Abstract: Provided is an electrode active material comprising a nickel-based lithium transition metal oxide (LiMO2) wherein the nickel-based lithium transition metal oxide contains nickel (Ni) and at least one transition metal selected from the group consisting of manganese (Mn) and cobalt (Co), wherein the content of nickel is 50% or higher, based on the total weight of transition metals, and has a layered crystal structure and an average primary diameter of 3 ?m or higher, wherein the amount of Ni2+ taking the lithium site in the layered crystal structure is 5.0 atom % or less.

Abstract: Electrically conductive polymeric compositions adapted for use in forming electronic devices are disclosed. The compositions are thermally curable at temperatures less than about 250° C. Compositions are provided which may be solvent-free and so can be used in processing or manufacturing operations without solvent recovery concerns. The compositions utilize (i) fatty acid modified epoxy acrylate and/or methacrylate monomer(s) and/or oligomer(s), (ii) fatty acid modified polyester acrylate and/or methacrylate monomer(s) and/or oligomer(s), or combinations of (i) and (ii). Also described are electronic assemblies such as solar cells using the various compositions and related methods.

Abstract: A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.

Abstract: A method for producing aqueous compatible semiconductor nanoparticles includes binding pre-modified ligands to nanoparticles without the need for further post-binding modification to render the nanoparticles aqueous compatible. Nanoparticles modified in this way may exhibit enhanced fluorescence and stability compared to aqueous compatible nanoparticles produced by methods requiring post-binding modification processes.

Abstract: An aromatic organic solvent solution of a methanesulfonic acid alkyl ester having high thermal stability is obtained by reacting an alkyl alcohol with methanesulfonyl chloride in an aromatic organic solvent in the presence of a tertiary amine, and washing the resulting aromatic organic solvent solution of a crude methanesulfonic acid alkyl ester with an aqueous alkali metal carbonate solution. The washing is performed using the aqueous alkali metal carbonate solution having a concentration of 1 to 3 mass % in an amount of 4 to 6 parts by mass per 1 part by mass of the alkyl alcohol.

Abstract: An anode includes an anode active material including a lithium titanium oxide, a binder, and 0 to about 2 parts by weight of a carbon-based conductive agent based on 100 parts by weight of the lithium titanium oxide.

Abstract: An organic nanofiber including a gelled organic semiconductor compound. Also disclosed is an organic semiconductor transistor and a method of manufacturing an organic semiconductor transistor.

Abstract: The present invention relates to a process for the preparation of compounds of general formula (I) Lia-bMb1Fe1-cMc2Pd-eMe3Ox, wherein Fe has the oxidation state +2 and M1, M2, M3, a, b, c, d, e and x are: M1: Na, K, Rb and/or Cs, M2: Mn, Mg, Al, Ca, Ti, Co, Ni, Cr, V, M3: Si, S, F a: 0.8-1.9, b: 0-0.3, c: 0-0.9, d: 0.8-1.9, e: 0-0.5, x: 1.0-8, depending on the amount and oxidation state of Li, M1, M2, P, M3, wherein compounds of general formula (I) are neutrally charged, comprising the following steps (A) providing a mixture comprising at least one lithium-comprising compound, at least one iron-comprising compound, in which iron has the oxidation state 0, and at least one M1-comprising compound, if present, and/or at least one M2-comprising compound, if present, and/or least one M3-comprising compound, if present, and at least one compound comprising at least one phosphorous atom in oxidation state +5, and (B) heating the mixture obtained in step (A) at a temperature of 100 to 500° C.

Abstract: A technique capable of forming an oxide semiconductor target with a high quality in a low cost is provided. In a step of manufacturing zinc tin oxide (ZTO target) used in manufacturing an oxide semiconductor forming a channel layer of a thin-film transistor, by purposely adding the group IV element (C, Si, or Ge) or the group V element (N, P, or As) to a raw material, excessive carriers caused by the group III element (Al) mixed in the step of manufacturing the ZTO target are suppressed, and a thin-film transistor having good current (Id)-voltage (Vg) characteristics is achieved.

Abstract: The present invention describes a solventless ligand exchange using a siloxane polymer having a binding ligand that displaces the binding ligand on a quantum dot material.

Abstract: Nanoparticle paste formulations can be configured to maintain a fluid state, promote dispensation, and mitigate crack formation during nanoparticle fusion. Such nanoparticle paste formulations can contain an organic matrix and a plurality of metal nanoparticles dispersed in the organic matrix, where the plurality of metal nanoparticles constitute about 30% to about 90% of the nanoparticle paste formulation by weight. The nanoparticle paste formulations can maintain a fluid state and be dispensable through a micron-size aperture. The organic matrix can contain one or more organic solvents, such as the combination of one or more hydrocarbons, one or more alcohols, one or more amines, and one or more organic acids. Optionally, the nanoparticle paste formulations can contain about 0.01 to about 15 percent by weight micron-scale metal particles or other additives.

Abstract: Perovskite materials of the general formula SrCeO3 and BaCeO3 are provided having improved conductivity while maintaining an original ratio of chemical constituents, by altering the microstructure of the material. A process of making Pervoskite materials is also provided in which wet chemical techniques are used to fabricate nanocrystalline ceramic materials which have improved grain size and allow lower temperature densification than is obtainable with conventional solid-state reaction processing.

Abstract: A paste composition for a rear electrode of a solar cell according to an embodiment comprises conductive powder including a first powder having a first mean particle diameter, a second powder having a second mean particle diameter larger than the first mean particle diameter, and a third powder having a third mean particle diameter larger than the second mean particle diameter, and an organic vehicle.

Abstract: The present invention relates to a novel electroactive material which comprises a graphitic carbon phase C and a (semi)metal phase and/or a (semimetal) oxide phase (MOx phase) and also to the use of the electroactive material in anodes for lithium ion cells. The invention further relates to a process for producing such materials. The electroactive material comprises: a) a carbon phase C; b) at least one MOx phase, where M is a metal or semimetal, x is from 0 to <k/2, where k is the maximum valence of the metal or semimetal. In the electroactive material of the invention, the carbon phase C and the MOx phase form essentially co-continuous phase domains, with the average distance between two neighboring domains of identical phases being not more than 10 nm, in particular not more than 5 nm and especially not more than 2 nm.

Abstract: Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element or a Group 15 element. Further, the dopant ink composition includes a silicon-containing compound.

Abstract: Provided is a lithium transition metal oxide having an ?-NaFeO2 layered crystal structure, as a cathode active material for lithium secondary battery, wherein the transition metal includes a blend of Ni and Mn, an average oxidation number of the transition metals except lithium is +3 or higher, and the lithium transition metal oxide satisfies Equations 1 and 2: 1.0<m(Ni)/m(Mn)??(1) m(Ni2+)/m(Mn4+)<1??(2) wherein m(Ni)/m(Mn) represents a molar ratio of nickel to manganese and m (Ni2+)/m (Mn4+) represents a molar ratio of Ni2+ to Mn4+. The cathode active material of the present invention has a uniform and stable layered structure through control of oxidation number of transition metals to a level higher than +3, in contrast to conventional cathode active materials, thus advantageously exerting improved overall electrochemical properties including electric capacity, in particular, superior high-rate charge/discharge characteristics.

Abstract: Provided is a composition comprising a polymeric material, a filler material dispersed in the polymeric material, the filler material comprising inorganic particles and a discontinuous arrangement of conductive material wherein at least a portion of the conductive material is in durable electrical contact with the inorganic particles, and conductive material dispersed in the polymeric material.

Abstract: Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides semiconductor predominantly of a single type (p-type or n-type) for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of boron, phosphorus, aluminum and/or gallium. The process further melts the silicon feedstock with the boron, phosphorus, aluminum and/or gallium to form a molten silicon solution from which to perform directional solidification and maintains the homogeneity of the resistivity of the silicon throughout the ingot. A balanced amount of phosphorus can be optionally added to the aluminum and/or gallium. Resistivity may also be measured repeatedly during ingot formation, and additional dopant may be added in response, either repeatedly or continuously.

Abstract: An electrically conductive thermoplastic composition is prepared by melt blending a polymer and a masterbatch of carbon nanotubes in wax having a melting point of about 45 to about 150° C. The masterbatch of carbon nanotubes in wax is more easily prepared than a conventional carbon nanotube masterbatch in high molecular weight polymer. Use of the masterbatch of carbon nanotubes in wax also improves the melt flow properties of the electrically conductive thermoplastic composition.

Abstract: The present invention relates to an antistatic or electrically conductive, thermoset polyurethane obtained by reacting A) an organic polyisocyanate; B) a compound comprising NCO-reactive groups; and C) optionally a catalyst, a blowing agent, an auxiliary, an additive, or mixtures thereof; and wherein, the polyurethane comprises a carbon nanotube present in an amount of from 0.1 to 15% by weight based on the total weight of the polyurethane.