized in the plating step, and in the plating step, by performing an electric field plating treatment using a plating solution containing at least two or more types of metal salts containing different types of metals and a complexing agent, the discontinuous portion of the pattern intermediate is removed to form a pattern constituted by the plating target portion covered with a plating film.

Abstract: A substrate processing apparatus includes a reaction chamber including an inlet through which a reaction gas is supplied and an outlet through which residue gas is exhausted; a plurality of ionizers located at a front end of the inlet and configured to ionize the reaction gas supplied through the inlet; and a heater configured to heat the reaction chamber. The plurality of ionizers include a first ionizer configured to ionize the reaction gas positively; and a second ionizer configured to ionize the reaction gas negatively.

Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor; introducing into the reactor at least one silicon-containing compound and at least one multifunctional organoamine compound to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon carbonitride coating has excellent mechanical properties.

Abstract: Methods for selectively depositing on non-metallic surfaces are disclosed. Some embodiments of the disclosure utilize an unsaturated hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked non-metallic surfaces. Some embodiments of the disclosure relate to methods of forming metallic vias with decreased resistance.

Abstract: According to one embodiment, a processing liquid generator capable of improving the reliability of the concentration of generated processing liquid is provided.

Abstract: A system includes an electrode. The electrode includes a showerhead having a first stem portion and a head portion. A plurality of dielectric layers is vertically stacked between the electrode and a first surface of a conducting structure. The plurality of dielectric layers includes M dielectric layers arranged adjacent to the head portion and P dielectric portions arranged around the first stem portion. The plurality of dielectric layers defines a first gap between the electrode and one of the plurality of dielectric layers, a second gap between adjacent ones of the plurality of dielectric layers, and a third gap between a last one of the plurality of dielectric layers and the first surface. A number of the plurality of dielectric layers and sizes of the first gap, the second gap, and the third gap are selected to prevent parasitic plasma between the first surface and the electrode.

Abstract: Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures. The process chamber includes a liner assembly located in a first side of a chamber body and two pumping ports located in a substrate support portion adjacent a second side of the chamber body opposite the first side. The liner assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the process chamber. The liner assembly may be fabricated from quartz minimize interaction with process gases, such as radicals. The liner assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux. The two pumping ports can be individually controlled to tune the flow of the radicals through the processing region of the process chamber.

Abstract: Embodiments are described herein to reshape spacer profiles to improve spacer uniformity and thereby improve etch uniformity during pattern transfer associated with self-aligned multiple-patterning (SAMP) processes. For disclosed embodiments, cores are formed on a material layer for a substrate of a microelectronic workpiece. A spacer material layer is then formed over the cores. Symmetric spacers are then formed adjacent the cores by reshaping the spacer material layer using one or more directional deposition processes to deposit additional spacer material and using one or more etch process steps. For one example embodiment, one or more oblique physical vapor deposition (PVD) processes are used to deposit the additional spacer material for the spacer profile reshaping. This reshaping of the spacer profiles allows for symmetric spacers to be formed thereby improving etch uniformity during subsequent pattern transfer processes.

Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.

Abstract: A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.

Abstract: Provided is a filter device including a plurality of coils, a plural of capacitors, and a frame. The coils constitute a plurality of coil groups. Each coil group includes two or more coils. The two or more coils in each coil group are provided such that respective windings of the two or more coils extend spirally about a central axis and respective turns of the two or more coils are sequentially and repeatedly arranged in an axial direction in which the central axis extends. The coil groups are provided coaxially with the central axis. A pitch between the respective turns of the two or more coils of any one coil group among the coil groups is larger than a pitch between the respective turns of the two or more coils of the coil group provided inside the one coil group among the coil groups.

Abstract: In accordance with an exemplary embodiment, a substrate processing apparatus includes: a tube assembly having an inner space in which substrates are processed and assembled by laminating a plurality of laminates, each of which includes an injection part and an exhaust hole; a substrate holder configured to support the plurality of substrates in a multistage manner in the inner space; a supply line connected to one injection part of the plurality of laminates to supply a process gas; and an exhaust line connected to one of a plurality of exhaust holes to exhaust the process gas, and the substrate processing apparatus that has a simple structure and induces a laminar flow of the process gas to uniformly supply the process gas to a top surface of the substrate.

Abstract: A method of fabricating a glassy carbon film is described. The method includes forming a soluble layer on a substrate, forming a lift-off stack that includes a lift-off mask layer and a hard-mask layer, and forming a pattern in the lift-off stack to expose a portion of the soluble layer. The exposed portions of the soluble layer are removed to expose a portion of the substrate. A carbon material is over the exposed portion of the substrate. The soluble layer is dissolved in a solvent, and the lift-off stack is lifted-off.

Abstract: The invention relates to a method for pulsed laser deposition including the steps of: providing a target and a substrate facing the target; irradiating a spot on the target with a pulsed laser beam to generate a plasma plume of target material and depositing the plasma plume on the substrate; and smoothing the surface structure of the spot on the target prior to irradiating the spot with a pulsed laser beam.

Abstract: An apparatus comprises a chamber configured to receive a medium. The chamber comprises a first cooled structure having a first surface and a second cooled structure having a first surface. The first surface of the first cooled structure faces the first surface of the second cooled structure and is positioned a predetermined distance therefrom to form a gap, and the gap is configured to receive the medium. The chamber further includes a first gas inlet positioned proximate the center of the first cooled structure, a first slidable structure configured to seal a first side of the chamber when in a closed position, and a second slidable structure, positioned opposite the first slidable structure, and configured to seal a second side of the chamber when in a closed position.

Abstract: A process for production of a multilayer electronic component having an element body wherein a functional part and a conductor part are laminated, using an ejection device wherein ink is electrically charged at an ejection part by applying a voltage and the electrically charged ink is ejected from the ejection part by an electrostatic attraction force, and including a first step of forming a green functional part by using a first ink including a functional particle as the ink, a second step of forming a green conductor part by using a second ink including a conductive particle as the ink, a step of forming a green multilayer body by repeating the first step and the second step, and a step of treating the green multilayer body to obtain the element body.