Abstract: In an evaporative cooler having a casing, a multilayer type contact body and means for supplying water to selected channels in the contact body, the top edges of the contact body are formed to define outwardly widened openings communicating with only selected channels in the body. The water supply means supplies water to only some of the openings so that alternating channels on the contact body are passed with both water and air and the remainder only with air. As a result the formation of mist at the discharge end of the cooler can be avoided.

Abstract: The single crystal growth of GaAs is highly anisotropic under certain conditions. A wafer of GaAs is masked and exposed to the vapor only through a long, narrow slot in the <110> direction. A thin ribbon of single crystal GaAs grows out of the slot at a high rate along the <112> vector and has {111} plane major faces and {110} plane edges. This ribbon is flexible. A H.sub.2 -AsCl.sub.3 -Ga epitaxy system is modified to permit retraction of the ribbon as it grows and thus the production of long ribbons.

Abstract: In the illustrative embodiments of the invention described, a pressurized fluid device of the cylinder and piston rod type includes, at one end thereof, an elastomeric closure member which is movable, under the force of the fluid to be introduced into the device, away from a sealing position with respect to the cylinder, and piston rod to a position in which the fluid is admitted into the cylinder for purposes of charging the same. Upon completion of the charging, or fluid-filling, step the closure member is returned to the sealing position either by movement of the piston rod alone or in conjunction with the action of the fluid pressure within the cylinder.

Abstract: An improved method of producing potassium sulfate from langbeinite. The improved method employs a "salting out" step to remove additional KCl from the mother liquor resulting from K.sub.2 SO.sub.4 crystallization. NaCl is added to the mother liquor to cause precipitation of KCl crystals. The amount of NaCl added is controlled to an amount below the saturation point for NaCl in the solution to avoid contaminating the KCl with solid NaCl. The KCl crystals are recycled back to the K.sub.2 SO.sub.4 reactors as a source of KCl. The "salting out" step eliminates an energy-intensive submerged combustion evaporation step from the K.sub.2 SO.sub.4 recovery process and consequently reduces atmospheric emissions.

Abstract: An improved furnace is provided for growing crystalline bodies from a melt. The improved furnace is characterized by a door assembly which is remotely controlled and is arranged so as to selectively shut off or permit communication between an access port in the furnace enclosure and a hot zone within that enclosure. The invention is especially adapted to facilitate use of crystal growing cartridges of the type disclosed in U.S. Pat. No. 4,118,197.

Abstract: A method and apparatus for growing crystal ribbon from a liquid melt by the EFG technique includes the use of a die having a capillary feed passage adjacent the ribbon pulling mechanism and gas scrubbing passages on each side of the capillary feed passage. Thus, gas entrapped in the liquid melt can diffuse through the gas scrubbing passages to minimize the presence of microvoids in the ribbon. In a particular embodiment, the capillary die can include lateral communicating passages between the capillary feed passage and the gas scrubbing passage so that gas in the capillary feed passage can diffuse out to the gas scrubbing passage.

Abstract: A method of manufacturing table salt effectively containing an efficient amount of the minerals from the sea water by using not fuel or electric energy but natural energy only. The method comprising the steps of infiltrating and flowing down the sea water from a hollow tower made of liquid permeable materials and producing primary salt water adding raw salt thereto to cause low solubility components to be separated and precipitated leaving residual salt water, and evaporating the moisture from said residual salt water at ambient temperature and humidity to produce table salt.

Abstract: This invention relates to dumped packings for use in gas/liquid contact apparatus and analogous apparatus. The dumped packings consist of a plurality of packing elements of specific configuration to provide packings with good characteristics in use. Each element consists of a generally elongate curved or polygonal base member which is substantially flat transversely but extends 90.degree. to 270.degree. about the notional axis of the curve or polygon to form an open shape extending generally in a plane perpendicular to that notional axis. The base member includes one or more elongate apertures bridged by elongate bridges integral with the base member and of opposite sense curvature. This construction gives packing elements which combine high strength with good mass transfer performance.

Abstract: Disclosed is a magnetic garnet film which has a composition (BiGdLu).sub.3 (FeAl).sub.5 O.sub.12 or (BiGdSm).sub.3 (FeAl).sub.5 O.sub.12.

Abstract: A plurality of elongated hollow, circular, foraminous substantially vertical tubes contiguously stacked transversely to the direction flowing liquid such as waste water containing foreign matter, i.e., settable solids and free oil, in a coalescer-separator apparatus provide a filter body providing for significant surface area contact by the liquid on both inside and outside surfaces of the tubes to entrap the foreign matter but defining substantially vertical passages permitting the entrapped foreign matter to be gravity separated with the lighter matter coalescing and floating upwardly and the heavier matter settling downwardly so that substantially clarified effluent flows from the apparatus. The stacked tube filter body is contained within an insulated closed container of a sufficient capacity, and the arrays of holes in the tube walls are coordinated with respect to the intended volumetric capacity of the apparatus, so that turbulence in the liquid flowing through the filter body is minimized.

Abstract: The invention is for a fixed bed reactor with two phase gas and liquid flow. The reactor has at least one auxiliary bed of solid particles disposed above the main bed of solid particles. The auxiliary bed has separate liquid and gas bypasses comprised of hollow tubing extending through the auxiliary bed. Liquid receptacles provide a liquid seal above the liquid bypasses, thereby preventing gas from bypassing along with the liquid. The liquid spilled from the flow receptacles seeks its lowest level and flows through the auxiliary bed, thereby leaving only the gas to flow through the gas bypasses. This separate feed arrangement allows for a low pressure drop bypassing of the auxiliary bed, when the auxiliary bed becomes fouled and clogged. The invention is also applicable to other apparatuses which use a flow arrangement similar to fixed bed reactors, but which do not necessarily utilize a chemical reaction. One example of such apparatus is a packed absorption tower having co-current downflow of gas and liquid.

Abstract: In the crucible-pulling of crystalline rods by the Czochralski technique, pulling plants that operate with a radiation screen offer a number of advantages. This process is optimized according to the invention by the use of a radiation screen which is joined to a lifting and pivoting mechanism that can be operated throughout the entire pulling process, and which is brought into position above the melt only when the contents of the crucible have been melted.

Abstract: The invention is a method and apparatus for growing group III-V semiconductor layers by molecular beam deposition in which a gaseous source is used to form a molecular beam comprising M.sub.2 or M.sub.4 molecules, where M is a group V element. Arsine and phosphine may be decomposed in a high temperature leak-source to provide As.sub.2 and P.sub.2 molecular beams for molecular beam epitaxy of group III-V semiconductors such as GaAs and InP.

Abstract: A method for laser induced conversion of large predefined areas of amorphous or polycrystalline semiconductor material, disposed nonepitaxially upon a substrate, into large single crystal areas, by controlling the lateral heat flow out of the melted regions of the areas for causing their recrystallization from a single nucleation site and for suppressing the formation of competitive nucleation sites at their edges.

Abstract: In the crucible pulling of silicon according to the Czochralski technique, ilicon monoxide forms as a result of the silicon melt reacting with the quartz crucible containing the melt, and evaporates and deposits in the form of solid particles on the upper edge of the crucible, on the monocrystalline rod, on the walls of the vessel, and also on recharging devices in the upper pulling chamber. These solid particles can fall back into the melt and then cause dislocations and polycrystalline growth in the growing silicon rod. As a result of the reaction of the carbon of the hot graphite parts with silicon monoxide, carbon monoxide is also formed and this partially diffuses into the melt and gives rise to carbon impurities in the silicon rod. In addition, because of heat irradiation from the inner wall of the quartz crucible as it becomes more empty, high pulling speeds, such as those usual in crucible-free zone pulling, cannot be obtained.

Abstract: A process for the purification of molten materials during crystal growth by electromigration of impurities to localized dirty zones. The process has particular applications for silicon crystal growth according to Czochralski techniques and edge-defined film-fed growth (EFG) conditions. In the Czochralski crystal growing process, the impurities are electromigrated away from the crystallization interface by applying a direct electrical current to the molten silicon for electromigrating the charged impurities away from the crystal growth interface.In the EFG crystal growth process, a direct electrical current is applied between the two faces which are used in forming the molten silicon into a ribbon. The impurities are thereby migrated to one side only of the crystal ribbon. The impurities may be removed or left in place. If left in place, they will not adversely affect the ribbon when used in solar collectors.

Abstract: A multi-stage gas/liquid reactor is disclosed which has several concentric internal baffles, which define reaction stage zones. A central liquid inlet and an array of gas inlets supply the reactants which flow sequentially through diametrically opposed baffle passages to the various reaction stage zones. A method of using such a reactor to provide radially outward, positive pressure against the baffles is also disclosed.

Abstract: A method and apparatus for the leak testing of one or more filters, which requires minimum space, and which comprises a housing adapted to sealably mount the filters, means for introducing DOP particles within the housing and immediately upstream of each of the filters, and a funnel-shaped member mounted in the housing upstream of each filter and downstream of the point at which the DOP is introduced. The member may be selectively positioned to assume an operative position transverse to the airstream wherein it acts to condense and mix the airstream and DOP and then disperse the mixture over the full frontal area of the adjacent filter, or a non-operative position wherein the member is substantially withdrawn from the airstream. Means are also mounted downstream of each filter for monitoring the airstream to detect DOP particles, and thereby permit a determination as to whether any of the particles are leaking through or around the filter.

Abstract: Three-dimensional exchange element for heat exchange units for gas/liquid systems which consists of filaments with a diameter of 0.1 to 2.5 mm, such filaments, which are welded together at their interlacing points, being arranged in a level plane showing equidistantly spaced hump-like projections.

Abstract: A susceptor made of a conductive material which has a melting point higher than that of a starting material and which does not react with the melt of the starting material is heated to a temperature not lower than the melting point of the starting material by the radio frequency induction heating. The starting material is fed onto the upper surface of the heated susceptor at a predetermined rate so as to melt the starting material, the resultant melt of the starting material is caused to flow from the upper surface of the susceptor via the susceptor to the lower surface thereof, the melt is crystallized in touch with a seed crystal arranged on the lower surface in advance, and the seed crystal is transferred downwards, whereby a single crystal is grown.