Abstract: The present invention relates to a process for the preparation of particles comprising at least one compound according to general formula (I) M1aM2bM3cOoNnFf (I) wherein M1, M2, M3 O, N, F, a, b, c, o, n and f have the following meanings: M1 at least one alkaline metal, M2 at least one transition metal in oxidation state +2, M3 at least one non-metal chosen form S, Se, P, As, Si, Ge and/or B, O oxygen, N nitrogen, F fluorine, a 0.8-4.2, b 0.8-1.9, c 0.8-2.2, o 1.0-8.4, n 0-2.0 and f 0-2.

Abstract: A composition of voltage switchable dielectric (VSD) material that comprises a concentration of core shelled particles that individually comprise a conductor core and a shell, the shell of each core shelled particle being (i) multilayered, and/or (ii) heterogeneous.

Abstract: A composition of voltage switchable dielectric (VSD) material that comprises a concentration of core shelled particles that individually comprise a conductor core and a conductor shell, so as to form a conductor-on-conductor core shell particle constituent for the VSD material.

Abstract: A resin material is provided which comprises at least one thermoset resin, carbon conductive additive material, and at least one thermoplastic polymer resin. The thermoplastic polymer resin dissolves in the thermoset polymer resin and phase separates upon cure. There is also provided a method of making the resin material, and additionally a composite material that comprising said resin material in combination with a fibrous reinforcement. The resin material and composite material may each be used in an uncured or cured form, and may find particular use as a prepreg material.

Abstract: A method of producing a semiconductor crystal is provided. The method includes the steps of preparing a longitudinal container with a seed crystal and an impurity-containing melt placed in a bottom section and with a suspension part arranged in an upper section and suspending a dropping raw material block made of a semiconductor material having an impurity concentration lower than the impurity concentration of the impurity-containing melt, and creating a temperature gradient in the longitudinal direction of the longitudinal container to melt the dropping raw material block, and solidifying the impurity-containing melt from the side that is in contact with the seed crystal (8) while dropping a produced melt into the impurity-containing melt, thereby producing a semiconductor crystal.

Abstract: An electrode includes a binder and an electroactive material, wherein the binder includes a polymer including a linear polysiloxane or a cyclic polysiloxane.

Abstract: This invention relates generally to electrode materials, electrochemical cells employing such materials, and methods of synthesizing such materials. The electrode materials have a crystal structure with a high ratio of Li to metal M, which is found to improve capacity by enabling the transfer of a greater amount of lithium per metal, and which is also found to improve stability by retaining a sufficient amount of lithium after charging. Furthermore, synthesis techniques are presented which result in improved charge and discharge capacities and reduced particle sizes of the electrode materials.

Abstract: A method for producing n-type SiC single crystal, including: adding gallium and nitrogen, which is a donor element, for obtaining an n-type semiconductor during crystal growth of SiC single crystal, such that the amount of nitrogen as represented in atm unit is greater than the amount of gallium as represented in atm unit; an n-type SiC single crystal obtained according to this production method; and, a semiconductor device that includes the n-type SiC single crystal.

Abstract: The present application relates to a process for the preparation of compounds of general formula (I) Lia-bM1bFe1-cM2cPd-eM3eOx??(I), wherein M1, M2, M3, a, b, c, d, e and x: M1: Na, K, Rb and/or Cs, M2: Mn, Mg, Ca, Ti, Co, Ni, Cr, V, M3: Si, S, a: 0.8-1.9, b: 0-0.3, c: 0-0.9, d: 0.8-1.9, e: 0-0.5, x: 1.

Abstract: The invention relates to solvent compositions predominantly comprising at least one oxide of an organic sulfide, more particularly dimethyl sulfoxide, to which is added at least one odour-masking agent comprising at least one compound selected from monoesters, diesters or triesters, alcohols, ketones, aldehydes and terpenes.

Abstract: A negative-electrode active material characterized by containing a silicon oxide represented by a general formula SiOx (0<x<2) and a silicate compound represented by a composition formula MaSibOc-m(OH)-n(H20), and a method for the production of a negative-electrode active material which includes a mixing step of mixing a silicon oxide that is represented by a general formula SiOy (0<y<2) and a metal oxide, and a heat treatment step of performing a heat treatment on the mixture that is obtained in the mixing step in a non-oxidizing atmosphere and in which the negative absolute value of the standard Gibbs energy of the oxidation reaction of the metal oxide at the heating temperature in the heat treatment step is smaller than the negative absolute value of the standard Gibbs energy of the oxidation reaction of Si at the heating temperature in the heat treatment step.

Abstract: Provided are alkyl lactyllactate compositions that can be prepared from (1) lactide or alternatively lactic acid, and (2) a hydroxyl containing compound such as an alcohol, preferably a fatty alcohol or an alkoxylated alcohol, with (3) an acid catalyst. Preferably, the fatty alcohol contains from about 6 to 18 carbon atoms, such as lauryl alcohol. The alkyl lactyllactates can be used as surfactants, emulsifiers, skin feel agents, film formers, thickeners, rheological modifiers, etc., for personal care and other application areas. Compositions containing at least one alkyl lactyllactate are also provided. The compositions can further contain at least one surfactant.

Abstract: This invention provides non-spherical nanoparticle compositions that are the reaction product of a source of a Group 12, 13, 14, or 15 metal or metalloid; a source of a Group 15 or 16 element; and a source of a quaternary ammonium compound or phosphonium compound; wherein nanoparticle tetrapods comprise 75-100 number percent of the nanoparticle products.

Abstract: Compositions comprising are provided wherein RF is a fluorine containing moiety comprising (CF3)2CFCH2(CF3)CH—, (CF3)2CFCH2((CF3)2CF)CH—, (CF3)2CFCH2((CF3)2CH)CH—, (CF3)2CHCH2((CF3)2CF)CH—, ((CF3)2CFCH2)2CH—, (CF3)2CFCH2CF—, (CF3)2CF—, (CF3)2CH—, CF3—, or CnF2n+1—, n being an integer from 2 to 20; R1 is F or H; R2 comprises (CF3)2CF—, (CF3)2CH—, CF3—, F, or H; and R3 comprises (CF3)2CF—, (CF3)2CH—, CF3—, F, or H, such compositions can produced according to processes, and utilized to prevent combustion utilizing systems.

Abstract: A water conditioning composition includes water; at least one gluconate compound; at least one carbonate compound; a non-ionic preservative; and a phosphate buffer. For example, the composition can include 87-95 wt. % water; 0.5 to 1.5 wt. % gluconate compound; 3 to 8 wt. % carbonate compound; 0.5 to 1.5 wt. % non-ionic preservative; and 0.5 to 2.5 wt. % phosphate buffer.

Abstract: An exemplary embodiment of a synthesis method includes the following acts or steps: providing LiMn2O4 material as a precursor; leaching Mn from the LiMn2O4 material using an acid to form a synthesized solution; adding carbonaceous material to the synthesized solution; adding phosphoric acid to the synthesized solution with carbonaceous material to form MnPO4 composite material; and adding Li containing compound to the MnPO4 composite material to form LiMnPO4 composite material.

Abstract: The present application relates to a process for the preparation of compounds of general formula (I) Lia-bM1bFe1-cM2cPd-eM3eOx??(I), wherein M1, M2, M3, a, b, c, d, e and x: M1: Na, K, Rb and/or Cs, M2: Mn, Mg, Ca, Ti, Co, Ni, Cr, V, M3: Si, S, a: 0.8-1.9, b: 0-0.3, c: 0-0.9, d: 0.8-1.9, e: 0-0.5, x: 1.

Abstract: The solder composition comprises particles of a thermodynamically metastable alloy. One of the elements of the alloy will form an intermetallic compound with a metal surface. The solder composition is particularly suitable for use in bumping of semiconductor devices.

Abstract: Provided is an electrode active material comprising a nickel-based lithium transition metal oxide (LiMO2) wherein the nickel-based lithium transition metal oxide contains nickel (Ni) and at least one transition metal selected from the group consisting of manganese (Mn) and cobalt (Co), wherein the content of nickel is 50% or higher, based on the total weight of transition metals, and has a layered crystal structure and an average primary diameter of 3 ?m or higher, wherein the amount of Ni2+ taking the lithium site in the layered crystal structure is 5.0 atom % or less.

Abstract: A process for preparing modified mixed transition metal oxides, which comprises treating a precursor of a mixed oxide which comprises lithium and at least two transition metals as cations with at least one substance which is selected from compounds of phosphorus, silicon, titanium, boron or aluminum having at least one phenoxy or alkoxy group or at least one halogen.