Patents Examined by Guinever S Gregorio
  • Patent number: 10826109
    Abstract: Novel non-planar non-contiguous graphene structures and novel methods for forming the same. According to some embodiments the novel methods result in three-dimensional graphene structures. According to a further embodiment these three-dimensional graphene structures have a specific, controlled morphology. According to a still further method the novel method results in decoratable graphene sheets or three-dimensional graphene structures.
    Type: Grant
    Filed: July 1, 2014
    Date of Patent: November 3, 2020
    Assignee: UNM Rainforest Innovations
    Inventors: Alexey Serov, Plamen B Atanassov, Nalin Andersen
  • Patent number: 10808293
    Abstract: To improve the formability of dual phase steels, the martensite phase is tempered. It may form a ferrite-carbide structure. The tempering step occurs after martensite has been formed in the dual phase steel. The tempering step can occur in a box annealing step or it can be performed in a continuous fashion, such as on a continuous annealing, continuous tempering heat treating, or continuous coating line. The tempering step can further comprise a temper rolling on a temper mill after the heating step.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: October 20, 2020
    Assignee: AK Steel Properties, Inc.
    Inventors: Robert J. Comstock, George A. Paraskos
  • Patent number: 10773962
    Abstract: Disclosed herein is a method for preparing coal-based, briquetted activated carbon. The method includes subjecting raw coal to a briquetting process, pulverizing the briquettes into particles, and performing carbonization and activation to obtain activated carbon. The briquetting process includes pulverizing raw coal to produce a feed, feeding the feed into a feed bin for degassing, adjusting the temperature and the water content of the feed in the feed bin, and feeding the feed in the feed bin into a briquetting apparatus for briquetting to form coal briquettes. The raw coal briquetting process of the preparation method is suited to a wide variety of coal, including non-caking coal. The preparation method yields a coal briquette product with a strength greater than 89% without any binder, which is beneficial to improve the strength and the like of activated carbon.
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: September 15, 2020
    Assignees: CHINA ENERGY INVESTMENT CORPORATION LIMITED, SHENHUA XINJIANG ENERGY CO, LTD.
    Inventors: Jianqiang Chen, Xintian Xu, Long Zhao, Hongqiang Wang, Xiaolin Han, Xiaodong Lu, Tao Qi, Wei Zhuang, Jin Li, Liangliang Wu, Jianrui Li, Cheng Wang
  • Patent number: 10766780
    Abstract: As disclosed herein, the viscoelastic performance of boron nitride nanotube (BNNT) materials may be enhanced and made into useful formats by utilizing purified BNNTs, aligned BNNTs, isotopically enhanced BNNTs, and density controlled BNNT material. Minimizing the amounts of boron particles, a-BN particles, and h-BN nanocages, and optimizing the h-BN nanosheets has the effect of maximizing the amount of BNNT surface area present that may interact with BNNTs themselves and thereby create the nanotube-to-nanotube friction that generates the viscoelastic behavior over temperatures from near absolute zero to near 1900 K. Aligning the BNNT molecular strands with each other within the BNNT material also generates enhanced friction surfaces. The transport of phonons along the BNNT molecules may be further enhanced by utilizing isotopically enhanced BNNTs.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: September 8, 2020
    Assignee: BNNT, LLC
    Inventors: R. Roy Whitney, Thomas G. Dushatinski, Thomas W. Henneberg, Kevin C. Jordan, Diego Pedrazzoli, Jonathan C. Stevens, Michael W. Smith
  • Patent number: 10759664
    Abstract: A method of preparing silicon carbide according to the present invention includes reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is optionally used.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: September 1, 2020
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Won Chul Cho, Myung Won Seo, Hae In Lee, Jae Goo Lee, Ki Kwang Bae, Chang Hee Kim, Jong Won Kim, Chu Sik Park, Kyoung-Soo Kang, Seong Uk Jeong, Hyun Seok Cho
  • Patent number: 10752503
    Abstract: The present invention provides a spherical boron nitride fine powder and the other superior in filling property into resin. The present invention relates to a spherical boron nitride fine powder having the following characteristics (A) to (C): (A) the spherical boron nitride fine particles have any one or more of Si, Ti, Zr, Ce, Al, Mg, Ge, Ga, and V in an amount of 0.1 atm % or more and 3.0 atm % or less in its composition on the surface of 10 nm; (B) the spherical boron nitride fine powder has an average particle diameter of 0.05 ?m or more and 1 ?m or less; and (C) the spherical boron nitride fine powder has an average circularity of 0.8 or more.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: August 25, 2020
    Assignee: DENKA COMPANY LIMITED
    Inventors: Go Takeda, Yoshitaka Taniguchi, Takemi Oguma
  • Patent number: 10737943
    Abstract: Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: August 11, 2020
    Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Hardmetal Corp.
    Inventors: Takuya Nohara, Natsuo Tatsumi, Yoshiki Nishibayashi, Hitoshi Sumiya, Yutaka Kobayashi, Akihiko Ueda
  • Patent number: 10722867
    Abstract: Shaped porous carbon products and processes for preparing these products are provided. The shaped porous carbon products can be used, for example, as catalyst supports and adsorbents. Catalyst compositions including these shaped porous carbon products, processes of preparing the catalyst compositions, and various processes of using the shaped porous carbon products and catalyst compositions are also provided.
    Type: Grant
    Filed: April 18, 2016
    Date of Patent: July 28, 2020
    Assignee: Archer-Daniels-Midland Company
    Inventors: Gary M. Diamond, Guang Zhu, Vincent J. Murphy, Eric Dias
  • Patent number: 10722869
    Abstract: The present invention provides a porous metal-containing carbon-based material that is stable at high temperatures under aqueous conditions. The porous metal-containing carbon-based materials are particularly useful in catalytic applications. Also provided, are methods for making and using porous shaped metal-carbon products prepared from these materials.
    Type: Grant
    Filed: October 24, 2019
    Date of Patent: July 28, 2020
    Assignee: Archer-Daniels-Midland Company
    Inventors: Valery Sokolovskii, Alfred Hagemeyer, James A. W. Shoemaker, Elif Ispir Gürbüz, Guang Zhu, Eric L. Dias
  • Patent number: 10723944
    Abstract: A fluorescent diamond particle, characterized by having a surface and a diamond lattice; the particle comprising a core and a region within approximately 3 nm of the surface of the particle enriched with fluorescent color centers, where the near surface enrichment with color centers is enriched by a treatment providing in-diffusion of external dopants, as compared to particles which have not undergone the treatment. The dopant is selected from the group consisting of a nitrogen atom, a group of nitrogen atoms, silicon, and a combination thereof.
    Type: Grant
    Filed: June 10, 2019
    Date of Patent: July 28, 2020
    Inventor: Olga Aleksandrovna Shenderova
  • Patent number: 10724152
    Abstract: This method for producing a SiC single crystal includes a first growth step of growing a crystal from a seed crystal in a direction that is substantially orthogonal to the <0001> direction, a second growth step of growing the crystal in a direction that is substantially orthogonal to the <0001> direction and substantially orthogonal to the direction of crystal growth in the first growth step, a third growth step of growing the crystal along the direction of crystal growth in the first growth step but in the opposite orientation to the orientation of crystal growth in the first growth step, and a fourth growth step of growing the crystal along the direction of crystal growth in the second growth step but in the opposite orientation to the orientation of crystal growth in the second growth step.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: July 28, 2020
    Assignee: SHOWA DENKO K.K.
    Inventors: Tomohiro Shonai, Masakazu Kobayashi, Masanori Yamada
  • Patent number: 10711369
    Abstract: The present invention provides a method for producing an SiC single crystal, enabling obtaining an SiC single crystal substrate in which a screw dislocation-reduced region is ensured in a wide range, and an SiC single crystal substrate. The SiC single crystal substrate is produced using a seed crystal having an off angle in the off orientation from a {0001} plane by a production method wherein in advance of a growth main step of performing crystal growth to form a facet {0001} plane in the crystal peripheral part on the crystal end face having grown thereon the bulk silicon carbide single crystal and obtain more than 50% of the thickness of the obtained SiC single crystal, a growth sub-step of growing the crystal at a higher nitrogen concentration than in the growth main step and at a growth atmosphere pressure of 3.9 to 39.9 kPa and a seed crystal temperature of 2,100° C. to less than 2,300° C. is included.
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: July 14, 2020
    Assignee: SHOWA DENKO K.K.
    Inventors: Shinya Sato, Tatsuo Fujimoto, Masakazu Katsuno, Hiroshi Tsuge, Masashi Nakabayashi
  • Patent number: 10704162
    Abstract: Provided is an aluminum nitride single crystal which is easier to cut than conventional ones. The presently disclosed aluminum nitride single crystal 1 has a matrix region M constituting a matrix of the aluminum nitride single crystal, and at least one domain region D included in the matrix region M.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: July 7, 2020
    Assignee: JFE MINERAL COMPANY, LTD
    Inventors: Yosuke Iwasaki, Keiichiro Nakamura
  • Patent number: 10696555
    Abstract: The disclosure provides for methods of oxidizing carbide anions, or negative ions, from salt like carbides at low temperatures below about 600° C. In another aspect, the disclosure provides for reactions with intermediate transition metal carbides. In yet another aspect, the disclosure provides for a system of reactions where salt-like carbide anions and intermediate carbide anions are oxidized to produce pure carbon of various allotropes.
    Type: Grant
    Filed: September 24, 2018
    Date of Patent: June 30, 2020
    Assignee: WEST VIRGINIA UNIVERSITY RESEARCH CORPORATION
    Inventor: Alfred H. Stiller
  • Patent number: 10697088
    Abstract: A single-crystal diamond material has a transmittance of light with a wavelength of greater than or equal to 410 nm and less than or equal to 750 nm of less than or equal to 15% for any wavelength, and is at least either of an electrical insulator according to optical evaluation and an electrical insulator according to electrical evaluation. A criterion of the optical evaluation can be a transmittance of light with a wavelength of 10.6 ?m of greater than or equal to 1%. A criterion of the electrical evaluation can be an average resistivity of greater than or equal to 1×106 ?cm. Accordingly, a single-crystal diamond material having a low transmittance of light in the entire region of the visible light region and exhibiting a black color is provided.
    Type: Grant
    Filed: October 29, 2015
    Date of Patent: June 30, 2020
    Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Hardmetal Corp.
    Inventors: Yoshiki Nishibayashi, Akihiko Ueda, Yutaka Kobayashi
  • Patent number: 10688425
    Abstract: The present application relates to a multifunctional filter medium and a method of manufacturing the same. The multifunctional filter medium of the present application is capable of significantly reducing fine dust, harmful microorganisms, and toxic gases and reducing a pressure decrease during filtration due to exclusion of high-density nanofiber, thereby minimizing energy required for filtration and exhibiting sufficient filtration performance as a single filter medium.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: June 23, 2020
    Assignee: Research Cooperation Foundation of Yeungnam University
    Inventor: Jeong Hoon Byeon
  • Patent number: 10693144
    Abstract: A method for producing a catalyst ink, by which the surface of a catalyst can be appropriately covered with an ionomer, and the power generation performance of a fuel cell can be excellent in a wide range of humidity environments, and a catalyst composite. The method for producing a catalyst ink may comprise the steps of, for a catalyst composite in which a catalyst is supported on a carbon support with pores, controlling a hydrophilic pores rate of the carbon support to 60% to 80%, and dispersing an ionomer in the catalyst composite after the controlling step, wherein the hydrophilic pores rate is calculated by the following formula (1) using a contact porosimetry method: Hydrophilic pores rate (%)=(hydrophilic pores volume/total pores volume)×100.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: June 23, 2020
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Tatsuya Arai, Takashi Ozaki
  • Patent number: 10676359
    Abstract: A method of making carbon nanotubes with equal or other ratio of semiconductive to conductive elements in integrated form includes: depositing a catalyst layer on a substrate and heating same in a reaction furnace to a predetermined temperature. A carbon source gas and a protective gas are introduced to grow a plurality of carbon nanotube segments, some carbon nanotube segments being conductive metallic. A positive electric field is applied to the plurality of carbon nanotube segments, wherein the catalyst layer is positively charged and the positive electric field is reversed to the negative, to grow a second carbon nanotube segment structure from the metallic carbon nanotube segments. The direction of the negative electric field is along a second direction and the second carbon nanotube segment structure then comprises a plurality of semiconducting carbon nanotube segments.
    Type: Grant
    Filed: May 14, 2018
    Date of Patent: June 9, 2020
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Jiang-Tao Wang, Peng Liu, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 10662062
    Abstract: Si3N4 nanotubes and nanorods wherein the nanotubes and nanorods of silicon nitride are pure ?-Si3N4 formed by carbothermal reduction of SiO2 from reacting agricultural husk material in heat and forming the silicon nitride nanotubes and nanorods.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: May 26, 2020
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Syed B. Qadri, Bhakta B. Rath, Edward P. Gorzkowski, III
  • Patent number: 10662064
    Abstract: A method for preparing high specific surface area activated carbon through rapid activation, comprises the following steps: 1) selecting biomass raw material with a particle size of 0.3-0.9 mm; immersing the biomass raw material in a chemical reagent for 3-6 hours; and drying the biomass raw material in a constant-temperature drying oven of 100° C.-150° C. after immersing is ended; 2) stirring or crushing the dried material to form granular material after drying is completed; and 3) adopting a fluidized bed or a spouted bed as an activation reactor; increasing the temperature of the activation reactor to 700-800° C.; introducing fluidized gas; placing quartz sand; placing the granular material obtained in step 2); activating for 1-10 min; immediately discharging the material after activation is ended; and washing the material with water until the material is neutral to obtain activated carbon with a specific surface area of 1267-1359 m2/g.
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: May 26, 2020
    Inventors: Zhanyong Li, Xinyuan Gao, Qing Xu, Wei Tian, Ruifang Wang, Jianguo Zhang